Bodo's News

Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

 

DC Power Analyzer
news_2025-10-15_20.png
Learn more:
itechate.com
  • Product Release
  • 2025-10-10

The IT2705 DC Power Analyzer is a highly integrated modular DC power analyzer designed for dynamic power consumption measurement, battery simulation, and power characterization. It combines DC power, electronic loads and arbitrary waveform generator with an intuitive GUI, supports Oscilloscope Sampling and Data Logging function, allowing for the creation of complex testing without the need for secondary development. Four current ranges with seamless auto-ranging enable accurate analysis of transient current changes from low-power sleep mode to active operation. Oscilloscope sampling rate up to 200 kHz ensures precise capture of microsecond-level parameter variations. It can be applied for testing IoT devices, chips, automotive electronics, smart wearable devices,etc, helping engineers deeply analyze dynamic waveforms, instant responses, and key electrical characteristics, improving testing efficiency and accuracy.

PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion
news_2025-10-15_8.jpg
Learn more:
pwrsocevents.com
  • Event News
  • 2025-10-10

The 9th International Workshop on Power Supply on Chip (PwrSoC) has just concluded. Held from September 24 to 26, 2025, in Seoul, South Korea, this year’s workshop marked another significant milestone in the field of integrated power solutions. Over 213 leading researchers and industry professionals from around the world gathered to share insights and advances in the miniaturization and integration of power conversion and power management at the chip, package, and module level. The workshop featured three outstanding plenary talks from industry leaders, offering deep insights into the latest developments in miniaturized and integrated power conversion and power management technologies. Following PwrSoC’s signature single-track format, the workshop presented high-impact invited presentations and an engaging poster session. The technical program covered a wide range of topics, including Systems & Applications, Integrated Magnetics, Topologies & Control, Wide Bandgap Integration, System-Integrated Packaging & Manufacturing, Integrated Capacitors and Energy Storage, and Granular Power Supply.

Christian Felgemacher appointed Director Application Engineering
news_2025-10-15_1.jpg
Learn more:
rohm.com
  • People
  • 2025-10-09

ROHM Semiconductor is pleased to announce the appointment of Dr. Christian Felgemacher as Director Application Engineering. Since October 1st, he has been responsible for both the operational coordination of technical customer support and the strategic direction of ROHM’s application engineering activities in Europe. Since joining ROHM in 2017, Dr. Felgemacher has contributed significantly to the establishment of the Application and Technical Solution Center (ATSC) - with the set-up of the company’s Power Lab and the development of customer-oriented solutions for ROHM’s European customers. In his previous role as Senior Department Manager Application Engineering, he already led the Technical Consulting and Customer Support division with great commitment and promoted conceptual cooperation with important partners from industry and university research. His leadership role was crucial to the expansion of ROHM’s activities in the automotive, industrial, and energy sectors - particularly through initiatives related to SiC technologies and inverter development.

300 mm GaN Program launched
news_2025-10-15_3.jpg
Learn more:
imec-int.com
  • Industry News
  • 2025-10-06

Imec welcomes AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco as first partners in its 300 mm gallium-nitride open innovation program track for low- and high-voltage power electronics applications. This program track, part of Imec’s industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300 mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows. The use of 300 mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs. As part of the 300 mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100 V and beyond), using 300 mm Si(111) as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted. For 650 V and above, developments will utilize 300 mm semi-spec and CMOS-compatible QST-® engineered substrates (a material with poly-crystalline AlN core). During the developments, control over the bow of the 300 mm wafers, and their mechanical strength are prime concerns. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025.

40 W DC/DC Converters for demanding space-constrained Applications
news_2025-10-15_19.jpg
Learn more:
xppower.com
  • Product Release
  • 2025-10-03

XP Power launched the BCT40T series of 40 W DC/DC converters, housed in a 1" × 1" (25.4 mm × 25.4 mm) package designed for PCB mounting. This series is suited for industrial technology, ITE, and communications applications where space is a critical constraint; it is specifically engineered for sectors such as test & measurement, robotics, process control, analytical instruments, and communications equipment. It features a 4:1 input voltage range and operates with an efficiency of up to 89 %. Models are available with nominal 24 VDC inputs (ranging from 9.0 V to 36.0 VDC) and 48 VDC inputs (ranging from 18.0 V to 75.0 VDC). The BCT40T offers single regulated outputs ranging from 3.3 V to 24 VDC, as well as dual regulated outputs at ±12 VDC and ±15 VDC. Furthermore, the single-output models offer the flexibility of ±10% output voltage adjustment via an external trim resistor, enabling specific voltage requirements. Protection features include 2kVDC isolation between input and output, continuous short-circuit protection with auto-recovery, and overload protection typically set between 130 % and 180 %. It also incorporates overtemperature protection (at 115 °C case temperature), under-voltage lockout (UVLO), and overvoltage protection via a Zener diode clamp. The series holds worldwide safety approvals, meeting IEC/UL/EN62368-1 standards, as well as applicable CE and UKCA directives. It also complies with EN55032 Class A/B for conducted and radiated emissions, and EN61000-4-x for immunity. With a 3-year warranty, the BCT40T series stands as a reliable and high-performance solution for power delivery.

Innovation Day showcases technical Innovations
news_2025-10-15_7.jpg
Learn more:
datatec.eu
  • Industry News
  • 2025-10-01

The dataTec Innovation Day, held on September 25 in Stuttgart by the specialist distributor, brought together 216 participants who experienced the latest innovations in test and measurement technology. The event’s name spoke for itself: the selected partner companies presented cutting-edge solutions that set new standards. The dataTec Innovation Day agenda featured live demonstrations, expert talks, and workshops on four key areas: EMPT (Electronic Measurement and Testing Technology), Power (AC/DC power supplies & data loggers), High-End Measurement Technology, and Modular Measurement Technology. Ample networking opportunities rounded off the event. Markus Kohler, Chief Sales Officer of dataTec, emphasized the responsibility of distribution partners in the field of measurement and testing technology. "We are observing three major developments: the increasing automation of measurement and testing tasks, the growing use of artificial intelligence in evaluation, and a clear trend toward more efficient and sustainable solutions. As a specialized distributor with 40 years of experience, our mission is to provide engineers and technicians with the right tools, and to offer practical support through consulting, application expertise, and dedicated service."

Industrial Power Supply Series now also with 600 W and 1000 W Models
news_2025-10-15_16.jpg
Learn more:
lambda.tdk.com
  • Product Release
  • 2025-09-30

TDK-Lambda has expanded its GUS series of single-output general-purpose power supplies with 600 W and 1000 W models. Designed for applications such as light industrial equipment, factory automation, semiconductor fabrication, ATE test systems, LED lighting, and broadcast, the new models provide output voltages of 12, 24, 36, and 48 V, achieving efficiencies of up to 95 % with a load of 30 to 100 %. Both units feature an internal cooling fan with an acoustic noise, which is typically less than 45 dBA. The GUS600 model measures 101.6 × 41 × 152.4 mm3 (W x H x D), while the GUS1000 has a compact package size of 101.6 × 41 × 177.8 mm3. The models feature an operating temperature range of -20 to +70 °C and the output voltage can be adjusted for non-standard system voltages while output remote on/off is available as an option. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS series also meets IEC 62477-1 (OVC III) and has an input-to-output isolation of 2,000 VAC, input-to-ground of 3,000 VAC, and an output-to-ground of 500 VAC. The nominal input voltage is 100 – 240 V.

Wide Input DC/DC Range delivers 10 W in DIP-24 Package
news_2025-10-15_15.jpg
Learn more:
recom-power.com
  • Product Release
  • 2025-09-30

The REC10K-RW series of encapsulated DC/DCs converters recently launched by Recom features a 4:1 input range (9-36 V and 18-75 VDC) and a selection of regulated single and dual outputs covering all common requirements. A full 10 W is available up to at least 60 °C ambient, deriving to 100 °C. Output trim and ON/OFF control features are included. Isolation is 4 kVDC for 1 minute (functional), and the parts are safety-certified to IEC/EN/UL/CSA62368-1. Full protection against input under-voltage, over-temperature, and output short-circuits, over-current, and over-voltage are included.

Application-specific MOSFETs provide enhanced dynamic Current Sharing
news_2025-10-15_13.jpg
Learn more:
nexperia.com
  • Product Release
  • 2025-09-30

Nexperia has added some devices to its family of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors. When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest VGS(th) will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications. PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs offer a 50 % lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a VGS(th) window that is up to 50 % lower (0.6 V min-to-max). Combined with the RDS(on) of 1.9 mΩ or 2.3 mΩ this helps to provide high efficiency in power switching applications. These ASFET devices are available in the rugged, space-efficient 8 mm × 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.

Passive Components: Plant Opening in China
  • Industry News
  • 2025-09-29

Isabellenhütte Heusler has opened its first plant in China – in Jintan (Changzhou). The company hosted a grand opening ceremony attended by key stakeholders, including customers, suppliers, service providers, local authorities, and political representatives. Dr. Gero Heusler, member of the advisory board, and the management team – represented by Thilo Gleisberg (CTO) and Dr. Felix Heusler (CFO) – also attended the event and emphasized the strategic importance of the new location for the company’s international orientation. With an investment of approximately 18 million Euros and more than 7,000 m² of production space on three levels, the family-owned company is consistently expanding its presence in the world’s most important industrial and electronics market. The facility targets LEED Silver certification and will operate entirely on renewable electricity. Isabellenhütte has been known for precision and quality since 1482 - today for its precision and power resistors, current measurement systems, and high-quality alloys. From the outset, the plant has focused on efficient, resource-saving processes and building local expertise. Once in regular operation, over 100 skilled jobs will be created; the first 25 employees have already started work. There are also plans to collaborate with universities and research institutions in the region.

Tailored for Industrial Switching Applications
news_2025-10-15_11.png
Learn more:
infineon.com
  • Product Release
  • 2025-09-26

Infineon Technologies launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Now there are products specifically for high performance switching, motor-drives, or RDS(ON)-focused applications. The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies in telecommunications and traditional server applications. There are two technology variants: devices optimized for hard-switching and soft-switching topologies. Compared to the OptiMOS 5 25 V, the new generation achieves up to 20 percent lower RDS(ON) and up to 25 percent better FOMs, depending on the optimization type. The OptiMOS 7 25 V devices, optimized for switching, are available in source-down PQFN 3.3×3.3 packages with bottom and dual-side cooling variants in a center-gate footprint while the OptiMOS 7 40 V motor-drives optimized family includes SuperSO8 (5x6) and PQFN 3.3×3.3 packages.

Collaboration on SiC Power Electronics Packages to enhance Flexibility
news_2025-10-01_8.jpg
Learn more:
infineon.com
  • Industry News
  • 2025-09-25

Infineon Technologies and ROHM have signed a Memorandum of Understanding to collaborate on packages for silicon carbide power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs. As part of the agreement, ROHM will adopt Infineon’s top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247. Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and GaN.

100 V N-channel power MOSFET
  • Product Release
  • 2025-09-25

Toshiba Electronics has launched the TPH2R70AR5, a 100 V-rated N-channel power MOSFET fabricated in the company’s U-MOS11-H process. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC/DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. The TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (RDS(ON)) has reduced by around 8 % to 2.7 mΩ (max.) while the total gate charge (Qg) is now 37 % lower at 52 nC (typ.). The RDS(ON) × Qg figure-of-merit (FoM) is therefore improved by 42 %. Housed in the SOP (N) package measuring 5.15 mm × 6.1 mm, the TPH2R70AR5 is rated for a maximum drain current (ID) of 190 A at an ambient temperature of 25 °C. The device is capable of operating with a channel temperature (Tch) up to 175 °C, thereby reducing the need for cooling measures. Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time, and highly accurate G2 SPICE models that accurately reproduce transient characteristics.

ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved
news_2025-10-01_9.png
Learn more:
dukosi.com
  • Industry News
  • 2025-09-23

Dukosi has achieved Automotive SPICE® (ASPICE) Capability Level 2 for development processes related to its next generation cell monitoring system for automotive and electric vehicle (xEV) applications. This important assessment milestone assures compliance with the demanding quality requirements of automotive customers and gives confidence that automotive software and systems are developed with consistent quality, reliability and safety. The intensive assessment was performed by UL Solutions in compliance with ASPICE PAM 4.0 (Process Assessment Model) and in accordance with the ISO/IEC 33002 standard and completed in September 2025. The Automotive Software Process Improvement and Capability Determination (ASPICE) standard, developed by the German Association of the Automotive Industry (VDA), has been established worldwide and is used by leading OEMs and suppliers to evaluate the development processes of software-based systems in and around the vehicle. UL Solutions’ rigorous assessment included Dukosi’s processes across system development, software development, support and project management, and the scope of this assessment went beyond the scope recommended by VDA. Reinforcing the company’s commitment to product safety, Dukosi’s development processes are in full alignment with ASPICE PAM 4.0 and ISO 26262.

Dispensable Thermal Gel offers Vertical Tackiness
news_2025-10-15_18.jpg
Learn more:
parker.com
  • Product Release
  • 2025-09-22

The Chomerics Division of Parker Hannifin introduced its THERM-GAP™ GEL 75VT, a dispensable thermal gel offering 7.5 W/m-K typical thermal conductivity. The fully cured product performs reliably in vertical and high-vibration applications, including those that are mission-critical. To ensure its suitability for conducting heat away from electronics to heatsinks or enclosures in demanding operating conditions, Parker Chomerics subjected GEL 75VT to several long-term reliability tests. The product passed automotive vertical slump testing, high-vibration testing and telecommunications thermal material verification processes. With its long-term reliability, THERM-GAP GEL 75VT can meet the requirements of design engineers who need their new electronic device to deliver consistent thermal performance over many years of continuous service. Automotive sensors and devices, telecommunications modules, BESS (battery and energy storage system) modules, industrial electronics, network and IT infrastructure, power electronics, and consumer electronics are all among potential beneficiaries. Only a very low compressive force is necessary to ensure deformation under assembly pressure. Fully RoHS-compliant, important electrical properties of THERM-A-GAP GEL 75VT include: 7.9 kVAC/mm dielectric strength (ASTM D149 test method); 1014 Ωcm volume resistivity (ASTM D257); 5.2 dielectric constant at 1,000 kHz/0.76 mm thick (ASTM D150); and 0.003 dissipation factor at 1,000 kHz/0.76 mm thick (Chomerics test method).

Groundbreaking for EMC Lab
  • Industry News
  • 2025-09-22

TDK is building a new EMC laboratory in Regensburg. It will replace the accredited laboratory that has been in existence for more than 60 years at a new location. The facility will offer internal and external customers state-of-the-art capabilities for measuring electromagnetic compatibility (EMC). The groundbreaking ceremony for the new laboratory has now taken place. TDK is investing a double-digit million euro amount in the new building. The new laboratory will have a total area of almost 1,700 square meters, 1,100 square meters of which will be used for the laboratory and measuring stations. A showroom and a large customer area with meeting rooms are also planned. The centerpiece of the laboratory is a new 10-meter semi-anechoic chamber, in which even large vehicles and powerful industrial applications can be measured. It is complemented by a 3-meter full-absorber chamber for RF and radio applications, which is claimed to enable "the fastest measurement methods at the highest frequencies", as well as a compact chamber for measuring automotive components such as control units or onboard chargers. This chamber is equipped with absorbers that are only ten centimeters deep.

Lift motor developed using Ferrite Magnets – without Rare Earth Materials
news_2025-10-01_2.jpg
Learn more:
ziehl-abegg.com
  • Industry News
  • 2025-09-19

Ziehl-Abegg claims to be "the first company worldwide to develop a high-performance synchronous lift motor that operates entirely without rare earth magnets – without compromising on power output". The new lift motor, which uses ferrite magnets, eliminates the need for critical raw materials such as neodymium and dysprosium, which have traditionally been considered indispensable for high-performance drives due to their power density. These rare earth elements are sourced almost exclusively from one single country. Despite foregoing rare earth high-performance magnets, this motor delivers identical performance – all within the same dimensions. This is a real advancement, particularly for high-torque lift applications where smooth operation and energy efficiency are critical. A patent application has already been filed.

Current/OS Foundation joined
news_2025-10-01_10.jpg
Learn more:
danisense.com
  • Industry News
  • 2025-09-18

Danisense has joined the Current/OS Foundation, a nonprofit, open partnership dedicated to ensuring reliable and sustainable hybrid AC/DC power distribution in buildings and installations. The aim of the foundation is to promote direct current electrical safety and to enhance energy resilience to ensure reliable access to electricity for all. The reason for joining is that Danisense "firmly believes that a swift and intelligent energy transition is possible through the wider adoption of DC microgrids, which are already proving superior to AC networks in several applications." According to Danisense "joining the Current/OS Foundation was a natural step for us to help shape the future of DC infrastructure."

100 V MOSFETs deliver low Conduction Losses
news_2025-10-01_16.jpg
Learn more:
nexperia.com
  • Product Release
  • 2025-09-18

Nexperia launched its AEC-Q101 qualified 100 V MOSFETs in compact CCPAK1212 (12 mm x 12 mm) copper-clip packaging. According to the company "these devices deliver ultra-low conduction losses with on-resistance as low as 0.99 mΩ, and enable safe current above 460 A". This makes them suited for thermally demanding 48 V automotive applications, including on-board chargers (OBC), traction inverters, and battery management systems (BMS). In addition to passenger vehicles, these MOSFETs also benefit 2- and 3-wheel e-mobility, DC/DC converters, and industrial high-current modules, where efficiency and thermal reliability are equally critical. The next-generation 100 V AEC-Q101 trench silicon platform, combined with the thermal performance (Rth(j-b) = 0.1 K/W) of Nexperia’s proprietary copper-clip CCPAK1212 package, enables this RDS(on). Together, these features provide the critical advantages required in 48 V automotive systems - high current capability, superior power density, and a robust Safe Operating Area (SOA) rating of up to 400 A at 100 V. The devices are available in a choice of inverted top-side cooled (CCPAK1212i) and bottom-side cooled (CCPAK1212) versions.

Manufacturing Partner for Power Devices
news_2025-10-15_2.png
Learn more:
idealsemi.com
  • Industry News
  • 2025-09-18

iDEAL Semiconductor confirms that its SuperQ™ silicon power devices are now in production at Polar Semiconductor, a foundry specializing in high-voltage, power, and sensor technologies. SuperQ uses a patented asymmetrical RESURF structure; it significantly reduces conduction and switching losses – with up to 2.7x lower resistance compared to legacy silicon and cutting switching losses by up to 2.1x versus competing devices. Polar Semiconductor operates a high-volume 200 mm manufacturing facility in Minnesota and is claimed to be "the only majority U.S.-owned foundry with deep expertise in high-voltage and power semiconductors". With a 50-year heritage in automotive production, Polar is IATF 16949 certified and committed to zero-defect manufacturing. iDEAL’s first products – 150 V and 200 V MOSFETs announced in July – are already in production at Polar, with 300 V and 400 V devices to follow. Polar is further expanding to double its manufacturing capacity and invest in next-generation technologies.

Semiconductor Company appoints President and CEO
news_2025-10-01_3.png
Learn more:
omnionpower.com
  • People
  • 2025-09-17

OmniOn Power has appointed David French as its new President and CEO. French has worked for more than 40 years in the semiconductor and electronics industries. Prior to joining OmniOn, he managed NXP’s Mobile and Computing Business Unit. French has also served as the CEO of Cirrus Logic, where he led the company’s transformation towards mixed-signal audio solutions. In addition, he’s held various senior-level positions at Texas Instruments and Analog Devices. French’s appointment follows the resignation of Jeff Schnitzer in August 2025, the company’s prior President and CEO.

Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels
news_2025-10-01_18.jpg
Learn more:
aosmd.com
  • Product Release
  • 2025-09-16

Alpha and Omega Semiconductor announced two Type-C sink and source protection switches to increase the power delivery capability of USB Type-C ports to 240 W, paving the way for Type-C extended power range (EPR) implementations. The AOZ13058DI offers overvoltage/overcurrent protection features suited for 48 V Type-C sinking applications, while the AOZ15953DI provides the additional protection features needed for Type-C sourcing applications. These switches help designers safeguard 48 V Type-C EPR capabilities to enhance reliability and functionality in high-performance and gaming laptops, personal computers, monitors, docking, and other higher-power connected portable devices. The AOZ13058DI features a 20 milliohm resistance and provides a set of features including programmable soft-start, overvoltage, ideal diode reverse-current, short-circuit, overcurrent, overtemperature, and ESD protection. These features also help isolate and protect downstream components from abnormal VBUS voltage and potentially harmful current conditions. Ideal diode fast reverse current protection allows multiple power paths to be connected in parallel without interference. The switch’s integrated positive and negative transient voltage suppression at VIN enhances immunity to voltage spikes meeting IEC safety standards (IEC61000-4-2: ±8 kV contact, ±15 kV contact; IEC61000-4-5: 20 A (8/20 µs) on VIN and VOUT). The AOZ13058DI also features a programmable current limit function, permitting its application as a sourcing switch in an EPR 3.1 docking system.

2-in-1 SiC Molded Module
news_2025-10-01_17.jpg
Learn more:
rohm.com
  • Product Release
  • 2025-09-16

ROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), suited for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the "TO-247" package while achieving design flexibility and power density. The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15 % and inductance by approximately 50 % compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration – achieving the same power conversion circuit in approximately half the volume. These products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed – making custom products necessary in many cases when using conventional SiC modules. Therefore, ROHM has developed each of these two topologies into a 2-in-1 module to support various configurations such as NPC circuits and DC/DC converters. Evaluation boards will also be made available.

LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply
news_2025-10-01_14.jpg
Learn more:
coilcraft.com
  • Product Release
  • 2025-09-16

The HTX8045C Series transformers from Coilcraft build on the proven chip-style construction of the HTX family – an improvement over conventional core and bobbin designs. This surface-mount configuration reduces component size and enhances manufacturing efficiency. With higher isolation voltage compared to the HTX7045C and an interwinding capacitance as low as 0.55 pF, the HTX8045C is particularly well-suited for use in isolated gate driver bias supplies employing the open-loop LLC topology to achieve low EMI noise and high CMTI (Common Mode Transient Immunity). These characteristics make it especially beneficial for high-frequency switches including SiC, GaN and IGBT technologies. The HTX8045C is AEC-Q200-qualified, making it suited for automotive traction inverters and motor controls, automotive on-board chargers (OBC), EV charging stations, battery management systems (BMS), automotive DC/DC converters as well as other automotive and industrial applications.

IGBT7 Modules for high Power Density and easier System Integration
news_2025-10-15_12.jpg
Learn more:
microchip.com
  • Product Release
  • 2025-09-16

Microchip announced a family of DualPack 3 (DP3) power modules featuring IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300–900 A. These DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions while reducing power losses by up to 15–20 % compared to IGBT4 devices. During overload temperatures may rise up to 175 °C. They are suited for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm × 62 mm × 20 mm, provide a second-source option to industry-standard EconoDUAL™ packages.

DualPack 3 IGBT7 Modules deliver High Power Density and simplify System Integration
news_2025-10-01_12.jpg
Learn more:
microchip.com
  • Product Release
  • 2025-09-16

Microchip Technology announced a family of DualPack 3 (DP3) power modules featuring advanced IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300 – 900 A. The DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions. These modules use the latest IGBT7 technology, engineered to reduce power losses by up to 15 – 20 % compared to IGBT4 devices and operate reliably at higher temperatures up to 175 °C during overload. DP3 modules enhance protection and control during high-voltage switching, making them suitable for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm × 62 mm × 20 mm, enable a frame size jump for increased power output. This type of power packaging eliminates the need for paralleling multiple modules and helps reduce system complexity and Bill of Materials (BOM) costs. Additionally, DP3 modules provide a second-source option to industry-standard EconoDUAL™ packages for greater flexibility and supply chain security for customers.

Fast Recovery Power Rectifier Assemblies
news_2025-10-01_11.png
Learn more:
deantechnology.com
  • Product Release
  • 2025-09-16

Dean Technology (DTI) extended their their power rectifier assembly line, the HRFS5 Series. They join the HRS5 series and HRS10 series of standard recovery power assemblies. The HRFS5 series follows the open frame concept found in the legacy HRS5 and HRS10 products, allowing for better thermal conductivity and are intended for ambient air applications but can also be used in submerged oil environments. It offers a reverse recovery time (TRR) of 75 ns maximum, which is good for switching applications. HRFS5 units offer a maximum repetitive reverse voltage range from 14.4 to 28.8 kV and 5.7 A of average forward current. All products in the HRFS5 series line are capacitor compensated and modular based.

Global Agreement to Distribute High-Energy Density Capacitors
news_2025-10-01_4.jpg
Learn more:
mouser.com
  • Industry News
  • 2025-09-15

Mouser Electronics announces a global distribution agreement with Quantic Evans, a company which is active in high-energy density capacitors for demanding mission-critical applications. Quantic Evans’ hybrid capacitors, known as EVANSCAPS, serve diverse markets, including aerospace, energy, and communications, where high-reliability, size, weight, and power (SWaP) are crucial. The Quantic Evans HyCap hybrid capacitors, available to order from Mouser, are designed to provide reliable operation in a wide range of harsh environments, including those with shock and vibration conditions. These devices are available in a capacitance range of 68 µF to 2700 µF with a ±20% tolerance, with a voltage range of 10 VDC to 150 VDC. The HyCap capacitor series’ robust construction makes them suitable for energy, industrial, space, and defence applications. They are built with patented hybrid wet tantalum technology - featuring a Tantalum Pentoxide anode and a Ruthenium Oxide cathode.

