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| Discrete Power Solutions | RECOM introduces power ICs and SMD transformers, e... | 13814 | Product Release | Discrete Power Solutions | RECOM introduces power ICs and SMD transformers, enabling customers to design their own discrete DC/DC isolated power supplies. The range includes three different topology transformer drivers – flyback, push-pull, and full bridge, integrated and external MOSFET secondary side rectification solutions, and a range of standard sub-miniature SMD transformers that cover the most common input/output and isolation voltages. The RVPWxxx series flyback power ICs are available with either integrated switches or with a gate drive output for an external MOSFET. These wide input voltage range regulated ICs have three different feedback modes on the same pin: Primary Side Regulation, where the output is regulated by monitoring the primary side waveform to avoid the need for an optocoupler, Secondary Side Regulation, where the output is regulated by optocoupler feedback to maintain the isolation, or Direct DC monitoring for non-isolated applications. The RVPxxx Push-Pull and Full-Bridge transformer drivers are available in DFN2*2 packages. They incorporate all the timing circuits and overcurrent monitoring functions. The heart of any isolated DC/DC converter is the transformer, so RECOM offers a standard range of SMD transformers with isolations from 1.5 kV<sub>DC</sub> up to 5 kV<sub>AC</sub> ; custom transformers according to individual specifications are also possible. RECOM also offers the RVSxxx range of secondary side rectification solutions including a fully integrated full bridge rectifier IC in a DFN2*2 package, a self-powered external MOSFET rectifier solution that can operate either high side or low side, and a bidirectional integrated rectifier designed for battery cell charging/discharging. | 22.04.2026 11:30:00 | Apr | news_2026-05-01_12.jpg | \images\news_2026-05-01_12.jpg | https://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-unlocks-discrete-power-design-466.html?4 | recom-power.com |
| 5th Generation SiC MOSFETs | ROHM has developed the latest device of its EcoSiC... | 13811 | Product Release | 5th Generation SiC MOSFETs | ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs for high-efficiency power applications. This technology is suitable for e. g. xEV traction inverters, onboard chargers (OBCs), DC/DC converters and electric compressors in automotive applications as well as for industrial equipment where it fits into power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos etc. The ON resistance of the 5th Generation SiC is reduced by approximately 30 % during high temperature operation (T<sub>j</sub> = 175 °C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). | 21.04.2026 08:30:00 | Apr | news_2026-05-01_9.jpg | \images\news_2026-05-01_9.jpg | https://www.rohm.com/news-detail?news-title=2026-04-21_news_sic-mosfet&defaultGroupId=false | rohm.com |
| Dynamic High Power DC E-Load | ITECH launched the IT8100A/E Series Ultra-Dynamic ... | 13813 | Product Release | Dynamic High Power DC E-Load | ITECH launched the IT8100A/E Series Ultra-Dynamic High Power DC E-Load. Designed for high power density, the IT8100A/E series deliver up to 7.2 kW in a compact 3U chassis (150 V model) and can scale to 1.8 MW through fiber-optic master-slave paralleling, meeting high-voltage and high-current testing requirements. Available in 60 V, 150 V, 600 V, and 1200 V ranges, with standalone power from 2 kW to 86.4 kW, the series features several operating modes – including dynamic, sequence, and advanced loading functions – for performance in applications such as Al server power supplies, power modules, fuel cells, EV charging station, solar array and power electronics. It offers a current slew rate up to 150 A/μs per unit. With 1.5× short-time overloading capability (≤60 s, Ta ≤ 25 °C), it covers transient peak power demands during testing and enables system sizing based on typical operating power rather than peak power, meeting the requirements of power modules, battery packs, and other devices under surge and extreme operating conditions. | 20.04.2026 10:30:00 | Apr | news_2026-05-01_11.jpg | \images\news_2026-05-01_11.jpg | https://www.itechate.com/en/news/high-power-dc-electronic-load-IT8100AE.html | itechate.com |
| President of ESIA appointed | The General Assembly of the European Semiconductor... | 13805 | People | President of ESIA appointed | The General Assembly of the European Semiconductor Industry Association (ESIA) elected Erik Rein, Executive Vice President and Board Member Mobility Electronics responsible for semiconductor business at Bosch, as the organisation’s new President. He succeeds Michael Budde, who has stepped down from the ESIA Presidency following his recent change of responsibilities within Bosch. Erik Rein has worked in semiconductor-based mobility solutions, manufacturing, purchasing, and quality management. In his position, he is responsible for Bosch’s global semiconductor and sensor business. | 20.04.2026 08:00:00 | Apr | news_2026-05-01_3.png | \images\news_2026-05-01_3.png | https://www.eusemiconductors.eu/esia | eusemiconductors.eu/esia |
| Expanded Capacity for Validation and Services in China | Würth Elektronik eiSos Group opened the Laboratory... | 13807 | Industry News | Expanded Capacity for Validation and Services in China | Würth Elektronik eiSos Group opened the Laboratory Phase II at its Asia Quality Design Center (QDC Asia) in Shenzhen, China. Established in August 2008, QDC Asia spans approximately 4,700 m², with a dedicated testing area of 1,700 m² housing over 300 pieces of high-precision testing equipment. Operating in strict compliance with ISO/IEC 17025 and ISO/IEC 17043 standards, the center holds accreditations as a testing laboratory, a proficiency testing provider, and a lab recognized by VDE (TDAP), UL (WTDP), and IEC (CTF2). Initially focused on pre-shipment product inspection for production, the Laboratory has evolved into a comprehensive testing center offering a wide range of services including product incoming inspection testing, design change validation, reliability testing, product conformity judgment, material compliance, failure analysis, etc. However, with existing lab space maximized and approaching saturation, expansion became imperative to support the Group’s growing business needs. The newly added 352 m² laboratory is a strategic response to this demand. Primarily designed for environmental and electrical performance testing, the facility is equipped with an energy-efficient VFD chiller featuring magnetic bearing technology, as well as a scalable electrical system capable of meeting peak load demands. A total of 38 testing devices will be gradually deployed across phases to align with actual business needs: 19 units on the ground floor, followed by an additional 19 on a second level. The expansion thus lays the foundation for a significant increase in capacity: In future, throughput for environmental testing is expected to grow by 170 percent compared to current capacity. | 16.04.2026 10:00:00 | Apr | news_2026-05-01_5.jpg | \images\news_2026-05-01_5.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=laboratory-qdc-shenzhen | we-online.com |
| Automotive Power Module with integrated MCU and Gate Driver for Three-Phase BLDC Motor Control | Toshiba Electronics Europe begins engineering samp... | 13810 | Product Release | Automotive Power Module with integrated MCU and Gate Driver for Three-Phase BLDC Motor Control | Toshiba Electronics Europe begins engineering sample shipments of the AEC-Q100 compliant TB9M030FG, an addition to the SmartMCD™ series that integrates a microcontroller (MCU) and motor driver. The product is suitable for low-speed, sensorless field-oriented control (FOC) of BLDC motors in automotive applications, including electric water pumps, oil pumps, fans, and blowers. Sensorless control of three-phase BLDC motors presents challenges in accurately detecting rotor position at low speeds, creating a strong demand for high-performance sensorless FOC technology capable of delivering stable control from a standstill. The TB9M030FG integrates a 32-bit MCU with an Arm® Cortex®-M0 core, 64 kB flash memory and an additional 12 kB of ROM and 4 kB of RAM. The gate driver controls and drives the N-channel power MOSFETs for three-phase BLDC motor operation. The product also features a vector engine co-processor, a LIN transceiver and a power system that can operate at automotive battery levels. The device is housed in a QFP48 package, measuring 9 mm × 9 mm. Toshiba’s sensorless control technology enables position FOC control from zero speed through the low-speed range when used with PM-Synchronous motors, i.e. three-phase BLDC motors with magnetic anisotropy in the rotor (L<sub>d</sub> ≠ L<sub>q</sub>), allowing the generation of reluctance torque due to differences in magnetic reluctance within the motor. Compared with the conventional high-frequency injection method, in which the voltage (or current) signal is superimposed and injected into the motor to detect rotor position, this approach eliminates noise caused by harmonic injection and also leads to quieter motor operation. | 16.04.2026 07:30:00 | Apr | news_2026-05-01_8.jpg | \images\news_2026-05-01_8.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/04/automotive-20260416-1.html | toshiba.semicon-storage.com |
| Desktop Power Supply for Medical and Industrial Applications | Mascot has introduced the 4320 desktop power suppl... | 13815 | Product Release | Desktop Power Supply for Medical and Industrial Applications | Mascot has introduced the 4320 desktop power supply designed for use across medical, industrial and professional environments. Delivering up to 80 W of output power, it features a universal input range of 90 - 264 VAC and is available with fixed output voltages spanning 12, 16, 24, 48 and 64 V as standard, with a 5 V version and other user-defined outputs available on request. The switching frequency is approximately 65 kHz. Both short-circuit and thermal protection are incorporated to protect critical power supply components from electrical anomalies that have the potential to cause failure or damage, a particularly important attribute in medical and other reliability-critical applications. 4320 is medically certified to IEC 60601-1 edition 3.1 and 3.2, while also meeting IEC 60601-1-11 requirements for home healthcare environments. EMC performance is aligned with IEC/EN 60601-1-2 edition 4.1 for safe and stable operation in crowded electronic environments. In addition, the 4320 complies with IEC 62368-1 and IEC 60335-1, making it suitable for a wide range of household, AV and ICT applications. The 4320 features a standard 2-pin IEC 60320 (C8) input, with options for 3-pin connectors or fixed mains cords. On the DC side, exchangeable plug solutions are available, supported by standard cord sets or user-specific configurations, enabling straightforward adaptation for different use cases. Furthermore, Mascot offers customisation capabilities for the 4320 series. Accessories for the 4320 series include a wall-mount bracket, 2-pin AC cords, exchangeable DC plugs (individual or in packs) and exchangeable DC push-on terminals. | 15.04.2026 12:30:00 | Apr | news_2026-05-01_13.jpg | \images\news_2026-05-01_13.jpg | https://www.mascot.no/news/introducing-the-new-4320-desktop-power-supply | mascot.no |
| Intelligent Power Modules from India | In presence of India’s Prime Minister, Mr. Narendr... | 13804 | Industry News | Intelligent Power Modules from India | In presence of India’s Prime Minister, Mr. Narendra Modi, Alpha and Omega Semiconductor (AOS) has officially inaugurated its Kaynes Semicon’s OSAT facility in Sanand, Gujarat. Now AOS’ proprietary IPM5 manufacturing process is implemented at the Sanand facility. The IPM5 (Intelligent Power Modules) integrate 17 different dies into a single package, providing the core "intelligence" for next-generation motor controls and energy-efficient appliances. From groundbreaking to product delivery it took 14 months to establish the facility. | 14.04.2026 07:00:00 | Apr | news_2026-05-01_2.png | \images\news_2026-05-01_2.png | https://www.aosmd.com/news/alpha-and-omega-semiconductor-announces-commencement-production-intelligent-power-module-ipm5 | aosmd.com |
| 5 kW GaN 3-Phase Inverters for Robotics and Light Evs | Efficient Power Conversion (EPC) introduced the EP... | 13809 | Product Release | 5 kW GaN 3-Phase Inverters for Robotics and Light Evs | Efficient Power Conversion (EPC) introduced the EPC9186HC2 and EPC9186HC3 evaluation boards, two high-performance 3-phase BLDC motor drive inverter platforms designed for applications including robotics, industrial automation, light electric vehicles, electric scooters, forklifts, agricultural machinery, battery-powered mobility systems, and high-power drones. Supporting motor drive systems up to 5 kW, the boards enable engineers to evaluate compact, high-efficiency inverter architectures based on 100 V EPC2361 eGaN® FET technology. The EPC9186HC2 and EPC9186HC3 are based on the EPC9186 platform that was released earlier and have the same hardware architecture. They have another power stage made up of EPC2361 GaN devices that improves conduction performance and allows for higher-current and lower cost operation in motion-control environments. The EPC9186HC2 integrates two EPC2361 eGaN FETs in parallel per switch position, while the EPC9186HC3 uses three devices in parallel, further reducing equivalent on-resistance and improving efficiency at higher load currents. The boards support phase currents up to 150 A<sub>RMS</sub>, depending on the selected current-sensing configuration, and PWM switching frequencies up to 120 kHz, enabling evaluation of high-density motor drive solutions with fast switching transitions and improved system responsiveness. The inverter platforms operate across a DC input range up to 76 V and feature switching behavior with dv/dt around 6 V/ns, helping reduce torque ripple and acoustic noise in precision motor drive applications. The boards integrate key functions required for three-phase inverter evaluation - including gate drivers, high-bandwidth phase-current sensing, voltage monitoring, housekeeping power supplies, and protection features such as over-current detection and input undervoltage lockout. | 14.04.2026 06:30:00 | Apr | news_2026-05-01_7.jpg | \images\news_2026-05-01_7.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3296/epc-releases-5-kw-gan-3-phase-inverters-for-robotics-and-light-evs | epc-co.com |
| PCIM Expo & Conference 2026: Discover the Future of Power Electronics | From 9 – 11 June 2026, Nuremberg will once again b... | 13803 | Event News | PCIM Expo & Conference 2026: Discover the Future of Power Electronics | From 9 – 11 June 2026, Nuremberg will once again become the international hub for power electronics. The PCIM Expo & Conference brings together experts from around the world to discuss the latest developments and future trends in the industry. The event provides a comprehensive overview of the innovative products, solutions, and trends that will help shape the power electronics industry in the future. This year, for the first time, a new stage will shine a light on the topic of artificial intelligence and data centers. The E-Mobility & Energy Storage Stage will focus on current and future developments in power electronics for use in electromobility and energy storage. At the PCIM Expo 2026, the University Research Zone will offer exclusive access to the most recent findings from power electronics research. Each day will feature different universities and research institutes offering insights into the latest developments from the world of research. Across approximately 40,000 square meters of exhibition space, more than 650 companies from 27 countries will be showcasing their newest and most tried-and-tested technologies. | 13.04.2026 06:00:00 | Apr | news_2026-05-01_1.JPG | \images\news_2026-05-01_1.JPG | https://pcim.mesago.com/nuernberg/en/press/press-releases/pcim-press-releases/Preview-2026.html | pcim.mesago.com |
| OCP and Current/OS: Strategic Alliance to Enable DC Adoption in AI Data Centers | The Current/OS Foundation highlights the progress ... | 13808 | Industry News | OCP and Current/OS: Strategic Alliance to Enable DC Adoption in AI Data Centers | The Current/OS Foundation highlights the progress of its strategic collaboration with the Open Compute Project Foundation (OCP), concluded through the signing of an alliance aimed at accelerating the development of Direct Current-powered data center architectures. The foundation aims to drive industry alignment around DC solutions for AI-driven infrastructures, reflecting a shared ambition to transform digital infrastructures into more efficient, sustainable, and high-performance systems, and to establish new standards for the electrical architecture of next-generation data centers. The collaboration is structured around several key deliverables including a comprehensive white paper, Data Center Facility – Low Voltage Direct Current Power Distribution, detailing architectures and best practices for scalable AI infrastructure. It is complemented by a training program available in the OCP Academy to educate engineers and professionals on open-standard system design and deployment and it also includes a formal specification document defining technical requirements, interfaces, and interoperability standards to enable vendor-agnostic innovation. The alliance between Current/OS and OCP aims to promote the adoption of open standards for DC architectures in data centers and to unite an ecosystem of industrial, technological, and academic stakeholders around this transition, addressing the growing challenges of power consumption, performance, and sustainability. The two organizations will work to reduce electrical conversion stages, increase power density for AI workloads, and enhance infrastructure resilience while simplifying electrical architectures. The initiative also aligns with open and interoperable standards to foster innovation, industrial adoption, and compatibility across the ecosystem. | 09.04.2026 11:00:00 | Apr | news_2026-05-01_6.jpg | \images\news_2026-05-01_6.jpg | https://currentos.org/ | currentos.org |
| Power Modules for Traction Inverters | StarPower expands its portfolio with half-bridge a... | 13818 | Product Release | Power Modules for Traction Inverters | StarPower expands its portfolio with half-bridge and three-phase bridge modules for electric drive systems. The solutions are based on the company’s latest chip generation. For example, a family of transfer-molded half-bridge modules designed for traction inverters in power classes starting from 250 kW. These modules are available in both silicon and silicon carbide technologies and utilize the latest Gen3 trench IGBT generation as well as second-generation SiC MOSFETs with conduction losses reaching down to 1.3 mμ R<sub>DS(on)</sub> at module level. Si<sub>3</sub>N<sub>4</sub> AMB substrates combined with a pin-fin baseplate design enhance heat dissipation. The product range includes 750 V and 1200 V variants, featuring Gen3 IGBT modules rated at 750 A<sub>rms</sub> and 900 A<sub>rms</sub>, as well as 450 A<sub>rms</sub> and 500 A<sub>rms</sub>. SiC versions are available with R<sub>DS(on)</sub> values of 1.4 mΩ and 1.0 mΩ, as well as 1.8 mΩ and 1.3 mΩ. In addition, StarPower expands its portfolio of encapsulated three-phase bridge modules for traction inverters in the low- and medium-power range. These modules use SiC MOSFETs, offering losses starting from 2 mΩ R<sub>DS(on)</sub>. The combination of Si<sub>3</sub>N<sub>4</sub> AMB substrates and a pin-fin baseplate enhance thermal robustness; an integrated current sensor is optionally available. The modules are offered in 750 V and 1200 V versions, including Gen3 IGBT variants rated at 350 A<sub>rms</sub>, 380 A<sub>rms</sub>, and 300 A<sub>rms</sub>. SiC versions are available with R<sub>DS(on)</sub> values of 2.3 mΩ and 2.0 mΩ, as well as 3.0 mΩ and 2.0 mΩ. | 08.04.2026 15:30:00 | Apr | news_2026-05-01_16.jpg | \images\news_2026-05-01_16.jpg | https://www.starpowereurope.com/en | starpowereurope.com |
| Senior Vice President and GM appointed | OmniOn Power (OmniOn) has appointed Brian Korn as ... | 13806 | People | Senior Vice President and GM appointed | OmniOn Power (OmniOn) has appointed Brian Korn as the new Senior Vice President and General Manager of its Core Products business. Korn brings more than 20 years of experience in power products spanning board mounted, front end, and specialized power solutions for data center, telecom, and network infrastructure applications. At OmniOn Power, Korn will be responsible for defining the strategic direction, driving the operational execution, and overseeing the long-term performance of the company’s Core Products business. Korn joins OmniOn from Advanced Energy, where he held senior leadership roles overseeing embedded and front end power products for key growth industries. Earlier in his career, he led product and business teams at Cisco Systems, Equinix, Sun Microsystems, and Silicon Graphics. | 08.04.2026 09:00:00 | Apr | news_2026-05-01_4.jpg | \images\news_2026-05-01_4.jpg | https://www.omnionpower.com/about/news/press-releases/omnion-power-announces-new-svp-and-gm-of-core-products-business-brian-korn | omnionpower.com |
| Strategic Agreement for Critical Metals Recovery | Indium Corporation® has executed a long-term o... | 13786 | Industry News | Strategic Agreement for Critical Metals Recovery | Indium Corporation® has executed a long-term offtake framework agreement with Flash Metals USA Inc., a wholly owned subsidiary of Metallium Limited (MTM), for the supply of critical metals recovered using Metallium’s Flash Joule Heating technology. Under the agreement, Indium will purchase metals recovered from secondary raw materials and electronic scrap through Flash Metals USA’s recycling operations, including gallium, germanium, copper, tin, gold, and indium. The agreement, with an initial term of 10 years with automatic five-year renewal options, establishes a robust and diversified supply chain for U.S.-based recovery of strategic metals. Indium Corporation operates its own metals and compounds reclaim and recycle program that provides specialized recycling services for the electronics, semiconductor, display, battery, and other specialty material industries. | 03.04.2026 07:00:00 | Apr | news_2026-04-15_2.jpg | \images\news_2026-04-15_2.jpg | https://www.indium.com/press-releases/indium-corporation-announces-strategic-agreement-for-domestic-critical-metals-recovery/ | indium.com |
| 100 V Integrated GaN Power Stages | Efficient Power Conversion (EPC) has introduced it... | 13800 | Product Release | 100 V Integrated GaN Power Stages | Efficient Power Conversion (EPC) has introduced its next generation of 100 V integrated GaN power-stage ICs – EPC23108, EPC23109, EPC23110 and EPC23111 – targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology. Each IC integrates the high-side and low-side eGaN® FETs together with the gate driver and level shifting circuitry in a thermally enhanced QFN package. They support operation up to 100 V, with load current capability of 35 A (EPC23108, EPC23109) and 20 A (EPC23110, EPC23111), enabling reliable high-frequency switching performance. The control interface has an active-low fast-shutdown and standby input with a built-in 65 kΩ pull-up, which makes it work with industrial logic standards. As a result, designers can connect the devices directly to standard controllers without having to do any extra signal conditioning. This makes the design easier and makes sure that the devices work the same way on all platforms. Operational safety is improved through deterministic shutdown behavior. When standby is asserted, PWM switching stops immediately and the driver enters a low-quiescent-current state from the VDRV supply. If the driver supply is lost, an active gate pull-down ensures both the high-side and low-side FETs remain off, maintaining system control during fault conditions and enhancing reliability. The family also supports continuous 100% duty-cycle operation, which is necessary for full-torque and uninterrupted conduction modes. | 02.04.2026 13:30:00 | Apr | news_2026-04-15_16.jpg | \images\news_2026-04-15_16.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3283/epc-expands-the-offering-of-100-v-integrated-gan-power-stages-optimized-for-motor-drives-with-improved-control-and-protection | epc-co.com |
| Measurement Day Nuremberg | Experience an exclusive day dedicated to power and... | 13791 | Event News | Measurement Day Nuremberg | Experience an exclusive day dedicated to power and high-end measurement technology on April 22, 2026, in Nuremberg at the Max Morlock Stadium. The event features practice-oriented technical presentations, direct exchange with experts, and a tabletop exhibition. | 02.04.2026 12:00:00 | Apr | news_2026-04-15_7.JPG | \images\news_2026-04-15_7.JPG | https://www.datatec.eu/de/en/m-day-nuremberg-2026?shopSwitchInitiated=1 | datatec.eu |
| Prototyping Controller for Wide-Bandgap Power Converters | Imperix introduced the B-Box 4, a Rapid Control Pr... | 13794 | Product Release | Prototyping Controller for Wide-Bandgap Power Converters | Imperix introduced the B-Box 4, a Rapid Control Prototyping (RCP) system for power electronics. Featuring a proprietary architecture optimized for low-latency operation, the controller delivers advanced control loop speeds and signal fidelity. The device aims to accelerate experimental prototyping activities in both industrial and academic research environments. The B-Box 4 enables 20 MSamples/s synchronous sampling at all analog inputs simultaneously. This captures the full high-frequency content of current ripple or medium-frequency waveforms, and it permits the direct visualization of waveforms without extra instrumentation. Using oversampling, the B-Box 4 is not only a control system but also a monitoring and debugging tool, usable directly from the readily available measurements. It provides a PWM resolution of 250 ps, which is useful for ultra-fast switching applications, especially for techniques relying on phase shift control such as within medium-frequency converters. B-Box 4 can execute the control loop of simple systems in under 2 μs, directly from the CPU. The device is fully integrated into an ecosystem of products designed to accelerate prototyping in power electronics. | 02.04.2026 07:30:00 | Apr | news_2026-04-15_10.jpg | \images\news_2026-04-15_10.jpg | https://imperix.com/imperix-news/the-next-generation-of-power-electronics-hardware-is-here/ | imperix.com |
| High-Voltage Safety Testing Platform | Vitrek launched the V10X electrical safety hipot t... | 13817 | Product Release | High-Voltage Safety Testing Platform | Vitrek launched the V10X electrical safety hipot tester. Designed for automated, connected production environments, the V10X delivers up to 30 kV AC output, and a 100 pA leakage resolution. It provides a single-platform solution for safety testing of appliances, EV components, cable assemblies, power distribution systems, lighting products, and medical electrical equipment. It is designed for connected production environments where safety testing must generate traceable data, integrate with factory networks, and scale with evolving standards. A graphical touchscreen enables test creation, real-time charting, and built-in PDF and CSV report generation, and barcode support is already integrated. Built-in networking, SCPI-compliant automation interfaces, and control of up to 1,600 switch matrix channels make the system ready for Industry 4.0 production lines. The V10X meets multiple global compliance standards, and is backed by ISO 17025-accredited calibration services. | 01.04.2026 14:30:00 | Apr | news_2026-05-01_15.jpg | \images\news_2026-05-01_15.jpg | https://vitrek.com/press-release-vitrek-introduces-v10x-a-future-ready-high-voltage-safety-testing-platform/ | vitrek.com |
| GaN Half-Bridge Drivers provide smart Protection | STMicroelectronics has announced two half-bridge g... | 13797 | Product Release | GaN Half-Bridge Drivers provide smart Protection | STMicroelectronics has announced two half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, and miniaturization to power and motion-control applications. The STDRIVEG212 and STDRIVEG612 deliver tightly controlled 5 V gate-drive signals to enhanced-mode GaN HEMTs, powered from a high-side voltage up to 220 V or 600 V respectively. The drivers contain high-side and low-side 5 V linear regulators (LDOs), a high-side bootstrap diode, and protection including under-voltage lock-out (UVLO) in a QFN package. An integrated fast-startup voltage regulator stabilizes the supply voltage for the driver output stage, enabling consistent gate control, while an embedded comparator turns off both GaNs on detecting overcurrent. Smart shutdown (SmartSD) automatically holds the switches off long enough to cool down and a fault pin provides overcurrent, overtemperature and UVLO reporting. The propagation delay of 50 ns is matched between high side and low side, with high-side start-up time of 5 μs and ±200 V/ns dV/dt transient immunity, permitting high rotational speeds. The integrated LDOs have high current capability and provide separate sink and source paths, sinking up to 1.8 A / 1.2 Ω, and sourcing 0.8 A / 4.0 Ω. With 20V-tolerant logic inputs and a dedicated shutdown pin the STDRIVEG212 and STDRIVEG612 are able to save power during inactive periods. The EVLSTDRIVEG212 evaluation board is suitable for both devices. | 01.04.2026 10:30:00 | Apr | news_2026-04-15_13.jpeg | \images\news_2026-04-15_13.jpeg | https://www.st.com/content/st_com/en/campaigns/innovative-gan-gate-drivers-for-advanced-efficiency-and-reliability-asp-mcmotdri.html | st.com |
| AI-ready UPS Systems Validation | Unlike traditional workloads with slow and predict... | 13787 | Industry News | AI-ready UPS Systems Validation | Unlike traditional workloads with slow and predictable power variations, modern AI creates "pulsed loads", where processors switch rapidly between idle and full capacity. Power demand can swing from 0 % to 100 % and back in milliseconds, creating erratic "on-off" cycles that place power infrastructure under severe stress. Uninterruptible power supply (UPS) systems must now also function as a dynamic power conditioner capable of reacting to these variable load swings in real time. If it cannot manage these pulses effectively, they can be reflected back to the grid or backup generators, threatening overall system stability or even breakdown. Vertiv provides critical infrastructure technologies, including large power converters. Its Power Center in Bologna/Italy needed to validate new Input Power Smoothing algorithms for its Vertiv™ Trinergy™ UPS systems. These intelligently draw energy from the UPS batteries during peak pulses, shielding the upstream generator from the erratic behavior of an AI load. Veritiv created a fully integrated measurement ecosystem from Yokogawa, anchored by the WT5000 Precision Power Analyzer, DL950 ScopeCorder, GM10 Data Acquisition System, and tied together by the IS8000 software platform. This configuration allows measuring currents of up to 5000 A, where the WT5000 Precision Power Analyzer provides primary power analysis. The DL950 ScopeCorder captures the transient behavior of the "pulsed loads" using its 16 channels. Connecting these domains is Yokogawa’s IS8000 software, which synchronizes the instruments using the IEEE 1588 Precision Time Protocol (PTP). | 01.04.2026 08:00:00 | Apr | news_2026-04-15_3.jpg | \images\news_2026-04-15_3.jpg | https://tmi.yokogawa.com/de/news/briefs/2026/vertiv-partners-with-yokogawa-for-ai-ready-ups-systems-validation/ | tmi.yokogawa.com |
| Heat Sinks for Power Electronics and IC Components | Würth Elektronik launches a comprehensive heat sin... | 13798 | Product Release | Heat Sinks for Power Electronics and IC Components | Würth Elektronik launches a comprehensive heat sink portfolio, divided into three specialized product groups: The WE-HTO heat sinks are designed for THT-TO packages like the TO-220 and TO-247. WE-HIC includes classic finned heat sinks for components with flat surfaces, such as CPUs or DC/DC converters. The WE-HTOI and WE-HICI variants are supplied from the factory pre-coated with thermal interface material. This eliminates the air gap between the component and the heat sink, thus maximizing cooling performance. As a special service, Würth Elektronik provides technical support, detailed heat-sink characteristics, simulation options, as well as customer-specific modifications. The WE-HTO heat sinks are available in various shapes and with different surface structures to enable tailored cooling performance. These include variants with curved sheet metal and with cooling fins, which dissipate more heat through their increased surface area. In addition, matching M3 screws, nuts, and insulating sleeves for mounting on the WE-HTO and WE-HTOI heat sinks can also be ordered. WE-HIC is available in two variants: with continuous and interrupted fins. The design with continuous fins is designed for applications in which the airflow is aligned with the fins. The variant with interrupted fins, however, is well suited when airflow in the installation environment cannot be clearly defined. Heat sinks for ICs are available in sizes ranging from 20 × 20 to 40 × 40 mm². | 31.03.2026 11:30:00 | Mar | news_2026-04-15_14.jpg | \images\news_2026-04-15_14.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=heat-sinks | we-online.com |
| High-Voltage Hardware-Based E-Fuse Reference Design | Microchip offers a fully hardware-based e-fuse ref... | 13801 | Product Release | High-Voltage Hardware-Based E-Fuse Reference Design | Microchip offers a fully hardware-based e-fuse reference design, which is optimized for high-voltage bidirectional applications, eliminating the need for an onboard microcontroller. Designed for both AC and DC systems, it supports 400 V DC and 800 V DC configurations and features bidirectional current blocking using mSiC® MOSFETs. Protection is built in, with configurable current trip profiles for rapid-fault response. Its modular architecture separates the control and power boards. The power board utilizes high-performance 700 V or 1200 V mSiC MOSFETs, while the control board includes a suite of discrete components for precise monitoring and protection. Thermal management is optimized with SiC devices in the D2PAK-7L XL package for efficient heat dissipation. With overload (1 ms shutdown) and short-circuit protection (1 μs shutdown), resettable operation and an ambient operating temperature range from -40 °C to +85 °C, this reference design is suited for applications such as battery disconnect units (BDU), on-board chargers (OBC), DC/DC converters, cabin heaters and AC compressor inverters. | 30.03.2026 14:30:00 | Mar | news_2026-04-15_17.jpg | \images\news_2026-04-15_17.jpg | https://www.microchip.com/ | microchip.com |