Cleanroom opening at Malaysian Wafer Fab
news_2025-10-15_5.jpg
Learn more:
xfab.com
  • Industry News
  • 2025-09-12

X-FAB celebrated the grand opening of a manufacturing line at its Sarawak facility. The ceremony was officiated by the Prime Minister of Malaysia, YAB Dato’ Seri Anwar Ibrahim, and the Sarawak Premier, YAB Datuk Patinggi Tan Sri Abang Johari Tun Openg. This major expansion – representing a $600 million investment – added 6,000 square meters of cleanroom space and was completed within two years, from groundbreaking to the first production lots. As a result, the site’s monthly wafer start capacity has increased from 30,000 to 40,000, with a key highlight being the more than doubling of capacity for X-FAB’s 180 nm BCD-on-SOI technology (XT018). BCD-on-SOI technology is superior in many aspects when compared to conventional bulk BCD technologies. Key advantages include virtual latch-up free circuits, strong EMC performance (due to complete isolation with buried oxide/DTI) and simplified handling of below ground transients. The XT018 platform features a portfolio of voltage options from 10 V to 375 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options. It is specifically designed for next generation automotive, industrial and medical applications operating in extreme temperature ranges from -40 to 175 °C.

Compact Power Modules for Consumer and Industrial Equipment
  • Product Release
  • 2025-09-11

Mitsubishi Electric has developed a compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The Compact DIPIPM series comprises the PSS30SF1F6 (30 A / 600V) and the PSS50SF1F6 (50 A / 600 V). By utilizing reverse-conducting IGBTs (RC-IGBTs), the module’s footprint has been reduced to almost 53 % of that of the company’s conventional Mini DIPIPM Ver.7, enabling more compact inverter substrates in packaged air conditioners and other applications. In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. Despite the smaller product size, the use of high-heat dissipation insulating sheet material suppresses temperature rise at the junction, achieving a current rating of 50 A. An additional interlock function contributes to the simplification of inverter substrate design, but it also simplifies the short-circuit protection design of inverter substrates. By maintaining the same insulation distance between terminals and the heat sink as that of conventional products, replacement of those products is facilitated. Furthermore, the lower limit of the continuous operating temperature is now extended to -40 °C.

500 W integrated Power Supplies for High-Rel Applications
news_2025-10-15_17.png
Learn more:
gaia-converter.com
  • Product Release
  • 2025-09-10

GAIA Converter has launched the GRD-50A-M series of scalable 500 W integrated power supplies for high-reliability markets such as military and aerospace. This family of commercial-off-the-shelf board power supplies, designed for 24 VDC and 28 VDC input, complies with major military standards, including MIL-STD-1275, MIL-STD-704, and MIL-STD-461. Key specifications and features include a 16-38 VDC permanent input voltage with transient voltage protection of up to 100 VDC, as well as reverse polarity and overload protection. The power supplies offer a total output power of 500 W with 12 VDC, 15 VDC, 24 VDC or 28 VDC output voltage. The GRD-50A-M series features an overall efficiency of 89 %, with full protection for output short circuit (hiccup mode), overvoltage, and overtemperature. The series features 1500 VDC primary-secondary isolation and 500 VDC chassis ground isolation. Overall board dimensions are 255 × 70 × 24.25 mm³ and operating temperatures extend from -40 °C to +85 °C base-plate. Furthermore, the GRD-50A-M comes in a range of different configuration options, including board only (/B), coated (/V), and parallel (/P).

Power Supply Unit Reference Design for AI Data Centers and Servers
news_2025-10-01_15.jpg
Learn more:
infineon.com
  • Product Release
  • 2025-09-10

Infineon Technologies has introduced a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials silicon, silicon carbide and gallium nitride. It is aimed at research and development engineers, hardware designers, and developers of power electronics systems. To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC™ technology. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformer and Infineon’s CoolGaN™ technology. These architectures, combined with the company’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in³. Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events.

Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale
news_2025-10-01_5.png
Learn more:
wolfspeed.com
  • Industry News
  • 2025-09-10

Wolfspeed announced the commercial launch of its 200 mm SiC materials products. Wolfspeed is also offering 200 mm SiC epitaxy for immediate qualification, which, when paired with the company’s 200 mm bare wafers, delivers high scalability and improved quality, enabling the next generation of high-performance power devices. The improved parametric specifications of the 200 mm SiC bare wafers at 350 µm thickness and "enhanced, industry-leading doping and thickness uniformity of the 200 mm epitaxy" is claimed to enable "device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions across automotive, renewable energy, industrial, and other high-growth applications".

3 kA TVS Diode in Compact Surface Mount Package
news_2025-10-01_19.jpg
Learn more:
littelfuse.com
  • Product Release
  • 2025-09-09

Littelfuse launched the DFNAK3 Series of High-Power TVS Diodes. These surface mount devices deliver 3 kA (8/20 µs) surge current protection - claimed to be the highest available in such a small footprint - making them suited for safeguarding DC-powered systems and Power over Ethernet (PoE) applications in demanding environments. Unlike traditional high-surge TVS diodes that come in bulky axial-leaded or large surface mount packages, the DFNAK3 Series uses a compact DFN package - "making it the smallest 3 kA-rated TVS diode on the market today". It offers a 70 % smaller footprint than overcoated alternatives and is also 70 % lower in height than standard SMD-type coated packages. This enables space-constrained, high-density PCB designs without compromising surge performance or system robustness. Engineered to meet IEC 61000-4-5 Level 4 requirements, the DFNAK3 Series provides an alternative to standard TVS diodes, MOVs, and GDTs. The surface mount configuration also supports cost-effective, automated PCB assembly, reducing overall production complexity.

MoU to develop high-performance GaN-based Inverters for Light Evs
news_2025-10-01_1.jpg
Learn more:
infineon.com
  • Industry News
  • 2025-09-09

Infineon Technologies and Lingji Innovation Technology, a subsidiary of Ninebot, signed a Memorandum of Understanding (MoU) to further drive gallium nitride technology in the area of light electric vehicles (LEV). Infineon provides GaN products supporting Lingji to develop electric two-wheeler inverter systems based on Infineon’s new-generation CoolGaN™ G5 power transistors. Specializing in smart control technologies, Lingji will use its algorithms to target improved drivetrain efficiency at higher power density levels and higher switching frequencies. Considering China’s new standard, that e-Scooter’s plastic mass shall not exceed 5.5 % of vehicle mass, GaN became a preferred choice as it can reduce the number of passive components for space optimization. The MoU aims to design GaN motor drive technologies for 48 V – 72 V solutions to provide compatible core components for high-end models and shared mobility scenarios. For consumers, LEVs stand out as an affordable and accessible entry point into electric mobility. Unlike cars, LEVs typically do not rely on extensive charging infrastructure, as removable batteries allow users to charge at home using standard electrical sockets. Industry analyst McKinsey estimates that this market will reach $340 billion by 2030. Both Infineon and Lingji think that LEVs, with their affordability, ease of access, and environmental benefits, "are leading the transition to vehicle electrification around the world".

Fabless GaN Manufacturer changes CEO
  • People
  • 2025-09-08

Wise Integration appointed Ghislain Kaiser as Chief Executive Officer. Kaiser succeeds CEO and co-founder, Thierry Bouchet, who will continue to serve as Chief Technology Officer and General Manager, leading the worldwide R&D and driving the technological vision. In 2006, Kaiser cofounded Docea Power, a French EDA startup pioneering full-chip, system-level power and thermal modelling, with the vision of addressing the growing power-consumption and thermal challenges in IC and platform design. As CEO, he led the company to domain leadership and its acquisition by Intel in 2015. He then joined Intel, where for the next decade he held senior director roles, most recently overseeing system-simulation engineering and worldwide customer-enablement organization. Those programs tackled critical power, thermal, and performance challenges in designing consumer, data-center, and AI systems. Kaiser began his career at STMicroelectronics, where he held technical and leadership positions across test and product engineering, design, and architecture teams. ‘Wise Integration spun out from CEA Leti in 2020 using the institute’s GaN-on-silicon R&D platform.

Distribution Agreement for Transformers and Coils
news_2025-10-15_6.jpg
Learn more:
anglia-live.com
  • Industry News
  • 2025-09-08

Anglia Components has signed an exclusive agreement for UK and Ireland with Hahn, a German manufacturer of standard and custom transformers and inductive coils. The product range includes among other products parts targeted at switch-mode power supplies, EMC and boiler-ignition. Hahn was one of the first winding goods manufacturers to implement the stringent requirements of DIN ISO 9001:2015 and has optimized its processes and quality management to meet even tougher VDA Volume 6.3 (Automotive Standard) regulations.

High-Efficiency Power Chokes
  • Product Release
  • 2025-09-08

ITG Electronics highlights its portfolio of power factor correction (PFC) chokes: the PFC282820 Series, purpose-built for 800 – 5000 W continuous conduction mode PFC boost converter applications in high-wattage industrial and automotive systems. Featuring a 27.5 mm × 20 mm footprint with a height of 28.5 mm, the PFC282820 Series helps design engineers to meet demanding power density requirements without sacrificing efficiency. A wider configuration (27.5 mm × 28.5 mm) is also available to support higher current handling needs, all within the same 5,000 W power ceiling. Part of ITG’s Cubic Design PFC Choke lineup, the PFC282820 Series utilizes flat wire and a square core to deliver enhanced power density and thermal performance compared to traditional toroidal alternatives. The series is engineered to support the evolving requirements of AC to DC power conversion in next-generation industrial and automotive electronics. The PFC282820 Series supports inductance ranges from 33 – 330 µH, with custom values available upon request. High-current output options can handle up to 46 A, with approximately 50 % roll off for superior performance under load.

3.3 kV SiC MOSFET Lineup and Linecard
news_2025-10-01_20.jpg
Learn more:
nomispower.com
  • Product Release
  • 2025-09-05

NoMIS Power Corporation announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080MP330 - a planar device with an on-resistance of 80 mΩ (34 A) and "best-in-class figures of merit". Key application areas include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives. The company offers the N3PT080MP330K 3.3 kV SiC MOSFET in TO-247 4L with high voltage creepage notch for industrial environments. This device is complemented by NoMIS Power’s 160 mΩ SiC bi-directional switches, giving designers multiple options to precisely match device performance to application requirements. The 3.3 kV lineup will expand later this year with the launch of a 50 mΩ (55 A) SiC MOSFET, followed in 2026 by a 25 mΩ (109 A) SiC MOSFET. Samples of are available in both bare die (binned by threshold voltage) and discrete package for temperatures up to 175 °C. In energy and infrastructure the devices are suited for battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks, while the main applications in the transportation and marine sector are railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, and ship-to-shore power for ports. In charging and industrial systems the devices enable ultra-fast EV charging stations and large industrial motor drives with power conditioning and processing control.

200 V Family of SuperQ-based MOSFETs
news_2025-09-15_22.jpg
Learn more:
idealsemi.com
  • Product Release
  • 2025-09-04

iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum RDS(on) of just 5.5 mΩ. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.

Three-Phase Sinewave Filter
news_2025-09-15_19.jpg
Learn more:
emisglobal.com
  • Product Release
  • 2025-09-04

EMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions.

SiC MOSFETs Adopted in Inverter Brick
news_2025-09-15_1.jpg
Learn more:
rohm.com
  • Industry News
  • 2025-09-04

ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.

Expansion of European Distribution Centre and Headquarters
news_2025-09-15_5.jpg
Learn more:
ttieurope.com
  • Industry News
  • 2025-09-03

TTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m² of new warehouse and logistics capacity and 6,000 m² of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees.

ECPE Workshop ’Ultra-High-Voltage Power Electronics’
news_2025-09-15_3.jpg
Learn more:
ecpe.org
  • Event News
  • 2025-09-03

The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy.

Automotive High-Withstand Voltage LDO Linear Regulator IC
news_2025-09-15_21.png
Learn more:
ablic.com
  • Product Release
  • 2025-09-02

ABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0µA, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety.

600 W Automotive TVS Diode
news_2025-09-15_20.jpg
Learn more:
littelfuse.com
  • Product Release
  • 2025-09-02

Littelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required.

GaN-on-Si Foundry Services
news_2025-09-15_2.png
Learn more:
xfab.com
  • Industry News
  • 2025-09-02

X-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others.

New Brand Identity and Tagline: "In Everything, Better"
news_2025-09-15_10.jpg
Learn more:
tdk.com
  • Industry News
  • 2025-09-01

TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create."

150 V MOSFETs in TOLL, TOLG, and TOLT Packages
news_2025-09-15_16.jpg
Learn more:
infineon.com
  • Product Release
  • 2025-09-01

Infineon Technologies has expanded its OptiMOS™ 6 portfolio by introducing the Automotive 150 V MOSFET family. These devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest RDS(on) available in this class, reaching as low as 2.5 mΩ. This enables minimal conduction losses and excellent efficiency. The tight distribution of the gate threshold voltage (VGS(th)) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.

40 Watt DC/DC Converter
news_2025-09-15_14.jpg
Learn more:
tracopower.com
  • Product Release
  • 2025-09-01

The THL 40WI series extends Traco Power’s existing DC/DC converter portfolio with 40 Watt, 1′ × 1′ package converters. With the focus on combining cost efficiency and quality this isolated high performance DC/DC converter series is suitable for many different applications. The series comes in an encapsulated, shielded 1 × 1′ × 0.43′ metal package and offers integrated remote on/off and trim functions. High efficiency up to 93% enables the converter to operate from –40°C to +65°C without derating. All models have a wide 4:1 input voltage range and precisely regulated, isolated outputs. The series meets the latest IT safety certifications (UL 62368-1) and is suitable for uses in mobile equipment, instrumentation, distributed power architectures in communication and industrial electronics and everywhere where cost efficiency and quality are critical factors.

Strategic Distribution Partnership to Expand Presence Across APAC
  • Industry News
  • 2025-08-29

Lotus Microsystems and EDOM Technology jointly announced the signing of a strategic distribution agreement for the Asia-Pacific region. This collaboration combines Lotus Microsystems’ power management solutions with EDOM Technology’s extensive distribution network, strong field application engineering (FAE) force, and deep market expertise. The partnership is designed to accelerate customer adoption, deliver superior technical support, and strengthen the presence of both companies across the fast-growing APAC markets. Power and thermal management are crucial aspects of electronic design, especially in the rapidly developing computing, networking, and IoT markets. Effective thermal management ensures that devices operate within a safe temperature range, optimizing performance and extending their operational life. Lotus Microsystems’ work on high-efficiency power modules supports more sustainable computing by reducing energy losses and improving overall power usage effectiveness. "We are delighted to partner with EDOM Technology, a recognized leader in distribution across Asia. This agreement marks an important step in our global expansion, enabling Lotus Microsystems to better serve customers in key APAC markets with the strong support and capabilities that EDOM provides."said Hans Hasselby-Andersen, CEO of Lotus Microsystems.

CAN FD Transceiver Achieves Toyota VeLIO Certification
news_2025-09-15_17.jpg
Learn more:
novosns.com
  • Product Release
  • 2025-08-29

NOVOSENSE Microelectronics recently announced that its automotive-grade CAN FD transceiver, the NCA1044-Q1, has successfully passed Toyota’s VeLIO (Vehicle LAN Interoperability and Optimization) certification. Prior to this, the device had already obtained the IBEE/FTZ-Zwickau EMC certification in Europe. The certification process involves stringent testing, including Transceiver Delay, dV/dt characteristics, R>D and D>R Distortion Delays, Static and Frequency Response of Threshold Voltage, Single-Ended S-Parameters, and Static Tests. The NCA1044-Q1 successfully passed all these tests, underscoring its capabilities in high-speed communication, signal integrity, and electromagnetic compatibility. In addition to VeLIO, the NCA1044-Q1 has also been certified by IBEE/FTZ-Zwickau according to the IEC 62228-3 standard, while also meeting Volkswagen’s VW80121-3, 2023-12 EMC requirements. Unlike SAE J2962, the IEC 62228-3 standard focuses directly on the EMC performance of the transceiver itself, making the certification one of the most rigorous benchmarks in the automotive industry and a widely referenced standard across global automakers. The IBEE/FTZ-Zwickau EMC certification covers four major categories: Emission RF Disturbances, Immunity to RF Disturbances, Immunity to Transients, and Immunity to ESD. The NCA1044-Q1 passed all tests successfully, providing high confidence in its robustness under demanding automotive conditions. With both VeLIO and IBEE/FTZ-Zwickau certifications, the NCA1044-Q1 significantly reduces its implementation and system verification costs for OEMs and Tier 1 suppliers.

Power Modules to Accelerate Data Center Power Architecture
news_2025-09-15_12.jpg
Learn more:
infineon.com
  • Industry News
  • 2025-08-28

Infineon Technologies announced the strengthening of its existing collaboration with Delta Electronics in the development of high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers. Together, the companies are taking a next step to drive decarbonization and digitalization in AI data centers further. The partnership leverages Infineon’s ultra-thin silicon (MOSFET) chip technology and embedded packaging expertise, as well as Delta’s industry-leading power module design and manufacturing capabilities. This results in highly dense modules with exceptional efficiency to enable vertical power delivery (VPD) architecture to the xPUs in hyperscale data centers. The usage of vertical power delivery modules in comparison to a lateral mounted discrete solution can save up to 150 tons of CO2 over an expected lifetime of three years per rack. Assuming that future hyperscale data centers will consists of up to 100 server racks, the amount of carbon dioxide saved is equivalent to the CO2 emissions of 4000 households per year. Infineon’s OptiMOS™ silicon-based 90 A integrated power-stage solution is being utilized by Delta to develop VPD modules. The use of vertical power delivery is a key factor in improving system efficiency as it allows for a more direct and compact power delivery path. By delivering power vertically, rather than horizontally, the VPD modules reduce power delivery network losses in the system. This, in turn, enables the modules to achieve higher power density and efficiency, while also reducing the amount of heat generated due to less power loss. Additionally, the vertical power delivery design also frees up space on the system board, allowing hyperscalers a more efficient use of space and the development of more compact and dense data center designs reducing total-cost of ownership.

Jingya Huang Appointed Senior Manager Marketing Communications
news_2025-09-15_7.jpg
Learn more:
indium.com
  • People
  • 2025-08-28

With its commitment to innovation and growth through employee development, Indium Corporation announces the promotion of Jingya Huang to Senior Manager, Marketing Communications, to continue to lead the company’s branding and promotional efforts. In her new role, Huang is responsible for the strategic direction of Indium Corporation’s global marketing communications initiatives, focusing on innovation and maximizing impact in markets worldwide. She will continue to lead the Marketing Communications team with an emphasis on fostering innovation, ownership, and collaboration. Huang will also provide strategic support to other internal teams and lead high-priority special projects that advance the company’s mission and global presence. Huang joined Indium Corporation as Marketing Communications Assistant Manager in 2016. She was promoted to Marketing Communications Manager in 2020, at which point she began leading all global marketing communications efforts and the entire Marketing Communications team.

Digital Hall latch IC in CMOS technology
news_2025-09-15_18.png
Learn more:
melexis.com
  • Product Release
  • 2025-08-28

Melexis unveils a variant of the MLX92211, a 3-wire Hall-effect latch. This device is designed for lateral magnetic position sensing, with high ESD protection and a high output current limit. This latest addition enables motor miniaturization by providing enhanced integration and cost-effective performance, ideal for automotive compact motors used in applications such as seat motors, sunroofs and thermal expansion valves. The MLX92211 IMC addresses these head-on with an integrated magnetic concentrator (IMC) that enables lateral sensing in a surface-mount device (SMD) TSOT-3L package – eliminating the need for through-hole components and aligning with modern automated assembly processes. The result is a reduced motor height, improved packaging flexibility, and optimized manufacturing workflows. The single-package device integrates a voltage regulator (2.7 to 24V operating range), a Hall effect sensor with advanced offset cancellation, and an open-drain output driver. The magnetic core’s enhanced offset cancellation system facilitates faster, more accurate, and robust processing, irrespective of temperature and stress, and includes a negative temperature coefficient to counteract the natural weakening of magnets at high temperatures. The robust latch sensor can be used in both 3-wire and 2-wire (with external resistor) configurations, with the 30mA current limit easily sufficient for maintaining safe and consistent operation in environments such as seat motors – where continuous current up to 25mA is often required. Combined with strong electrostatic discharge (ESD) protection (8kV), automatic output shut-off with self-recovery, and ASIL A functional safety readiness, the MLX92211 IMC meets the reliability requirements of modern automotive deployments.

ReVolt Charges up Hollywood’s Clean Energy
news_2025-09-15_9.jpg
Learn more:
vicorpower.com
  • Industry News
  • 2025-08-27

Most production companies today rely on gasoline and diesel generators to operate their movie sets. But as these become more elaborate - with enormous footprints and an expanding array of specialized electronics - energy demands have escalated, as have unwanted levels of dangerous CO2 emissions. ReVolt Holdings has developed a better way to power movie sets and studio backlots by providing clean, mobile, always-on electricity. ReVolt systems power everything - from cameras, sound and lighting equipment to special effects rigs and basecamps - quietly, efficiently and with no CO2 output. Diesel generators also produce "dirty" power that requires extra filtration when used in sensitive digital lighting and motion control equipment. ReVolt charging systems produce a pure sine wave profile that ensures a clean, stable power source. To ensure stable voltage levels, ReVolt adopted Vicor BCM® bus converters, DCM™ DC-DC converters, and most recently, PRM™ regulators. The BCM4414 converts and isolates 800V into a 48V at 35A bus, which the DCM3414 taps off to regulate 24V loads. The 770W/in³ BCM4414 also serves as a battery emulator, reducing the need for a conventional and bulky 48V battery. The PRM is a non-isolated buck-boost DC-DC regulator capable of converting 48V into various output voltages, with power density exceeding 2kW/in³ and 96% efficiency. Portable, clean energy is in demand today more than ever. As it imprints its power concept on the film industry, ReVolt is preparing to address a variety of new applications, from servicing natural disaster zones to providing power for construction and live events. With the trend toward eMobility and greener, more sustainable power, the relationship with Vicor - grounded in modular power delivery - is gaining momentum and setting the stage for a greener future.

Strengthening Supply Resilience of Key Material for Global Semiconductor Industry
news_2025-09-15_8.JPG
Learn more:
asahi-kasei.com
  • Industry News
  • 2025-08-26

Asahi Kasei will increase PIMEL™ photosensitive polyimide (PSPI) production capacity at its Fuji City facility in Shizuoka Prefecture, Japan. PSPI is a key material for the global electronics industry, mainly used for buffer coatings and passivation layers in semiconductor applications. By doubling its capacity by 2030, Asahi Kasei underlines its commitment to growing its Electronics business and reinforcing its position as a key supplier for the global semiconductor industry. With the global semiconductor industry entering a new growth cycle and projected to surpass US$1 trillion in revenue by the mid-2030s, as reported by consulting firm Alvarez & Marsal, Asahi Kasei has forecasted that the demand for next-generation semiconductor interlayer insulation will continue to grow rapidly at an average annual growth rate of 8%. In response to this quickly rising demand, Asahi Kasei completed the construction of a new plant producing PIMEL™ photosensitive polyimide in Fuji City, Shizuoka Prefecture, in December 2024. Since then, the company has decided to expand production in Fuji City further, doubling the 2024 capacity by 2030. This expansion is expected to significantly improve the supply resilience of essential materials in the manufacturing of semiconductors. Asahi Kasei will invest approximately ¥16 billion in this expansion.

Conference on Production Technologies and Systems for Electric Mobility (EPTS)
  • Event News
  • 2025-08-25

The Electric Drives Production Conference (E|DPC) is expanding to become the Conference on Production Technologies and Systems for Electric Mobility (EPTS), taking place in Karlsruhe, Germany October 8 & 9. Join leading experts from industry and research for two days packed with high level keynotes, sound technical presentations and networking opportunities.

New CEO of WBG Power Semiconductor Company
news_2025-09-01_5.png
Learn more:
navitassemi.com
  • People
  • 2025-08-25

Navitas Semiconductor's Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. He will also join the Company's Board of Directors. The new CEO succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025. Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics, including Senior Vice President and General Manager of its Power Division from October 2023. Chris Allexandre oversaw Renesas' $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas' acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas' Chief Sales and Marketing Officer from 2019 to 2023. Prior to his tenure at Renesas, Navitas' new CEO held executive roles at Integrated Device Technology (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Chris Allexandre began his career at Texas Instruments, beginning in its New College Graduate rotation program, and over 16 years in business and sales roles based in Europe and China, becoming TI's Vice President of Sales for EMEA and a member of TI's strategic leadership team in 2012. Allexandre's management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets. Chris Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l'Électronique et du Numérique (ISEN) in Lille, France.

Back to School Giveaway to Empower Tomorrow’s Innovators
news_2025-09-15_4.png
Learn more:
digikey.com
  • Industry News
  • 2025-08-25

DigiKey announces its annual Back to School Giveaway, which offers university students a chance to win products and swag, including one grand prize of a Teledyne LeCroy Power Supply unit. Five entrants will be randomly selected to win a prize package that includes products such as an Aven Tools LED lamp, a Pokit Innovations all-in-one digital tool, a Weidmüller wire stripper, an Adafruit Ladyada’s electronics toolkit, DigiKey swag and more. Plus, one grand prize winner will also receive a Teledyne LeCroy Power Supply unit. "Each year, the Back to School Giveaway is a celebration of curiosity, creativity and the bright future ahead," said Brooks Vigen, senior director of global strategic marketing at DigiKey. "DigiKey is proud to support students as they turn bold ideas into real-world innovations, and we’re excited to see how this generation will shape the technologies of tomorrow." The sweepstakes is open to any student with a university or college email address, and entries may be made in students’ local language. Submissions are open until Oct. 24, 2025, and winners will be announced around Nov. 15, 2025.

Collaboration on SiC Power Semiconductor Wafers
  • Industry News
  • 2025-08-22

Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support. Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.

RT Box Workshop in Zurich
news_2025-09-01_7.jpg
Learn more:
plexim.com
  • Industry News
  • 2025-08-21

In the workshop, you will learn modeling techniques for real-time simulations using PLECS with the PLECS RT Box. You will work hands-on with hardware-in-the-loop (HIL) and rapid control prototyping (RCP) application examples. You will see that step size can be reduced to nanoseconds, even for large-scale models. In addition to the technical aspects, the workshop offers an opportunity to connect with the developers of PLECS. The required software and PLECS RT Box hardware will be provided for the workshop.

USB-C Power Solution with Three-Level Topology
news_2025-09-15_13.jpg
Learn more:
renesas.com
  • Product Release
  • 2025-08-20

Renesas Electronics introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller. The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications. The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses. The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.

SMD Heat Sinks from the Tape
  • Product Release
  • 2025-08-15

With the SMD heatsink product group Fischer Elektronik claims to offer "the smallest ribbon heatsinks, also available as tape & reel as standard now, especially for cooling electronic devices on the PCB". The packaging form of the SMD heatsinks as a tape & reel supports and simplifies the automatic assembly and soldering process of the PCB, as the SMD heatsinks can be handled in a similar way to an SMT component. The heatsink designs ICK SMD A 13 ... B TR, ICK SMD F 8 ... TR, ICK SMD F 21 ... B TR, ICK SMD K 19 ... B TR, ICK SMD N 8 ... TR and ICK SMD N 19 ... B TR are optionally available with a black anodised or solderable surface coating as a tape & reel (TR) version. Depending on the position of the SMD heatsink in the tape, an additional kapton point acts as a mounting aid. The tape diameter for all designs is 330 mm, with a tape width of 16, 24 or 32 mm, depending on the heatsink size. All specifications, such as tape diameter, tape width and the number of SMD heatsinks on a reel, can also be adapted to customer-specific requirements.

Changes in Management Positions at Würth Elektronik eiSos Group
news_2025-09-01_1.jpg
Learn more:
we-online.com
  • People
  • 2025-08-14

Dirk Knorr has taken over the position of COO of the Würth Elektronik eiSos Group. After completing his training as an industrial electronics technician and subsequently graduating with a degree in industrial engineering, Dirk Knorr initially worked as a project manager for a solutions provider before joining Würth Elektronik in 2005. Knorr has extensive expertise in quality and risk management. As part of his role as Managing Director Germany, he has driven forward digitization projects and initiated logistics adjustments at the Waldenburg site, among other things. In his new role, Mr. Knorr will be responsible for the company's core operational pillars, including IT, digital transformation, production, logistics, quality, and eiSos Group compliance standards. Simultaneously, Sebastian Valet has taken over Dirk Knorr's previous position as Managing Director of Würth Elektronik eiSos. Sebastian Valet holds a degree in business administration and has been with the Würth Group since 1999, where his career path led him to Würth Elektronik in 2002. As export manager, Valet played a key role in the internationalization of Würth Elektronik and established the markets in Israel, Turkey, and Australia before taking over several commercial departments at the headquarters in Waldenburg. Most recently, he was responsible for supply chain management, internal sales, export control, and legal & compliance. Following the change in leadership, the management team at Würth Elektronik eiSos now consists of the following members: Thomas Garz, Chief Executive Officer (CEO) of the Würth Elektronik eiSos Group; Alexander Gerfer, Chief Technology Officer (CTO), Würth Elektronik eiSos Group; Dirk Knorr, Chief Operating Officer (COO); Sebastian Valet, Managing Director; Josef Wörner, Managing Director.

Materials Informatics will "revolutionize Battery Development"
news_2025-08-15_7.png
Learn more:
idtechex.com
  • Industry News
  • 2025-08-12

The traditional battery materials discovery process involves physics-informed trial-and-error, which is both expensive and time-consuming. Machine learning methods, specifically materials informatics for discovering electrolyte, electrode, current collector and packaging materials, could provide a necessary avenue for accelerating the battery development process. IDTechEx has now published a report on materials informatics for batteries named "AI-Driven Battery Technology 2025-2035: Technology, Innovation and Opportunities". Materials informatics describes a field of machine learning in which data science is used to screen and discover materials for specific use-cases. It is a technology that has existed for several decades, and a successor to bio-informatics, revolutionizing the pharmaceutical industry. An emerging technology is de novo design, describing materials informatics that utilizes generative AI to design entirely novel materials. A scoring agent and a generative agent work in tandem to score theoretical materials, eventually selecting a candidate with the highest potential for the given application. Meanwhile, de novo design is relatively immature, and though it has seen some success, most of this is in research rather than in the commercial world. Completely novel materials also lack existing supply chains, and as such they are expensive to synthesize as they do not benefit from economy of scale. Generally, IDTechEx predicts that well-established chemistries will heavily favor virtual screening approaches over de novo design, while less established chemistries will require de novo design. IDTechEx predicts that materials informatics will become a necessary part of the battery development over the next decade, especially as new chemistries like lithium-metal become more common.

Survey reveals how Data is powering the Future for Solar Energy Innovation and Growth
news_2025-08-15_6.jpg
Learn more:
fluke.com
  • Industry News
  • 2025-08-12

A survey, conducted by Censuswide on behalf of Fluke, on key challenges for the solar industry identifies improving panel efficiency, transitioning from reactive to predictive maintenance, and adopting smart technologies as top priorities. Crucially, data emerges as the driving force behind innovation and operational efficiency. The survey engaged over 400 solar OEMs, technicians, and installers across the UK, Germany, Spain and the USA to gain insights. The survey results also highlighted their attitudes toward emerging trends and their expectations for how the future of solar energy is likely to evolve in the coming years. The research revealed that nearly two-thirds of respondents (63%) believe solar will become the dominant energy source in their country. However, it also highlighted significant challenges that must be addressed to turn this optimistic vision into reality and pave the way for a solar-powered future. One of the challenges that emerged in the survey's findings is the need to rapidly shift from reactive maintenance to a more proactive approach. With 91% of those surveyed reporting concerns about the efficiency of the current generation of solar modules and 39% of respondents identifying inverter failures as a common issue, it's clear an effective maintenance strategy is a necessity. Nearly a third of all respondents described their current maintenance strategy as reactive, while more than half indicated that implementing predictive maintenance was a key priority. 59% stressed the need to train technicians in advanced diagnostic tools to address evolving challenges, while 45% view AI integration in solar panel design, optimization, and maintenance as a key opportunity.

Fire Protection Materials for EV Batteries 2025-2035: Markets, Trends, and Forecasts
news_2025-08-15_4.png
Learn more:
idtechex.com
  • Industry News
  • 2025-08-12

IDTechEx's report on Fire Protection Materials for Electric Vehicle Batteries analyzes trends in battery design, safety regulations, and how these will impact fire protection materials. The report benchmarks materials directly and in application within EV battery packs. The materials covered include ceramic blankets/sheets (and other non-wovens), mica, aerogels, coatings (intumescent and other), encapsulants, encapsulating foams, compression pads, phase change materials, polymers, and several other materials. IDTechEx predicts this market will grow at 15% CAGR from 2024 to 2035. By the way: Data continues to support the fact that EVs are less likely to catch fire than internal combustion engine vehicles. However, as a new technology, EVs get more press. Each cell format – prismatic, pouch and cylindrical – has different needs in terms of inter-cell materials which has led to trends in fire protection material adoption. For example, cylindrical systems have largely used encapsulating foams, whereas prismatic systems typically use materials in sheet format such as mica. The market for fire protection materials is becoming increasingly crowded, with a wide range of materials and suppliers available. IDTechEx's material database covers over 150 materials from 72 suppliers. The major categories are benchmarked in the report in terms of thermal conductivity, density, cost, and cost in the required application volume. The report also discusses the regulations that are currently in place and those being discussed. These feed into IDTechEx's market forecasts showing a greater adoption of fire protection materials per vehicle.

TVS Diode for high-speed Consumer Interfaces
  • Product Release
  • 2025-08-12

TDK Corporation has expanded its TVS diode lineup with three models in the SD0201 series, tailored for high-speed consumer electronics interfaces. These TVS diodes offer compact protection for USB Type-C, HDMI, DisplayPort, and Thunderbolt connections in smartphones, laptops, tablets, wearables, and networking devices. Each component comes in a 0201 chip-scale package (CSP), measuring 0.58 x 0.28 x 0.15 mm³ (L x W x H) for space-constrained designs. Having working voltages of ±1 V, ±2 V, and ±3.6 V, the TVS diodes safeguard sensitive circuits from electrostatic discharge (ESD) and transient surges. This means they meet IEC 61000-4-2 standards with ESD discharge robustness up to ±15 kV and support surge current handling up to 7 A, depending on the variant. Their symmetrical design enables bidirectional protection and thus flexible PCB routing, while very low leakage currents and dynamic resistance as low as 0.16 Ω enhance application-level efficiency. The individual components differ in their DC working voltage and parasitic capacitance: the SD0201SL-S1-ULC101 has a working voltage of ±3.6 V and a parasitic capacitance of 0.65 pF, the SD0201-S2-ULC105 of ±2 V and 0.7 pF, and the SD0201SL-S1-ULC104 of ±1 V and 0.15 pF. A LTspice model library for SEED simulations for TVS diodes is available for download.

eFuse Meets High Reliability Server Application Requirements
news_2025-09-15_15.jpg
Learn more:
aosmd.com
  • Product Release
  • 2025-08-12

Alpha and Omega Semiconductor announced the release of its AOZ17517QI series, a 60A eFuse in a compact 5mm x 5mm QFN package. AOS optimized this eFuse product series for 12V power rails in servers, data centers, and telecom infrastructure. Due to high-reliability requirements for datacenter and telecom infrastructure products, all critical power rails are monitored and protected by an eFuse device to protect the main power bus from interruption due to abnormal load under fault conditions. AOS’ eFuse continuously monitors the current flowing through the power switch. If the current exceeds the set limit, the switch will limit the current to the maximum allowed. If the high current load persists, the switch will eventually turn off, protecting downstream loads from damage, thus acting as a fuse. The eFuse is constructed with AOS’ advanced co-packaging technology that combines a high-performance IC with protection features and the company’s latest high SOA Trench MOSFET. The AOZ17517QI series’ MOSFET offers low RDS(ON) (0.65mohm) that isolates the load from the input bus when the eFuse is off. These devices are designed to integrate accurate analog current and voltage monitoring signals, and designers can also use multiple eFuse devices in parallel for higher current applications. Multiple devices can operate concurrently and seamlessly distribute the current during the startup phase. In addition, the AOZ17517QI features startup SOA management and other protections, enabling a streamlined and glitch-free system power-up or the ability to hot plug into the backplane.

Global Renewable Power installed Capacity to surge to 11.2 TW by 2035
news_2025-08-15_3.png
Learn more:
globaldata.com
  • Industry News
  • 2025-08-12

Renewable resources, particularly solar photovoltaic (PV) and wind energy, are gaining a larger share in the energy portfolio. Driven primarily by declining costs and strong policy support, particularly for solar PV and wind energy, the global renewable power installed capacity is estimated to surge from 3.42 TW in 2024 to 11.2 TW by 2035, according to GlobalData. The company's latest report, "Renewable Energy: Strategic Intelligence", reveals that the global renewables market expanded from a cumulative installed capacity of 0.93 TW in 2015 to 3.42 TW by the end of 2024, representing a compound annual growth rate (CAGR) of 16 %. The total cumulative installed capacity is projected to record a CAGR of 11 % during the period 2024-35. Solar PV and wind power were significant contributors to the renewable energy sector, accounting for 56 % and 33 % of the total installed capacity in 2024, respectively. The APAC region has emerged as the largest market for solar PV and wind installed capacity, boasting 1.18 TW and 0.67 TW in 2024, respectively. Artificial intelligence is transforming the renewable energy sector by enhancing generation optimization, advancing grid management, and increasing efficiency across multiple systems. AI algorithms possess the capability to forecast renewable energy production, oversee grid operations in real-time, and refine energy storage strategies. These advancements contribute to heightened reliability and efficiency, thereby rendering renewable energy more effective and economical. Looking ahead, the onshore wind sector is forecasted to grow to $186.9 billion (CAGR: 4 %) and the offshore wind sector to $150.4 billion (CAGR: 14 %) by 2030.

Europe remains committed to growing Offshore Wind Energy
  • Industry News
  • 2025-08-12

A study conducted by Morningstar DBRS makes it very clear: Europe remains an important market for offshore wind with rising relevance over the next few decades as it moves towards meeting its carbon emission reduction goals and increasing its energy independence. This contrasts sharply with the United States' path following President Trump's executive order on January 20, 2025, withdrawing all areas of the U.S. outer continental shelf from Offshore Wind Leasing. Europe has a long history of using offshore wind as part of its energy mix. The world's first offshore wind farm was completed in Denmark in 1991 by Orsted. The project consisted of 11 turbines with total generation capacity of 5 MW. The European offshore wind industry has grown significantly since then with Europe achieving 35 GW of installed generation by the end of the first half of 2024. Europe has a significant share of the offshore wind industry with 38% of the world's offshore wind capacity, with Germany and the U.K. as the main contributors. The European market is significantly larger than the U.S. offshore wind market with the U.S. Energy Information Administration reporting in December 2024 that there are only 130 MW of operating offshore wind projects and 6.9 GW planned by projects by 2027. Offshore wind represents a key part of Europe's goal to transition to renewable electricity sources and to achieve energy independence. Bloomberg NEF (BNEF) forecasts European wind capacity will reach 40 GW in 2025, increasing to 80 GW by 2030 and 274 GW by 2040, with the U.K., Germany, and the Netherlands contributing the most to growth.

PwrSoC Registration is now OPEN!
news_2025-08-15_2.jpg
Learn more:
pwrsocevents.com
  • Event News
  • 2025-08-11

The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE Power Electronics Society (IEEE PELS) and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The program will feature three plenary speeches delivered by distinguished industry leaders, providing valuable insights into the latest advancements in miniaturized and integrated power conversion and power management technologies. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies.

PCIM Asia Shanghai Conference 2025 programme to explore power electronics in AI and e-mobility
  • Event News
  • 2025-08-07

The PCIM Asia Shanghai Conference, Asia's foremost academic gathering for the power electronics industry, returns to Shanghai this September. The 2025 programme will unite industry leaders, technical experts and academics to explore advanced solutions and future trends, highlighting developments in cutting-edge technologies such as silicon carbide (SiC), gallium nitride (GaN), motor drives and motion control, and more. Debuting at the conference is the new "Dialogue with Speakers" zone, where dedicated booths will provide a setting for more direct and in-depth interactions between speakers and attendees. Held in conjunction with the PCIM Asia Shanghai exhibition, the PCIM Asia Shanghai Conference addresses key industry topics including motion control systems and power supply solutions. The exhibition, in turn, showcases the latest technologies in power electronics components, power conversion, intelligent motion and more. The combined programme brings together leading specialists from the power electronics sector, application fields, and research institutions worldwide to share their knowledge and discuss the future of the industry.

1200 Volt Family of IGTO(t)
news_2025-09-01_15.jpg
Learn more:
pakal-tech.com
  • Product Release
  • 2025-08-05

Pakal Technologies announced the commercial launch of its 1200 Volt revolutionary IGTO(t) power semiconductor. The initial product is a Gen 2 1200 Volt, 40 Amp IGTO(t) and is available in a TO-247 package with co-packed diode. The 1200 V IGTO(t) is a direct drop-in upgrade for conventional IGBTs, using the same drivers and controllers and switching mechanism as a 1200 V IGBT. Independent tests confirm this Gen 2 IGTO(t) delivers up to 40% lower conduction losses at full current and 150°C compared to top-tier IGBTs. With this 1200 V conduction loss breakthrough, the IGTO(t) not only beats the best silicon, it also directly challenges (and in many conditions beats) the conduction loss performance of much more expensive Silicon Carbide (SiC) MOSFETS. The 1200 V IGTO(t) unlocks new levels of energy efficiency and cost savings across EVs, renewable energy, industrial automation and more. "Our Gen 2 1200 V device shows remarkable conduction loss advantages that are especially useful for <20 kHz applications." said Dr. Richard Blanchard, co-founder of Pakal Technologies. "Unlike IGBTs, the IGTO(t) device scales easily to much higher voltages. We expect to maintain and extend our high-current conduction loss advantage all the way to 6,500 V." The IGTO(t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO(t) to address the multibillion-dollar market gap between legacy silicon IGBTs and more expensive SiC products.

Common Mode Choke
news_2025-09-01_11.jpg
Learn more:
schurter.com
  • Product Release
  • 2025-08-05

Schurter launched a family of vertically mountable chokes for PCBs. The current-compensated DKCV-1 chokes use nanocrystalline cores and are designed for currents from 0.5 to 10 A. They are suited for EMI suppression in industrial, medical, and test equipment up to 300 VAC/450 VDC. The DKCV-1 chokes can be mounted directly on the PCB with a vertical choke arrangement. All variants of the DKCV-1 family are ENEC, cUR and UR approved and have the same footprint on the PCB. Typical applications include switching power supplies, industrial, medical, laboratory and test equipment.

Ultra-Fast Current Shunt Series
news_2025-09-01_8.jpg
Learn more:
pmk.de
  • Product Release
  • 2025-08-05

PMK launched its UFCS devices (Ultra-Fast Current Shunts), aiming to set a new industry standard for current measurement in high-performance power electronics. The reason why it is considered to set a standard is described by PMP as follows: "Designed to meet the demands of next-generation systems, UFCS shunts combine >1 GHz bandwidth with ultra-low insertion inductance (<200 pH), enabling unparalleled signal fidelity in the analysis of ultra-fast transient currents." The UFCS shunts are suited for applications involving GaN and SiC power semiconductors, where accurate switching loss measurements and pulse current analysis are critical. Their non-inductive frequency response ensures clean and reliable data acquisition, even in the demanding wide-bandgap environments. For measurements requiring high common-mode rejection, the UFCS can be paired with PMK's FireFly® optically isolated voltage probes. Alternatively, they can be connected directly to any 5 Ω input measuring device for general-purpose use. The first models available in the UFCS series include 11 mΩ, 24 mΩ, and 52 mΩ versions, covering a wide range of applications. 1 mΩ and 5 mΩ versions are said to follow shortly.

Gaining In-Depth High Voltage Relay Switching Expertise
news_2025-09-01_3.jpg
Learn more:
pickeringrelay.com
  • Industry News
  • 2025-08-03

Pickering Electronics has established its High Voltage Reed Relay Resource Center, an online reference library of technical information for engineers building HV switching systems or looking to develop their knowledge. This digital reference library collects together deep technical expertise and video, application guide and case study resources, authored by subject matter experts from the company's Centre of Excellence for high voltage switching. Pickering has been active in high voltage reed relays for more than half a century, introducing its first HV reed relays in 1970. Pickering's High Voltage Reed Relay Resource Center contains information engineers need to know about high voltage reed relays, including how they work, what to look for when selecting a device, and how to use it to ensure the best performance in your HV switching application. Topics include the construction of a high-voltage reed relay, including the switch blades & gap, and magnetic screening but also AC and DC considerations as well as hot and cold switching. Furthermore, it deals with loads and in-rush currents, test methods and failure modes, including vacuum failure, plating material damage, and breakdown & arcing. On top of the Resource Center answers the question, why reed relays may be a better option for HV applications than competing technologies, such as electromechanical relays (EMRs) & solid-state relays (SSRs).

Power Modules for higher Currents
news_2025-08-15_9.jpg
Learn more:
we-online.com
  • Product Release
  • 2025-07-30

Würth Elektronik has expanded its MagI³C-VDLM power module series with two new models. With output currents of 4 A and 5 A respectively, they further enhance the performance of the existing portfolio of compact DC/DC power supply modules. The modules are designed for input voltages from 4 to 36 V and come in a space-saving LGA-26 package (11 × 6 × 3 mm³). They provide an output voltage from 1 to 6 V and, like all power modules in the MagI³C-VDLM series, integrate the essential components for a DC/DC power supply in its package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power modules are claimed to "maintain high efficiency across the entire output current range by automatically switching between operating modes based on load requirements". So, they contribute to a minimal output ripple, which is needed for precise and interference-sensitive applications. Typical applications include point-of-load DC/DC converters, industrial, medical, test and measurement equipment, or for supplying power to DSPs, FPGAs, MCUs, MPUs, and interfaces. The MagI³C-VDLM modules achieve peak efficiencies of up to 96 percent and impress with their EMC performance in accordance with EN55032 Class B / CISPR-32. Additional features include selectable switching frequencies, automatic PFM/PWM transition, and a sync function for synchronizing to individual clock frequencies.

Webinar: How to Test GaN and SiC MOSFET and IGBT Devices
news_2025-08-15_5.jpg
Learn more:
teledynelecroy.com
  • Event News
  • 2025-07-29

Join Teledyne LeCroy to learn more about how to test and qualify GaN MOSFETs, SIC MOSFETs and Si IGBTs using the double-pulse test circuit and high voltage isolated probes. Learn how you can use your benchtop test instruments to effectively (and safely) analyse your circuits in a qualitative and quantitative manner.

Gate driver photocouplers enhance MOSFETs and IGBTs switching efficiency
  • Product Release
  • 2025-07-29

Toshiba Electronics Europe introduced gate driver photocouplers to control 1 A and 6 A class gate drive currents for small- to medium-capacity MOSFET and IGBT gate drives. The TLP579xH series is suitable for driving SiC MOSFETs and IGBTs in green energy and factory automation applications, including industrial photovoltaic (PV) inverters, uninterruptible power supplies (UPSs), and electric vehicle (EV) charging stations, which operate in harsh thermal environments. All three devices in the TLP579xH series are designed to drive small to medium capacity power devices as well as IGBTs. The TLP5791H has a performance of -1.0/+1.0 A for peak high-level/low-level output current (IOLH/IOHL), with an under voltage lock out (UVLO) threshold voltage (VUVLO+) of 9.5 V (max.), a UVLO threshold voltage (VUVLO-) of 7.5 V (min.), and a UVLO hysteresis voltage (VUVLOHYS) of 0.5 V (typ.). With the TLP5794H, the peak output current spans from -6.0/+4.0 A for IOLH/IOHL, with a Vsub>UVLO+ of 13.5 V (max.), a VUVLO- of 9.5 V (min.), and VUVLOHYS of 1.5 V (typ.). The TLP5795H is capable of -4.5/+5.3 A for peak high-level/low-level output current (IOLH/IOHL), with VUVLO+ of 13.5 V (max.), a VUVLO- of 11.1 V (min.), and VUVLOHYS of 1.0 V (typ.). The TLP579xH series is a rail-to-rail output device that enables switching characteristics with less voltage drop from the power supply voltage. It operates within a temperature range of -40 °C to +125 °C and is housed in a SO6L package, featuring a minimum creepage distance of 8.0 mm and an isolation voltage of 5000 VRMS.

1200 V MOSFETs in a Q-DPAK Package
news_2025-08-15_10.jpg
Learn more:
infineon.com
  • Product Release
  • 2025-07-29

Infineon Technologies has launched the CoolSiC™ MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package. These devices deliver enhanced thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers. The CoolSiC 1200 V G2 technology enables up to 25 percent lower switching losses for equivalent RDS(on) devices, thereby increasing system efficiency by up to 0.1 %. Utilizing Infineon's .XT die attach interconnection technology, the G2 devices achieve more than 15 % lower thermal resistance and an 11 % reduction in MOSFET temperature compared to G1 family products. The RDS(on) values, range from 4 mΩ to 78 mΩ, while the technology supports overload operation up to a junction temperature (Tvj) of 200 °C. The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon's broader X-DPAK top-side cooling platform. The standardized package height across all TSC variants – including Q-DPAK and TOLT – is 2.3 mm.

Power Modules
news_2025-09-01_14.jpg
Learn more:
gaia-converter.com
  • Product Release
  • 2025-07-28

The GRD-12A is a reference design board based on the latest generation of GAIA Converter COTS modules, intended to demonstrate the applicability and performances of converters from the MGDD series. It is a multiple outputs board fully configurable and capable of delivering up to 120 W spread over 3 main output channels and 2 auxiliary channels. It is protected in terms of inrush currents, spikes & surges and provides up to 7 outputs between 3.3 V and 52 V while complying with Mil-Standards 1275 (ground vehicle transients), 704 (airborne input voltage) and 461 (EMI/EMC) as well as ABD100 (aeronautical requirements) and DO-160 (civil aviation). At its input the GRD12-A-M – 120W COTS Power Module with a built-in hold-up function accepts 24/28 VDC.

Shielded Power Inductor
news_2025-09-01_13.jpg
Learn more:
bourns.com
  • Product Release
  • 2025-07-28

Bourns introduced its Model SRP1024HMCT shielded power inductor, which is manufactured using a hot press molding process with carbonyl powder. This model is available in a low profile package for the operating temperature range from -40 °C to +125 °C for use e. g. in point-of-load (PoL) converters and data center environments.

TOLT-Packaged 80 V MXT MV MOSFET for E-Scooters and LEVs
news_2025-08-15_11.jpg
Learn more:
magnachip.com
  • Product Release
  • 2025-07-28

Magnachip Semiconductor released an 80 V MXT MV MOSFET, MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. The TOLT-packaged MOSFET delivers a major advancement in thermal management. Unlike conventional TOLL (TO-Leadless) packages that dissipate heat through the bottom, the TOLT package is engineered to release heat directly from the top via a mounted metal heat sink. This structure substantially reduces thermal resistance between the junction and the external environment, making it well-suited for thermally demanding applications, such as e-scooters and LEVs. Simulations and tests conducted by Magnachip demonstrated that this 80 V MV TOLT package solution achieved an average 22 % reduction in junction temperature compared to using standard TOLL packages. This improvement not only extends an application's lifespan, but also enhances the system reliability. Furthermore, the TOLT package enables compact, lightweight application designs thanks to its high power density and efficient thermal flow that. At a VGS of 10 V the RDSon is specified with 1.7 mΩ.