| 2000 V / 40 A 4-Phase Boost Module | Inventchip Technology introduced the IV3B20023BA2,... | 13793 | Product Release | 2000 V / 40 A 4-Phase Boost Module | Inventchip Technology introduced the IV3B20023BA2, 2000 V 4-phase boosts in a 3B module package. Each phase consists of a 2000 V 23 mΩ SiC MOSFET and a 40 A diode connected in a boost converter topology. The product is aiming 1500 V solar photovoltaic (PV) system applications. The four boost phases are divided into two electrically isolated groups. Each group has two boosts with a common power ground and a separate boost output, plus an NTC for DBC temperature sensing. With such a topology arrangement, the module maximizes the flexibility of the circuit configuration for PV systems with a single, two or four DC inputs. The 3B module has the same dimensions as the standard Easy-3B and provides a minimum 10 mm creepage from terminals to terminals and terminals to heatsink. The difference is that the 3B uses a metal base instead of a bare DBC. The metal base allows the module to be screwed on a heatsink with a stable fixing force and avoids the module’s plastic case aging issue which could lead to the reduction or loss of the fixing force during temperature cycling tests or real applications. This 2000 V MOSFET is based on Inventchip’s second generation SiC technology. The co-packed 2000 V SiC diode was designed to carry a surge current over 5 times of its rated DC current. Compared to the flying-cap topology currently used in 1500 V PV systems, the 2000 V boost converter simplifies PV MPPT circuit design e. g. by eliminating external capacitors. | 30.03.2026 06:30:00 | Mar | news_2026-04-15_9.png | \images\news_2026-04-15_9.png | https://www.inventchip.com.cn/En/sic%20module | inventchip.com |
| EMV 2026 successfully concluded | This year’s Expo in Cologne featured 124 exhibitin... | 13790 | Event News | EMV 2026 successfully concluded | This year’s Expo in Cologne featured 124 exhibiting companies, covering 4,700 square meters of exhibition space and attracting 2,414 visitors. The event included an extensive training program with 42 lectures and 20 workshops, with a total of 571 participants. Fifty percent of exhibitors and 30 percent of visitors and participants traveled from numerous countries. The event once again combined further education with networking and hands-on experience with the latest product developments and measurement solutions in the field of electromagnetic compatibility. For the first time, the EMV offered its own session comprising three live demonstrations of real measurement setups, sources of interference, coupling mechanisms, and countermeasures. This format particularly met the needs of developers, test engineers and users with strong practical experience. The next EMV will take place in Stuttgart from 27 to 29 April 2027. | 26.03.2026 11:00:00 | Mar | news_2026-04-15_6.jpg | \images\news_2026-04-15_6.jpg | https://emv.mesago.com/stuttgart/en/press/press-releases/emv-press-releases/final-report-2026.html | emv.mesago.com |
| TLVR Quad-Phase Module exceeding 2 A/mm² | Infineon Technologies announced a high-current-den... | 13796 | Product Release | TLVR Quad-Phase Module exceeding 2 A/mm² | Infineon Technologies announced a high-current-density quad-phase power module with TLVR (trans-inductor voltage regulator) inductors. The TDM24745T is an OptiMOS™ quad-phase power module designed to meet the rapidly growing power requirements of next-generation AI accelerators. Integrating four power stages, a TLVR inductor and decoupling capacitors into a 9 x 10 x 5 mm³ package. The module delivers a current density exceeding 2 A/mm². The TLVR architecture can reduce the required output capacitance by up to 50 percent. TDM24745T offers up to 320 A peak current capability. The TDM24745T power module integrates directly into Infineon’s end-to-end AI server power delivery ecosystem, which spans everything from the grid interface to the core processor rails. | 26.03.2026 09:30:00 | Mar | news_2026-04-15_12.jpg | \images\news_2026-04-15_12.jpg | https://www.infineon.com/market-news/2026/infpss202603-076 | infineon.com |
| Materials Trends for EV Li-ion Cells: Market and Technology | IDTechEx’s market report <em>"Materials for Electr... | 13785 | Industry News | Materials Trends for EV Li-ion Cells: Market and Technology | IDTechEx’s market report <em>"Materials for Electric Vehicle Battery Cells and Packs 2026-2036: Technologies, Markets, Forecasts"</em> explores the materials that act as the foundation for the EV battery cell market and predicts that the overall cell material market for electric vehicles will reach US$154 billion by 2036. What will be the next steps? Higher percentage silicon anodes are being developed that would significantly improve cell energy density. IDTechEx predicts a shift towards silicon over graphite in premium vehicle anodes towards the end of the next decade. There is significant development of semi-solid and solid-state electrolytes to replace liquid electrolytes and enable use of higher energy density anode materials. This would require polymer, ceramic or oxide-based materials. This is expected to be limited, however, due to challenges with scaling manufacturing. Furthermore, development of LMFP, LMO and LNMO is approaching commercialization, shifting the cathode materials market away from cobalt and towards low-cost manganese. Lithium anodes enable extremely high energy density, but increases battery degradation and reduces cycle life. A small proportion of the market may shift to lithium by the end of the next decade, reducing graphite demand, especially in an anode-less cell design. Lithium anodes can also be paired with low-cost sulfur cathodes to develop high gravimetric energy density cells. This would entail a reduction in other cathode material intensities, though market share is expected to be very limited in the EV sector. | 26.03.2026 06:00:00 | Mar | news_2026-04-15_1.png | \images\news_2026-04-15_1.png | https://www.idtechex.com/en/research-report/materials-for-electric-vehicle-battery-cells-and-packs/1147 | idtechex.com |
| AEC-Q Qualified 1200 V SiC Schottky Rectifiers | Taiwan Semiconductor introduces 1200 V SiC Schottk... | 13816 | Product Release | AEC-Q Qualified 1200 V SiC Schottky Rectifiers | Taiwan Semiconductor introduces 1200 V SiC Schottky diodes with 1 A and 2 A models in SOD-128 packages. Applications benefiting from these diodes include auxiliary power supplies, bias rectification, bootstrapping circuits, gate driver bias supply, snubbers, bleeder clamp paths, PFC boost diode in low-power designs, and secondary rectification in high-frequency flybacks. All products in the SiC Schottky series are available with PPAP certification. | 25.03.2026 13:30:00 | Mar | news_2026-05-01_14.jpg | \images\news_2026-05-01_14.jpg | https://www.taiwansemi.com/en/product-filter/?category=sic-schottky-diode-57 | taiwansemi.com |
| Entering the World of Discrete Power | RECOM is rolling out a range of rectifier ICs to a... | 13771 | Industry News | Entering the World of Discrete Power | RECOM is rolling out a range of rectifier ICs to allow engineers to build their own discrete DC/DC isolated power supplies. The range includes a fully integrated full-bridge rectifier with smart output-voltage limiting, that occupies less board space than 4 diodes, and a rectification controller IC for use with an external FET, suitable for either high-side or low-side rectification. The RVS002 integrates two N-channel MOSFETs and two Schottky diodes in a DFN2∗2 package to create a low-loss full bridge rectifier capable of handling up to 3 W. A built-in intelligent voltage limiter prevents the output voltage from rising excessively under no load conditions, which increases voltage stability. When the power supply is under load, the limiter remains inactive and does not draw current. The RVSY018 synchronous rectification controller operates at up to 700 kHz, with a 30 ns turn on and 10 ns turn off characteristic, making it suitable for high-frequency power conversion applications. The rectification IC is self-powered from a single AC input allowing either high side or low side rectification. The controller supports both CCM and DCM operation and is compatible with both QR and active clamp flyback topologies. Both rectifier solutions operate over a -40 °C to +125 °C temperature range and are reflow oven solderable. | 25.03.2026 09:00:00 | Mar | news_2026-04-01_4.jpg | \images\news_2026-04-01_4.jpg | https://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-enters-the-world-of-discrete-power-462.html?4 | recom-power.com |
| Power Inductors for Automotive Electronics | With the WE-MXGA inductors Würth Elektronik presen... | 13784 | Product Release | Power Inductors for Automotive Electronics | With the WE-MXGA inductors Würth Elektronik presents AEC-Q200-certified components qualified for automotive applications. The inductors are well suited for use in lighting, infotainment systems, DC/DC converters (48 V/12 V), battery-management systems, ADAS modules, and LED headlights. The magnetically shielded SMT storage inductor WE-MXGA is particularly targeted towards high-frequency switch-mode power supplies, especially for switching regulators based on the latest GaN and SiC transistor technologies. These power inductors, which are made from pressed nanocrystalline powder core material, are available in two versions, in form factor 4020 with inductances of 0.16 to 4.7 μH and in form factor 5030 with inductances of 0.22 to 15 μH. With a current capability of up to 28 A and an operating voltage up to 80 V<sub>DC</sub>, the inductor has an operating temperature range from -40 °C up to 125 °C. | 24.03.2026 15:30:00 | Mar | news_2026-04-01_17.jpg | \images\news_2026-04-01_17.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-mxga | we-online.com |
| Global Distribution Agreement for Silicon Power MOSFETs | iDEAL Semiconductor has signed a global distributi... | 13773 | Industry News | Global Distribution Agreement for Silicon Power MOSFETs | iDEAL Semiconductor has signed a global distribution agreement with DigiKey, who will stock the semiconductor manufacturer’s products. Under the agreement, DigiKey will distribute iDEAL’s portfolio of silicon MOSFETs. The collaboration provides customers with immediate online access to inventory through DigiKey’s global e-commerce platform. iDEAL Semiconductor’s SuperQ™ technology is designed to enable improved energy efficiency and power density while maintaining the reliability, manufacturability, and cost structure of standard silicon processes. The devices are suited for applications including battery management systems (BMS), motor drives, fast charging, data center power architectures, and other high-performance power conversion systems. | 24.03.2026 11:00:00 | Mar | news_2026-04-01_6.png | \images\news_2026-04-01_6.png | https://idealsemi.com/ideal-semiconductor-signs-global-distribution-agreement-with-digikey/ | idealsemi.com |
| Partnership for SiC-based Solid-State Transformers | Infineon Technologies and DG Matrix, an expert in ... | 13769 | Industry News | Partnership for SiC-based Solid-State Transformers | Infineon Technologies and DG Matrix, an expert in Solid-State Transformer (SST) solutions, are partnering to enhance the efficiency of power conversion required to connect AI data centers and industrial power applications to the public grid. As part of the collaboration, DG Matrix will source latest-generation silicon carbide (SiC) technology from Infineon for use in its Interport™ multi-port solid-state transformer platform. A solid-state transformer replaces conventional copper and iron-based transformers. It features higher efficiency, significantly greater power density (smaller size and lower weight) and improved scalability. Compared to conventional transformers, SSTs are up to 14 times smaller and 40 times lighter. SSTs enable direct power conversion from the medium-voltage levels supplied by the grid to the low voltages required by applications such as AI data centers, electric vehicle (EV) charging infrastructure, renewable energy systems and industrial microgrids. Infineon expects that the global semiconductor market volume for SSTs could reach up to one billion US dollars in the next five years. | 24.03.2026 07:00:00 | Mar | news_2026-04-01_2.jpg | \images\news_2026-04-01_2.jpg | https://www.infineon.com/press-release/2026/infgip202603-075 | infineon.com |
| GaN-based BLDC Motor Drive Evaluation Board | Efficient Power Conversion (EPC) introduced the EP... | 13783 | Product Release | GaN-based BLDC Motor Drive Evaluation Board | Efficient Power Conversion (EPC) introduced the EPC91121 motor drive inverter evaluation board, built around the Gen-7 EPC2366 40 V eGaN® power transistor. Measuring 79 mm × 80 mm, the EPC91121 is engineered for rapid prototyping of motor drive architectures in applications such as drones, robotics, industrial automation, handheld power tools, and other compact electromechanical systems where high efficiency and power density are critical. The EPC91121 is a complete three-phase inverter solution capable of delivering up to 70 A<sub>peak</sub> (50 A<sub>RMS</sub>) output current from input voltages ranging between 18 V and 30 V, making it well-suited for battery-powered systems operating around a 24 V supply. The board integrates the key functions required for a motor drive inverter, including gate drivers, housekeeping power supplies, voltage and temperature monitoring, and current sensing. High-bandwidth current sensing on all three phases supports measurements up to ±125 A, while phase and DC-bus voltage sensing provide the feedback needed for precise monitoring and motor-control techniques such as field-oriented control (FOC) and space-vector PWM. Additional features include shaft encoder and Hall-sensor interfaces and multiple test points, simplifying system integration, measurement, and debugging during development. At the heart of the design is the 40 V EPC2366 Gen 7 eGaN FET, featuring an on-resistance of 0.84 mΩ, enabling efficient power conversion and fast switching performance. The evaluation platform supports PWM switching frequencies up to 150 kHz, significantly higher than typical silicon-based motor drives. This capability allows engineers to reduce magnetic component size, minimize switching losses, and improve overall system responsiveness. | 23.03.2026 14:30:00 | Mar | news_2026-04-01_16.jpg | \images\news_2026-04-01_16.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3275/epc-introduces-at-apec-2026-the-epc91121-bldc-motor-drive-evaluation-board-using-epc%e2%80%99s-seventh-generation-gan-technology | epc-co.com |
| Power Modules with increased Power Density | Texas Instruments (TI) unveiled isolated power mod... | 13782 | Product Release | Power Modules with increased Power Density | Texas Instruments (TI) unveiled isolated power modules, helping enable increased power density, efficiency and safety in applications ranging from data centers to electric vehicles (EVs). The UCC34141-Q1 and UCC33420 isolated power modules use TI’s IsoShield™ technology, a proprietary multichip packaging solution that achieves up to three times higher power density than discrete solutions in isolated power designs. The IsoShield technology copackages a planar transformer and an isolated power stage, offering functional, basic and reinforced isolation capabilities. It enables a distributed power architecture, helping manufacturers meet functional safety requirements by avoiding single-point failures. The result is compact packaging while delivering up to 2 W of power, enabling designs for automotive, industrial and data center applications that require reinforced isolation. Evaluation modules, reference designs and simulation models are also available. | 23.03.2026 13:30:00 | Mar | news_2026-04-01_15.png | \images\news_2026-04-01_15.png | https://www.ti.com/about-ti/newsroom/news-releases/2026/2026-03-23-ti-unveils-high-performance-isolated-power-modules-to-advance-power-density-in-data-centers-and-evs.html | ti.com |
| Isolation and Power Modules for Oscilloscopes | Yokogawa Test & Measurement introduced the 720252 ... | 13781 | Product Release | Isolation and Power Modules for Oscilloscopes | Yokogawa Test & Measurement introduced the 720252 1 MS/s 16-bit isolation module, featuring wide-range DC offset-adjust capability, and the 720301 power measurement module, delivering adequate DC/AC waveform accuracy. An evolution of the existing 701251, the 720252 covers a wider offset adjustment range than general digital oscilloscopes, enabling precise measurement of even small DC voltages and current changes from batteries or sensors. Its offset adjustment function is capable of cancelling a broad spectrum of DC bias, such as battery voltage, DC voltage, and DC current. The module also enables the simultaneous observation of DC levels and microvoltage fluctuations, as low as 1 mV/div for battery applications. In its Hi Z (>1 GΩ) input impedance mode the 720252 is capable of reducing the loading effect of the input circuit on a battery cell. Providing an all-in-one solution that correlates power consumption and generation with parameters including temperature, strain, acceleration, and sound, the module features one direct voltage input and one current sensor input, integrating with the power analysis functions of the DL950 or SL2000 for high accuracy in measuring DC and AC voltage/current waveforms. These features are supported by a user-defined measurement period for power calculations (from 0.1 ms), cycle-by-cycle power calculations, and trigger functions on power measurement parameters and harmonic orders. | 23.03.2026 12:30:00 | Mar | news_2026-04-01_14.jpg | \images\news_2026-04-01_14.jpg | https://tmi.yokogawa.com/de/news/press-releases/2026/yokogawa-test-measurement-introduces-new-isolation-and-power-modules-with-greater-dc-offset-capabilities-and-waveform-accuracy/ | tmi.yokogawa.com |
| Power Electronics, Machines and Drives Event | PEMD Global 2026 will take place on 13–15 April 20... | 13774 | Event News | Power Electronics, Machines and Drives Event | PEMD Global 2026 will take place on 13–15 April 2026 in London. The event is renowned for bringing together academics and industry experts to transform research into real world engineering solutions. Join the conference that drives innovation across the electrical and power engineering landscape and be part of the conversations shaping the future of the electrical revolution. | 23.03.2026 12:00:00 | Mar | news_2026-04-01_7.jpg | \images\news_2026-04-01_7.jpg | https://pemd.theiet.org/ | pemd.theiet.org |