Reliable EMC Protection
news_2025-08-15_13.jpg
Learn more:
schurter.com
  • Product Release
  • 2025-07-25

The extended range of products from Schurter includes high-performance EMC filters, chokes, and pulse transformers for a wide variety of applications – from industrial and medical technology to energy and automation systems. Included are power entry modules with integrated line filters (DG11 with thermal-magnetic circuit breaker), 1- and 3-phase block filters (FPAC RAIL, FMAB NEO, FMBC EP) as well as suppression chokes, magnetically compensated, linear, storage, and linear/saturating types (DKCV-1, DKUH-1), complemented by pulse transformers and customized filters and winding goods. For example, Schurter's single-phase and three-phase EMC filters, with and without IEC power plugs, for PCB or chassis mounting, meet international standards and cover current ranges from 0.5 A to 115 A at voltages up to 520 V. They thus offer reliable protection against conducted interference and contribute significantly to the electromagnetic compatibility of complex systems. The portfolio also includes chokes with SPICE simulation models, which enable precise circuit design even in the early development phase. For control cabinet applications, Schurter offers DIN rail components.

Shielded Power Inductor Series
news_2025-08-15_14.jpg
Learn more:
bourns.com
  • Product Release
  • 2025-07-24

Bourns announced its SRP4020T series shielded power inductors. This series features a carbonyl powder core with "excellent thermal stability and magnetic performance", making it suitable for demanding environments. Its shielded construction suppresses magnetic interference and enhances Electromagnetic Compatibility (EMC). Offered in a (4.45 x 4.0 mm²), low-profile (1.8 mm) package, the SRP4020T Series supports operating temperatures up to +150 °C. The inductance range for this series is from 0.47 to 10 µH.

Large-size Ferrite Cores with different Shapes
  • Product Release
  • 2025-07-24

TDK Corporation added large-size ferrite cores with different core shapes. These are used in a range of industrial applications such as motor drives, EV charging stations, various railway/traction applications, power transformers, welding, medical, uninterruptible power supplies (UPS), solar inverters, and other renewable energy applications. These cores allow for optimizing magnetic design for efficiency and thermal performance. The standardized large-size core program contains E, U, I, PM, and PQ cores in the N27, N87, N88, N92, N95, and N97 power materials. Accessories like coil former and mounting hardware are available.

Company Location in South Africa added
news_2025-08-01_6.jpg
Learn more:
we-online.com
  • Industry News
  • 2025-07-24

Another Würth Elektronik branch opened in Brackenfell, Western Cape, South Africa. The location operates under the name Wurth Electronics South Africa (Pty.) Ltd and will serve local customers, but will also be responsible for the markets of Botswana, Mauritius, Namibia, Tanzania and Zambia. Ahmet Çakir, who also heads the branch in Turkey, will take over the management of the new location, under the leadership of Rob Sperring, Vice President for Southern Europe, Middle East and Africa. The Wurth Electronics South Africa (Pty.) Ltd team currently consists of six employees. However, it will soon be expanded. The official opening ceremony for the new location will take place in early 2026. Four EMC seminars held by Würth Elektronik in South Africa's two largest cities, Cape Town and Johannesburg, have already been completed.

Collaboration with SiC-based PHEV Platform expanded
news_2025-09-01_4.jpg
Learn more:
onsemi.com
  • Industry News
  • 2025-07-24

onsemi announced an expanded collaboration with Schaeffler through a new design win using onsemi's next-generation EliteSiC product line of silicon carbide MOSFETs. The onsemi solution will power the Schaeffler traction inverter for a leading global automaker's plug-in hybrid electric vehicle (PHEV) platform. The semiconductor company claims that "this silicon carbide-based solution offers the lowest on-state resistance to provide highest peak power compared to other SiC solutions in its class". This next step builds on the existing long-term collaboration between onsemi and Schaeffler (formerly Vitesco Technologies), extending the companies' multi-year collaboration in electric mobility solutions.

Simplifying Reverse Battery Polarity and Overvoltage Protection in Automotive Architectures
news_2025-08-15_17.jpg
Learn more:
diodes.com
  • Product Release
  • 2025-07-23

Diodes Incorporated introduced the AP74502Q and AP74502HQ automotive-compliant 80 V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications include ADAS, body control modules, infotainment systems, exterior lighting, and USB charging ports. They also include a load disconnect function in case of overvoltage and undervoltage events, while they are suitable for all 12 V, 24 V and 48 V systems. The AP74502Q and AP74502HQ controllers also support input voltages as low as 3.2 V for operation even during severe cold crank conditions. Both devices share a peak gate turn-off sink current of 2.3 A, enabling rapid turn-off of the external N-channel MOSFETs when required, for example, during overvoltage or undervoltage events. When the charge pump is enabled, the operating quiescent current is 62 µA, and 1 &mirco;A in disabled mode. The AP74502Q features a peak gate source current, typically 60 µA, which provides a smooth start-up with inherent inrush current control. Both, AP74502Q and AP74502HQ are available in the industry-standard SOT28 package with an operating temperature range from -40 °C to +125 °C.

Power MOSFETs in specific Package
  • Product Release
  • 2025-07-20

Toshiba Electronics Europe launched two N-channel power MOSFETs, the 80 V TPM1R908QM and the 150 V TPM7R10CQ5. These latest offerings use Toshiba's SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations. This SOP Advance(E) package is said to "mark a substantial improvement over Toshiba's existing SOP Advance(N) package, reducing package resistance by approximately 65 % and thermal resistance by approximately 15 %". The 80 V TPM1R908QM exhibits a reduction in drain-source on-resistance of approximately 21 % and channel-case thermal resistance of approximately 15 % when compared to Toshiba's existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150 V TPM7R10CQ5 achieves approximately 21% lower RDS(ON) and approximately 15% lower Rth(ch-c) than Toshiba's existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification. Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.

Professorship to Accelerate Wide Bandgap Semiconductor Research
news_2025-08-01_2.JPG
Learn more:
nexperia.com
  • Industry News
  • 2025-07-18

Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices. In his inaugural lecture, titled "Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future," Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon. The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.

Two-Component Thermal Gap Filler and CIP Material
news_2025-08-01_17.jpg
Learn more:
ph.parker.com
  • Product Release
  • 2025-07-17

The Chomerics Division of Parker Hannifin Corporation introduced a two-component (2k) dispensable thermal gap filler and cure-in-place (CIP) material offering 3.5 W/m-K thermal conductivity. THERM-A-GAP™ CIP 35E provides an alternative to hard-curing dispensable materials and an improvement over application methods associated with thermal gap pads. After curing, THERM-A-GAP CIP 35E serves as a low-hardness (50 Shore 00) gap pad that conforms to irregular shapes and maintains effective contact without transmitting compressive forces to adjacent electronics. Its ability to cure into complex geometries is suited for the cooling of multi-height components on a printed circuit board (PCB) without the expense of a moulded sheet. The product also offers vibration damping attributes, while the dielectric strength is 8 kVAC/mm (ASTM D149 test method) and the volume resistivity is 1013 Ωcm (ASTM D257). At 1000 kHz its dielectric constant is specified 8.0 dielectric (ASTM D150); and the dissipation factor at 1,000 kHz is 0.009 (Chomerics CHO-TM-TP13).

Partnership on Silicon Carbide Solutions for Power Management
news_2025-08-01_4.jpg
Learn more:
microchip.com
  • Industry News
  • 2025-07-17

Microchip Technology announced that under a new partnership agreement with Delta Electronics the companies will collaborate to use Microchip’s mSiC™ products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future. Delta intends to leverage Microchip’s experience and technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure. This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support including technical training as well as insight into R&D activities and early access to product samples.

150 V and 200 V MOSFETs “with industry-leading Figures of Merit”
news_2025-08-01_11.jpg
Learn more:
idealsemi.com
  • Product Release
  • 2025-07-17

iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. SuperQ is said to be “the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices”. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices while operation at up to 175 °C junction temperature. The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 mΩ MOSFET. It is available immediately in a 5 x 6 mm2 PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability. The 200 V family includes the iS20M6R1S1T, a 6.1 mΩ MOSFET in a 11.5 x 9.7 mm2 TOLL package. This has an RDSon of 6.1 mΩ, which is claimed to be “10% lower than the current industry leader and 36% lower than the next best competitor”. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages. 250V, 300 V and 400 V MOSFET platforms are promised to be coming soon.

Bipolar Junction Transistors in clip-bonded FlatPower Packages
news_2025-08-15_15.jpg
Learn more:
nexperia.com
  • Product Release
  • 2025-07-16

Nexperia expanded its bipolar junction transistor (BJTs) portfolio by introducing the MJPE-series with 12 MJD-style BJTs in clip-bonded FlatPower (CFP15B) packaging. Compared to traditional DPAK-packaged MJD transistors, MJPE-parts in CFP15B deliver significant board space savings and cost advantages without compromising performance. Six of these devices are automotive-qualified (e.g. MJPE31C-Q) and six industrial-grade types (e.g. MJPE44H11), with VCEO ratings of 50 V, 80 V, and 100 V, and collector currents of 2 A, 3 A, and 8 A. Both NPN and PNP variants are available. Used in diverse applications such as power supplies for battery management systems, on-board chargers in electric vehicles, and backlighting for video displays, the CFP15B-packaged BJTs maintain equivalent thermal performance (up to 175 °C operation for automotive applications) while offering a 53% smaller soldering footprint. Furthermore, the clip technology of the CFP15B package supports specific mechanical robustness while also enhancing the electrical and thermal performance of these devices.

30 Years of Openair-Plasma Technology
news_2025-08-01_3.jpg
Learn more:
plasmatreat.com
  • Industry News
  • 2025-07-16

In early July Plasmatreat celebrated the 30th anniversary of the patent application for its Openair-Plasma technology with its Technology Days 2025 at the headquarters in Steinhagen, Germany. Due to its process stability, efficiency, environmental friendliness, and ease of integration into production environments, the Openair-Plasma technology has changed numerous industrial processes worldwide. More than 200 guests and 16 industry partners joined the Plasmatreat team for the celebration. This plasma technology is used to give materials special properties for further processing including ultra-fine cleaning, activation, reduction, and coatings for a wide range of industrial applications. Plasmatreat technology is currently used in more than 100 automotive and battery production applications. E. g. PlasmaPlus PT-Bond technology serves as an environmentally friendly bonding agent that is often used to bond different materials in a stable, weather-resistant way. Eight interactive workshops complemented the event. For example, the workshop "REDOX effect: Reduction to High-Performance Coatings” showed how oxidized and contaminated metal surfaces are cleaned in the semiconductor industry to meet the strictest standards for manufacturing electronic components. Plasma systems and reduction were also demonstrated live.

TVS Diodes cut Clamping Voltage
news_2025-08-01_18.jpg
Learn more:
littelfuse.com
  • Product Release
  • 2025-07-15

Littelfuse launched the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. This series incorporates foldback technology, which delivers up to 15% lower clamping voltage (VC) compared to traditional solutions, while maintaining Breakdown Voltage (VBR) above the Reverse Standoff Voltage (VR). It is a drop-in replacement to legacy 5.0SMDJ series with the same DO-214AB (SMC) footprint. These devices protect DC power lines across a variety of demanding applications, including Power over Ethernet (PoE) systems, AI and data center servers, ICT equipment power supplies and industrial DC power distribution.

1 W Current Sense Chip Resistor Series
news_2025-08-01_13.png
Learn more:
seielect.com
  • Product Release
  • 2025-07-14

Stackpole Electronics expanded the CSSH Series of current sense chip resistors with a 0805 version for high power density applications. This component is designed to be used in power modules, frequency converters, battery management systems, as well as automotive and EV controls. The CSSH0805 delivers 1 W power handling in a 0805 footprint. With resistance values as low as 0.5 milliohm and TCR from 50 to 100 ppm, it matches the performance of larger 1206 and 2010 resistors.


More NewsTeaserNewsIDNewsSectionTitleTextAnnouncedAnnouncedMMMPicturePicturePathWebLinkWebLinkText
DC Power AnalyzerThe IT2705 DC Power Analyzer is a highly integrate...12583Product ReleaseDC Power AnalyzerThe IT2705 DC Power Analyzer is a highly integrated modular DC power analyzer designed for dynamic power consumption measurement, battery simulation, and power characterization. It combines DC power, electronic loads and arbitrary waveform generator with an intuitive GUI, supports Oscilloscope Sampling and Data Logging function, allowing for the creation of complex testing without the need for secondary development. Four current ranges with seamless auto-ranging enable accurate analysis of transient current changes from low-power sleep mode to active operation. Oscilloscope sampling rate up to 200 kHz ensures precise capture of microsecond-level parameter variations. It can be applied for testing IoT devices, chips, automotive electronics, smart wearable devices,etc, helping engineers deeply analyze dynamic waveforms, instant responses, and key electrical characteristics, improving testing efficiency and accuracy.10.10.2025 16:30:00Octnews_2025-10-15_20.png\images\news_2025-10-15_20.pnghttps://www.itechate.com/en/news/IT2705.htmlitechate.com
PwrSoC 2025 – Global Experts Discussed Miniaturization of Power ConversionThe 9th International Workshop on Power Supply on ...12572Event NewsPwrSoC 2025 – Global Experts Discussed Miniaturization of Power ConversionThe 9th International Workshop on Power Supply on Chip (PwrSoC) has just concluded. Held from September 24 to 26, 2025, in Seoul, South Korea, this year’s workshop marked another significant milestone in the field of integrated power solutions. Over 213 leading researchers and industry professionals from around the world gathered to share insights and advances in the miniaturization and integration of power conversion and power management at the chip, package, and module level. The workshop featured three outstanding plenary talks from industry leaders, offering deep insights into the latest developments in miniaturized and integrated power conversion and power management technologies. Following PwrSoC’s signature single-track format, the workshop presented high-impact invited presentations and an engaging poster session. The technical program covered a wide range of topics, including Systems & Applications, Integrated Magnetics, Topologies & Control, Wide Bandgap Integration, System-Integrated Packaging & Manufacturing, Integrated Capacitors and Energy Storage, and Granular Power Supply.10.10.2025 13:00:00Octnews_2025-10-15_8.jpg\images\news_2025-10-15_8.jpghttps://pwrsocevents.com/pwrsocevents.com
Christian Felgemacher appointed Director Application EngineeringROHM Semiconductor is pleased to announce the appo...12565PeopleChristian Felgemacher appointed Director Application EngineeringROHM Semiconductor is pleased to announce the appointment of Dr. Christian Felgemacher as Director Application Engineering. Since October 1st, he has been responsible for both the operational coordination of technical customer support and the strategic direction of ROHM’s application engineering activities in Europe. Since joining ROHM in 2017, Dr. Felgemacher has contributed significantly to the establishment of the Application and Technical Solution Center (ATSC) - with the set-up of the company’s Power Lab and the development of customer-oriented solutions for ROHM’s European customers. In his previous role as Senior Department Manager Application Engineering, he already led the Technical Consulting and Customer Support division with great commitment and promoted conceptual cooperation with important partners from industry and university research. His leadership role was crucial to the expansion of ROHM’s activities in the automotive, industrial, and energy sectors - particularly through initiatives related to SiC technologies and inverter development.09.10.2025 06:00:00Octnews_2025-10-15_1.jpg\images\news_2025-10-15_1.jpghttps://www.rohm.com/news-detail?news-title=2025-10-09_news&defaultGroupId=falserohm.com
300 mm GaN Program launchedImec welcomes AIXTRON, GlobalFoundries, KLA Corpor...12567Industry News300 mm GaN Program launchedImec welcomes AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco as first partners in its 300 mm gallium-nitride open innovation program track for low- and high-voltage power electronics applications. This program track, part of Imec’s industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300 mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows. The use of 300 mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs. As part of the 300 mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100 V and beyond), using 300 mm Si(111) as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted. For 650 V and above, developments will utilize 300 mm semi-spec and CMOS-compatible QST-&reg; engineered substrates (a material with poly-crystalline AlN core). During the developments, control over the bow of the 300 mm wafers, and their mechanical strength are prime concerns. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025.06.10.2025 08:00:00Octnews_2025-10-15_3.jpg\images\news_2025-10-15_3.jpghttps://www.imec-int.com/en/press/imec-launches-300mm-gan-program-to-develop-power-devicesimec-int.com
40 W DC/DC Converters for demanding space-constrained ApplicationsXP Power launched the BCT40T series of 40 W DC/DC ...12582Product Release40 W DC/DC Converters for demanding space-constrained ApplicationsXP Power launched the BCT40T series of 40 W DC/DC converters, housed in a 1" &times; 1" (25.4 mm &times; 25.4 mm) package designed for PCB mounting. This series is suited for industrial technology, ITE, and communications applications where space is a critical constraint; it is specifically engineered for sectors such as test & measurement, robotics, process control, analytical instruments, and communications equipment. It features a 4:1 input voltage range and operates with an efficiency of up to 89 %. Models are available with nominal 24 V<sub>DC</sub> inputs (ranging from 9.0 V to 36.0 V<sub>DC</sub>) and 48 V<sub>DC</sub> inputs (ranging from 18.0 V to 75.0 V<sub>DC</sub>). The BCT40T offers single regulated outputs ranging from 3.3 V to 24 V<sub>DC</sub>, as well as dual regulated outputs at &plusmn;12 V<sub>DC</sub> and &plusmn;15 V<sub>DC</sub>. Furthermore, the single-output models offer the flexibility of &plusmn;10% output voltage adjustment via an external trim resistor, enabling specific voltage requirements. Protection features include 2kV<sub>DC</sub> isolation between input and output, continuous short-circuit protection with auto-recovery, and overload protection typically set between 130 % and 180 %. It also incorporates overtemperature protection (at 115 °C case temperature), under-voltage lockout (UVLO), and overvoltage protection via a Zener diode clamp. The series holds worldwide safety approvals, meeting IEC/UL/EN62368-1 standards, as well as applicable CE and UKCA directives. It also complies with EN55032 Class A/B for conducted and radiated emissions, and EN61000-4-x for immunity. With a 3-year warranty, the BCT40T series stands as a reliable and high-performance solution for power delivery.03.10.2025 15:30:00Octnews_2025-10-15_19.jpg\images\news_2025-10-15_19.jpghttps://www.xppower.com/resources/press-releases/40W-compact-DC-DC-convertersxppower.com
Innovation Day showcases technical InnovationsThe dataTec Innovation Day, held on September 25 i...12571Industry NewsInnovation Day showcases technical InnovationsThe dataTec Innovation Day, held on September 25 in Stuttgart by the specialist distributor, brought together 216 participants who experienced the latest innovations in test and measurement technology. The event’s name spoke for itself: the selected partner companies presented cutting-edge solutions that set new standards. The dataTec Innovation Day agenda featured live demonstrations, expert talks, and workshops on four key areas: EMPT (Electronic Measurement and Testing Technology), Power (AC/DC power supplies & data loggers), High-End Measurement Technology, and Modular Measurement Technology. Ample networking opportunities rounded off the event. Markus Kohler, Chief Sales Officer of dataTec, emphasized the responsibility of distribution partners in the field of measurement and testing technology. "We are observing three major developments: the increasing automation of measurement and testing tasks, the growing use of artificial intelligence in evaluation, and a clear trend toward more efficient and sustainable solutions. As a specialized distributor with 40 years of experience, our mission is to provide engineers and technicians with the right tools, and to offer practical support through consulting, application expertise, and dedicated service."01.10.2025 12:00:00Octnews_2025-10-15_7.jpg\images\news_2025-10-15_7.jpghttps://www.datatec.eu/de/en/wiki/first-datatec-innovation-day-showcases-technical-innovationsdatatec.eu
Industrial Power Supply Series now also with 600 W and 1000 W ModelsTDK-Lambda has expanded its GUS series of single-o...12579Product ReleaseIndustrial Power Supply Series now also with 600 W and 1000 W ModelsTDK-Lambda has expanded its GUS series of single-output general-purpose power supplies with 600 W and 1000 W models. Designed for applications such as light industrial equipment, factory automation, semiconductor fabrication, ATE test systems, LED lighting, and broadcast, the new models provide output voltages of 12, 24, 36, and 48 V, achieving efficiencies of up to 95 % with a load of 30 to 100 %. Both units feature an internal cooling fan with an acoustic noise, which is typically less than 45 dBA. The GUS600 model measures 101.6 &times; 41 &times; 152.4 mm3 (W x H x D), while the GUS1000 has a compact package size of 101.6 &times; 41 &times; 177.8 mm3. The models feature an operating temperature range of -20 to +70 °C and the output voltage can be adjusted for non-standard system voltages while output remote on/off is available as an option. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS series also meets IEC 62477-1 (OVC III) and has an input-to-output isolation of 2,000 V<sub>AC</sub>, input-to-ground of 3,000 V<sub>AC</sub>, and an output-to-ground of 500 V<sub>AC</sub>. The nominal input voltage is 100 – 240 V.30.09.2025 12:30:00Sepnews_2025-10-15_16.jpg\images\news_2025-10-15_16.jpghttps://www.emea.lambda.tdk.com/uk/news/article/21117lambda.tdk.com
Wide Input DC/DC Range delivers 10 W in DIP-24 PackageThe REC10K-RW series of encapsulated DC/DCs conver...12578Product ReleaseWide Input DC/DC Range delivers 10 W in DIP-24 PackageThe REC10K-RW series of encapsulated DC/DCs converters recently launched by Recom features a 4:1 input range (9-36 V and 18-75 VDC) and a selection of regulated single and dual outputs covering all common requirements. A full 10 W is available up to at least 60 °C ambient, deriving to 100 °C. Output trim and ON/OFF control features are included. Isolation is 4 kVDC for 1 minute (functional), and the parts are safety-certified to IEC/EN/UL/CSA62368-1. Full protection against input under-voltage, over-temperature, and output short-circuits, over-current, and over-voltage are included.30.09.2025 11:30:00Sepnews_2025-10-15_15.jpg\images\news_2025-10-15_15.jpghttps://recom-power.com/en/rec-n-wide-input-dc!sdc-range-delivers-10w-in-dip24-package-438.html?5recom-power.com
Application-specific MOSFETs provide enhanced dynamic Current SharingNexperia has added some devices to its family of a...12576Product ReleaseApplication-specific MOSFETs provide enhanced dynamic Current SharingNexperia has added some devices to its family of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors. When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest V<sub>GS(th)</sub> will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications. PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs offer a 50 % lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a V<sub>GS(th)</sub> window that is up to 50 % lower (0.6 V min-to-max). Combined with the R<sub>DS(on)</sub> of 1.9 m&#8486; or 2.3 m&#8486; this helps to provide high efficiency in power switching applications. These ASFET devices are available in the rugged, space-efficient 8 mm &times; 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.30.09.2025 09:30:00Sepnews_2025-10-15_13.jpg\images\news_2025-10-15_13.jpghttps://www.nexperia.com/about/news-events/press-releases/nexperia-application-specific-mosfets-provide-enhanced-dynamic-current-sharing-for-high-power-industrial-applicationsnexperia.com
Passive Components: Plant Opening in ChinaIsabellenhütte Heusler has opened its first plant ...12568Industry NewsPassive Components: Plant Opening in ChinaIsabellenhütte Heusler has opened its first plant in China – in Jintan (Changzhou). The company hosted a grand opening ceremony attended by key stakeholders, including customers, suppliers, service providers, local authorities, and political representatives. Dr. Gero Heusler, member of the advisory board, and the management team – represented by Thilo Gleisberg (CTO) and Dr. Felix Heusler (CFO) – also attended the event and emphasized the strategic importance of the new location for the company’s international orientation. With an investment of approximately 18 million Euros and more than 7,000 m&sup2; of production space on three levels, the family-owned company is consistently expanding its presence in the world’s most important industrial and electronics market. The facility targets LEED Silver certification and will operate entirely on renewable electricity. Isabellenhütte has been known for precision and quality since 1482 - today for its precision and power resistors, current measurement systems, and high-quality alloys. From the outset, the plant has focused on efficient, resource-saving processes and building local expertise. Once in regular operation, over 100 skilled jobs will be created; the first 25 employees have already started work. There are also plans to collaborate with universities and research institutions in the region.29.09.2025 09:00:00Sepnews_2025-10-15_4.jpg\images\news_2025-10-15_4.jpghttps://www.isabellenhuette.com/news/factory-opening-chinaisabellenhuette.com
Tailored for Industrial Switching ApplicationsInfineon Technologies launched the OptiMOS&trade; ...12574Product ReleaseTailored for Industrial Switching ApplicationsInfineon Technologies launched the OptiMOS&trade; 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Now there are products specifically for high performance switching, motor-drives, or R<sub>DS(ON)</sub>-focused applications. The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies in telecommunications and traditional server applications. There are two technology variants: devices optimized for hard-switching and soft-switching topologies. Compared to the OptiMOS 5 25 V, the new generation achieves up to 20 percent lower R<sub>DS(ON)</sub> and up to 25 percent better FOMs, depending on the optimization type. The OptiMOS 7 25 V devices, optimized for switching, are available in source-down PQFN 3.3&times;3.3 packages with bottom and dual-side cooling variants in a center-gate footprint while the OptiMOS 7 40 V motor-drives optimized family includes SuperSO8 (5x6) and PQFN 3.3&times;3.3 packages.26.09.2025 07:30:00Sepnews_2025-10-15_11.png\images\news_2025-10-15_11.pnghttps://www.infineon.com/market-news/2025/INFPSS202509-150infineon.com
Collaboration on SiC Power Electronics Packages to enhance FlexibilityInfineon Technologies and ROHM have signed a Memor...12552Industry NewsCollaboration on SiC Power Electronics Packages to enhance FlexibilityInfineon Technologies and ROHM have signed a Memorandum of Understanding to collaborate on packages for silicon carbide power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs. As part of the agreement, ROHM will adopt Infineon’s top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247. Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and GaN.25.09.2025 13:00:00Sepnews_2025-10-01_8.jpg\images\news_2025-10-01_8.jpghttps://www.infineon.com/press-release/2025/INFXX202509-149infineon.com
100 V N-channel power MOSFETToshiba Electronics has launched the TPH2R70AR5, a...12577Product Release100 V N-channel power MOSFETToshiba Electronics has launched the TPH2R70AR5, a 100 V-rated N-channel power MOSFET fabricated in the company’s U-MOS11-H process. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC/DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. The TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (R<sub>DS(ON)</sub>) has reduced by around 8 % to 2.7 m&ohm; (max.) while the total gate charge (Q<sub>g</sub>) is now 37 % lower at 52 nC (typ.). The R<sub>DS(ON)</sub> &times; Q<sub>g</sub> figure-of-merit (FoM) is therefore improved by 42 %. Housed in the SOP (N) package measuring 5.15 mm &times; 6.1 mm, the TPH2R70AR5 is rated for a maximum drain current (I<sub>D</sub>) of 190 A at an ambient temperature of 25 °C. The device is capable of operating with a channel temperature (T<sub>ch</sub>) up to 175 °C, thereby reducing the need for cooling measures. Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time, and highly accurate G2 SPICE models that accurately reproduce transient characteristics.25.09.2025 10:30:00Sepnews_2025-10-15_14.jpg\images\news_2025-10-15_14.jpghttps://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/09/mosfet-20250925-1.htmltoshiba.semicon-storage.com
ASPICE Capability Level 2 for Next Generation Cell Monitoring System achievedDukosi has achieved Automotive SPICE&reg; (ASPICE)...12553Industry NewsASPICE Capability Level 2 for Next Generation Cell Monitoring System achievedDukosi has achieved Automotive SPICE&reg; (ASPICE) Capability Level 2 for development processes related to its next generation cell monitoring system for automotive and electric vehicle (xEV) applications. This important assessment milestone assures compliance with the demanding quality requirements of automotive customers and gives confidence that automotive software and systems are developed with consistent quality, reliability and safety. The intensive assessment was performed by UL Solutions in compliance with ASPICE PAM 4.0 (Process Assessment Model) and in accordance with the ISO/IEC 33002 standard and completed in September 2025. The Automotive Software Process Improvement and Capability Determination (ASPICE) standard, developed by the German Association of the Automotive Industry (VDA), has been established worldwide and is used by leading OEMs and suppliers to evaluate the development processes of software-based systems in and around the vehicle. UL Solutions’ rigorous assessment included Dukosi’s processes across system development, software development, support and project management, and the scope of this assessment went beyond the scope recommended by VDA. Reinforcing the company’s commitment to product safety, Dukosi’s development processes are in full alignment with ASPICE PAM 4.0 and ISO 26262.23.09.2025 14:00:00Sepnews_2025-10-01_9.png\images\news_2025-10-01_9.pnghttps://www.dukosi.com/press-release/dukosi-achieves-aspice-capability-level-2-for-its-next-generation-cell-monitoring-systemdukosi.com
Dispensable Thermal Gel offers Vertical TackinessThe Chomerics Division of Parker Hannifin introduc...12581Product ReleaseDispensable Thermal Gel offers Vertical TackinessThe Chomerics Division of Parker Hannifin introduced its THERM-GAP&trade; GEL 75VT, a dispensable thermal gel offering 7.5 W/m-K typical thermal conductivity. The fully cured product performs reliably in vertical and high-vibration applications, including those that are mission-critical. To ensure its suitability for conducting heat away from electronics to heatsinks or enclosures in demanding operating conditions, Parker Chomerics subjected GEL 75VT to several long-term reliability tests. The product passed automotive vertical slump testing, high-vibration testing and telecommunications thermal material verification processes. With its long-term reliability, THERM-GAP GEL 75VT can meet the requirements of design engineers who need their new electronic device to deliver consistent thermal performance over many years of continuous service. Automotive sensors and devices, telecommunications modules, BESS (battery and energy storage system) modules, industrial electronics, network and IT infrastructure, power electronics, and consumer electronics are all among potential beneficiaries. Only a very low compressive force is necessary to ensure deformation under assembly pressure. Fully RoHS-compliant, important electrical properties of THERM-A-GAP GEL 75VT include: 7.9 kV<sub>AC</sub>/mm dielectric strength (ASTM D149 test method); 1014 &#8486;cm volume resistivity (ASTM D257); 5.2 dielectric constant at 1,000 kHz/0.76 mm thick (ASTM D150); and 0.003 dissipation factor at 1,000 kHz/0.76 mm thick (Chomerics test method).22.09.2025 14:30:00Sepnews_2025-10-15_18.jpg\images\news_2025-10-15_18.jpghttps://ph.parker.com/us/en/product-list/therm-a-gap-gel-75vt-thermally-conductive-gelparker.com
Groundbreaking for EMC LabTDK is building a new EMC laboratory in Regensburg...12550Industry NewsGroundbreaking for EMC LabTDK is building a new EMC laboratory in Regensburg. It will replace the accredited laboratory that has been in existence for more than 60 years at a new location. The facility will offer internal and external customers state-of-the-art capabilities for measuring electromagnetic compatibility (EMC). The groundbreaking ceremony for the new laboratory has now taken place. TDK is investing a double-digit million euro amount in the new building. The new laboratory will have a total area of almost 1,700 square meters, 1,100 square meters of which will be used for the laboratory and measuring stations. A showroom and a large customer area with meeting rooms are also planned. The centerpiece of the laboratory is a new 10-meter semi-anechoic chamber, in which even large vehicles and powerful industrial applications can be measured. It is complemented by a 3-meter full-absorber chamber for RF and radio applications, which is claimed to enable "the fastest measurement methods at the highest frequencies", as well as a compact chamber for measuring automotive components such as control units or onboard chargers. This chamber is equipped with absorbers that are only ten centimeters deep.22.09.2025 11:00:00Sepnews_2025-10-01_6.jpg\images\news_2025-10-01_6.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/groundbreaking-new-emc-lab-regensburg/3629514tdk-electronics.tdk.com
Lift motor developed using Ferrite Magnets – without Rare Earth MaterialsZiehl-Abegg claims to be "the first company worldw...12546Industry NewsLift motor developed using Ferrite Magnets – without Rare Earth MaterialsZiehl-Abegg claims to be "the first company worldwide to develop a high-performance synchronous lift motor that operates entirely without rare earth magnets – without compromising on power output". The new lift motor, which uses ferrite magnets, eliminates the need for critical raw materials such as neodymium and dysprosium, which have traditionally been considered indispensable for high-performance drives due to their power density. These rare earth elements are sourced almost exclusively from one single country. Despite foregoing rare earth high-performance magnets, this motor delivers identical performance – all within the same dimensions. This is a real advancement, particularly for high-torque lift applications where smooth operation and energy efficiency are critical. A patent application has already been filed.19.09.2025 07:00:00Sepnews_2025-10-01_2.jpg\images\news_2025-10-01_2.jpghttps://www.ziehl-abegg.com/en/company/press/press-releases/news-content-detail/lift-motor-developed-using-ferrite-magnetsziehl-abegg.com
Current/OS Foundation joinedDanisense has joined the Current/OS Foundation, a ...12554Industry NewsCurrent/OS Foundation joinedDanisense has joined the Current/OS Foundation, a nonprofit, open partnership dedicated to ensuring reliable and sustainable hybrid AC/DC power distribution in buildings and installations. The aim of the foundation is to promote direct current electrical safety and to enhance energy resilience to ensure reliable access to electricity for all. The reason for joining is that Danisense "firmly believes that a swift and intelligent energy transition is possible through the wider adoption of DC microgrids, which are already proving superior to AC networks in several applications." According to Danisense "joining the Current/OS Foundation was a natural step for us to help shape the future of DC infrastructure."18.09.2025 15:00:00Sepnews_2025-10-01_10.jpg\images\news_2025-10-01_10.jpghttps://danisense.com/danisense.com
100 V MOSFETs deliver low Conduction LossesNexperia launched its AEC-Q101 qualified 100 V MOS...12560Product Release100 V MOSFETs deliver low Conduction LossesNexperia launched its AEC-Q101 qualified 100 V MOSFETs in compact CCPAK1212 (12 mm x 12 mm) copper-clip packaging. According to the company "these devices deliver ultra-low conduction losses with on-resistance as low as 0.99 m&#8486;, and enable safe current above 460 A". This makes them suited for thermally demanding 48 V automotive applications, including on-board chargers (OBC), traction inverters, and battery management systems (BMS). In addition to passenger vehicles, these MOSFETs also benefit 2- and 3-wheel e-mobility, DC/DC converters, and industrial high-current modules, where efficiency and thermal reliability are equally critical. The next-generation 100 V AEC-Q101 trench silicon platform, combined with the thermal performance (R<sub>th(j-b)</sub> = 0.1 K/W) of Nexperia’s proprietary copper-clip CCPAK1212 package, enables this R<sub>DS(on)</sub>. Together, these features provide the critical advantages required in 48 V automotive systems - high current capability, superior power density, and a robust Safe Operating Area (SOA) rating of up to 400 A at 100 V. The devices are available in a choice of inverted top-side cooled (CCPAK1212i) and bottom-side cooled (CCPAK1212) versions.18.09.2025 11:30:00Sepnews_2025-10-01_16.jpg\images\news_2025-10-01_16.jpghttps://www.nexperia.com/about/news-events/press-releases/100-v-mosfets-from-nexperia-deliver-ultra-low-conduction-losses-in-demanding-automotive-applicationsnexperia.com
Manufacturing Partner for Power DevicesiDEAL Semiconductor confirms that its SuperQ&trade...12566Industry NewsManufacturing Partner for Power DevicesiDEAL Semiconductor confirms that its SuperQ&trade; silicon power devices are now in production at Polar Semiconductor, a foundry specializing in high-voltage, power, and sensor technologies. SuperQ uses a patented asymmetrical RESURF structure; it significantly reduces conduction and switching losses – with up to 2.7x lower resistance compared to legacy silicon and cutting switching losses by up to 2.1x versus competing devices. Polar Semiconductor operates a high-volume 200 mm manufacturing facility in Minnesota and is claimed to be "the only majority U.S.-owned foundry with deep expertise in high-voltage and power semiconductors". With a 50-year heritage in automotive production, Polar is IATF 16949 certified and committed to zero-defect manufacturing. iDEAL’s first products – 150 V and 200 V MOSFETs announced in July – are already in production at Polar, with 300 V and 400 V devices to follow. Polar is further expanding to double its manufacturing capacity and invest in next-generation technologies.18.09.2025 07:00:00Sepnews_2025-10-15_2.png\images\news_2025-10-15_2.pnghttps://idealsemi.com/ideal-semiconductor-announces-polar-semiconductor-as-manufacturing-partner-for-superq-power-devices/idealsemi.com
Semiconductor Company appoints President and CEOOmniOn Power has appointed David French as its new...12547PeopleSemiconductor Company appoints President and CEOOmniOn Power has appointed David French as its new President and CEO. French has worked for more than 40 years in the semiconductor and electronics industries. Prior to joining OmniOn, he managed NXP’s Mobile and Computing Business Unit. French has also served as the CEO of Cirrus Logic, where he led the company’s transformation towards mixed-signal audio solutions. In addition, he’s held various senior-level positions at Texas Instruments and Analog Devices. French’s appointment follows the resignation of Jeff Schnitzer in August 2025, the company’s prior President and CEO.17.09.2025 08:00:00Sepnews_2025-10-01_3.png\images\news_2025-10-01_3.pnghttps://www.omnionpower.com/about/news/press-releases/omnion-power-press-release-david-french-named-president-and-ceoomnionpower.com
Duo of Protection Switches that support Type-C EPR 3.1 extended Power LevelsAlpha and Omega Semiconductor announced two Type-C...12562Product ReleaseDuo of Protection Switches that support Type-C EPR 3.1 extended Power LevelsAlpha and Omega Semiconductor announced two Type-C sink and source protection switches to increase the power delivery capability of USB Type-C ports to 240 W, paving the way for Type-C extended power range (EPR) implementations. The AOZ13058DI offers overvoltage/overcurrent protection features suited for 48 V Type-C sinking applications, while the AOZ15953DI provides the additional protection features needed for Type-C sourcing applications. These switches help designers safeguard 48 V Type-C EPR capabilities to enhance reliability and functionality in high-performance and gaming laptops, personal computers, monitors, docking, and other higher-power connected portable devices. The AOZ13058DI features a 20 milliohm resistance and provides a set of features including programmable soft-start, overvoltage, ideal diode reverse-current, short-circuit, overcurrent, overtemperature, and ESD protection. These features also help isolate and protect downstream components from abnormal VBUS voltage and potentially harmful current conditions. Ideal diode fast reverse current protection allows multiple power paths to be connected in parallel without interference. The switch’s integrated positive and negative transient voltage suppression at VIN enhances immunity to voltage spikes meeting IEC safety standards (IEC61000-4-2: &plusmn;8 kV contact, &plusmn;15 kV contact; IEC61000-4-5: 20 A (8/20 &micro;s) on VIN and VOUT). The AOZ13058DI also features a programmable current limit function, permitting its application as a sourcing switch in an EPR 3.1 docking system.16.09.2025 13:30:00Sepnews_2025-10-01_18.jpg\images\news_2025-10-01_18.jpghttps://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-powerful-duo-protection-switches-support-type-c-epr-31aosmd.com
2-in-1 SiC Molded ModuleROHM has developed the "DOT-247," a 2-in-1 SiC mol...12561Product Release2-in-1 SiC Molded ModuleROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), suited for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the "TO-247" package while achieving design flexibility and power density. The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15 % and inductance by approximately 50 % compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration – achieving the same power conversion circuit in approximately half the volume. These products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed – making custom products necessary in many cases when using conventional SiC modules. Therefore, ROHM has developed each of these two topologies into a 2-in-1 module to support various configurations such as NPC circuits and DC/DC converters. Evaluation boards will also be made available.16.09.2025 12:30:00Sepnews_2025-10-01_17.jpg\images\news_2025-10-01_17.jpghttps://www.rohm.com/news-detail?news-title=2025-09-16_news_sic-power-module&defaultGroupId=falserohm.com
LLC Half-Bridge Transformers for isolated Gate Driver Bias SupplyThe HTX8045C Series transformers from Coilcraft bu...12558Product ReleaseLLC Half-Bridge Transformers for isolated Gate Driver Bias SupplyThe HTX8045C Series transformers from Coilcraft build on the proven chip-style construction of the HTX family – an improvement over conventional core and bobbin designs. This surface-mount configuration reduces component size and enhances manufacturing efficiency. With higher isolation voltage compared to the HTX7045C and an interwinding capacitance as low as 0.55 pF, the HTX8045C is particularly well-suited for use in isolated gate driver bias supplies employing the open-loop LLC topology to achieve low EMI noise and high CMTI (Common Mode Transient Immunity). These characteristics make it especially beneficial for high-frequency switches including SiC, GaN and IGBT technologies. The HTX8045C is AEC-Q200-qualified, making it suited for automotive traction inverters and motor controls, automotive on-board chargers (OBC), EV charging stations, battery management systems (BMS), automotive DC/DC converters as well as other automotive and industrial applications.16.09.2025 09:30:00Sepnews_2025-10-01_14.jpg\images\news_2025-10-01_14.jpghttps://www.coilcraft.com/en-us/products/transformers/power-transformers/power-converter-transformers/htx8045c/coilcraft.com