| GaN Devices for Flyback Topology up to 440 W | Power Integrations introduced a flyback solution e... | 13777 | Product Release | GaN Devices for Flyback Topology up to 440 W | Power Integrations introduced a flyback solution extending the power range of flyback converters to 440 W, well beyond the limits that traditionally required more complex resonant and LLC topologies. The TOPSwitchGaN™ flyback IC family unites the company’s PowiGaN™ technology with its TOPSwitch™ IC architecture. This solution aims to reduce complexity, eliminate heat sinks in many cases, shorten design time, improve manufacturability and lower total system cost. TOPSwitchGaN ICs provide 92 percent efficiency across the load range, from 10 percent to 100 percent load, and clearly beats ErP regulations at less than 50 mW power consumption for standby and off modes. The device does this without the need for synchronous rectification. PowiGaN switches deliver much lower R<sub>DS(ON)</sub> than silicon, significantly increasing the power capability of flyback converters. These devices incorporate 800 V PowiGaN switches which can operate at switching frequencies of up to 150 kHz. No-load consumption is well below 50 mW at 230 V<sub>AC</sub> including line sense, and up to 210 mW of output power is available for 300 mW input at 230 V<sub>AC</sub> to run housekeeping functions when units are in stand-by mode. These ICs are available in two styles. For ultra-slim designs, low profile eSOP™-12 surface mount packaging enables 135 W (85 – 265 V<sub>AC</sub>) to be delivered without a heatsink for applications such as appliances. The vertical orientation of the eSIP™-7 package minimizes PCB footprint and has a thermal impedance equivalent to a TO-220-packaged part. Several reference design materials are available. | 23.03.2026 08:30:00 | Mar | news_2026-04-01_10.jpg | \images\news_2026-04-01_10.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-Extends-Flyback-Topology-to-Enable-440-W-Offering-Simpler-Alternatives-to-Resonant-Power-Designs/default.aspx | power.com |
| Half-Bridge 1200 V MOSFET Modules | SemiQ has launched the QSiC™ Dual3, a family... | 13795 | Product Release | Half-Bridge 1200 V MOSFET Modules | SemiQ has launched the QSiC™ Dual3, a family of 1200 V half-bridge MOSFET modules for motor drives in data center cooling systems, grid converters in energy storage systems, and industrial drivers. The family enables the creation of power converters and includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments. Two of the family’s six devices have an R<sub>DS(on)</sub> of just 1 mΩ and a power density of 240 W/in³ from its 62 x 152 mm package. The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die having been screened using wafer-level gate-oxide burn-in tests exceeding 1,450 V. | 23.03.2026 08:30:00 | Mar | news_2026-04-15_11.jpg | \images\news_2026-04-15_11.jpg | https://semiq.com/1200-v-qsic-dual3-modules-enable-power-converters-with-industry-leading-conversion-efficiency-and-power-density/ | semiq.com |
| 600 V Super Junction Power MOSFETs | Toshiba Electronics has added the DTMOSVI 600 V HS... | 13802 | Product Release | 600 V Super Junction Power MOSFETs | Toshiba Electronics has added the DTMOSVI 600 V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600 V Series featuring a super junction structure. The seven additional products are available in TO-247, TOLL and DFN8×8 packages, providing engineers with options that balance power handling, thermal performance, switching efficiency, and system miniaturization capabilities for diverse application needs. A product highlight is the TK058V60Z5, which achieves an drain-source on-resistance (R<sub>DS(ON)</sub>) of 50 mΩ (typ.) in a DFN8×8 package. Applications include switched-mode power supplies (SMPS) for data center servers, uninterruptible power supplies (UPS), and photovoltaic power conditioners. These products employ lifetime control technology, which intentionally introduces defects into the diode to enhance carrier recombination speed. This technique enhances the reverse-recovery performance of the body diode, a critical requirement for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600 V series without a built-in high-speed recovery diode, the reverse recovery time (t<sub>rr</sub>) has been reduced by approximately 60 %, and the reverse recovery charge (Q<sub>rr</sub>) by approximately 85 % (measurement conditions: V<sub>DD</sub> = 400 V, V<sub>GS</sub> = 0 V, I<sub>DR</sub> = 20 A, -di<sub>DR</sub>/dt= 100 A/μs, T<sub>a</sub> = 25 °C). Both G0 SPICE and G2 SPICE models are available as well as an online circuit simulator. | 19.03.2026 15:30:00 | Mar | news_2026-04-15_18.jpg | \images\news_2026-04-15_18.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/03/mosfet-20260319-1.html | toshiba.semicon-storage.com |
| Distributor and Semiconductor Manufacturer cooperate on holistic Design Suite | DigiKey announces the availability of an enhanced ... | 13792 | Industry News | Distributor and Semiconductor Manufacturer cooperate on holistic Design Suite | DigiKey announces the availability of an enhanced eDesignSuite experience, developed through a collaboration with STMicroelectronics (ST) and Ultra Librarian. The tool environment allows engineers to design, simulate, refine and confidently validate their projects using ST components and to purchase their entire bill of materials (BOM) directly from DigiKey in a few steps. The eDesignSuite, developed by ST, is a free, publicly accessible, no-license-required online design platform that provides a unified workflow for power management, signal conditioning, NFC/RFID applications and other design domains. The collaboration with DigiKey and Ultra Librarian expands the platform’s capabilities by tightly integrating component models, simulation flows, BOM management and multi-CAD exports. The eDesignSuite experience now also provides e.g. the following capabilities: Integrated thermal and electrical simulation support through SIMPLIS/SIMetrix, enabling deeper performance verification and design confidence. Real-time BOM refinement with live impact analysis, allowing engineers to immediately see how parameter changes affect design choices and performance. Seamless export of schematics and BOMs to multiple CAD environments, including OrCAD, Altium and Eagle. Application-specific design support, including power management design, thermal-electrical simulation, signal conditioning and NFC/RFID calculators. | 19.03.2026 13:00:00 | Mar | news_2026-04-15_8.jpg | \images\news_2026-04-15_8.jpg | https://www.digikey.com/en/news/press-releases/2026/march/digikey-collaborates-with-stmicroelectronics-and-ultra-librarian | digikey.com |
| Full-Brick 48 V AC/DC Supply with up to 94 % Peak Efficiency | Advanced Energy Industries has extended its range ... | 13799 | Product Release | Full-Brick 48 V AC/DC Supply with up to 94 % Peak Efficiency | Advanced Energy Industries has extended its range of AIF full-brick board-mounted AC/DC power supplies for telecom and industrial applications with the AIF13WAC, 48 V 600 W, with a peak efficiency of up to 94 %. The AIF13WAC integrates full digital control and monitoring (via PMBus) and active current sharing along with internal inrush limiting functionality. Compared to the previous generation, the AIF13WAC increases output power by 20 % in the same form-factor and therefore is compatible with all accessories created for previous generations, including case-kits, heatsinks and EMI filters. For contact-cooled, fanless applications such as IP-sealed designs, there is now an upgrade path to deliver greater power than the previous generation of 500 W products. The AIF13WAC accepts a input voltage range of 90 to 264 V<sub>AC</sub>, and delivers a 13 A, 48 V<sub>DC</sub> nominal output alongside a 10 V (250 mA) auxiliary output. It can run with up to three units in parallel. The input EMI filter, hold-up capacitors, and output capacitors are the only external components required for the realization of a successful application design. | 19.03.2026 12:30:00 | Mar | news_2026-04-15_15.jpg | \images\news_2026-04-15_15.jpg | https://www.advancedenergy.com/en-us/about/news/press/advanced-energy-launches-aif13wac,-600-w-full-brick-48-v-ac-dc-supply-with-94-efficiency/ | advancedenergy.com |
| Report on GaN Semiconductor Reliability and Robustness | Efficient Power Conversion (EPC) has released its ... | 13789 | Industry News | Report on GaN Semiconductor Reliability and Robustness | Efficient Power Conversion (EPC) has released its Phase 18 Reliability Report, providing insights into eGaN device reliability. The report builds on previous work by closing the gap between lab-generated reliability testing and real-world device performance across mission profiles. It introduces additional methodologies to better predict device lifetime under application-specific stress conditions, shaped through close collaboration with customers and supported by peer-reviewed research and international conference publications. The report emphasizes the significance of comprehending the fundamental wear-out mechanisms in GaN HEMTs and presents a quantitative methodology for estimating the overall device lifetime based on the predominant stress conditions experienced during operation. The methodology allows for more accurate lifetime predictions across a wide range of applications by combining different stress factors, like voltage, current, temperature, and duty cycles. Phase 18 is similar to earlier reports, but it goes much deeper into the main wear-out mechanisms. These include the reliability of gates in pGaN structures, the ability to handle stress and overvoltage (robustness), the maximum current density, and the wear-out of thermomechanical devices in both chip-scale and QFN-packaged formats. The report also looks at reliability in dynamic switching conditions and high-frequency operation, which gives us a better idea of how things work in real life. In addition, the report introduces mission-specific reliability evaluations, including motor drive applications characterized by rapid current transients and varying load conditions. A customized testing methodology is presented to emulate these application-specific stress profiles, demonstrating the robustness of EPC’s GaN technology under such conditions. | 19.03.2026 10:00:00 | Mar | news_2026-04-15_5.jpg | \images\news_2026-04-15_5.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3274/ | epc-co.com |
| Power Modules designed for harsh Environments | Microchip Technology announced its BZPACK mSiC®... | 13778 | Product Release | Power Modules designed for harsh Environments | Microchip Technology announced its BZPACK mSiC® power modules, designed to meet HV-H3TRB (High Humidity High Voltage High Temperature Reverse Bias) standards. Available in topologies including half-bridge, full-bridge, three-phase and PIM/CIB configurations, they are suited for deployments in industrial and renewable energy applications. BZPACK modules feature a baseplate-less design with Press-Fit, solderless terminals and optional pre-applied Thermal Interface Material (TIM). The MB and MC families of mSiC MOSFETs are targeted towards both industrial and automotive applications, with AEC-Q101 qualified options available. These devices support common gate-source voltages V<sub>GS</sub> ≥ 15 V and are available in TO-247-4 Notch and die form (waffle pack). | 19.03.2026 09:30:00 | Mar | news_2026-04-01_11.jpg | \images\news_2026-04-01_11.jpg | https://www.microchip.com/en-us/about/news-releases/products/new-bzpack-msic-power-modules-designed-for-demanding-applications | microchip.com |
| Production Site in Singapore | Wevo is expanding its presence in the Asia-Pacific... | 13788 | Industry News | Production Site in Singapore | Wevo is expanding its presence in the Asia-Pacific region with a production site in Singapore. Located in the Tuas industrial area, the facility will serve as a key hub for supplying customers with locally manufactured polyurethane systems that offer proven solutions across a wide range of industries. This facility will feature identical production processes and quality standards to those of the company’s headquarters in southern Germany. In addition to a fully integrated production line, the building in the Tuas industrial area also offers ample storage and packaging capacity. The start of production is scheduled for the third quarter of 2026. The initial focus will be on the polyurethane portfolio, including polyurethane potting compounds, adhesives and sealants for electronics manufacturing – for instance through dispensing under atmospheric pressure or vacuum. Wevo products protect sensitive components against chemicals, vibration, foreign matter, dust, humidity and high temperatures. | 19.03.2026 09:00:00 | Mar | news_2026-04-15_4.jpg | \images\news_2026-04-15_4.jpg | https://www.wevo-chemie.de/en/news-press/detailpage/new-polyurethane-production-site | wevo-chemie.de |
| PCIM Europe 2026 puts AI in the Spotlight | From 9 to 11 June 2026, the PCIM Expo & Conference... | 13770 | Event News | PCIM Europe 2026 puts AI in the Spotlight | From 9 to 11 June 2026, the PCIM Expo & Conference will once again take place in Nuremberg/Germany. With over 650 exhibitors and more than 500 presentations, this power electronics event will offer a comprehensive program for trade visitors. With the new AI & Data Centers Stage, this year’s trade fair and conference program will focus on the topic of artificial intelligence and data centers for the first time. The escalating energy needs of modern data centers are driving demand for high-performance, energy-efficient, and sustainable solutions. With the AI & Data Centers Stage, the PCIM Expo 2026 places a distinct emphasis on two of the most important future trends in power electronics. This stage brings together expert presentations and best practices addressing the growing influence of artificial intelligence and the escalating energy demands of modern data centers. PCIM will cover the entire power electronics value chain, ranging from power semiconductors, test and measurement technologies, and automation solutions to materials for different fields of application, including the aviation industry. Last year the event welcomed 685 exhibiting companies, 16,500 visitors, and more than 800 conference participants from the realms of science and industry. | 19.03.2026 08:00:00 | Mar | news_2026-04-01_3.JPG | \images\news_2026-04-01_3.JPG | https://pcim.mesago.com/nuernberg/en/press/press-releases/pcim-press-releases/pressekonferenz-munich.html | pcim.mesago.com |
| New Date for PCIM India | The PCIM Asia New Delhi Conference has been postpo... | 13772 | Event News | New Date for PCIM India | The PCIM Asia New Delhi Conference has been postponed by one day and will now take place from 10 to 11 December 2026 at the Yashobhoomi Exhibition and Convention Centre (IICC) in New Delhi. This adjustment was made due to organizational conditions and enables the conference to be executed even better. Following its debut last year, the event is returning to India and inviting scientists, industry experts and emerging talent from industry and research to submit abstracts on current topics in power electronics. The call for papers is open until 21 May 2026. | 18.03.2026 10:00:00 | Mar | news_2026-04-01_5.jpg | \images\news_2026-04-01_5.jpg | https://www.pcim.in/ | pcim.in |
| Reference Designs for Three-Phase Inverters based on SiC Power Modules | ROHM has released reference designs named "REF6800... | 13780 | Product Release | Reference Designs for Three-Phase Inverters based on SiC Power Modules | ROHM has released reference designs named "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC™ brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack™ " on ROHM’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with ROHM’s SiC modules, these designs help reduce the person-hours required for device evaluation. The designs support output power levels up to the 300 kW class. Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell. Several support resources, including simulation and thermal design support, are available to facilitate quick evaluation and implementation of the products. ROHM’s comprehensive solutions can provide valuable assistance in component selection. | 17.03.2026 11:30:00 | Mar | news_2026-04-01_13.jpg | \images\news_2026-04-01_13.jpg | https://www.rohm.com/news-detail?news-title=2026-03-17_news_reference-design&defaultGroupId=false | rohm.com |
| HV IBC Reference Designs for 800 VDC Architectures in AI Data Centers | Infineon Technologies introduces two high-voltage ... | 13812 | Product Release | HV IBC Reference Designs for 800 V<sub>DC</sub> Architectures in AI Data Centers | Infineon Technologies introduces two high-voltage Intermediate Bus Converter (HV IBC) reference designs to help accelerating the transition to AI server power architectures powered by +/-400 V and 800 V DC. The reference designs address two different architectures: the 800-V<sub>DC</sub>-to-50-V design serves as an intermediate stage for downstream 48-V IBC modules, while the 800- V<sub>DC</sub> -to-12-V design enables direct conversion for compact server boards. For custom implementations, the company offers the digital controller XDPP1188-200C, which supports flexible output voltages of 48 V, 24 V, or 12 V. The 800 V<sub>DC</sub> or +/-400 V to 50 V HV IBC reference design demonstrates more than 98 percent efficiency at full load. Built using Infineon’s solution-optimized high-voltage and medium-voltage CoolGaN switches, EiceDRIVER™ gate drivers, and a PSOC™ microcontroller, it consists of two 3 kW 400 V to 50 V converter building blocks, which are configured in an input-series-output-parallel (ISOP) arrangement. The approach scales to 6 kW TDP and supports up to 10.8 kW for 400 μs, using a planar PCB integrated transformer with multiple synchronous rectifier stages and soft switching across all load conditions to reduce EMI. The implementation has a 60 mm × 60 mm × 11 mm form factor and achieves an exceptional 2.5 kW/in³ power density. The second reference design is an ultra-thin HV IBC demo board, which converts an 800 V<sub>DC</sub> bus voltage directly to a 12 V intermediate rail. The design delivers 6 kW TDP and supports up to 10.8 kW for 400 μs. | 17.03.2026 09:30:00 | Mar | news_2026-05-01_10.jpg | \images\news_2026-05-01_10.jpg | https://www.infineon.com/market-news/2026/infpss202603-067 | infineon.com |