IGBT7 Modules for high Power Density and easier System IntegrationMicrochip announced a family of DualPack 3 (DP3) p...12575Product ReleaseIGBT7 Modules for high Power Density and easier System IntegrationMicrochip announced a family of DualPack 3 (DP3) power modules featuring IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300–900 A. These DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions while reducing power losses by up to 15–20 % compared to IGBT4 devices. During overload temperatures may rise up to 175 °C. They are suited for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm &times; 62 mm &times; 20 mm, provide a second-source option to industry-standard EconoDUAL&trade; packages.16.09.2025 08:30:00Sepnews_2025-10-15_12.jpg\images\news_2025-10-15_12.jpghttps://www.microchip.com/en-us/about/news-releases/products/new-dualpack-3-igbt7-modules-deliver-high-power-densitymicrochip.com
DualPack 3 IGBT7 Modules deliver High Power Density and simplify System IntegrationMicrochip Technology announced a family of DualPac...12556Product ReleaseDualPack 3 IGBT7 Modules deliver High Power Density and simplify System IntegrationMicrochip Technology announced a family of DualPack 3 (DP3) power modules featuring advanced IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300 – 900 A. The DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions. These modules use the latest IGBT7 technology, engineered to reduce power losses by up to 15 – 20 % compared to IGBT4 devices and operate reliably at higher temperatures up to 175 °C during overload. DP3 modules enhance protection and control during high-voltage switching, making them suitable for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm &times; 62 mm &times; 20 mm, enable a frame size jump for increased power output. This type of power packaging eliminates the need for paralleling multiple modules and helps reduce system complexity and Bill of Materials (BOM) costs. Additionally, DP3 modules provide a second-source option to industry-standard EconoDUAL&trade; packages for greater flexibility and supply chain security for customers.16.09.2025 07:30:00Sepnews_2025-10-01_12.jpg\images\news_2025-10-01_12.jpghttps://www.microchip.com/en-us/about/news-releases/products/new-dualpack-3-igbt7-modules-deliver-high-power-densitymicrochip.com
Fast Recovery Power Rectifier AssembliesDean Technology (DTI) extended their their power r...12555Product ReleaseFast Recovery Power Rectifier AssembliesDean Technology (DTI) extended their their power rectifier assembly line, the HRFS5 Series. They join the HRS5 series and HRS10 series of standard recovery power assemblies. The HRFS5 series follows the open frame concept found in the legacy HRS5 and HRS10 products, allowing for better thermal conductivity and are intended for ambient air applications but can also be used in submerged oil environments. It offers a reverse recovery time (TRR) of 75 ns maximum, which is good for switching applications. HRFS5 units offer a maximum repetitive reverse voltage range from 14.4 to 28.8 kV and 5.7 A of average forward current. All products in the HRFS5 series line are capacitor compensated and modular based.16.09.2025 06:30:00Sepnews_2025-10-01_11.png\images\news_2025-10-01_11.pnghttps://www.deantechnology.com/new-line-of-fast-recovery-power-rectifier-assemblies/deantechnology.com
Global Agreement to Distribute High-Energy Density CapacitorsMouser Electronics announces a global distribution...12548Industry NewsGlobal Agreement to Distribute High-Energy Density CapacitorsMouser Electronics announces a global distribution agreement with Quantic Evans, a company which is active in high-energy density capacitors for demanding mission-critical applications. Quantic Evans’ hybrid capacitors, known as EVANSCAPS, serve diverse markets, including aerospace, energy, and communications, where high-reliability, size, weight, and power (SWaP) are crucial. The Quantic Evans HyCap hybrid capacitors, available to order from Mouser, are designed to provide reliable operation in a wide range of harsh environments, including those with shock and vibration conditions. These devices are available in a capacitance range of 68 &micro;F to 2700 &micro;F with a &plusmn;20% tolerance, with a voltage range of 10 V<sub>DC</sub> to 150 V<sub>DC</sub>. The HyCap capacitor series’ robust construction makes them suitable for energy, industrial, space, and defence applications. They are built with patented hybrid wet tantalum technology - featuring a Tantalum Pentoxide anode and a Ruthenium Oxide cathode.15.09.2025 09:00:00Sepnews_2025-10-01_4.jpg\images\news_2025-10-01_4.jpghttps://eu.mouser.com/newsroom/publicrelations-quantic-evans-new-manufacturer-2025final/mouser.com
Cleanroom opening at Malaysian Wafer FabX-FAB celebrated the grand opening of a manufactur...12569Industry NewsCleanroom opening at Malaysian Wafer FabX-FAB celebrated the grand opening of a manufacturing line at its Sarawak facility. The ceremony was officiated by the Prime Minister of Malaysia, YAB Dato’ Seri Anwar Ibrahim, and the Sarawak Premier, YAB Datuk Patinggi Tan Sri Abang Johari Tun Openg. This major expansion – representing a $600 million investment – added 6,000 square meters of cleanroom space and was completed within two years, from groundbreaking to the first production lots. As a result, the site’s monthly wafer start capacity has increased from 30,000 to 40,000, with a key highlight being the more than doubling of capacity for X-FAB’s 180 nm BCD-on-SOI technology (XT018). BCD-on-SOI technology is superior in many aspects when compared to conventional bulk BCD technologies. Key advantages include virtual latch-up free circuits, strong EMC performance (due to complete isolation with buried oxide/DTI) and simplified handling of below ground transients. The XT018 platform features a portfolio of voltage options from 10 V to 375 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options. It is specifically designed for next generation automotive, industrial and medical applications operating in extreme temperature ranges from -40 to 175 °C.12.09.2025 10:00:00Sepnews_2025-10-15_5.jpg\images\news_2025-10-15_5.jpghttps://www.xfab.com/news/details/article/x-fab-opens-new-cleanroom-at-its-malaysian-sitexfab.com
Compact Power Modules for Consumer and Industrial EquipmentMitsubishi Electric has developed a compact versio...12573Product ReleaseCompact Power Modules for Consumer and Industrial EquipmentMitsubishi Electric has developed a compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The Compact DIPIPM series comprises the PSS30SF1F6 (30 A / 600V) and the PSS50SF1F6 (50 A / 600 V). By utilizing reverse-conducting IGBTs (RC-IGBTs), the module’s footprint has been reduced to almost 53 % of that of the company’s conventional Mini DIPIPM Ver.7, enabling more compact inverter substrates in packaged air conditioners and other applications. In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. Despite the smaller product size, the use of high-heat dissipation insulating sheet material suppresses temperature rise at the junction, achieving a current rating of 50 A. An additional interlock function contributes to the simplification of inverter substrate design, but it also simplifies the short-circuit protection design of inverter substrates. By maintaining the same insulation distance between terminals and the heat sink as that of conventional products, replacement of those products is facilitated. Furthermore, the lower limit of the continuous operating temperature is now extended to -40 °C.11.09.2025 06:30:00Sepnews_2025-10-15_10.jpg\images\news_2025-10-15_10.jpghttps://www.mitsubishielectric.com/en/pr/2025/0911/mitsubishielectric.com
500 W integrated Power Supplies for High-Rel ApplicationsGAIA Converter has launched the GRD-50A-M series o...12580Product Release500 W integrated Power Supplies for High-Rel ApplicationsGAIA Converter has launched the GRD-50A-M series of scalable 500 W integrated power supplies for high-reliability markets such as military and aerospace. This family of commercial-off-the-shelf board power supplies, designed for 24 V<sub>DC</sub> and 28 V<sub>DC</sub> input, complies with major military standards, including MIL-STD-1275, MIL-STD-704, and MIL-STD-461. Key specifications and features include a 16-38 V<sub>DC</sub> permanent input voltage with transient voltage protection of up to 100 V<sub>DC</sub>, as well as reverse polarity and overload protection. The power supplies offer a total output power of 500 W with 12 V<sub>DC</sub>, 15 V<sub>DC</sub>, 24 V<sub>DC</sub> or 28 V<sub>DC</sub> output voltage. The GRD-50A-M series features an overall efficiency of 89 %, with full protection for output short circuit (hiccup mode), overvoltage, and overtemperature. The series features 1500 V<sub>DC</sub> primary-secondary isolation and 500 V<sub>DC</sub> chassis ground isolation. Overall board dimensions are 255 &times; 70 &times; 24.25 mm&sup3; and operating temperatures extend from -40 °C to +85 °C base-plate. Furthermore, the GRD-50A-M comes in a range of different configuration options, including board only (/B), coated (/V), and parallel (/P).10.09.2025 13:30:00Sepnews_2025-10-15_17.png\images\news_2025-10-15_17.pnghttps://www.gaia-converter.com/product-overview/power-solutions/gaia-converter.com
Power Supply Unit Reference Design for AI Data Centers and ServersInfineon Technologies has introduced a 12 kW refer...12559Product ReleasePower Supply Unit Reference Design for AI Data Centers and ServersInfineon Technologies has introduced a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials silicon, silicon carbide and gallium nitride. It is aimed at research and development engineers, hardware designers, and developers of power electronics systems. To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC&trade; technology. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformer and Infineon’s CoolGaN&trade; technology. These architectures, combined with the company’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in&sup3;. Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events.10.09.2025 10:30:00Sepnews_2025-10-01_15.jpg\images\news_2025-10-01_15.jpghttps://www.infineon.com/market-news/2025/INFPSS202509-142infineon.com
Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at ScaleWolfspeed announced the commercial launch of its 2...12549Industry NewsCommercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at ScaleWolfspeed announced the commercial launch of its 200 mm SiC materials products. Wolfspeed is also offering 200 mm SiC epitaxy for immediate qualification, which, when paired with the company’s 200 mm bare wafers, delivers high scalability and improved quality, enabling the next generation of high-performance power devices. The improved parametric specifications of the 200 mm SiC bare wafers at 350 µm thickness and "enhanced, industry-leading doping and thickness uniformity of the 200 mm epitaxy" is claimed to enable "device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions across automotive, renewable energy, industrial, and other high-growth applications".10.09.2025 10:00:00Sepnews_2025-10-01_5.png\images\news_2025-10-01_5.pnghttps://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-the-commercial-launch-of-200mm-silicon-carbide-materials-portfolio-unlocking-the-industrys-ability-to-manufacture-at-scale/wolfspeed.com
3 kA TVS Diode in Compact Surface Mount PackageLittelfuse launched the DFNAK3 Series of High-Powe...12563Product Release3 kA TVS Diode in Compact Surface Mount PackageLittelfuse launched the DFNAK3 Series of High-Power TVS Diodes. These surface mount devices deliver 3 kA (8/20 &micro;s) surge current protection - claimed to be the highest available in such a small footprint - making them suited for safeguarding DC-powered systems and Power over Ethernet (PoE) applications in demanding environments. Unlike traditional high-surge TVS diodes that come in bulky axial-leaded or large surface mount packages, the DFNAK3 Series uses a compact DFN package - "making it the smallest 3 kA-rated TVS diode on the market today". It offers a 70 % smaller footprint than overcoated alternatives and is also 70 % lower in height than standard SMD-type coated packages. This enables space-constrained, high-density PCB designs without compromising surge performance or system robustness. Engineered to meet IEC 61000-4-5 Level 4 requirements, the DFNAK3 Series provides an alternative to standard TVS diodes, MOVs, and GDTs. The surface mount configuration also supports cost-effective, automated PCB assembly, reducing overall production complexity.09.09.2025 14:30:00Sepnews_2025-10-01_19.jpg\images\news_2025-10-01_19.jpghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-launches-industrys-smallest-3-ka-tvs-diode-in-compact-surface-mount-packagelittelfuse.com
MoU to develop high-performance GaN-based Inverters for Light EvsInfineon Technologies and Lingji Innovation Techno...12545Industry NewsMoU to develop high-performance GaN-based Inverters for Light EvsInfineon Technologies and Lingji Innovation Technology, a subsidiary of Ninebot, signed a Memorandum of Understanding (MoU) to further drive gallium nitride technology in the area of light electric vehicles (LEV). Infineon provides GaN products supporting Lingji to develop electric two-wheeler inverter systems based on Infineon’s new-generation CoolGaN&trade; G5 power transistors. Specializing in smart control technologies, Lingji will use its algorithms to target improved drivetrain efficiency at higher power density levels and higher switching frequencies. Considering China’s new standard, that e-Scooter’s plastic mass shall not exceed 5.5 % of vehicle mass, GaN became a preferred choice as it can reduce the number of passive components for space optimization. The MoU aims to design GaN motor drive technologies for 48 V – 72 V solutions to provide compatible core components for high-end models and shared mobility scenarios. For consumers, LEVs stand out as an affordable and accessible entry point into electric mobility. Unlike cars, LEVs typically do not rely on extensive charging infrastructure, as removable batteries allow users to charge at home using standard electrical sockets. Industry analyst McKinsey estimates that this market will reach $340 billion by 2030. Both Infineon and Lingji think that LEVs, with their affordability, ease of access, and environmental benefits, "are leading the transition to vehicle electrification around the world".09.09.2025 06:00:00Sepnews_2025-10-01_1.jpg\images\news_2025-10-01_1.jpghttps://www.infineon.com/market-news/2025/INFPSS202509-141infineon.com
Fabless GaN Manufacturer changes CEOWise Integration appointed Ghislain Kaiser as Chie...12551PeopleFabless GaN Manufacturer changes CEOWise Integration appointed Ghislain Kaiser as Chief Executive Officer. Kaiser succeeds CEO and co-founder, Thierry Bouchet, who will continue to serve as Chief Technology Officer and General Manager, leading the worldwide R&D and driving the technological vision. In 2006, Kaiser cofounded Docea Power, a French EDA startup pioneering full-chip, system-level power and thermal modelling, with the vision of addressing the growing power-consumption and thermal challenges in IC and platform design. As CEO, he led the company to domain leadership and its acquisition by Intel in 2015. He then joined Intel, where for the next decade he held senior director roles, most recently overseeing system-simulation engineering and worldwide customer-enablement organization. Those programs tackled critical power, thermal, and performance challenges in designing consumer, data-center, and AI systems. Kaiser began his career at STMicroelectronics, where he held technical and leadership positions across test and product engineering, design, and architecture teams. ‘Wise Integration spun out from CEA Leti in 2020 using the institute’s GaN-on-silicon R&D platform.08.09.2025 12:00:00Sepnews_2025-10-01_7.jpg\images\news_2025-10-01_7.jpghttps://wise-integration.com/wise-integration-appoints-ghislain-kaiser-successful-high-tech-entrepreneur-former-intel-executive-as-ceo-to-lead-global-growth/wise-integration.com
Distribution Agreement for Transformers and CoilsAnglia Components has signed an exclusive agreemen...12570Industry NewsDistribution Agreement for Transformers and CoilsAnglia Components has signed an exclusive agreement for UK and Ireland with Hahn, a German manufacturer of standard and custom transformers and inductive coils. The product range includes among other products parts targeted at switch-mode power supplies, EMC and boiler-ignition. Hahn was one of the first winding goods manufacturers to implement the stringent requirements of DIN ISO 9001:2015 and has optimized its processes and quality management to meet even tougher VDA Volume 6.3 (Automotive Standard) regulations.08.09.2025 11:00:00Sepnews_2025-10-15_6.jpg\images\news_2025-10-15_6.jpghttps://www.anglia-live.com/NewsArticles/NewsArticle.aspx?Article=5989anglia-live.com
High-Efficiency Power ChokesITG Electronics highlights its portfolio of power ...12557Product ReleaseHigh-Efficiency Power ChokesITG Electronics highlights its portfolio of power factor correction (PFC) chokes: the PFC282820 Series, purpose-built for 800 – 5000 W continuous conduction mode PFC boost converter applications in high-wattage industrial and automotive systems. Featuring a 27.5 mm &times; 20 mm footprint with a height of 28.5 mm, the PFC282820 Series helps design engineers to meet demanding power density requirements without sacrificing efficiency. A wider configuration (27.5 mm &times; 28.5 mm) is also available to support higher current handling needs, all within the same 5,000 W power ceiling. Part of ITG’s Cubic Design PFC Choke lineup, the PFC282820 Series utilizes flat wire and a square core to deliver enhanced power density and thermal performance compared to traditional toroidal alternatives. The series is engineered to support the evolving requirements of AC to DC power conversion in next-generation industrial and automotive electronics. The PFC282820 Series supports inductance ranges from 33 – 330 &micro;H, with custom values available upon request. High-current output options can handle up to 46 A, with approximately 50 % roll off for superior performance under load.08.09.2025 08:30:00Sepnews_2025-10-01_13.png\images\news_2025-10-01_13.pnghttps://www.itg-electronics.com/en/category/4itg-electronics.com
3.3 kV SiC MOSFET Lineup and LinecardNoMIS Power Corporation announced the commercial r...12564Product Release3.3 kV SiC MOSFET Lineup and LinecardNoMIS Power Corporation announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080MP330 - a planar device with an on-resistance of 80 m&#8486; (34 A) and "best-in-class figures of merit". Key application areas include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives. The company offers the N3PT080MP330K 3.3 kV SiC MOSFET in TO-247 4L with high voltage creepage notch for industrial environments. This device is complemented by NoMIS Power’s 160 m&#8486; SiC bi-directional switches, giving designers multiple options to precisely match device performance to application requirements. The 3.3 kV lineup will expand later this year with the launch of a 50 m&#8486; (55 A) SiC MOSFET, followed in 2026 by a 25 m&#8486; (109 A) SiC MOSFET. Samples of are available in both bare die (binned by threshold voltage) and discrete package for temperatures up to 175 °C. In energy and infrastructure the devices are suited for battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks, while the main applications in the transportation and marine sector are railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, and ship-to-shore power for ports. In charging and industrial systems the devices enable ultra-fast EV charging stations and large industrial motor drives with power conditioning and processing control.05.09.2025 15:30:00Sepnews_2025-10-01_20.jpg\images\news_2025-10-01_20.jpghttps://nomispower.com/news/nomis-power-expands-sic-portfolio-with-new-3-3-kv-sic-mosfet-lineup-for-medium-voltage-power-electronics-applications/nomispower.com
200 V Family of SuperQ-based MOSFETsiDEAL Semiconductor has announced the first of its...12544Product Release200 V Family of SuperQ-based MOSFETsiDEAL Semiconductor has announced the first of its 200 V family of SuperQ&trade;-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D&sup2;PAK-7L, achieve a maximum R<sub>DS(on)</sub> of just 5.5 m&#8486;. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.04.09.2025 15:30:00Sepnews_2025-09-15_22.jpg\images\news_2025-09-15_22.jpghttps://idealsemi.com/ideal-semiconductor-announces-200-v-family-of-superq-based-mosfets-with-industry-leading-cost-x-performance/idealsemi.com
Three-Phase Sinewave FilterEMIS has announced the release of its TPQS3113 Thr...12541Product ReleaseThree-Phase Sinewave FilterEMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions.04.09.2025 12:30:00Sepnews_2025-09-15_19.jpg\images\news_2025-09-15_19.jpghttps://emisglobal.com/products/power-quality/output-filters/three-phase-sinewave-filter/pqsw/emisglobal.com
SiC MOSFETs Adopted in Inverter BrickROHM and Schaeffler have started mass production o...12523Industry NewsSiC MOSFETs Adopted in Inverter BrickROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.04.09.2025 06:00:00Sepnews_2025-09-15_1.jpg\images\news_2025-09-15_1.jpghttps://www.rohm.com/news-detail?news-title=2025-09-04_news_schaeffler&defaultGroupId=falserohm.com
Expansion of European Distribution Centre and HeadquartersTTI IP&E – Europe has officially begun constructio...12527Industry NewsExpansion of European Distribution Centre and HeadquartersTTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m&sup2; of new warehouse and logistics capacity and 6,000 m&sup2; of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees.03.09.2025 10:00:00Sepnews_2025-09-15_5.jpg\images\news_2025-09-15_5.jpghttps://www.ttieurope.com/content/ttieurope/en.htmlttieurope.com
ECPE Workshop ’Ultra-High-Voltage Power Electronics’The shift to renewables demands a stronger, smarte...12525Event NewsECPE Workshop ’Ultra-High-Voltage Power Electronics’The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy.03.09.2025 08:00:00Sepnews_2025-09-15_3.jpg\images\news_2025-09-15_3.jpghttps://www.ecpe.org/events/workshops-tutorials/all/details/evt/mdl/ed/662/eyJtZjEiOnsibWx1MSI6Inx8fHx8fHwifSwiZWYyIjp7ImVsdTEiOiIxfGx1ZmVkaXRtZWRpYWxpYnJhcnl8TWVkaWFMaWJyYXJ5RXZlbnRMaXN0fE1lZGlhTGlicmFyeXxldmVudExpc3R8Mjg3fDIwMzd8IiwiZXBjOSI6dHJ1ZX0sInJmMyI6eyJyb2FkbWFwTGlzdFVyaSI6Inx8fHx8fHwifSwiYmY0Ijp7ImJsdTEiOiJ8fHx8fHx8In0sImxkNSI6eyJsZHUxIjoifHx8fHx8fCJ9fQ==/?cHash=8d2aa95ac7f652b0a2591b3073861cccecpe.org
Automotive High-Withstand Voltage LDO Linear Regulator ICABLIC launched sales of the S-19230/1 Series, an a...12543Product ReleaseAutomotive High-Withstand Voltage LDO Linear Regulator ICABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0&micro;A, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety.02.09.2025 14:30:00Sepnews_2025-09-15_21.png\images\news_2025-09-15_21.pnghttps://www.ablic.com/en/semicon/news/2025/09/02/s-19230-1/ablic.com
600 W Automotive TVS DiodeLittelfuse announced the launch of the SZSMF6L Ser...12542Product Release600 W Automotive TVS DiodeLittelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required.02.09.2025 13:30:00Sepnews_2025-09-15_20.jpg\images\news_2025-09-15_20.jpghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-adds-600-w-szsmf6l-series-to-automotive-tvs-line-for-high-energy-transient-protectionlittelfuse.com
GaN-on-Si Foundry ServicesX-FAB Silicon Foundries is building on its experti...12524Industry NewsGaN-on-Si Foundry ServicesX-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others.02.09.2025 07:00:00Sepnews_2025-09-15_2.png\images\news_2025-09-15_2.pnghttps://www.xfab.com/news/details/article/x-fab-now-offers-gan-on-si-foundry-servicesxfab.com
New Brand Identity and Tagline: "In Everything, Better"TDK Corporation announces the launch of its new br...12532Industry NewsNew Brand Identity and Tagline: "In Everything, Better"TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create."01.09.2025 15:00:00Sepnews_2025-09-15_10.jpg\images\news_2025-09-15_10.jpghttps://www.tdk.com/en/news_center/press/20250901_01.htmltdk.com
150 V MOSFETs in TOLL, TOLG, and TOLT PackagesInfineon Technologies has expanded its OptiMOS&tra...12538Product Release150 V MOSFETs in TOLL, TOLG, and TOLT PackagesInfineon Technologies has expanded its OptiMOS&trade; 6 portfolio by introducing the Automotive 150 V MOSFET family. These devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest R<sub>DS(on)</sub> available in this class, reaching as low as 2.5 m&#8486;. This enables minimal conduction losses and excellent efficiency. The tight distribution of the gate threshold voltage (V<sub>GS(th)</sub>) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.01.09.2025 09:30:00Sepnews_2025-09-15_16.jpg\images\news_2025-09-15_16.jpghttps://www.infineon.com/market-news/2025/INFATV202509-139infineon.com
40 Watt DC/DC ConverterThe THL 40WI series extends Traco Power’s existing...12536Product Release40 Watt DC/DC ConverterThe THL 40WI series extends Traco Power’s existing DC/DC converter portfolio with 40 Watt, 1&prime; &times; 1&prime; package converters. With the focus on combining cost efficiency and quality this isolated high performance DC/DC converter series is suitable for many different applications. The series comes in an encapsulated, shielded 1 &times; 1&prime; &times; 0.43&prime; metal package and offers integrated remote on/off and trim functions. High efficiency up to 93% enables the converter to operate from –40°C to +65°C without derating. All models have a wide 4:1 input voltage range and precisely regulated, isolated outputs. The series meets the latest IT safety certifications (UL 62368-1) and is suitable for uses in mobile equipment, instrumentation, distributed power architectures in communication and industrial electronics and everywhere where cost efficiency and quality are critical factors.01.09.2025 07:30:00Sepnews_2025-09-15_14.jpg\images\news_2025-09-15_14.jpghttps://www.tracopower.com/int/thl-40witracopower.com
Strategic Distribution Partnership to Expand Presence Across APACLotus Microsystems and EDOM Technology jointly ann...12528Industry NewsStrategic Distribution Partnership to Expand Presence Across APACLotus Microsystems and EDOM Technology jointly announced the signing of a strategic distribution agreement for the Asia-Pacific region. This collaboration combines Lotus Microsystems’ power management solutions with EDOM Technology’s extensive distribution network, strong field application engineering (FAE) force, and deep market expertise. The partnership is designed to accelerate customer adoption, deliver superior technical support, and strengthen the presence of both companies across the fast-growing APAC markets. Power and thermal management are crucial aspects of electronic design, especially in the rapidly developing computing, networking, and IoT markets. Effective thermal management ensures that devices operate within a safe temperature range, optimizing performance and extending their operational life. Lotus Microsystems’ work on high-efficiency power modules supports more sustainable computing by reducing energy losses and improving overall power usage effectiveness. "We are delighted to partner with EDOM Technology, a recognized leader in distribution across Asia. This agreement marks an important step in our global expansion, enabling Lotus Microsystems to better serve customers in key APAC markets with the strong support and capabilities that EDOM provides."said Hans Hasselby-Andersen, CEO of Lotus Microsystems.29.08.2025 11:00:00Augnews_2025-09-15_6.jpg\images\news_2025-09-15_6.jpghttps://www.lotus-microsystems.com/lotus-microsystems.com
CAN FD Transceiver Achieves Toyota VeLIO CertificationNOVOSENSE Microelectronics recently announced that...12539Product ReleaseCAN FD Transceiver Achieves Toyota VeLIO CertificationNOVOSENSE Microelectronics recently announced that its automotive-grade CAN FD transceiver, the NCA1044-Q1, has successfully passed Toyota’s VeLIO (Vehicle LAN Interoperability and Optimization) certification. Prior to this, the device had already obtained the IBEE/FTZ-Zwickau EMC certification in Europe. The certification process involves stringent testing, including Transceiver Delay, dV/dt characteristics, R&gt;D and D&gt;R Distortion Delays, Static and Frequency Response of Threshold Voltage, Single-Ended S-Parameters, and Static Tests. The NCA1044-Q1 successfully passed all these tests, underscoring its capabilities in high-speed communication, signal integrity, and electromagnetic compatibility. In addition to VeLIO, the NCA1044-Q1 has also been certified by IBEE/FTZ-Zwickau according to the IEC 62228-3 standard, while also meeting Volkswagen’s VW80121-3, 2023-12 EMC requirements. Unlike SAE J2962, the IEC 62228-3 standard focuses directly on the EMC performance of the transceiver itself, making the certification one of the most rigorous benchmarks in the automotive industry and a widely referenced standard across global automakers. The IBEE/FTZ-Zwickau EMC certification covers four major categories: Emission RF Disturbances, Immunity to RF Disturbances, Immunity to Transients, and Immunity to ESD. The NCA1044-Q1 passed all tests successfully, providing high confidence in its robustness under demanding automotive conditions. With both VeLIO and IBEE/FTZ-Zwickau certifications, the NCA1044-Q1 significantly reduces its implementation and system verification costs for OEMs and Tier 1 suppliers.29.08.2025 10:30:00Augnews_2025-09-15_17.jpg\images\news_2025-09-15_17.jpghttps://www.novosns.com/en/company-news-341novosns.com
Power Modules to Accelerate Data Center Power ArchitectureInfineon Technologies announced the strengthening ...12534Industry NewsPower Modules to Accelerate Data Center Power ArchitectureInfineon Technologies announced the strengthening of its existing collaboration with Delta Electronics in the development of high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers. Together, the companies are taking a next step to drive decarbonization and digitalization in AI data centers further. The partnership leverages Infineon’s ultra-thin silicon (MOSFET) chip technology and embedded packaging expertise, as well as Delta’s industry-leading power module design and manufacturing capabilities. This results in highly dense modules with exceptional efficiency to enable vertical power delivery (VPD) architecture to the xPUs in hyperscale data centers. The usage of vertical power delivery modules in comparison to a lateral mounted discrete solution can save up to 150 tons of CO<sub>2</sub> over an expected lifetime of three years per rack. Assuming that future hyperscale data centers will consists of up to 100 server racks, the amount of carbon dioxide saved is equivalent to the CO<sub>2</sub> emissions of 4000 households per year. Infineon’s OptiMOS&trade; silicon-based 90 A integrated power-stage solution is being utilized by Delta to develop VPD modules. The use of vertical power delivery is a key factor in improving system efficiency as it allows for a more direct and compact power delivery path. By delivering power vertically, rather than horizontally, the VPD modules reduce power delivery network losses in the system. This, in turn, enables the modules to achieve higher power density and efficiency, while also reducing the amount of heat generated due to less power loss. Additionally, the vertical power delivery design also frees up space on the system board, allowing hyperscalers a more efficient use of space and the development of more compact and dense data center designs reducing total-cost of ownership.28.08.2025 17:00:00Augnews_2025-09-15_12.jpg\images\news_2025-09-15_12.jpghttps://www.infineon.com/market-news/2025/INFPSS202508-138infineon.com
Jingya Huang Appointed Senior Manager Marketing CommunicationsWith its commitment to innovation and growth throu...12529PeopleJingya Huang Appointed Senior Manager Marketing CommunicationsWith its commitment to innovation and growth through employee development, Indium Corporation announces the promotion of Jingya Huang to Senior Manager, Marketing Communications, to continue to lead the company’s branding and promotional efforts. In her new role, Huang is responsible for the strategic direction of Indium Corporation’s global marketing communications initiatives, focusing on innovation and maximizing impact in markets worldwide. She will continue to lead the Marketing Communications team with an emphasis on fostering innovation, ownership, and collaboration. Huang will also provide strategic support to other internal teams and lead high-priority special projects that advance the company’s mission and global presence. Huang joined Indium Corporation as Marketing Communications Assistant Manager in 2016. She was promoted to Marketing Communications Manager in 2020, at which point she began leading all global marketing communications efforts and the entire Marketing Communications team.28.08.2025 12:00:00Augnews_2025-09-15_7.jpg\images\news_2025-09-15_7.jpghttps://www.indium.com/blog/indium-corporation-promotes-huang-to-senior-manager-marketing-communications/indium.com
Digital Hall latch IC in CMOS technologyMelexis unveils a variant of the MLX92211, a 3-wir...12540Product ReleaseDigital Hall latch IC in CMOS technologyMelexis unveils a variant of the MLX92211, a 3-wire Hall-effect latch. This device is designed for lateral magnetic position sensing, with high ESD protection and a high output current limit. This latest addition enables motor miniaturization by providing enhanced integration and cost-effective performance, ideal for automotive compact motors used in applications such as seat motors, sunroofs and thermal expansion valves. The MLX92211 IMC addresses these head-on with an integrated magnetic concentrator (IMC) that enables lateral sensing in a surface-mount device (SMD) TSOT-3L package – eliminating the need for through-hole components and aligning with modern automated assembly processes. The result is a reduced motor height, improved packaging flexibility, and optimized manufacturing workflows. The single-package device integrates a voltage regulator (2.7 to 24V operating range), a Hall effect sensor with advanced offset cancellation, and an open-drain output driver. The magnetic core’s enhanced offset cancellation system facilitates faster, more accurate, and robust processing, irrespective of temperature and stress, and includes a negative temperature coefficient to counteract the natural weakening of magnets at high temperatures. The robust latch sensor can be used in both 3-wire and 2-wire (with external resistor) configurations, with the 30mA current limit easily sufficient for maintaining safe and consistent operation in environments such as seat motors – where continuous current up to 25mA is often required. Combined with strong electrostatic discharge (ESD) protection (8kV), automatic output shut-off with self-recovery, and ASIL A functional safety readiness, the MLX92211 IMC meets the reliability requirements of modern automotive deployments.28.08.2025 11:30:00Augnews_2025-09-15_18.png\images\news_2025-09-15_18.pnghttps://www.melexis.com/en/news/2025/28aug2025-melexis-latch-slims-down-motor-applicationsmelexis.com
ReVolt Charges up Hollywood’s Clean EnergyMost production companies today rely on gasoline a...12531Industry NewsReVolt Charges up Hollywood’s Clean EnergyMost production companies today rely on gasoline and diesel generators to operate their movie sets. But as these become more elaborate - with enormous footprints and an expanding array of specialized electronics - energy demands have escalated, as have unwanted levels of dangerous CO<sub>2</sub> emissions. ReVolt Holdings has developed a better way to power movie sets and studio backlots by providing clean, mobile, always-on electricity. ReVolt systems power everything - from cameras, sound and lighting equipment to special effects rigs and basecamps - quietly, efficiently and with no CO<sub>2</sub> output. Diesel generators also produce "dirty" power that requires extra filtration when used in sensitive digital lighting and motion control equipment. ReVolt charging systems produce a pure sine wave profile that ensures a clean, stable power source. To ensure stable voltage levels, ReVolt adopted Vicor BCM&reg; bus converters, DCM&trade; DC-DC converters, and most recently, PRM&trade; regulators. The BCM4414 converts and isolates 800V into a 48V at 35A bus, which the DCM3414 taps off to regulate 24V loads. The 770W/in&sup3; BCM4414 also serves as a battery emulator, reducing the need for a conventional and bulky 48V battery. The PRM is a non-isolated buck-boost DC-DC regulator capable of converting 48V into various output voltages, with power density exceeding 2kW/in&sup3; and 96% efficiency. Portable, clean energy is in demand today more than ever. As it imprints its power concept on the film industry, ReVolt is preparing to address a variety of new applications, from servicing natural disaster zones to providing power for construction and live events. With the trend toward eMobility and greener, more sustainable power, the relationship with Vicor - grounded in modular power delivery - is gaining momentum and setting the stage for a greener future.27.08.2025 14:00:00Augnews_2025-09-15_9.jpg\images\news_2025-09-15_9.jpghttps://www.vicorpower.com/press-room/revoltvicorpower.com
Strengthening Supply Resilience of Key Material for Global Semiconductor IndustryAsahi Kasei will increase PIMEL&trade; photosensit...12530Industry NewsStrengthening Supply Resilience of Key Material for Global Semiconductor IndustryAsahi Kasei will increase PIMEL&trade; photosensitive polyimide (PSPI) production capacity at its Fuji City facility in Shizuoka Prefecture, Japan. PSPI is a key material for the global electronics industry, mainly used for buffer coatings and passivation layers in semiconductor applications. By doubling its capacity by 2030, Asahi Kasei underlines its commitment to growing its Electronics business and reinforcing its position as a key supplier for the global semiconductor industry. With the global semiconductor industry entering a new growth cycle and projected to surpass US$1 trillion in revenue by the mid-2030s, as reported by consulting firm Alvarez & Marsal, Asahi Kasei has forecasted that the demand for next-generation semiconductor interlayer insulation will continue to grow rapidly at an average annual growth rate of 8%. In response to this quickly rising demand, Asahi Kasei completed the construction of a new plant producing PIMEL&trade; photosensitive polyimide in Fuji City, Shizuoka Prefecture, in December 2024. Since then, the company has decided to expand production in Fuji City further, doubling the 2024 capacity by 2030. This expansion is expected to significantly improve the supply resilience of essential materials in the manufacturing of semiconductors. Asahi Kasei will invest approximately &yen;16 billion in this expansion.26.08.2025 13:00:00Augnews_2025-09-15_8.JPG\images\news_2025-09-15_8.JPGhttps://www.asahi-kasei.com/asahi-kasei.com
Conference on Production Technologies and Systems for Electric Mobility (EPTS)The Electric Drives Production Conference (E|DPC) ...12513Event NewsConference on Production Technologies and Systems for Electric Mobility (EPTS)The Electric Drives Production Conference (E|DPC) is expanding to become the Conference on Production Technologies and Systems for Electric Mobility (EPTS), taking place in Karlsruhe, Germany October 8 & 9. Join leading experts from industry and research for two days packed with high level keynotes, sound technical presentations and networking opportunities.25.08.2025 11:00:00Augnews_2025-09-01_6.jpg\images\news_2025-09-01_6.jpghttps://www.epts-conference.com/epts-conference.com
New CEO of WBG Power Semiconductor CompanyNavitas Semiconductor's Board of Directors has app...12512PeopleNew CEO of WBG Power Semiconductor CompanyNavitas Semiconductor's Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. He will also join the Company's Board of Directors. The new CEO succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025. Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics, including Senior Vice President and General Manager of its Power Division from October 2023. Chris Allexandre oversaw Renesas' $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas' acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas' Chief Sales and Marketing Officer from 2019 to 2023. Prior to his tenure at Renesas, Navitas' new CEO held executive roles at Integrated Device Technology (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Chris Allexandre began his career at Texas Instruments, beginning in its New College Graduate rotation program, and over 16 years in business and sales roles based in Europe and China, becoming TI's Vice President of Sales for EMEA and a member of TI's strategic leadership team in 2012. Allexandre's management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets. Chris Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l'Électronique et du Numérique (ISEN) in Lille, France.25.08.2025 10:00:00Augnews_2025-09-01_5.png\images\news_2025-09-01_5.pnghttps://navitassemi.com/navitas-semiconductor-names-chris-allexandre-as-president-and-chief-executive-officer/navitassemi.com
Back to School Giveaway to Empower Tomorrow’s InnovatorsDigiKey announces its annual Back to School Giveaw...12526Industry NewsBack to School Giveaway to Empower Tomorrow’s InnovatorsDigiKey announces its annual Back to School Giveaway, which offers university students a chance to win products and swag, including one grand prize of a Teledyne LeCroy Power Supply unit. Five entrants will be randomly selected to win a prize package that includes products such as an Aven Tools LED lamp, a Pokit Innovations all-in-one digital tool, a Weidmüller wire stripper, an Adafruit Ladyada’s electronics toolkit, DigiKey swag and more. Plus, one grand prize winner will also receive a Teledyne LeCroy Power Supply unit. "Each year, the Back to School Giveaway is a celebration of curiosity, creativity and the bright future ahead," said Brooks Vigen, senior director of global strategic marketing at DigiKey. "DigiKey is proud to support students as they turn bold ideas into real-world innovations, and we’re excited to see how this generation will shape the technologies of tomorrow." The sweepstakes is open to any student with a university or college email address, and entries may be made in students’ local language. Submissions are open until Oct. 24, 2025, and winners will be announced around Nov. 15, 2025.25.08.2025 09:00:00Augnews_2025-09-15_4.png\images\news_2025-09-15_4.pnghttps://www.digikey.com/en/resources/social/back2school?utm_source=referral&utm_medium=pressrelease&utm_campaign=pressreleasedigikey.com
Collaboration on SiC Power Semiconductor WafersToshiba Electronic Devices & Storage Corporation (...12533Industry NewsCollaboration on SiC Power Semiconductor WafersToshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support. Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.22.08.2025 16:00:00Augnews_2025-09-15_11.jpg\images\news_2025-09-15_11.jpghttps://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/08/corporate-20250822-1.htmltoshiba.semicon-storage.com
RT Box Workshop in ZurichIn the workshop, you will learn modeling technique...12514Industry NewsRT Box Workshop in ZurichIn the workshop, you will learn modeling techniques for real-time simulations using PLECS with the PLECS RT Box. You will work hands-on with hardware-in-the-loop (HIL) and rapid control prototyping (RCP) application examples. You will see that step size can be reduced to nanoseconds, even for large-scale models. In addition to the technical aspects, the workshop offers an opportunity to connect with the developers of PLECS. The required software and PLECS RT Box hardware will be provided for the workshop.21.08.2025 12:00:00Augnews_2025-09-01_7.jpg\images\news_2025-09-01_7.jpghttps://plexim.com/events/seminars/2515plexim.com
USB-C Power Solution with Three-Level TopologyRenesas Electronics introduced the RAA489300/RAA48...12535Product ReleaseUSB-C Power Solution with Three-Level TopologyRenesas Electronics introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller. The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications. The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses. The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.20.08.2025 06:30:00Augnews_2025-09-15_13.jpg\images\news_2025-09-15_13.jpghttps://www.renesas.com/en/about/newsroom/new-renesas-usb-c-power-solution-innovative-three-level-topology-improves-performance-and-reducesrenesas.com
SMD Heat Sinks from the TapeWith the SMD heatsink product group Fischer Elektr...12516Product ReleaseSMD Heat Sinks from the TapeWith the SMD heatsink product group Fischer Elektronik claims to offer "the smallest ribbon heatsinks, also available as tape & reel as standard now, especially for cooling electronic devices on the PCB". The packaging form of the SMD heatsinks as a tape & reel supports and simplifies the automatic assembly and soldering process of the PCB, as the SMD heatsinks can be handled in a similar way to an SMT component. The heatsink designs ICK SMD A 13 ... B TR, ICK SMD F 8 ... TR, ICK SMD F 21 ... B TR, ICK SMD K 19 ... B TR, ICK SMD N 8 ... TR and ICK SMD N 19 ... B TR are optionally available with a black anodised or solderable surface coating as a tape & reel (TR) version. Depending on the position of the SMD heatsink in the tape, an additional kapton point acts as a mounting aid. The tape diameter for all designs is 330 mm, with a tape width of 16, 24 or 32 mm, depending on the heatsink size. All specifications, such as tape diameter, tape width and the number of SMD heatsinks on a reel, can also be adapted to customer-specific requirements.15.08.2025 07:30:00Augnews_2025-09-01_9.JPG\images\news_2025-09-01_9.JPGhttps://www.fischerelektronik.de/en/latest-news/press-releases/2025-fischer-pressemitteilungen/smd-heat-sinks-from-the-tape/fischerelektronik.de
Changes in Management Positions at Würth Elektronik eiSos GroupDirk Knorr has taken over the position of COO of t...12508PeopleChanges in Management Positions at Würth Elektronik eiSos GroupDirk Knorr has taken over the position of COO of the Würth Elektronik eiSos Group. After completing his training as an industrial electronics technician and subsequently graduating with a degree in industrial engineering, Dirk Knorr initially worked as a project manager for a solutions provider before joining Würth Elektronik in 2005. Knorr has extensive expertise in quality and risk management. As part of his role as Managing Director Germany, he has driven forward digitization projects and initiated logistics adjustments at the Waldenburg site, among other things. In his new role, Mr. Knorr will be responsible for the company's core operational pillars, including IT, digital transformation, production, logistics, quality, and eiSos Group compliance standards. Simultaneously, Sebastian Valet has taken over Dirk Knorr's previous position as Managing Director of Würth Elektronik eiSos. Sebastian Valet holds a degree in business administration and has been with the Würth Group since 1999, where his career path led him to Würth Elektronik in 2002. As export manager, Valet played a key role in the internationalization of Würth Elektronik and established the markets in Israel, Turkey, and Australia before taking over several commercial departments at the headquarters in Waldenburg. Most recently, he was responsible for supply chain management, internal sales, export control, and legal & compliance. Following the change in leadership, the management team at Würth Elektronik eiSos now consists of the following members: Thomas Garz, Chief Executive Officer (CEO) of the Würth Elektronik eiSos Group; Alexander Gerfer, Chief Technology Officer (CTO), Würth Elektronik eiSos Group; Dirk Knorr, Chief Operating Officer (COO); Sebastian Valet, Managing Director; Josef Wörner, Managing Director.14.08.2025 06:00:00Augnews_2025-09-01_1.jpg\images\news_2025-09-01_1.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=managementupdatewe-online.com
Materials Informatics will "revolutionize Battery Development"The traditional battery materials discovery proces...12497Industry NewsMaterials Informatics will "revolutionize Battery Development"The traditional battery materials discovery process involves physics-informed trial-and-error, which is both expensive and time-consuming. Machine learning methods, specifically materials informatics for discovering electrolyte, electrode, current collector and packaging materials, could provide a necessary avenue for accelerating the battery development process. IDTechEx has now published a report on materials informatics for batteries named "AI-Driven Battery Technology 2025-2035: Technology, Innovation and Opportunities". Materials informatics describes a field of machine learning in which data science is used to screen and discover materials for specific use-cases. It is a technology that has existed for several decades, and a successor to bio-informatics, revolutionizing the pharmaceutical industry. An emerging technology is de novo design, describing materials informatics that utilizes generative AI to design entirely novel materials. A scoring agent and a generative agent work in tandem to score theoretical materials, eventually selecting a candidate with the highest potential for the given application. Meanwhile, de novo design is relatively immature, and though it has seen some success, most of this is in research rather than in the commercial world. Completely novel materials also lack existing supply chains, and as such they are expensive to synthesize as they do not benefit from economy of scale. Generally, IDTechEx predicts that well-established chemistries will heavily favor virtual screening approaches over de novo design, while less established chemistries will require de novo design. IDTechEx predicts that materials informatics will become a necessary part of the battery development over the next decade, especially as new chemistries like lithium-metal become more common.12.08.2025 12:00:00Augnews_2025-08-15_7.png\images\news_2025-08-15_7.pnghttps://www.idtechex.com/en/research-report/ai-driven-battery-technology-2025-2035-technology-innovation-and-opportunities/1049idtechex.com
Survey reveals how Data is powering the Future for Solar Energy Innovation and GrowthA survey, conducted by Censuswide on behalf of Flu...12496Industry NewsSurvey reveals how Data is powering the Future for Solar Energy Innovation and GrowthA survey, conducted by Censuswide on behalf of Fluke, on key challenges for the solar industry identifies improving panel efficiency, transitioning from reactive to predictive maintenance, and adopting smart technologies as top priorities. Crucially, data emerges as the driving force behind innovation and operational efficiency. The survey engaged over 400 solar OEMs, technicians, and installers across the UK, Germany, Spain and the USA to gain insights. The survey results also highlighted their attitudes toward emerging trends and their expectations for how the future of solar energy is likely to evolve in the coming years. The research revealed that nearly two-thirds of respondents (63%) believe solar will become the dominant energy source in their country. However, it also highlighted significant challenges that must be addressed to turn this optimistic vision into reality and pave the way for a solar-powered future. One of the challenges that emerged in the survey's findings is the need to rapidly shift from reactive maintenance to a more proactive approach. With 91% of those surveyed reporting concerns about the efficiency of the current generation of solar modules and 39% of respondents identifying inverter failures as a common issue, it's clear an effective maintenance strategy is a necessity. Nearly a third of all respondents described their current maintenance strategy as reactive, while more than half indicated that implementing predictive maintenance was a key priority. 59% stressed the need to train technicians in advanced diagnostic tools to address evolving challenges, while 45% view AI integration in solar panel design, optimization, and maintenance as a key opportunity.12.08.2025 11:00:00Augnews_2025-08-15_6.jpg\images\news_2025-08-15_6.jpghttps://www.fluke.com/en#fluke.com
Fire Protection Materials for EV Batteries 2025-2035: Markets, Trends, and ForecastsIDTechEx's report on Fire Protection Materials for...12494Industry NewsFire Protection Materials for EV Batteries 2025-2035: Markets, Trends, and ForecastsIDTechEx's report on Fire Protection Materials for Electric Vehicle Batteries analyzes trends in battery design, safety regulations, and how these will impact fire protection materials. The report benchmarks materials directly and in application within EV battery packs. The materials covered include ceramic blankets/sheets (and other non-wovens), mica, aerogels, coatings (intumescent and other), encapsulants, encapsulating foams, compression pads, phase change materials, polymers, and several other materials. IDTechEx predicts this market will grow at 15% CAGR from 2024 to 2035. By the way: Data continues to support the fact that EVs are less likely to catch fire than internal combustion engine vehicles. However, as a new technology, EVs get more press. Each cell format – prismatic, pouch and cylindrical – has different needs in terms of inter-cell materials which has led to trends in fire protection material adoption. For example, cylindrical systems have largely used encapsulating foams, whereas prismatic systems typically use materials in sheet format such as mica. The market for fire protection materials is becoming increasingly crowded, with a wide range of materials and suppliers available. IDTechEx's material database covers over 150 materials from 72 suppliers. The major categories are benchmarked in the report in terms of thermal conductivity, density, cost, and cost in the required application volume. The report also discusses the regulations that are currently in place and those being discussed. These feed into IDTechEx's market forecasts showing a greater adoption of fire protection materials per vehicle.12.08.2025 09:00:00Augnews_2025-08-15_4.png\images\news_2025-08-15_4.pnghttps://www.idtechex.com/en/research-report/fire-protection-materials-for-ev-batteries-2025-2035-markets-trends-and-forecasts/1068idtechex.com
TVS Diode for high-speed Consumer InterfacesTDK Corporation has expanded its TVS diode lineup ...12517Product ReleaseTVS Diode for high-speed Consumer InterfacesTDK Corporation has expanded its TVS diode lineup with three models in the SD0201 series, tailored for high-speed consumer electronics interfaces. These TVS diodes offer compact protection for USB Type-C, HDMI, DisplayPort, and Thunderbolt connections in smartphones, laptops, tablets, wearables, and networking devices. Each component comes in a 0201 chip-scale package (CSP), measuring 0.58 x 0.28 x 0.15 mm&sup3; (L x W x H) for space-constrained designs. Having working voltages of &plusmn;1 V, &plusmn;2 V, and &plusmn;3.6 V, the TVS diodes safeguard sensitive circuits from electrostatic discharge (ESD) and transient surges. This means they meet IEC 61000-4-2 standards with ESD discharge robustness up to &plusmn;15 kV and support surge current handling up to 7 A, depending on the variant. Their symmetrical design enables bidirectional protection and thus flexible PCB routing, while very low leakage currents and dynamic resistance as low as 0.16 &#8486; enhance application-level efficiency. The individual components differ in their DC working voltage and parasitic capacitance: the SD0201SL-S1-ULC101 has a working voltage of &plusmn;3.6 V and a parasitic capacitance of 0.65 pF, the SD0201-S2-ULC105 of &plusmn;2 V and 0.7 pF, and the SD0201SL-S1-ULC104 of &plusmn;1 V and 0.15 pF. A LTspice model library for SEED simulations for TVS diodes is available for download.12.08.2025 08:30:00Augnews_2025-09-01_10.jpg\images\news_2025-09-01_10.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-expands-ultra-low-voltage-tvs-diode-portfolio-for-high-speed-consumer-interfaces/3625224tdk-electronics.tdk.com
eFuse Meets High Reliability Server Application RequirementsAlpha and Omega Semiconductor announced the releas...12537Product ReleaseeFuse Meets High Reliability Server Application RequirementsAlpha and Omega Semiconductor announced the release of its AOZ17517QI series, a 60A eFuse in a compact 5mm x 5mm QFN package. AOS optimized this eFuse product series for 12V power rails in servers, data centers, and telecom infrastructure. Due to high-reliability requirements for datacenter and telecom infrastructure products, all critical power rails are monitored and protected by an eFuse device to protect the main power bus from interruption due to abnormal load under fault conditions. AOS’ eFuse continuously monitors the current flowing through the power switch. If the current exceeds the set limit, the switch will limit the current to the maximum allowed. If the high current load persists, the switch will eventually turn off, protecting downstream loads from damage, thus acting as a fuse. The eFuse is constructed with AOS’ advanced co-packaging technology that combines a high-performance IC with protection features and the company’s latest high SOA Trench MOSFET. The AOZ17517QI series’ MOSFET offers low R<sub>DS(ON)</sub> (0.65mohm) that isolates the load from the input bus when the eFuse is off. These devices are designed to integrate accurate analog current and voltage monitoring signals, and designers can also use multiple eFuse devices in parallel for higher current applications. Multiple devices can operate concurrently and seamlessly distribute the current during the startup phase. In addition, the AOZ17517QI features startup SOA management and other protections, enabling a streamlined and glitch-free system power-up or the ability to hot plug into the backplane.12.08.2025 08:30:00Augnews_2025-09-15_15.jpg\images\news_2025-09-15_15.jpghttps://www.aosmd.com/news/alpha-and-omega-semiconductor-announces-advanced-efuse-meets-high-reliability-serveraosmd.com
Global Renewable Power installed Capacity to surge to 11.2 TW by 2035Renewable resources, particularly solar photovolta...12493Industry NewsGlobal Renewable Power installed Capacity to surge to 11.2 TW by 2035Renewable resources, particularly solar photovoltaic (PV) and wind energy, are gaining a larger share in the energy portfolio. Driven primarily by declining costs and strong policy support, particularly for solar PV and wind energy, the global renewable power installed capacity is estimated to surge from 3.42 TW in 2024 to 11.2 TW by 2035, according to GlobalData. The company's latest report, "Renewable Energy: Strategic Intelligence", reveals that the global renewables market expanded from a cumulative installed capacity of 0.93 TW in 2015 to 3.42 TW by the end of 2024, representing a compound annual growth rate (CAGR) of 16 %. The total cumulative installed capacity is projected to record a CAGR of 11 % during the period 2024-35. Solar PV and wind power were significant contributors to the renewable energy sector, accounting for 56 % and 33 % of the total installed capacity in 2024, respectively. The APAC region has emerged as the largest market for solar PV and wind installed capacity, boasting 1.18 TW and 0.67 TW in 2024, respectively. Artificial intelligence is transforming the renewable energy sector by enhancing generation optimization, advancing grid management, and increasing efficiency across multiple systems. AI algorithms possess the capability to forecast renewable energy production, oversee grid operations in real-time, and refine energy storage strategies. These advancements contribute to heightened reliability and efficiency, thereby rendering renewable energy more effective and economical. Looking ahead, the onshore wind sector is forecasted to grow to $186.9 billion (CAGR: 4 %) and the offshore wind sector to $150.4 billion (CAGR: 14 %) by 2030.12.08.2025 08:00:00Augnews_2025-08-15_3.png\images\news_2025-08-15_3.pnghttps://www.globaldata.com/store/report/renewable-energy-theme-analysis/globaldata.com
Europe remains committed to growing Offshore Wind EnergyA study conducted by Morningstar DBRS makes it ver...12491Industry NewsEurope remains committed to growing Offshore Wind EnergyA study conducted by Morningstar DBRS makes it very clear: Europe remains an important market for offshore wind with rising relevance over the next few decades as it moves towards meeting its carbon emission reduction goals and increasing its energy independence. This contrasts sharply with the United States' path following President Trump's executive order on January 20, 2025, withdrawing all areas of the U.S. outer continental shelf from Offshore Wind Leasing. Europe has a long history of using offshore wind as part of its energy mix. The world's first offshore wind farm was completed in Denmark in 1991 by Orsted. The project consisted of 11 turbines with total generation capacity of 5 MW. The European offshore wind industry has grown significantly since then with Europe achieving 35 GW of installed generation by the end of the first half of 2024. Europe has a significant share of the offshore wind industry with 38% of the world's offshore wind capacity, with Germany and the U.K. as the main contributors. The European market is significantly larger than the U.S. offshore wind market with the U.S. Energy Information Administration reporting in December 2024 that there are only 130 MW of operating offshore wind projects and 6.9 GW planned by projects by 2027. Offshore wind represents a key part of Europe's goal to transition to renewable electricity sources and to achieve energy independence. Bloomberg NEF (BNEF) forecasts European wind capacity will reach 40 GW in 2025, increasing to 80 GW by 2030 and 274 GW by 2040, with the U.K., Germany, and the Netherlands contributing the most to growth.12.08.2025 06:00:00Augnews_2025-08-15_1.png\images\news_2025-08-15_1.pnghttps://dbrs.morningstar.com/research/449694dbrs.morningstar.com
PwrSoC Registration is now OPEN!The PwrSoC Workshop is a leading international eve...12492Event NewsPwrSoC Registration is now OPEN!The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE Power Electronics Society (IEEE PELS) and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The program will feature three plenary speeches delivered by distinguished industry leaders, providing valuable insights into the latest advancements in miniaturized and integrated power conversion and power management technologies. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies.11.08.2025 07:00:00Augnews_2025-08-15_2.jpg\images\news_2025-08-15_2.jpghttp://pwrsocevents.com/pwrsocevents.com
PCIM Asia Shanghai Conference 2025 programme to explore power electronics in AI and e-mobilityThe PCIM Asia Shanghai Conference, Asia's foremost...12498Event NewsPCIM Asia Shanghai Conference 2025 programme to explore power electronics in AI and e-mobilityThe PCIM Asia Shanghai Conference, Asia's foremost academic gathering for the power electronics industry, returns to Shanghai this September. The 2025 programme will unite industry leaders, technical experts and academics to explore advanced solutions and future trends, highlighting developments in cutting-edge technologies such as silicon carbide (SiC), gallium nitride (GaN), motor drives and motion control, and more. Debuting at the conference is the new "Dialogue with Speakers" zone, where dedicated booths will provide a setting for more direct and in-depth interactions between speakers and attendees. Held in conjunction with the PCIM Asia Shanghai exhibition, the PCIM Asia Shanghai Conference addresses key industry topics including motion control systems and power supply solutions. The exhibition, in turn, showcases the latest technologies in power electronics components, power conversion, intelligent motion and more. The combined programme brings together leading specialists from the power electronics sector, application fields, and research institutions worldwide to share their knowledge and discuss the future of the industry.07.08.2025 13:00:00Augnews_2025-08-15_8.jpg\images\news_2025-08-15_8.jpghttps://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en/press/press-releases/2025/PCIM25_PR4.htmlpcimasia-shanghai.com