| 25 V and 80 V MOSFETs meeting AI Server Power Demands | Alpha and Omega Semiconductor (AOS) introduced its... | 13776 | Product Release | 25 V and 80 V MOSFETs meeting AI Server Power Demands | Alpha and Omega Semiconductor (AOS) introduced its AONC40202 25 V MOSFET and AONC68816 80 V MOSFET that are available in DFN 3.3 × 3.3 double-sided cooling source-down packaging. The devices are designed to support intermediate bus converter (IBC) DC/DC applications in AI Servers. AONC40202 and AONC68816 feature a top-clip design for the exposed drain contact. The packaging technology used in the AONC40402 25 V and AONC68816 80 V MOSFETs features a large top clip, which enables a thermal resistance rate value of R<sub>thc-top(max)</sub> to be 0.9 °C/W. The AONC40202 has a continuous current capability of up to 405 A, with a maximum junction temperature of 175 ° C. | 17.03.2026 07:30:00 | Mar | news_2026-04-01_9.jpg | \images\news_2026-04-01_9.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-25v-and-80v-mosfets-state-art-packaging-meets | aosmd.com |
| DC/DC Converter: Direct Conversion from 800 V to 6 V | Navitas Semiconductor announced a DC/DC power deli... | 13779 | Product Release | DC/DC Converter: Direct Conversion from 800 V to 6 V | Navitas Semiconductor announced a DC/DC power delivery board (PDB) powered by GaNFast™ technology, enabling direct conversion from 800 V to 6 V in one power stage. This solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays to support NVIDIA AI infrastructure. This 6 V output architecture is said to improve system performance versus other already released PDBs by cutting the VRM 8Voltage Regulator Modules conversion ratio in half. Navitas’s 800 V–6 V DC/DC PDB targets to deliver up to 96.5% peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³. Approximately 20 % thinner than a mobile phone, its profile allows for close integration with the GPU board. The primary side employs 16 × 650 V GaNFast FETs in the latest DFN8×8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of small passives and planar magnetics. | 16.03.2026 10:30:00 | Mar | news_2026-04-01_12.jpg | \images\news_2026-04-01_12.jpg | https://navitassemi.com/navitas-debuts-revolutionary-800-v-6-v-power-delivery-board-at-nvidia-gtc-2026/ | navitassemi.com |
| Positive Trade Show Echo | Around 36,000 visitors went to Nuremberg/Germany i... | 13768 | Event News | Positive Trade Show Echo | Around 36,000 visitors went to Nuremberg/Germany in order to attend the trade show "embedded world 2026", which took place from 10 to 12 March, 2026. This is a growth of more than 13 percent compared to the previous year. With its range of topics and technical exchanges, the embedded world Conference once again sent a signal about the industry’s strength in 2026. Technical presentations, scientific insights and dialogue between experts were an integral part of the embedded world conference, which is targeted to the developer community. Of course, all these embedded systems need power supplies, and that’s why major power companies showed their solutions in Nuremberg. The next embedded world in Nuremberg will take place from 16 to 18 March 2027. | 13.03.2026 06:00:00 | Mar | news_2026-04-01_1.jpg | \images\news_2026-04-01_1.jpg | https://www.embedded-world.de/en/press/press-releases/2026/03/embedded-world-2026-closing-report | embedded-world.de |
| 200 V MOSFETs in Multiple Standard Power Packages | iDEAL Semiconductor expanded its SuperQ™ 200... | 13775 | Product Release | 200 V MOSFETs in Multiple Standard Power Packages | iDEAL Semiconductor expanded its SuperQ™ 200V MOSFET portfolio with the iS20M5R5S1T, which is available in the industry-standard TOLL package, and the iS20M6R3S1P, available in the TO-220 package. The iS20M5R5S1T achieves a maximum R<sub>DS(on)</sub> of just 5.5 mΩ, while the iS20M6R3S1P delivers a maximum R<sub>DS(on)</sub> of 6.3 mΩ. Versions in D2PAK-7L (iS20M5R5S1H) and TOLT (iS20M5R5S1TC) are also planned. Typical applications are e.g. in next-generation power systems and motor-drive applications as well as switched-mode power supplies (SMPS), secondary-side synchronous rectification, and high-current industrial and battery-powered systems. The V<sub>GS(th)</sub> is specified with +/- 0.5V. | 10.03.2026 06:30:00 | Mar | news_2026-04-01_8.png | \images\news_2026-04-01_8.png | https://idealsemi.com/industry-lowest-rdson-200v-mosfets-in-multiple-standard-power-packages-available-from-ideal-semiconductor/ | idealsemi.com |
| Strengthening its Electrification Business | Danfoss has acquired 100% ownership of power elect... | 13754 | Industry News | Strengthening its Electrification Business | Danfoss has acquired 100% ownership of power electronics leader Semikron Danfoss, moving from a joint venture to fully owned subsidiary of Danfoss enabling Danfoss to accelerate the company’s electrification business. As part of the continued portfolio optimization, Danfoss intends to divest their automotive business. Danfoss announces the acquisition of the remaining shares in Semikron Danfoss, increasing its ownership from 62% to 100% and gaining full ownership of the global leader in power electronics. The acquisition reflects Danfoss’ refocused electrification priorities and is aligned with the execution of the LEAP 2030 strategy. "As part of our strategy, LEAP 2030, we are prioritizing investments in high-value opportunities, such as electrification, within our core businesses. The full acquisition of Semikron Danfoss allows us to fully accelerate our investments in technology leadership, in advanced power modules, and industrial-scale power electronics solutions that create maximum value for our customers," said Kim Fausing, President & CEO of Danfoss. With full ownership, Danfoss moves from a joint setup to full autonomy. This strengthens Danfoss’ ability to serve customers with industrial-scale power electronics solutions and sharpens focus on core businesses including industrial drives, renewables, data centers, energy storage solutions, off-highway and construction as well as commercial on-highway vehicles beyond electric passenger cars. | 09.03.2026 06:00:00 | Mar | news_2026-03-15_1.png | \images\news_2026-03-15_1.png | https://www.danfoss.com/en/about-danfoss/news/cf/danfoss-strengthens-its-electrification-business-with-full-ownership-of-semikron-danfoss/ | danfoss.com |
| 1500 V Relays for Energy Storage Systems and EV Fast-Chargers | OMRON is extending its contactor-replacement relay... | 13767 | Product Release | 1500 V Relays for Energy Storage Systems and EV Fast-Chargers | OMRON is extending its contactor-replacement relay portfolio with the G9KJ to save weight and cost in high-voltage energy storage systems and electric-vehicle fast chargers. With 25 A make current and 5 A carry (0 A break) current, the PCB-mount relays have ratings optimized for pre-charging circuits at DC-link voltage up to 1500 V. As pre-charge control switches, the OMRON G9KJ relays divert capacitive inrush currents through a high resistance to relieve stress on components handling the main charging current, including the main contactor, DC link capacitor, and trip protection. With a critical role in preventing nuisance faults or unwanted system resets, and enhancing long-term reliability of the power stage, G9KJ relays permit greater board integration and faster assembly than traditional contactors. The 37.2 mm × 25.5 mm × 17 mm type 1A (SPST NO) relays address the growing reliance on high-voltage DC switching capabilities as the energy transition redefines grid infrastructures and life essentials like mobility. The contact resistance is 100 mΩ (max.) while the coil power is specified with 530 mW. | 04.03.2026 13:30:00 | Mar | news_2026-03-15_14.jpg | \images\news_2026-03-15_14.jpg | https://components.omron.com/eu-en/products/relays/G9KJ | components.omron.com |
| 240 W USB-C PD 3.2 Reference Design for Battery-powered Motor Control Applications | Arrow Electronics and Infineon have announced REF_... | 13764 | Product Release | 240 W USB-C PD 3.2 Reference Design for Battery-powered Motor Control Applications | Arrow Electronics and Infineon have announced REF_ARIF240GaN, a 240 W USB Power Delivery (PD) 3.2 reference design for battery-powered motor control applications that require high performance and power efficiency in a compact form factor. This design complements the existing portfolio of joint reference design solutions from Arrow and Infineon, supporting the ongoing migration of customer designs to USB-C technology. REF_ARIF240GaN is specifically designed to support the launch of EZ-PD™ PMG1-B2, Infineon’s latest USB PD 3.2 controller, featuring up to 240 W USB sink capability and integrated buck-boost functionality in a single package. It provides developers with a ready-to-use platform for implementing high-power USB-C charging alongside efficient motor drive control features. It brings fast charging capabilities for 2- to 12-cell Li-ion battery packs, simplifying the overall design and reducing components count. Motor control functionality is delivered using Infineon’s PSOC C3, a 180MHz Arm Cortex-M33 microcontroller, and 100 V CoolGaN™ G5 transistors. Target applications include light electric vehicles (e-bikes, e-scooters and personal mobility devices), along with power tools, vacuum cleaners, kitchen appliances, garden equipment and robotics. | 04.03.2026 10:30:00 | Mar | news_2026-03-15_11.jpg | \images\news_2026-03-15_11.jpg | https://news.fiveyearsout.com/news-releases/news-details/2026/Arrow-Electronics-and-Infineon-Introduce-240W-USB-C-PD-3-2-Reference-Design-for-Battery-powered-Motor-Control-Applications/default.aspx | fiveyearsout.com |
| 3D Power Electronics Integration Conference | The 3D-PEIM 2026 conference is focused on 3D power... | 13758 | Event News | 3D Power Electronics Integration Conference | The 3D-PEIM 2026 conference is focused on 3D power electronics packaging and heterogeneous integration. Sponsored by PSMA and IEEE EPS it will convene researchers, manufacturers, and industry leaders at the Arizona State University Skysong Complex in Phoenix, Arizona, from 16th – 19th November 2026. The event will highlight emerging technologies and manufacturing approaches addressing the performance, reliability, and scalability challenges facing next-generation 3D power electronics heterogeneous integration. The 2026 technical program includes six plenary presentations, seven technical sessions, expert-led tutorials, and poster and industry partner sessions. Topics span the full integration stack, including advanced packaging and 3D integrated modules, thermal management, design modeling and simulation, reliability and failure analysis, power delivery and energy storage, passive components, and materials for advanced packaging. Together, these sessions emphasize both fundamental research and practical implementation for automotive, aerospace, data center, and energy applications. Attendees will be able to participate in guided tours of ASU’s MacroTechnology Works, a manufacturing facility. The site hosts industry-scale capabilities, including a 300 mm Fan-Out Wafer-Level Packaging pilot line. The Call for Papers is now in progress. | 04.03.2026 10:00:00 | Mar | news_2026-03-15_5.png | \images\news_2026-03-15_5.png | https://www.3d-peim.org/ | 3d-peim.org |
| Shenzhen Conference focusing on Power Electronics | The PCIM Asia Shenzhen Conference 2026 will focus ... | 13756 | Event News | Shenzhen Conference focusing on Power Electronics | The PCIM Asia Shenzhen Conference 2026 will focus on the domain of power electronics applications in artificial intelligence (AI) and data centers, and it will be held from 26 – 28 August 2026 at the Shenzhen World Exhibition and Convention Centre. This event bridges industry, academia and research across the full value chain. Held in conjunction with the exhibition, the conference links technology from the research stage to industrial deployment and has become a principal forum for tracking technical developments and building the cross-sector partnerships that carry technology from the lab to the market. Alongside data center infrastructure, the program also addresses the application of AI technologies in other aspects of the power electronics field, from renewable energy control and power quality monitoring to motor drive optimization and electric vehicle systems. The conference covers all areas of the power electronics field, from foundational research and novel technologies through to industry applications, with sessions to be organized under three thematic tracks: Power electronics core technologies, Innovative applications and system integration as well as AI and data centre energy technologies. The latter track is new for 2026 addressing AI applications across power systems, renewable energy, and electric machines. It focuses on power quality monitoring and electric vehicle systems, reflecting the areas of fastest-growing areas of technological development and industry investment. PCIM Asia Shenzhen is jointly organized by Guangzhou Guangya Messe Frankfurt and Mesago Messe Frankfurt. | 04.03.2026 08:00:00 | Mar | news_2026-03-15_3.jpg | \images\news_2026-03-15_3.jpg | https://pcimasia-shenzhen.cn.messefrankfurt.com/shenzhen/en.html | pcimasia-shenzhen.com |
| Solid-State Relay for High-Current, High-Isolation Applications | Littelfuse launched the CPC1343G OptoMOS® Soli... | 13763 | Product Release | Solid-State Relay for High-Current, High-Isolation Applications | Littelfuse launched the CPC1343G OptoMOS® Solid-State Relay, a normally open (1-Form-A) OptoMOS relay designed for high-reliability switching in demanding industrial, medical, and instrumentation applications. The device combines 900 mA continuous load current, 60 V blocking voltage, and reinforced 5,000 V<sub>RMS</sub> input-to-output isolation designed to meet stringent safety and compliance requirements in a space-saving 4-pin package. Fast switching performance - 4 ms turn-on and 1 ms turn-off - enables precise control, while a maximum LED drive current of 3 mA provides compatibility with TTL and CMOS logic without added interface circuitry. The CPC1343G supports an extended ambient temperature range of –40 °C to +105 °C; it operates with a maximum on-resistance of 0.8 Ω. Its solid-state construction eliminates mechanical wear, delivering silent, maintenance-free operation and long-term reliability where electromechanical relays often fall short. The device is offered in both through-hole DIP-4 and surface-mount configurations, simplifying PCB layout and enabling flexible manufacturing options across industrial and medical platforms. The CPC1343G is ideally suited for applications requiring high isolation, fast response, and reliable operation at elevated temperatures, including industrial control systems and automation, medical equipment requiring patient-to-equipment isolation, instrumentation, data acquisition, and multiplexing, automatic test equipment (ATE) as well as utility and smart metering systems. | 03.03.2026 09:30:00 | Mar | news_2026-03-15_10.jpg | \images\news_2026-03-15_10.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-cpc1343g-optomos-solid-state-relay-for-high-current-high-isolation-applications | littelfuse.com |
| Strategic Semiconductor Manufacturing Partnership in India | ROHM and Suchi Semicon have established a strategi... | 13757 | Industry News | Strategic Semiconductor Manufacturing Partnership in India | ROHM and Suchi Semicon have established a strategic semiconductor manufacturing partnership in India. By combining ROHM’s device technology expertise with Suchi Semicon’s manufacturing capabilities and operational execution, the companies aim to build a reliable and scalable manufacturing framework aligned with evolving industry needs. The collaboration aims to enhance supply chain resilience and provide customers with trusted manufacturing solutions. Specifically, ROHM is considering the outsourcing of back-end processes for power devices and IC products to Suchi Semicon and has begun technical evaluations toward potential mass production shipments starting in 2026. Through these efforts, ROHM aims to build, in collaboration with Suchi Semicon, an early-stage manufacturing framework in India that aligns with the expected industry ramp-up in the coming years. Furthermore, ROHM and Suchi Semicon will share a roadmap to expand the range of locally manufactured packages. | 03.03.2026 09:00:00 | Mar | news_2026-03-15_4.jpg | \images\news_2026-03-15_4.jpg | https://www.rohm.com/news-detail?news-title=2026-03-03_news_suchi&defaultGroupId=false | rohm.com |