1200 Volt Family of IGTO(t)Pakal Technologies announced the commercial launch...12522Product Release1200 Volt Family of IGTO(t)Pakal Technologies announced the commercial launch of its 1200 Volt revolutionary IGTO(t) power semiconductor. The initial product is a Gen 2 1200 Volt, 40 Amp IGTO(t) and is available in a TO-247 package with co-packed diode. The 1200 V IGTO(t) is a direct drop-in upgrade for conventional IGBTs, using the same drivers and controllers and switching mechanism as a 1200 V IGBT. Independent tests confirm this Gen 2 IGTO(t) delivers up to 40% lower conduction losses at full current and 150°C compared to top-tier IGBTs. With this 1200 V conduction loss breakthrough, the IGTO(t) not only beats the best silicon, it also directly challenges (and in many conditions beats) the conduction loss performance of much more expensive Silicon Carbide (SiC) MOSFETS. The 1200 V IGTO(t) unlocks new levels of energy efficiency and cost savings across EVs, renewable energy, industrial automation and more. "Our Gen 2 1200 V device shows remarkable conduction loss advantages that are especially useful for &lt;20 kHz applications." said Dr. Richard Blanchard, co-founder of Pakal Technologies. "Unlike IGBTs, the IGTO(t) device scales easily to much higher voltages. We expect to maintain and extend our high-current conduction loss advantage all the way to 6,500 V." The IGTO(t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO(t) to address the multibillion-dollar market gap between legacy silicon IGBTs and more expensive SiC products.05.08.2025 13:30:00Augnews_2025-09-01_15.jpg\images\news_2025-09-01_15.jpghttps://pakal-tech.com/pakal-tech.com
Common Mode ChokeSchurter launched a family of vertically mountable...12518Product ReleaseCommon Mode ChokeSchurter launched a family of vertically mountable chokes for PCBs. The current-compensated DKCV-1 chokes use nanocrystalline cores and are designed for currents from 0.5 to 10 A. They are suited for EMI suppression in industrial, medical, and test equipment up to 300 VAC/450 VDC. The DKCV-1 chokes can be mounted directly on the PCB with a vertical choke arrangement. All variants of the DKCV-1 family are ENEC, cUR and UR approved and have the same footprint on the PCB. Typical applications include switching power supplies, industrial, medical, laboratory and test equipment.05.08.2025 09:30:00Augnews_2025-09-01_11.jpg\images\news_2025-09-01_11.jpghttps://www.schurter.com/en/news/npi-video-common-mode-choke-dkcv-1schurter.com
Ultra-Fast Current Shunt SeriesPMK launched its UFCS devices (Ultra-Fast Current ...12515Product ReleaseUltra-Fast Current Shunt SeriesPMK launched its UFCS devices (Ultra-Fast Current Shunts), aiming to set a new industry standard for current measurement in high-performance power electronics. The reason why it is considered to set a standard is described by PMP as follows: "Designed to meet the demands of next-generation systems, UFCS shunts combine &gt;1 GHz bandwidth with ultra-low insertion inductance (&lt;200 pH), enabling unparalleled signal fidelity in the analysis of ultra-fast transient currents." The UFCS shunts are suited for applications involving GaN and SiC power semiconductors, where accurate switching loss measurements and pulse current analysis are critical. Their non-inductive frequency response ensures clean and reliable data acquisition, even in the demanding wide-bandgap environments. For measurements requiring high common-mode rejection, the UFCS can be paired with PMK's FireFly&reg; optically isolated voltage probes. Alternatively, they can be connected directly to any 5 &#8486; input measuring device for general-purpose use. The first models available in the UFCS series include 11 m&#8486;, 24 m&#8486;, and 52 m&#8486; versions, covering a wide range of applications. 1 m&#8486; and 5 m&#8486; versions are said to follow shortly.05.08.2025 06:30:00Augnews_2025-09-01_8.jpg\images\news_2025-09-01_8.jpghttps://www.pmk.de/en/products/ufcspmk.de
Gaining In-Depth High Voltage Relay Switching ExpertisePickering Electronics has established its High Vol...12510Industry NewsGaining In-Depth High Voltage Relay Switching ExpertisePickering Electronics has established its High Voltage Reed Relay Resource Center, an online reference library of technical information for engineers building HV switching systems or looking to develop their knowledge. This digital reference library collects together deep technical expertise and video, application guide and case study resources, authored by subject matter experts from the company's Centre of Excellence for high voltage switching. Pickering has been active in high voltage reed relays for more than half a century, introducing its first HV reed relays in 1970. Pickering's High Voltage Reed Relay Resource Center contains information engineers need to know about high voltage reed relays, including how they work, what to look for when selecting a device, and how to use it to ensure the best performance in your HV switching application. Topics include the construction of a high-voltage reed relay, including the switch blades & gap, and magnetic screening but also AC and DC considerations as well as hot and cold switching. Furthermore, it deals with loads and in-rush currents, test methods and failure modes, including vacuum failure, plating material damage, and breakdown & arcing. On top of the Resource Center answers the question, why reed relays may be a better option for HV applications than competing technologies, such as electromechanical relays (EMRs) & solid-state relays (SSRs).03.08.2025 08:00:00Augnews_2025-09-01_3.jpg\images\news_2025-09-01_3.jpghttps://www.pickeringrelay.com/high-voltage-reed-relay-resource-center/pickeringrelay.com
Power Modules for higher CurrentsWürth Elektronik has expanded its MagI&sup3;C-VDLM...12499Product ReleasePower Modules for higher CurrentsWürth Elektronik has expanded its MagI&sup3;C-VDLM power module series with two new models. With output currents of 4 A and 5 A respectively, they further enhance the performance of the existing portfolio of compact DC/DC power supply modules. The modules are designed for input voltages from 4 to 36 V and come in a space-saving LGA-26 package (11 × 6 × 3 mm&sup3;). They provide an output voltage from 1 to 6 V and, like all power modules in the MagI&sup3;C-VDLM series, integrate the essential components for a DC/DC power supply in its package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power modules are claimed to "maintain high efficiency across the entire output current range by automatically switching between operating modes based on load requirements". So, they contribute to a minimal output ripple, which is needed for precise and interference-sensitive applications. Typical applications include point-of-load DC/DC converters, industrial, medical, test and measurement equipment, or for supplying power to DSPs, FPGAs, MCUs, MPUs, and interfaces. The MagI&sup3;C-VDLM modules achieve peak efficiencies of up to 96 percent and impress with their EMC performance in accordance with EN55032 Class B / CISPR-32. Additional features include selectable switching frequencies, automatic PFM/PWM transition, and a sync function for synchronizing to individual clock frequencies.30.07.2025 06:30:00Julnews_2025-08-15_9.jpg\images\news_2025-08-15_9.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=magi3c-series-expandedwe-online.com
Webinar: How to Test GaN and SiC MOSFET and IGBT DevicesJoin Teledyne LeCroy to learn more about how to te...12495Event NewsWebinar: How to Test GaN and SiC MOSFET and IGBT DevicesJoin Teledyne LeCroy to learn more about how to test and qualify GaN MOSFETs, SIC MOSFETs and Si IGBTs using the double-pulse test circuit and high voltage isolated probes. Learn how you can use your benchtop test instruments to effectively (and safely) analyse your circuits in a qualitative and quantitative manner.29.07.2025 10:00:00Julnews_2025-08-15_5.jpg\images\news_2025-08-15_5.jpghttps://go.teledynelecroy.com/l/48392/2025-07-17/8qmj6yteledynelecroy.com
Gate driver photocouplers enhance MOSFETs and IGBTs switching efficiencyToshiba Electronics Europe introduced gate driver ...12502Product ReleaseGate driver photocouplers enhance MOSFETs and IGBTs switching efficiencyToshiba Electronics Europe introduced gate driver photocouplers to control 1 A and 6 A class gate drive currents for small- to medium-capacity MOSFET and IGBT gate drives. The TLP579xH series is suitable for driving SiC MOSFETs and IGBTs in green energy and factory automation applications, including industrial photovoltaic (PV) inverters, uninterruptible power supplies (UPSs), and electric vehicle (EV) charging stations, which operate in harsh thermal environments. All three devices in the TLP579xH series are designed to drive small to medium capacity power devices as well as IGBTs. The TLP5791H has a performance of -1.0/+1.0 A for peak high-level/low-level output current (I<sub>OLH</sub>/I<sub>OHL</sub>), with an under voltage lock out (UVLO) threshold voltage (V<sub>UVLO+</sub>) of 9.5 V (max.), a UVLO threshold voltage (V<sub>UVLO-</sub>) of 7.5 V (min.), and a UVLO hysteresis voltage (V<sub>UVLOHYS</sub>) of 0.5 V (typ.). With the TLP5794H, the peak output current spans from -6.0/+4.0 A for I<sub>OLH</sub>/I<sub>OHL</sub>, with a Vsub>UVLO+</sub> of 13.5 V (max.), a V<sub>UVLO-</sub> of 9.5 V (min.), and V<sub>UVLOHYS</sub> of 1.5 V (typ.). The TLP5795H is capable of -4.5/+5.3 A for peak high-level/low-level output current (I<sub>OLH</sub>/I<sub>OHL</sub>), with V<sub>UVLO+</sub> of 13.5 V (max.), a V<sub>UVLO-</sub> of 11.1 V (min.), and V<sub>UVLOHYS</sub> of 1.0 V (typ.). The TLP579xH series is a rail-to-rail output device that enables switching characteristics with less voltage drop from the power supply voltage. It operates within a temperature range of -40 °C to +125 °C and is housed in a SO6L package, featuring a minimum creepage distance of 8.0 mm and an isolation voltage of 5000 V<sub>RMS</sub>.29.07.2025 09:30:00Julnews_2025-08-15_12.jpg\images\news_2025-08-15_12.jpghttps://toshiba.semicon-storage.com/eu/semiconductor/product/isolators-solid-state-relays/gate-driver-photocouplers/articles/lineup-expansion-of-photocouplers-for-mosfet-and-igbt-gate-driver-suitable-for-industrial-equipment.htmltoshiba.semicon-storage.com
1200 V MOSFETs in a Q-DPAK PackageInfineon Technologies has launched the CoolSiC&tra...12500Product Release1200 V MOSFETs in a Q-DPAK PackageInfineon Technologies has launched the CoolSiC&trade; MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package. These devices deliver enhanced thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers. The CoolSiC 1200 V G2 technology enables up to 25 percent lower switching losses for equivalent R<sub>DS(on)</sub> devices, thereby increasing system efficiency by up to 0.1 %. Utilizing Infineon's .XT die attach interconnection technology, the G2 devices achieve more than 15 % lower thermal resistance and an 11 % reduction in MOSFET temperature compared to G1 family products. The R<sub>DS(on)</sub> values, range from 4 m&#8486; to 78 m&#8486;, while the technology supports overload operation up to a junction temperature (T<sub>vj</sub>) of 200 °C. The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon's broader X-DPAK top-side cooling platform. The standardized package height across all TSC variants – including Q-DPAK and TOLT – is 2.3 mm.29.07.2025 07:30:00Julnews_2025-08-15_10.jpg\images\news_2025-08-15_10.jpghttps://www.infineon.com/market-news/2025/INFGIP202507-128infineon.com
Power ModulesThe GRD-12A is a reference design board based on t...12521Product ReleasePower ModulesThe GRD-12A is a reference design board based on the latest generation of GAIA Converter COTS modules, intended to demonstrate the applicability and performances of converters from the MGDD series. It is a multiple outputs board fully configurable and capable of delivering up to 120 W spread over 3 main output channels and 2 auxiliary channels. It is protected in terms of inrush currents, spikes & surges and provides up to 7 outputs between 3.3 V and 52 V while complying with Mil-Standards 1275 (ground vehicle transients), 704 (airborne input voltage) and 461 (EMI/EMC) as well as ABD100 (aeronautical requirements) and DO-160 (civil aviation). At its input the GRD12-A-M – 120W COTS Power Module with a built-in hold-up function accepts 24/28 V<sub>DC</sub>.28.07.2025 12:30:00Julnews_2025-09-01_14.jpg\images\news_2025-09-01_14.jpghttps://www.gaia-converter.com/product-overview/power-solutions/grd-12a/gaia-converter.com
Shielded Power InductorBourns introduced its Model SRP1024HMCT shielded p...12520Product ReleaseShielded Power InductorBourns introduced its Model SRP1024HMCT shielded power inductor, which is manufactured using a hot press molding process with carbonyl powder. This model is available in a low profile package for the operating temperature range from -40 °C to +125 °C for use e. g. in point-of-load (PoL) converters and data center environments.28.07.2025 11:30:00Julnews_2025-09-01_13.jpg\images\news_2025-09-01_13.jpghttps://www.bourns.com/news/press-releases/pr/2025/07/28/bourns-introduces-shielded-power-inductor-model-featuring-high-heating-saturation-current-and-low-magnetic-field-radiationbourns.com
TOLT-Packaged 80 V MXT MV MOSFET for E-Scooters and LEVsMagnachip Semiconductor released an 80 V MXT MV MO...12501Product ReleaseTOLT-Packaged 80 V MXT MV MOSFET for E-Scooters and LEVsMagnachip Semiconductor released an 80 V MXT MV MOSFET, MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. The TOLT-packaged MOSFET delivers a major advancement in thermal management. Unlike conventional TOLL (TO-Leadless) packages that dissipate heat through the bottom, the TOLT package is engineered to release heat directly from the top via a mounted metal heat sink. This structure substantially reduces thermal resistance between the junction and the external environment, making it well-suited for thermally demanding applications, such as e-scooters and LEVs. Simulations and tests conducted by Magnachip demonstrated that this 80 V MV TOLT package solution achieved an average 22 % reduction in junction temperature compared to using standard TOLL packages. This improvement not only extends an application's lifespan, but also enhances the system reliability. Furthermore, the TOLT package enables compact, lightweight application designs thanks to its high power density and efficient thermal flow that. At a V<sub>GS</sub> of 10 V the R<sub>DSon</sub> is specified with 1.7 m&#8486;.28.07.2025 08:30:00Julnews_2025-08-15_11.jpg\images\news_2025-08-15_11.jpghttps://www.magnachip.com/magnachip-introduces-tolt-packaged-80v-mxt-mv-mosfet-for-e-scooters-and-levs/magnachip.com
Reliable EMC ProtectionThe extended range of products from Schurter inclu...12503Product ReleaseReliable EMC ProtectionThe extended range of products from Schurter includes high-performance EMC filters, chokes, and pulse transformers for a wide variety of applications – from industrial and medical technology to energy and automation systems. Included are power entry modules with integrated line filters (DG11 with thermal-magnetic circuit breaker), 1- and 3-phase block filters (FPAC RAIL, FMAB NEO, FMBC EP) as well as suppression chokes, magnetically compensated, linear, storage, and linear/saturating types (DKCV-1, DKUH-1), complemented by pulse transformers and customized filters and winding goods. For example, Schurter's single-phase and three-phase EMC filters, with and without IEC power plugs, for PCB or chassis mounting, meet international standards and cover current ranges from 0.5 A to 115 A at voltages up to 520 V. They thus offer reliable protection against conducted interference and contribute significantly to the electromagnetic compatibility of complex systems. The portfolio also includes chokes with SPICE simulation models, which enable precise circuit design even in the early development phase. For control cabinet applications, Schurter offers DIN rail components.25.07.2025 10:30:00Julnews_2025-08-15_13.jpg\images\news_2025-08-15_13.jpghttps://www.schurter.com/en/products-and-solutions/components/emcschurter.com
Shielded Power Inductor SeriesBourns announced its SRP4020T series shielded powe...12504Product ReleaseShielded Power Inductor SeriesBourns announced its SRP4020T series shielded power inductors. This series features a carbonyl powder core with "excellent thermal stability and magnetic performance", making it suitable for demanding environments. Its shielded construction suppresses magnetic interference and enhances Electromagnetic Compatibility (EMC). Offered in a (4.45 x 4.0 mm&sup2;), low-profile (1.8 mm) package, the SRP4020T Series supports operating temperatures up to +150 °C. The inductance range for this series is from 0.47 to 10 &micro;H.24.07.2025 11:30:00Julnews_2025-08-15_14.jpg\images\news_2025-08-15_14.jpghttps://www.bourns.com/news/press-releases/pr/2025/07/24/bourns-introduces-shielded-power-inductor-series-designed-with-carbonyl-powder-core-delivering-high-saturation-current-capabilitybourns.com
Large-size Ferrite Cores with different ShapesTDK Corporation added large-size ferrite cores wit...12486Product ReleaseLarge-size Ferrite Cores with different ShapesTDK Corporation added large-size ferrite cores with different core shapes. These are used in a range of industrial applications such as motor drives, EV charging stations, various railway/traction applications, power transformers, welding, medical, uninterruptible power supplies (UPS), solar inverters, and other renewable energy applications. These cores allow for optimizing magnetic design for efficiency and thermal performance. The standardized large-size core program contains E, U, I, PM, and PQ cores in the N27, N87, N88, N92, N95, and N97 power materials. Accessories like coil former and mounting hardware are available.24.07.2025 11:30:00Julnews_2025-08-01_14.jpg\images\news_2025-08-01_14.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-various-large-size-ferrite-cores-with-different-shapes-for-a-wide-range-of-industrial-applications-/3616864tdk-electronics.tdk.com
Company Location in South Africa addedAnother Würth Elektronik branch opened in Brackenf...12478Industry NewsCompany Location in South Africa addedAnother Würth Elektronik branch opened in Brackenfell, Western Cape, South Africa. The location operates under the name Wurth Electronics South Africa (Pty.) Ltd and will serve local customers, but will also be responsible for the markets of Botswana, Mauritius, Namibia, Tanzania and Zambia. Ahmet Çakir, who also heads the branch in Turkey, will take over the management of the new location, under the leadership of Rob Sperring, Vice President for Southern Europe, Middle East and Africa. The Wurth Electronics South Africa (Pty.) Ltd team currently consists of six employees. However, it will soon be expanded. The official opening ceremony for the new location will take place in early 2026. Four EMC seminars held by Würth Elektronik in South Africa's two largest cities, Cape Town and Johannesburg, have already been completed.24.07.2025 11:00:00Julnews_2025-08-01_6.jpg\images\news_2025-08-01_6.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=New-location-in-South-Africawe-online.com
Collaboration with SiC-based PHEV Platform expandedonsemi announced an expanded collaboration with Sc...12511Industry NewsCollaboration with SiC-based PHEV Platform expandedonsemi announced an expanded collaboration with Schaeffler through a new design win using onsemi's next-generation EliteSiC product line of silicon carbide MOSFETs. The onsemi solution will power the Schaeffler traction inverter for a leading global automaker's plug-in hybrid electric vehicle (PHEV) platform. The semiconductor company claims that "this silicon carbide-based solution offers the lowest on-state resistance to provide highest peak power compared to other SiC solutions in its class". This next step builds on the existing long-term collaboration between onsemi and Schaeffler (formerly Vitesco Technologies), extending the companies' multi-year collaboration in electric mobility solutions.24.07.2025 09:00:00Julnews_2025-09-01_4.jpg\images\news_2025-09-01_4.jpghttps://www.onsemi.com/company/news-media/press-announcements/en/onsemi-and-schaeffler-expand-collaboration-with-new-elitesic-based-phev-platformonsemi.com
Simplifying Reverse Battery Polarity and Overvoltage Protection in Automotive ArchitecturesDiodes Incorporated introduced the AP74502Q and AP...12507Product ReleaseSimplifying Reverse Battery Polarity and Overvoltage Protection in Automotive ArchitecturesDiodes Incorporated introduced the AP74502Q and AP74502HQ automotive-compliant 80 V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications include ADAS, body control modules, infotainment systems, exterior lighting, and USB charging ports. They also include a load disconnect function in case of overvoltage and undervoltage events, while they are suitable for all 12 V, 24 V and 48 V systems. The AP74502Q and AP74502HQ controllers also support input voltages as low as 3.2 V for operation even during severe cold crank conditions. Both devices share a peak gate turn-off sink current of 2.3 A, enabling rapid turn-off of the external N-channel MOSFETs when required, for example, during overvoltage or undervoltage events. When the charge pump is enabled, the operating quiescent current is 62 &micro;A, and 1 &mirco;A in disabled mode. The AP74502Q features a peak gate source current, typically 60 &micro;A, which provides a smooth start-up with inherent inrush current control. Both, AP74502Q and AP74502HQ are available in the industry-standard SOT28 package with an operating temperature range from -40 °C to +125 °C.23.07.2025 14:30:00Julnews_2025-08-15_17.jpg\images\news_2025-08-15_17.jpghttps://www.diodes.com/about/news/press-releases/80v-low-iq-ideal-diode-controllers-from-diodes-incorporated-simplify-reverse-battery-polarity-and-overvoltage-protection-in-modern-automotive-architecturesdiodes.com
Power MOSFETs in specific PackageToshiba Electronics Europe launched two N-channel ...12519Product ReleasePower MOSFETs in specific PackageToshiba Electronics Europe launched two N-channel power MOSFETs, the 80 V TPM1R908QM and the 150 V TPM7R10CQ5. These latest offerings use Toshiba's SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations. This SOP Advance(E) package is said to "mark a substantial improvement over Toshiba's existing SOP Advance(N) package, reducing package resistance by approximately 65 % and thermal resistance by approximately 15 %". The 80 V TPM1R908QM exhibits a reduction in drain-source on-resistance of approximately 21 % and channel-case thermal resistance of approximately 15 % when compared to Toshiba's existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150 V TPM7R10CQ5 achieves approximately 21% lower R<sub>DS(ON)</sub> and approximately 15% lower R<sub>th(ch-c)</sub> than Toshiba's existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification. Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.20.07.2025 10:30:00Julnews_2025-09-01_12.jpg\images\news_2025-09-01_12.jpghttps://toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/12v-300v-mosfets/articles/n-channel-power-mosfets-for-industrial-equipment-reduce-on-resistance-by-using-sop-advance-e-package.htmltoshiba.semicon-storage.com
Professorship to Accelerate Wide Bandgap Semiconductor ResearchGlobal semiconductor manufacturer Nexperia and the...12474Industry NewsProfessorship to Accelerate Wide Bandgap Semiconductor ResearchGlobal semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices. In his inaugural lecture, titled "Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future," Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon. The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.18.07.2025 07:00:00Julnews_2025-08-01_2.JPG\images\news_2025-08-01_2.JPGhttps://www.nexperia.com/about/news-events/news/nexperia-and-tu-hamburg-launch-endowed-chair-in-power-electronics-to-drive-energy-efficient-innovationnexperia.com
Two-Component Thermal Gap Filler and CIP MaterialThe Chomerics Division of Parker Hannifin Corporat...12489Product ReleaseTwo-Component Thermal Gap Filler and CIP MaterialThe Chomerics Division of Parker Hannifin Corporation introduced a two-component (2k) dispensable thermal gap filler and cure-in-place (CIP) material offering 3.5 W/m-K thermal conductivity. THERM-A-GAP&trade; CIP 35E provides an alternative to hard-curing dispensable materials and an improvement over application methods associated with thermal gap pads. After curing, THERM-A-GAP CIP 35E serves as a low-hardness (50 Shore 00) gap pad that conforms to irregular shapes and maintains effective contact without transmitting compressive forces to adjacent electronics. Its ability to cure into complex geometries is suited for the cooling of multi-height components on a printed circuit board (PCB) without the expense of a moulded sheet. The product also offers vibration damping attributes, while the dielectric strength is 8 kVAC/mm (ASTM D149 test method) and the volume resistivity is 10<sup>13</sup> &ohm;cm (ASTM D257). At 1000 kHz its dielectric constant is specified 8.0 dielectric (ASTM D150); and the dissipation factor at 1,000 kHz is 0.009 (Chomerics CHO-TM-TP13).17.07.2025 14:30:00Julnews_2025-08-01_17.jpg\images\news_2025-08-01_17.jpghttps://ph.parker.com/us/en/product-list/therm-a-gap-cip-35e-thermally-conductive-cure-in-place-compoundph.parker.com
Partnership on Silicon Carbide Solutions for Power ManagementMicrochip Technology announced that under a new pa...12476Industry NewsPartnership on Silicon Carbide Solutions for Power ManagementMicrochip Technology announced that under a new partnership agreement with Delta Electronics the companies will collaborate to use Microchip’s mSiC&trade; products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future. Delta intends to leverage Microchip’s experience and technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure. This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support including technical training as well as insight into R&D activities and early access to product samples.17.07.2025 09:00:00Julnews_2025-08-01_4.jpg\images\news_2025-08-01_4.jpghttps://www.microchip.com/en-us/about/news-releases/products/microchip-enters-into-partnership-agreement-with-delta-electronicsmicrochip.com
150 V and 200 V MOSFETs “with industry-leading Figures of Merit”iDEAL Semiconductor’s SuperQ&trade; technology has...12483Product Release150 V and 200 V MOSFETs “with industry-leading Figures of Merit”iDEAL Semiconductor’s SuperQ&trade; technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. SuperQ is said to be “the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices”. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices while operation at up to 175 °C junction temperature. The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 m&ohm; MOSFET. It is available immediately in a 5 x 6 mm<sup>2</sup> PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability. The 200 V family includes the iS20M6R1S1T, a 6.1 m&ohm; MOSFET in a 11.5 x 9.7 mm<sup>2</sup> TOLL package. This has an R<sub>DSon</sub> of 6.1 m&ohm;, which is claimed to be “10% lower than the current industry leader and 36% lower than the next best competitor”. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages. 250V, 300 V and 400 V MOSFET platforms are promised to be coming soon.17.07.2025 08:30:00Julnews_2025-08-01_11.jpg\images\news_2025-08-01_11.jpghttps://idealsemi.com/ideals-superq-technology-powers-into-production-reveals-150-v-and-200-v-mosfets-with-industry-leading-figures-of-merit/idealsemi.com
Bipolar Junction Transistors in clip-bonded FlatPower PackagesNexperia expanded its bipolar junction transistor ...12505Product ReleaseBipolar Junction Transistors in clip-bonded FlatPower PackagesNexperia expanded its bipolar junction transistor (BJTs) portfolio by introducing the MJPE-series with 12 MJD-style BJTs in clip-bonded FlatPower (CFP15B) packaging. Compared to traditional DPAK-packaged MJD transistors, MJPE-parts in CFP15B deliver significant board space savings and cost advantages without compromising performance. Six of these devices are automotive-qualified (e.g. MJPE31C-Q) and six industrial-grade types (e.g. MJPE44H11), with V<sub>CEO</sub> ratings of 50 V, 80 V, and 100 V, and collector currents of 2 A, 3 A, and 8 A. Both NPN and PNP variants are available. Used in diverse applications such as power supplies for battery management systems, on-board chargers in electric vehicles, and backlighting for video displays, the CFP15B-packaged BJTs maintain equivalent thermal performance (up to 175 °C operation for automotive applications) while offering a 53% smaller soldering footprint. Furthermore, the clip technology of the CFP15B package supports specific mechanical robustness while also enhancing the electrical and thermal performance of these devices.16.07.2025 12:30:00Julnews_2025-08-15_15.jpg\images\news_2025-08-15_15.jpghttps://www.nexperia.com/about/news-events/press-releases/nexperia-brings-the-benefits-of-clip-bonded-flatpower-packaging-to-bipolar-junction-transistorsnexperia.com
30 Years of Openair-Plasma TechnologyIn early July Plasmatreat celebrated the 30th anni...12475Industry News30 Years of Openair-Plasma TechnologyIn early July Plasmatreat celebrated the 30th anniversary of the patent application for its Openair-Plasma technology with its Technology Days 2025 at the headquarters in Steinhagen, Germany. Due to its process stability, efficiency, environmental friendliness, and ease of integration into production environments, the Openair-Plasma technology has changed numerous industrial processes worldwide. More than 200 guests and 16 industry partners joined the Plasmatreat team for the celebration. This plasma technology is used to give materials special properties for further processing including ultra-fine cleaning, activation, reduction, and coatings for a wide range of industrial applications. Plasmatreat technology is currently used in more than 100 automotive and battery production applications. E. g. PlasmaPlus PT-Bond technology serves as an environmentally friendly bonding agent that is often used to bond different materials in a stable, weather-resistant way. Eight interactive workshops complemented the event. For example, the workshop "REDOX effect: Reduction to High-Performance Coatings” showed how oxidized and contaminated metal surfaces are cleaned in the semiconductor industry to meet the strictest standards for manufacturing electronic components. Plasma systems and reduction were also demonstrated live.16.07.2025 08:00:00Julnews_2025-08-01_3.jpg\images\news_2025-08-01_3.jpghttps://www.plasmatreat.com/en/news-and-stories/news-and-press/detail/30-years-of-atmospheric-pressure-plasma-technologyplasmatreat.com
TVS Diodes cut Clamping VoltageLittelfuse launched the 5.0SMDJ-FB TVS Diode Serie...12490Product ReleaseTVS Diodes cut Clamping VoltageLittelfuse launched the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. This series incorporates foldback technology, which delivers up to 15% lower clamping voltage (V<sub>C</sub>) compared to traditional solutions, while maintaining Breakdown Voltage (V<sub>BR</sub>) above the Reverse Standoff Voltage (V<sub>R</sub>). It is a drop-in replacement to legacy 5.0SMDJ series with the same DO-214AB (SMC) footprint. These devices protect DC power lines across a variety of demanding applications, including Power over Ethernet (PoE) systems, AI and data center servers, ICT equipment power supplies and industrial DC power distribution.15.07.2025 15:30:00Julnews_2025-08-01_18.jpg\images\news_2025-08-01_18.jpghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-tvs-diodes-cut-clamping-voltage-by-up-to-15-for-dc-line-protectionlittelfuse.com
1 W Current Sense Chip Resistor SeriesStackpole Electronics expanded the CSSH Series of ...12485Product Release1 W Current Sense Chip Resistor SeriesStackpole Electronics expanded the CSSH Series of current sense chip resistors with a 0805 version for high power density applications. This component is designed to be used in power modules, frequency converters, battery management systems, as well as automotive and EV controls. The CSSH0805 delivers 1 W power handling in a 0805 footprint. With resistance values as low as 0.5 milliohm and TCR from 50 to 100 ppm, it matches the performance of larger 1206 and 2010 resistors.14.07.2025 10:30:00Julnews_2025-08-01_13.png\images\news_2025-08-01_13.pnghttps://www.seielect.com/news/en/20250714%20cssh0805.pdfseielect.com