| Full ISO/IEC 17025 Accreditation for AC Calibration Services achieved | The in-house calibration laboratory of Danisense h... | 13755 | Industry News | Full ISO/IEC 17025 Accreditation for AC Calibration Services achieved | The in-house calibration laboratory of Danisense has achieved full ISO/IEC 17025 accreditation for AC calibration services. This follows the laboratory’s ISO/IEC 17025 accreditation for DC current transducer calibration up to 21 kA, obtained in September 2022. This calibration laboratory is now equipped to handle e. g. DC calibration from 1 A to 21 kA as well as AC calibration (53 Hz) from 1 A to 1.2 kA for gain error and phase shift. This capability enables the calibration of a range of current transducers with either current or voltage outputs, supporting applications across power electronics, energy, automotive, rail, and industrial sectors. Danisense’s standard AC calibration report is performed at 10%, 25%, 40%, 55 %, 70 %, 85 % and 100 % of nominal AC current. The DC standard calibration is performed at +/- 10 %, +/- 25 %, +/- 40 %, +/- 55 %, +/- 70 %, +/- 85 %, +/- 100 % of nominal DC current. Results are presented with and without offset, with linearity analysis and statement of conformity (for Danisense transducers only) on all test points. Custom calibration points are also available. The service operates with typical lead times of approximately 10 working days, while accepting and calibrating both Danisense as well as third-party AC and DC current transducers. Customers receive a DANAK-accredited calibration certificate, ensuring that every calibration report fully complies with ISO/IEC 17025 requirements and provides complete confidence in measurement traceability and quality. All calibration services can be booked through the company’s online calibration portal, which provides e. g. with regular online and email updates during the calibration process, calibration reports, detailed order tracking etc. | 03.03.2026 07:00:00 | Mar | news_2026-03-15_2.jpg | \images\news_2026-03-15_2.jpg | https://danisense.com/ | danisense.com |
| AC/DC Power Supplies | The TAD150 series AC/DC power supply from P-DUKE i... | 13760 | Product Release | AC/DC Power Supplies | The TAD150 series AC/DC power supply from P-DUKE is designed for industrial applications, featuring specific switching topology and high-efficiency conversion. It provides 130 W (natural convection) or 150 W (forced air cooling) continuously, with up to 200 W peak power, which makes it well-suited for surge-starting and intermittent high-power applications. The devices comply with IEC/EN/UL 62368-1 safety standards and offer reinforced insulation with a 3000 V<sub>AC</sub> input-to-output isolation voltage while meeting EN55032 Class B emissions tests and comprehensive EMI/EMS testing. For high-altitude applications, the TAD150 includes an OVC III (2000 m) option. Its temperature range spans from -40 °C to +85 °C. With synchronous rectification technology it achieves efficiencies of 92-94 % and a power factor of 0.95, meeting EN61000-3-2 Class D standards. Its no-load power consumption of 0.2 W complies with energy-saving regulations. Available in Open Type, Enclosed Type, and Din Rail Type, the TAD150 supports several connector options (Molex, JST, Terminal Block) and operates with an input voltage range from 85-264 V<sub>AC</sub> / 88-370 V<sub>DC</sub> for global compatibility. The TAD150 includes multiple protections: Overvoltage Protection (110-135 % V<sub>nom</sub>), Overload Protection (160 % rated), Short Circuit Protection (Hiccup mode), and Overtemperature Protection (125 °C), while the MTBF is 724,500 hours (MIL-HDBK-217F, 25 °C full load). Typical applications are Programmable Logic Controllers, Motor Drive Systems, Electromagnetic Valve Control, Communication Equipment, Testing and Measurement. Output voltages are 12, 15, 18, 24, 28, 36, 48 and 54 V<sub>DC</sub>. | 01.03.2026 06:30:00 | Mar | news_2026-03-15_7.png | \images\news_2026-03-15_7.png | https://www.pduke.com/news_detail28_207.htm | pduke.com |
| GaN Half-Bridge Solutions including Drivers | Infineon expands its CoolGaN™ portfolio with... | 13761 | Product Release | GaN Half-Bridge Solutions including Drivers | Infineon expands its CoolGaN™ portfolio with the CoolGaN Drive HB 600 V G5 product family. The four devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration together with integrated high- and low-side gate drivers and a bootstrap diode, delivering a compact, thermally optimized power stage. By bringing key functions into one optimized package, the family lowers external component count, eases PCB layout challenges typically associated with fast-switching GaN and helps designers shorten development cycles while achieving the core advantages of GaN technology: higher switching frequencies, lower switching and conduction losses, and greater power density. Targeting low-power motor drive systems and switched-mode power supplies, the integrated half-bridge enables smaller magnetics and passive components, higher efficiency across operating conditions, and improved dynamic performance in space-constrained designs. The device achieves switching with a 98 ns propagation delay. For simplified system integration, it offers a PWM input compatible with standard logic levels and operates from a single 12 V gate driver supply, while fast UVLO recovery helps ensure robust behavior during start-up and transient supply events. The products are housed in a 6 x 8 mm² TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications. | 26.02.2026 07:30:00 | Feb | news_2026-03-15_8.jpg | \images\news_2026-03-15_8.jpg | https://www.infineon.com/market-news/2026/infpss202602-054 | infineon.com |
| Programmable AC/DC Power Supply Series | TDK Corporation has expanded the 3000 W TDK-Lambda... | 13753 | Product Release | Programmable AC/DC Power Supply Series | TDK Corporation has expanded the 3000 W TDK-Lambda HWS3000 programmable AC/DC power supply series with the HWS3000GT4 model. Now available with a wide-range 340 – 528 V AC three-phase input option its nominal output voltages and output currents remain fully programmable from zero up to their maximum ratings. Output programming can be achieved using a serial RS485 interface (MODBus protocol) or analog 1 - 5 V or 4 - 20 mA signals, enabling straightforward connection to PLCs, automation systems, and test equipment. These devices also feature a variable speed fan with 45 dB audible noise at <70 % load, and a 25 ºC typical ambient temperature. The HWS3000 series can be used in a wide range of applications, including test and measurement, semiconductor fabrication, RF amplifiers, laser machining, printing, and industrial equipment. Six nominal output voltages, 24 V, 48 V, 60 V, 80 V, 130 V, and 250 V, can be programmed to cover voltages from 0 – 300 V. Available in a 270 × 150 × 61 mm³ case size, up to three units can be connected in series or up to ten in parallel, offering scalable solutions for higher voltage or current requirements. The digitally programmable voltage slew rate, along with monitoring functions such as cumulative operating time, fault logs, and product identification, enhances system control and diagnostics. | 24.02.2026 14:30:00 | Feb | news_2026-03-01_17.jpg | \images\news_2026-03-01_17.jpg | https://www.emea.lambda.tdk.com/uk/news/article/21481 | lambda.tdk.com |
| Surge Protection Device | Bourns announced its GDT225HE Series High Voltage,... | 13765 | Product Release | Surge Protection Device | Bourns announced its GDT225HE Series High Voltage, High Energy Gas Discharge Tube (GDT) Arresters. Providing surge protection performance these GDTs are optimized for high-energy AC/DC power systems, including EV charging infrastructure, Battery Energy Storage Systems (BESS) and industrial power conversion equipment. These systems, in particular, are known to experience commutation or fault insertion events. It is the series’ ability to safely conduct prolonged high thermal (I²t) energy during transient conditions that makes it well-suited for system-level surge and fault protection, equipotential bonding and for lightning-prone designs where high-energy discharge must be safely diverted and controlled. The Bourns GDT225HE Series features a broad DC Breakdown Voltage (DCBV) from 1000 to 2000 V, I<sub>n</sub> 40 kA (Nominal Discharge Current) and I<sub>max</sub> 60 kA (Maximum Discharge Current) ratings on an 8/20 μs waveform to deliver protection for lightning-prone and high-energy applications. These high-power GDTs provide a space-saving alternative to bulky surge protection solutions. This series is also available in various lead shapes to fit in different configuration specifications; it is UL Recognized, ITU-T K.12 tested and RoHS compliant. | 24.02.2026 11:30:00 | Feb | news_2026-03-15_12.jpg | \images\news_2026-03-15_12.jpg | https://www.bourns.com/news/press-releases/pr/2026/02/24/bourns--high-voltage--high-energy-gdt-series-offers-industry-leading-surge-protection-performance-in-a-compact-package | bourns.com |
| Intensified Distribution Agreement on Power Supplies | RECOM Power and electronics distributor Bürklin El... | 13741 | Industry News | Intensified Distribution Agreement on Power Supplies | RECOM Power and electronics distributor Bürklin Elektronik are intensifying their collaboration, which has been in place for more than twelve years. The aim of expanding the partnership is to provide customers even faster and more comprehensively with DC/DC and AC/DC power supply solutions from RECOM for industrial, medical, and railway applications. "The intensified collaboration with Bürklin is an important step for us in order to serve our customers even more precisely and quickly," says Uwe Frischknecht, Managing Director Sales EMEA at RECOM. "Bürklin has a strong market presence and outstanding logistics expertise, which perfectly complements our technology portfolio." | 24.02.2026 10:00:00 | Feb | news_2026-03-01_5.jpg | \images\news_2026-03-01_5.jpg | https://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-and-b%C3%BCrklin-significantly-expand-their-partnership-458.html?4 | recom-power.com |
| Evaluation Board for Humanoid Robot Joint Applications | Efficient Power Conversion (EPC) has released the ... | 13748 | Product Release | Evaluation Board for Humanoid Robot Joint Applications | Efficient Power Conversion (EPC) has released the EPC91122, a 3-phase BLDC motor drive inverter evaluation board specifically engineered for humanoid robot joint applications. Featuring EPC’s EPC33110 3-phase ePower™ Stage module, the EPC91122 delivers up to 20 A<sub>RMS</sub> (28 A<sub>peak</sub>) phase current in an adequate form factor optimized for space-constrained robotic joints, integrating all key functions of a complete motor drive inverter, including a microcontroller, motor shaft angular sensor, housekeeping power supplies, accurate voltage and current sense. The EPC91122 is mechanically optimized to fit directly inside humanoid joint motors. The complete GaN inverter occupies a 32 mm diameter inner circle, surrounded by a 55 mm external frame that supports mechanical mounting and lab connectivity. This design lets the inverter fit inside the motor chassis, which lowers loop inductance and makes the power density and dynamic performance higher. The EPC33110 is the main part of the system. It is a three-phase co-packaged module with a maximum voltage of 100 V. It has three monolithic GaN half-bridges with built-in gate drivers, bootstrap circuits, and level shifters. The device has an R<sub>DS(on)</sub> of 11.7 + 13 mΩ and can switch at frequencies of up to 150 kHz, which means it may use smaller passive components and respond quickly to changes. The board operates from a wide input range, making it well-suited for battery-powered robotic systems. It integrates all critical subsystems required for a complete motor drive inverter. The EPC91122 comes preprogrammed to operate at 100 kHz PWM with 50 ns dead time, showcasing the high-speed switching capability enabled by GaN technology. Thermal testing under real-world operating conditions confirms the board’s capability for continuous and pulsed operation. Complete design support files, including schematic, bill of materials (BOM), and Gerber files, are available. | 24.02.2026 09:30:00 | Feb | news_2026-03-01_12.jpg | \images\news_2026-03-01_12.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3262/humanoid-robot-joint-motor-control-using-the-epc91122-powered-by-the-epc33110-gan-stage | epc-co.com |
| Joining Forces for Silicon Power Semiconductor for high-voltage Modules | Hitachi Energy announced a collaboration to advanc... | 13738 | Industry News | Joining Forces for Silicon Power Semiconductor for high-voltage Modules | Hitachi Energy announced a collaboration to advance shared value creation and sustainable growth. Hitachi Energy will incorporate Pakal Technologies’ Insulated Gate Turn-Off (Thyristor), IGTO(t)™, silicon power switch into its portfolio of high-voltage power modules, beginning with devices used in essential applications such as rail, renewables, energy storage, AI, and data center infrastructure. The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and improving overall efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal Technologies’ IGTO(t) innovation the collaboration aims to contribute to cumulative daily efficiency gains across energy infrastructure. Together, the companies intend to produce the highest-performing ≥3.3 kV power semiconductor modules for Hitachi Energy to offer to its large and growing global customer base, delivering higher performance, lower operating costs, and greater long-term reliability across critical electrification projects. | 24.02.2026 07:00:00 | Feb | news_2026-03-01_2.png | \images\news_2026-03-01_2.png | https://www.hitachienergy.com/news-and-events/press-releases/2026/02/hitachi-energy-and-pakal-technologies-join-forces-in-breakthrough-silicon-power-semiconductor-for-high-voltage-modules | hitachienergy.com |
| productronica China 2026 Draws Asia’s Leaders in Intelligent Electronics Manufacturing | From March 25 to 27, 2026, productronica China 202... | 13744 | Event News | productronica China 2026 Draws Asia’s Leaders in Intelligent Electronics Manufacturing | From March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre. As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including automobiles, industry, communication electronics, and medical electronics. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future. | 22.02.2026 13:00:00 | Feb | news_2026-03-01_8.jpg | \images\news_2026-03-01_8.jpg | https://dwz.cn/dm1kDXWY | productronicachina.com.cn |
| Contract extended ahead of Schedule | Infineon Technologies AG plans to extend the contr... | 13759 | People | Contract extended ahead of Schedule | Infineon Technologies AG plans to extend the contracts of Chief Executive Officer Jochen Hanebeck and Chief Financial Officer Dr. Sven Schneider ahead of schedule. Jochen Hanebeck’s contract is to be extended until the end of March 2032, while Dr. Sven Schneider’s contract is to run until the end of April 2032. Without the planned extension, the contracts would have expired on 1 April 2027 and 1 May 2027, respectively. The Supervisory Board will pass the formal resolution in May. "Infineon Technologies AG is in very capable hands, which is why we are establishing clarity about the company’s long term direction at an early stage," says Dr. Herbert Diess, Chairman of the Supervisory Board of Infineon Technologies AG. "With important investments in technological strength and a consistent focus on competitiveness, Jochen Hanebeck - together with Sven Schneider and the entire Management Board team - has successfully positioned Infineon for the future. The company will continue on this path of profitable growth in the years ahead." "We are determined to seize future opportunities - for example in the fields of artificial intelligence, software defined vehicles and humanoid robotics," says Jochen Hanebeck. "Infineon is exceptionally well positioned to benefit from the defining growth trends of our time. The key to success is the ability to rapidly turn innovation into customer value. I would like to thank the Supervisory Board for its confirmation to continue consistently on this path." | 19.02.2026 11:00:00 | Feb | news_2026-03-15_6.jpg | \images\news_2026-03-15_6.jpg | https://www.infineon.com/press-release/2026/infxx202602-050 | infineon.com |
| Automotive SMT Common Mode Chokes | The CMA family of automotive qualified common mode... | 13766 | Product Release | Automotive SMT Common Mode Chokes | The CMA family of automotive qualified common mode chokes from Coilcraft are available for current ratings up to 8.2 A. Providing suppression of high frequency common mode noise up to 100 MHz they are suitable for inverters, motor drives, onboard chargers, as well as telecom and industrial applications. The AEC-Q200-qualified surface mount toroids provide isolation (hipot) up to 1500 V<sub>rms</sub>. The CMA series complements the Cx common mode choke series with AEC qualified reliability. | 18.02.2026 12:30:00 | Feb | news_2026-03-15_13.jpg | \images\news_2026-03-15_13.jpg | https://www.coilcraft.com/en-us/products/emi/power-line-common-mode-choke/high-isolation/cma/ | coilcraft.com |
| Charles Hosono Appointed CEO | Presto Engineering announced the appointment of Ch... | 13743 | People | Charles Hosono Appointed CEO | Presto Engineering announced the appointment of Charles Hosono as Chief Executive Officer. He succeeds Cédric Mayor, who is stepping down to pursue new projects after contributing to the company’s development for nearly 16 years. Charles Hosono brings over 30 years of experience in the global semiconductor industry to Presto, alongside a proven track record of supporting high-growth international companies. He began his career as a radio frequency (RF) integrated circuit design engineer before holding sales and marketing leadership roles at NXP (formerly Philips Semiconductors) and Infineon Technologies. A recognized expert in business growth and organizational structuring, Charles Hosono notably contributed to the success of leveraged buyout operations at Linxens as Global VP of Sales and Marketing and President of the Asia-Pacific region. With a robust international background, Charles spent nearly 15 years in Asia between Singapore and Shanghai, providing him with a global perspective on semiconductor market challenges. | 18.02.2026 12:00:00 | Feb | news_2026-03-01_7.png | \images\news_2026-03-01_7.png | https://www.presto-eng.com/news/presto-engineering-appoints-charles-hosono-as-ceo-to-accelerate-ambition-as-europes-leading-asic-one-stop-shop | presto-eng.com |
| Compact Package for Automotive 40 V/60 V MOSFETs | ROHM has expanded its lineup of low-voltage (40 V/... | 13745 | Product Release | Compact Package for Automotive 40 V/60 V MOSFETs | ROHM has expanded its lineup of low-voltage (40 V/60 V) MOSFETs for automotive applications – such as main inverter control circuits, electric pumps, and LED headlights – by introducing latest products adopting the new HPLF5060 package (4.9 mm × 6.0mm). The HPLF5060 package offers a smaller footprint compared to the widely used TO-252 package (6.6 mm × 10.0 mm) while enhancing board-mount reliability through the adoption of gull-wing leads. Additionally, the use of copper clip junction technology enables high-current operation, making the HPLF5060 suitable for demanding automotive environments. | 18.02.2026 06:30:00 | Feb | news_2026-03-01_9.jpg | \images\news_2026-03-01_9.jpg | https://www.rohm.com/news-detail?news-title=2026-02-18_news_mosfet&defaultGroupId=false | rohm.com |
| 6500 V / 2000 A Press Pack IEGT for HV DC Applications | Toshiba Electronics launched the ST2000JXH35A, a 6... | 13747 | Product Release | 6500 V / 2000 A Press Pack IEGT for HV DC Applications | Toshiba Electronics launched the ST2000JXH35A, a 6500 V / 2000 A press pack injection enhanced gate transistor (IEGT) designed for high-voltage converters used in DC power transmission systems, industrial motor-drive equipment and static synchronous compensators (STATCOM). The device uses trench-type IEGT chips. The ST2000JXH35A is able to streamline the design of high-voltage systems. By adopting this 6500 V-rated product, engineers can reduce the number of series-connected devices required in DC power transmission architectures. This reduction in component count directly contributes to the weight reduction and miniaturisation of overall equipment designs. Consequently, these improvements help reduce construction and transportation costs, offering value for offshore converter stations in wind farms, where installation costs and logistical complexity are significant. The product features a press-pack design that supports double-sided cooling and a hermetic sealing structure to ensure the reliability required for long-term industrial operation. In addition to transmission infrastructure, the ST2000JXH35A enables higher voltage ratings and more compact form factors for industrial motor drives and reactive power compensation devices that stabilize power systems. | 17.02.2026 08:30:00 | Feb | news_2026-03-01_11.jpg | \images\news_2026-03-01_11.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/02/igbt-iegt-20260217-1.html | toshiba.semicon-storage.com |
| Record Efficiencies for Tandem Photovoltaic Modules | Scientists at the Fraunhofer Institute for Solar E... | 13739 | Industry News | Record Efficiencies for Tandem Photovoltaic Modules | Scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in constructing two tandem photovoltaic modules with record efficiencies. A III-V germanium PV module with an efficiency of 34.2 percent, incorporating solar cells from AZUR SPACE and anti-reflection structures from temicon, thus becomes "the most efficient solar module in the world", Fraunhofer ISE says. "A III-V silicon PV module achieves an efficiency of 31.3 percent, setting a record in its class, and is based on established, cost-effective silicon technology." A few years ago, researchers at the Fraunhofer ISE achieved a new efficiency record for silicon-based solar cells with a III-V silicon solar cell reaching 36.1 percent. As part of the research project "Mod30plus," they have now, for the first time, realized a small-scale production of these solar cells, adapted for interconnection with shingle technologies. A module produced by the research team in this way, measuring 218 square centimeters, has now achieved an efficiency of 31.3 percent. A 833-square-centimeter tandem module with an efficiency of 34.2 percent was built by a second research team from Fraunhofer ISE as part of the "Vorfahrt" project. It consists of triple III-V germanium cells. Conventional silicon solar cells cannot exceed a physical efficiency limit of 29.4 percent; currently commercially available PV modules already have efficiencies around 24 percent. Both research projects were funded by the German Federal Ministry for Economic Affairs and Energy. | 17.02.2026 08:00:00 | Feb | news_2026-03-01_3.jpg | \images\news_2026-03-01_3.jpg | https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/fraunhoferise-achieves-record-efficiencies-for-tandem-photovoltaic-modules.html | ise.fraunhofer.de |
| Automotive Grade High Voltage Chip Resistors: Up to 100 MΩ | Stackpole’s RVCA Series is a thick-film, high-volt... | 13751 | Product Release | Automotive Grade High Voltage Chip Resistors: Up to 100 MΩ | Stackpole’s RVCA Series is a thick-film, high-voltage chip resistor family purpose-built to meet the demands of 400 V, 800 V, and higher voltage systems. Designed to simplify high-voltage circuit implementation, RVCA provides engineers with a reliable, compact solution that reduces the need for series stacking while improving long-term stability. The series is automotive grade, AEC-Q200 qualified, and anti-sulfur compliant per EIA-977, ensuring robust performance in harsh, high-stress environments common to EV, industrial, and power electronics applications. The RVCA Series supports voltage ratings up to 3 kV in the 2512 case size, with 0805 and larger packages offering minimum ratings of 400 V. The resistance range spans from 30 kΩ to 100 MΩ further enables implementation of voltage dividers, sensing networks, bleed circuits, and high-impedance nodes across high-voltage platforms. | 16.02.2026 12:30:00 | Feb | news_2026-03-01_15.png | \images\news_2026-03-01_15.png | https://www.seielect.com/news/en/20260216%20rvca.pdf | seielect.com |
| PCIM Conference 2026 – preliminary program | The conference program for PCIM Expo & Conference ... | 13737 | Event News | PCIM Conference 2026 – preliminary program | The conference program for PCIM Expo & Conference 2026 is now online. With over 500 conference presentations and poster presentations, you can expect a high-caliber program covering the entire value chain of the power electronics industry. In addition, the 27 half-day seminars on the two days preceding the conference offer practical insights and in-depth technical knowledge. | 16.02.2026 06:00:00 | Feb | news_2026-03-01_1.jpg | \images\news_2026-03-01_1.jpg | https://pcim.mesago.com/nuernberg/en/conference/program-speakers/program.html | pcim.mesago.com |
| Distribution Partnership for Silicon Carbide Solutions | SemiQ has announced a distribution agreement with ... | 13742 | Industry News | Distribution Partnership for Silicon Carbide Solutions | SemiQ has announced a distribution agreement with NAC Semi, a global electronic component design services and distribution company. This partnership is expected to accelerate the adoption of SemiQ’s SiC technology across North America markets, providing engineers with access to high-efficiency power modules, MOSFETs, and Schottky diodes. NAC Semi bridges the gap between catalog houses and large fulfillment distributors by offering "demand creation" services, including dedicated Field Applications Engineer (FAE) support. By adding SemiQ to its line card, NAC Semi enhances its ability to provide comprehensive SiC solutions for applications such as EV charging stations, solar inverters, and high-voltage power supplies. | 12.02.2026 11:00:00 | Feb | news_2026-03-01_6.jpg | \images\news_2026-03-01_6.jpg | https://semiq.com/semiq-establishes-distribution-partnership-with-nac-semi-to-expand-global-reach-for-silicon-carbide-solutions/ | semiq.com |
| 4 kW DC/DC Converters with 180 – 950 VDC Input | The RECOM RMOD4000 series of plug-and-play DC/DC c... | 13750 | Product Release | 4 kW DC/DC Converters with 180 – 950 V<sub>DC</sub> Input | The RECOM RMOD4000 series of plug-and-play DC/DC converters is able to provide isolated 14 V, 28 V, or 56 V DC network rails from a high input voltage between 180 and 950 V<sub>DC</sub> from traction batteries. Depending on variant and input voltage up to 4 kW is available, while the conversion efficiency is up to 95 %. The output is fully regulated and protected against over-current, over-voltage, over-temperature and short circuits, while the input has under-and over-voltage lockout and active inrush suppression. An isolated CAN J1939 interface is provided to allow control and data monitoring including output voltage adjustment. A separate hardware on/off control (ignition) and HV-interlock-function is included. As an added feature, an integrated OR-ing function is implemented, allowing paralleling of units for redundancy or increased power capability with active current sharing. Operating temperature is -40 °C to +85 °C with no derating. Full reinforced isolation is provided to IEC62477-1, vehicle safety standards ISO6469-3, and ISO 7637 are met, and the EMC standard ECER10 Rev 4 is certified (E-mark). The RMOD4000 series is presented in a water- and dust-proof cast aluminum enclosure to IP67 standard and can be baseplate or water-cooled with integrated coolant ports. Body dimensions are 316 × 254 × 83 mm³, and sealed, plug-in connectors are provided for input and outputs. Typical applications are as an on-board DC/DC converter for battery powered on- and off-highway vehicles, such as forklifts, golf carts, AGVs, loaders, tractors, ships, and electric boats, in the areas of marine, material handling, construction, airports, E-mobility and marine systems. | 11.02.2026 11:30:00 | Feb | news_2026-03-01_14.jpg | \images\news_2026-03-01_14.jpg | https://recom-power.com/en/knowledgebase/newsroom/rec-n-4kw-e-mobility-dc!sdc-features-180-950vdc-input-457.html?4 | recom-power.com |
| Current Transducers for up to 3200 V and 1500 A | Danisense has expanded its DN1000ID current transd... | 13746 | Product Release | Current Transducers for up to 3200 V and 1500 A | Danisense has expanded its DN1000ID current transducer product family with the introduction of the DN1000ID-CP02 model, which features a significantly increased creepage and clearance distance of 38 mm, compared with 11 mm for the standard DN1000ID version. In addition, the permissible voltage for uninsulated cables has been raised from 1000 V to 3200 V, making them well-suited for power measurement and power analysis in EV chargers, power inverters, and battery energy storage systems. Additional target applications include EV test benches, particle accelerators, MRI systems and medical scanners, battery testing and evaluation equipment, current calibration systems, and other precision current-sensing applications. The DN1000ID-CP02 device incorporates a removable isolation insert and a 40 mm aperture to accommodate wide cable terminals. The transducer is capable of measuring currents up to 1500 A, with continuous measurement of 1000 A achieved with a linearity error of less than 1 ppm. An over-range capability of 1200 A<sub>RMS</sub> for up to 30 minutes is also supported. Based on Danisense’s closed-loop fluxgate technology, the DN1000ID-CP02 delivers an offset of 5 ppm. Noise performance is claimed to be "best-in-class, with sub-ppm RMS noise across frequencies up to 10 kHz". | 11.02.2026 07:30:00 | Feb | news_2026-03-01_10.jpg | \images\news_2026-03-01_10.jpg | https://danisense.com/products/dn1000id-cp02/ | danisense.com |
| GaN Insights eBook | The power electronics industry is undergoing a sig... | 13724 | Industry News | GaN Insights eBook | The power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies has published the 2026 edition of its annual GaN Insights, providing awareness into the world of GaN technology, its applications, and future prospects. According to analysts from Yole, the GaN power semiconductor market is expected to reach almost $3 billion by 2030, marking a 400 % increase compared to the 2025 market. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications. In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44 % from 2025 to 2030 (Source: Trend Force), with revenue projections of $920 million in 2026, representing a 58 % growth over 2025 (Source: Yole). In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon’s high-voltage bidirectional GaN switches feature a common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology. This architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, utilizing Infineon’s CoolGaN™ BDS, which operates up to 1 MHz, solar microinverters deliver 40 % more power in the same-sized inverter while reducing system costs. The GaN Insights eBook is available on Infineon’s website. | 10.02.2026 09:00:00 | Feb | news_2026-02-15_4.jpg | \images\news_2026-02-15_4.jpg | https://www.infineon.com/market-news/2026/infpss202602-047 | infineon.com |
| Embedded Silicon Capacitors | Empower Semiconductor launched three embedded sili... | 13762 | Product Release | Embedded Silicon Capacitors | Empower Semiconductor launched three embedded silicon capacitors (ECAPs™), designed to meet the power integrity demands of next-generation AI and high-performance computing (HPC) processors. These ECAPs include the EC2005P, with 9.34 μF capacitance in a 2 mm × 2 mm package; the EC2025P, offering 18.68 μF capacitance in a 4 mm × 2 mm package and the EC2006P, providing 36.8 μF capacitance in a 4 mm × 4 mm form factor. As AI processors push the limits of performance, power delivery has emerged as a critical constraint. Achieving the required power integrity for extreme current densities and ultrafast transient response is no longer realistic with board-level mounted components; embedding capacitors into the processor substrate is now essential. | 10.02.2026 08:30:00 | Feb | news_2026-03-15_9.jpg | \images\news_2026-03-15_9.jpg | https://www.empowersemi.com/empower-introduces-high-density-embedded-silicon-capacitors-to-advance-next-generation-ai-and-hpc-performance/ | empowersemi.com |
| Strategic GaN Technology Licensing and Second Sourcing Agreement | Efficient Power Conversion (EPC) announced a compr... | 13721 | Industry News | Strategic GaN Technology Licensing and Second Sourcing Agreement | Efficient Power Conversion (EPC) announced a comprehensive licensing agreement with Renesas Electronics Corporation. Under the agreement, Renesas will gain access to EPC’s proven low-voltage eGaN® technology and its established supply-chain ecosystem, accelerating the adoption of high-performance GaN solutions across a broad range of markets. EPC and Renesas will collaborate over the next year to establish internal wafer fabrication capabilities for these products. In addition, Renesas will second-source several of EPC’s GaN devices that are already in mass production, enhancing supply-chain resilience for customers. This alliance expands customer access to GaN technology while providing increased supply assurance through qualified second sourcing. "Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency - cutting costs in AI data centers and enhancing autonomous systems. This is an exciting moment for our industry and our company," said Alex Lidow, CEO of EPC. | 10.02.2026 06:00:00 | Feb | news_2026-02-15_1.jpg | \images\news_2026-02-15_1.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3257/epc-announces-strategic-gan-technology-licensing-and-second-sourcing-agreement-with-renesas | epc-co.com |
| 10 kW DC/DC Platform delivering 98.5 % Efficiency | Navitas Semiconductor has introduced a 10 kW DC/DC... | 13736 | Product Release | 10 kW DC/DC Platform delivering 98.5 % Efficiency | Navitas Semiconductor has introduced a 10 kW DC/DC power platform delivering up to 98.5 % peak efficiency and 1 MHz switching frequency to support next-generation AI data centers. The all-GaN 10 kW 800 V–to–50 V DC/DC platform employs 650 V and 100 V GaNFast™ FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5 % peak efficiency and 98.1% full load efficiency in a full-brick (61 mm × 116 mm × 11 mm) package, achieving 2.1 kW/in³ power density. The resulting production-oriented platform supports 800 V–to–50 V and +/- 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers. | 09.02.2026 15:30:00 | Feb | news_2026-02-15_16.jpg | \images\news_2026-02-15_16.jpg | https://navitassemi.com/navitas-unveils-breakthrough-10-kw-dc-dc-platform-delivering-98-5-efficiency-for-800-vdc-next-gen-ai-data-centers/ | navitassemi.com |
| Magnet-Free E-Motor to Reduce Production Costs | Current axial flux machines (AFM) meet several pos... | 13740 | Industry News | Magnet-Free E-Motor to Reduce Production Costs | Current axial flux machines (AFM) meet several positive criteria but are almost exclusively dependent on rare-earth magnets. To avoid the use of those cost-intensive and increasingly scarce resources, the radial flux synchronous reluctance machine (RF-SynRM) is currently considered a sustainable, robust, and overload-capable alternative. In turn, this entails compromises in terms of installation space and torque density. The "NAFTech" project of RWTH Aachen university therefore focuses on the concept of an axial flux synchronous reluctance machine (AF-SynRM) that combines the respective advantages of AFM and RF-SynRM. NAFTech therefore pursues an integrated approach to topology, multi-domain machine design, and production methods, supported by data-based optimization of tolerance chains. During the project, the simulative design of the machine and the suitability of the manufacturing processes will be validated with the aid of specially constructed partial demonstrators. The team says that "a magnet-free motor reduces material costs by up to 50 percent". | 09.02.2026 09:00:00 | Feb | news_2026-03-01_4.png | \images\news_2026-03-01_4.png | https://www.pem.rwth-aachen.de/go/id/brigdm?lidx=1#aaaaaaaaabrigek | pem.rwth-aachen.de |
| Isolated Gate Drivers for Automotive Modules | STMicroelectronics’ STGAP2SA and STGAP2HSA automot... | 13749 | Product Release | Isolated Gate Drivers for Automotive Modules | STMicroelectronics’ STGAP2SA and STGAP2HSA automotive-grade, galvanically isolated 4 A gate drivers with 60 ns response time and close part-to-part matching are suitable for IGBTs and silicon MOSFETs operating with a high-voltage rail up to 1200 V. The drivers can sink/source 4 A at up to 26 V for unipolar or bipolar driving. Extending the STGAP series, ST’s industrial and automotive galvanic isolated gate drivers, these AEC-Q100 qualified devices can handle a wide variety of applications throughout conventional, hybrid, and electric vehicles. Typical uses include DC/DC converters, pumps, fans, heaters, e-compressors, and on-board chargers (OBC). Other uses include wallbox and pedestal DC charging systems, as well as industrial inverters and motor drives. Featuring built-in protection, the drivers simplify design and enhance reliability, with under-voltage lockout (UVLO) and an output safe state during power-up and power-down. There is also Miller clamping to prevent induced turn-on and thermal shutdown to prevent operation above maximum safe temperature, automatically resuming when cooled. In addition, a self-monitoring watchdog makes the output safe if communication from the low-voltage side fails and there is a power-saving standby mode, entered by simultaneously holding the inputs high. Both devices meet UL 1577 isolation ratings. The STGAP2SA, in a standard SO-8 package, has transient and surge isolation voltages (V<sub>IOTM</sub>, V<sub>IOSM</sub>) of 4800 V. The STGAP2HSA is compliant with IEC 60747-17 for basic insulation and has 6000 V surge isolation voltage (V<sub>IOSM</sub>), in a wide-body SO-8W package with 8 mm creepage and clearance. A demonstration board is available for each part. | 07.02.2026 10:30:00 | Feb | news_2026-03-01_13.jpg | \images\news_2026-03-01_13.jpg | https://www.st.com/content/st_com/en/campaigns/automotive-industrial-galvanic-isolated-gate-drivers-asp-mcmotdri.html | st.com |
| Partner Program launched | Würth Elektronik has launched its partner program ... | 13726 | Industry News | Partner Program launched | Würth Elektronik has launched its partner program to create a dynamic, high-growth innovation ecosystem in the electronics industry. The program was officially presented at a kick-off event at the end of September, where Texas Instruments was presented as the first Premium Partner. The semiconductor manufacturer Nexperia has also signed up as a Silver Partner. The Würth Elektronik partner program is divided into three tiers. Entry is possible with just a non-disclosure agreement, a brand license, and a business model. Based on clearly defined criteria – such as brand commitment, shared growth objectives, and the integration of Würth Elektronik components into their own designs – participating companies can then progressively advance from Entry Level through Silver to Premium Partner status. The program is based on four pillars: technical support, products and tools, marketing support, and knowledge transfer and training. This creates a network that brings together technology leaders, business units, and stakeholders. Partners can unlock new market potential, accelerate product innovation, and offer their customers a seamless one-stop-shop concept. | 05.02.2026 11:00:00 | Feb | news_2026-02-15_6.jpg | \images\news_2026-02-15_6.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=partnerprogram | we-online.com |
| Service for Current Sense Transformers | Würth Elektronik expands its free design tool REDE... | 13731 | Product Release | Service for Current Sense Transformers | Würth Elektronik expands its free design tool REDEXPERT to include the Current Sense Transformer Selector. It enables developers to select the appropriate current sense transformers based on parameters relevant to their application. Current sense transformers for measuring alternating current offer unique advantages over other current sensing solutions: galvanic isolation, low power loss, high immunity to signal noise, and simple circuit design. Selecting the right current sensor can be a challenge depending on the application. The Current Sense Transformer Selector from Würth Elektronik offers a unique design tool previously not available on the market in this form. After entering the parameters – current, frequency, signal type, and desired maximum error rate – the Selector finds all available options in Würth Elektronik’s product database that match these criteria. The tool provides a list of components with the corresponding parameters and simulates both the temperature rise and the error as a function of frequency and current. The tool also allows the direct comparison of different options in a simulation view and provides an overview page with all relevant information for the selected component. These simulations, based on actual measurements, save developers from having to conduct their own tests when selecting current sense transformers (CSTs). Typical applications of current sense transformers include AC current measurement, switched-mode power supplies, overload detection, load shedding/shutdown detection, metering, load measurement, and high-frequency current sensing. | 05.02.2026 10:30:00 | Feb | news_2026-02-15_11.jpg | \images\news_2026-02-15_11.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=redexpert-current-sense | we-online.com |
| Isolated Gate Driver ICs for SiC Applications | Infineon Technologies introduces the EiceDRIVER&tr... | 13729 | Product Release | Isolated Gate Driver ICs for SiC Applications | Infineon Technologies introduces the EiceDRIVER™ 1ED301xMC12I product family, a series of high-performance isolated gate driver ICs with opto. This enables engineers to migrate to SiC technology without redesigning opto-based control schemes. The family is suitable for demanding applications where fast, reliable, and SiC-capable gate drivers are required, such as motor drives, solar inverters, electric-vehicle chargers, and energy-storage systems. The 1ED301xMC12I product family includes three variants designed to support Si MOSFETs, IGBTs, and SiC MOSFETs: 1ED3010, 1ED3011, and 1ED3012. All devices deliver up to 6.5 A of output current. The gate drivers come in a CTI 600 6-pin DSO package offering more than 8 mm creepage and clearance. Their insulation is certified according to UL 1577 and is pending certification according to IEC 60747-17. The opto-emulator input uses two pins. With a CMTI exceeding 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns, the devices enable precise and robust switching behavior. Moreover, a pure PMOS sourcing stage further improves turn-on performance. | 05.02.2026 08:30:00 | Feb | news_2026-02-15_9.jpg | \images\news_2026-02-15_9.jpg | https://www.infineon.com/market-news/2026/infpss202602-045 | infineon.com |
| 1200V SiC MPS Diodes | RIR Power Electronics has introduced a family of 1... | 13727 | Product Release | 1200V SiC MPS Diodes | RIR Power Electronics has introduced a family of 1200 V Silicon Carbide Merged-PiN Schottky (MPS) diodes designed for high-efficiency and high-reliability power systems. The devices are available in current ratings from 10 A to 40 A in industry-standard TO-247-2L packages. By monolithically integrating Schottky and PiN structures, RIR’s SiC MPS diodes deliver near-zero reverse recovery with enhanced surge current capability, low leakage at elevated temperatures, and improved avalanche and blocking robustness compared to conventional Schottky diodes. The diodes target demanding applications such as EV charging, data centers and AI infrastructure, renewable energy and grid-tied systems, industrial drives, aerospace and defense, and green hydrogen and electrolysis systems. | 05.02.2026 06:30:00 | Feb | news_2026-02-15_7.png | \images\news_2026-02-15_7.png | https://www.rirpowersemi.com/news/rir-launches-sic-mps-diodes-for-ev-and-power-systems | rirpowersemi.com |
| Technology Guide to enhance Power Stability in AI-driven Data Centres | Murata Manufacturing has launched a technology gui... | 13725 | Industry News | Technology Guide to enhance Power Stability in AI-driven Data Centres | Murata Manufacturing has launched a technology guide entitled: ‘Optimising Power Delivery Networks for AI Servers in Next-Generation Data Centres.’ Available on the company’s website, the guide introduces specific power delivery network optimisation solutions for AI servers that enhance power stability and reduce power losses across the data center infrastructure. The guide addresses the rapid advancement and adoption of AI, a trend driving the continuous rollout of new data centers worldwide. As the industry moves toward higher voltage operations and increased equipment density, the resulting increase in overall power consumption has made stable power delivery a critical business issue for data centre operators. Consequently, the guide focuses on power circuit design for data centers, providing a detailed overview of market trends, evolving technologies in power delivery, and the key challenges the sector currently faces. To assist engineers and designers, the guide is structured to provide a market overview that breaks down power consumption and technology trends within power lines. It further addresses market challenges and solutions by examining key considerations in power-line design and exploring how the evolution of power placement architectures can facilitate power stabilisation and loss reduction. Murata supports these architectural improvements with products, including multilayer ceramic capacitors (MLCC), silicon capacitors, polymer aluminium electrolytic capacitors, inductors, chip ferrite beads, and thermistors. Furthermore, the company provides design-stage support. | 04.02.2026 10:00:00 | Feb | news_2026-02-15_5.png | \images\news_2026-02-15_5.png | https://www.murata.com/en-eu/news/other/other/2026/0204 | murata.com |
| Texas Instruments to acquire Silicon Labs | Texas Instruments and Silicon Labs have signed a d... | 13723 | Industry News | Texas Instruments to acquire Silicon Labs | Texas Instruments and Silicon Labs have signed a definitive agreement under which Texas Instruments will acquire Silicon Labs for $ 231.00 per share in an all-cash transaction, representing a total enterprise value of approximately $ 7.5 billion. The acquisition aims to create a provider of embedded wireless connectivity solutions by combining Silicon Labs’ strong portfolio and expertise in mixed signal solutions with Texas Instruments’ analog and embedded processing portfolio and internally owned technology and manufacturing capabilities. The combined company is expected to accelerate growth by better serving existing and new customers through enhanced innovation and market access. | 04.02.2026 08:00:00 | Feb | news_2026-02-15_3.jpg | \images\news_2026-02-15_3.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2026/2026-02-04-texas-instruments-to-acquire-silicon-labs.html?HQS=corp-dbwti-ep-tisi-bhp-news-null-wwe | ti.com |
| Power Module enhances AI Data Center Power Density and Efficiency | Microchip Technology launched the MCPF1525 Power M... | 13730 | Product Release | Power Module enhances AI Data Center Power Density and Efficiency | Microchip Technology launched the MCPF1525 Power Module, a highly integrated device with a 16V Vin buck converter that can deliver 25 A per module, stackable up to 200 A. This device is designed to power the latest generation of PCIe switches and high-performance compute MPU applications needed for AI deployments. The MCPF1525 is packaged in a vertical construction that maximizes board space efficiency and can offer up to a 40 % board area reduction when compared to other solutions. The compact power module is approximately 6.8 mm × 7.65 mm × 3.82 mm, making it usable for space-constrained AI servers. For increased reliability, the MCPF1525 includes multiple diagnostic functions reported over PMBus™, including over-temperature, over-current and over-voltage protection to minimize undetected faults. With a thermally enhanced package, the device is engineered to work within an operating junction temperature range of -40°C to +125°C. An on-board embedded EEPROM allows users to program the default power-up configuration. The MCPF1525 features a customized integrated inductor for low conducted and radiated noise, enhancing signal integrity, data accuracy and reliability of high-speed computing, helping reduce repeated data transmissions that waste valuable system power and time. | 03.02.2026 09:30:00 | Feb | news_2026-02-15_10.jpg | \images\news_2026-02-15_10.jpg | https://www.microchip.com/en-us/about/news-releases/products/new-power-module-enhances-ai-data-center-power-density-efficiency | microchip.com |
| GaN Power Transistor: Seventh-Generation in Mass Production | Efficient Power Conversion (EPC) has started volum... | 13734 | Product Release | GaN Power Transistor: Seventh-Generation in Mass Production | Efficient Power Conversion (EPC) has started volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN® family of power transistors. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84 mΩ and an optimized R<sub>DS(on)</sub> × Q<sub>G</sub> figure of merit (FoM) < 12 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC/DC conversion, AI server power supplies, and advanced motor drives. It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems. The device is integrated in a 3.3 mm × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W. To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications. | 02.02.2026 13:30:00 | Feb | news_2026-02-15_14.jpg | \images\news_2026-02-15_14.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3254/epc-launches-its-first-seventh-generation%e2%80%afgen-7-egan-power-transistor-the-40%e2%80%afv-epc2366-into-mass-production | epc-co.com |
| Coin Cell Supercapacitors | Coin cell supercapacitors are compact electrochemi... | 13752 | Product Release | Coin Cell Supercapacitors | Coin cell supercapacitors are compact electrochemical energy storage devices with a high capacity that can quickly store and release electrical energy. Compared to conventional batteries, they offer several advantages, including high power density, a long cycle life, and fast charge and discharge rates. Supercapacitors have around 10% of the energy density of rechargeable batteries of the same weight. However, their power density is ten to a hundred times greater. Supercapacitors can therefore be charged and discharged much faster. They can also withstand many more charging cycles than rechargeable batteries, making them suitable as a replacement or supplement wherever high switching loads are required. The coin cell supercapacitors are used in a variety of applications, including backup power supplies, electronic devices, renewable energy systems and medical devices. While they are most commonly used for real-time clock backup, they can also be used for memory backup, battery swap ride-through and LED or audible alarms. The coin cell supercapacitors from Schurter are available for horizontal mounting (SCCA) or vertical mounting (SCCC). They can be used in systems with a voltage of up to 5.5 V and have a capacitance value ranging from 100 to 1,500 mF. | 29.01.2026 13:30:00 | Jan | news_2026-03-01_16.jpg | \images\news_2026-03-01_16.jpg | https://www.schurter.com/en/news/new-coin-cell-supercapacitors | schurter.com |
| High-Current, Low-Noise Shielded Power Inductor for Compact Power Systems | Sumida has launched the molded power inductors of ... | 13732 | Product Release | High-Current, Low-Noise Shielded Power Inductor for Compact Power Systems | Sumida has launched the molded power inductors of the 0615CDMCC/DS series, a low-profile magnetic component engineered to support increasingly power-dense electronics, including compact computing devices, servers, and advanced DC/DC converter architectures. The 0615CDMCC/DS series leverages metal compound molding construction - a key advancement over traditional ferrite inductor designs. By embedding the winding in a solid composite core, Sumida has eliminated internal air gaps and improved magnetic flux containment. This results in higher current capability and enhanced thermal performance, allowing the inductor to maintain stable inductance even as load current rises. Because the molding process naturally produces a shielded magnetic structure, the 0615CDMCC/DS series significantly reduces electromagnetic interference (EMI) and minimizes magnetic flux leakage into nearby circuitry without bulk. Engineers designing around noise-critical applications such as high-speed digital boards, RF-sensitive devices, and distributed power rails, gain flexibility in component placement without compromising signal integrity. The inductor is ultra-thin with a footprint of 7.3 mm × 6.8 mm × 1.5 mm max.), giving engineers a practical solution for mechanical envelopes that leave little headroom for vertically oriented components. With operation and storage temperature support from -55 °C to +125 °C, the 0615CDMCC/DS series is prepared for demanding thermal conditions across computing, industrial, and battery-powered platforms. Inductance values from 0.12 µH to 1.50 µH are currently available. | 28.01.2026 11:30:00 | Jan | news_2026-02-15_12.jpg | \images\news_2026-02-15_12.jpg | https://products.sumida.com/ProductsInfo/ProductGuide/PowerInductors/TypeDetail.php?type=0615CDMCC%2FDS | sumida.com |
| High Voltage Diodes | Dean Technology added two series to their medium p... | 13728 | Product Release | High Voltage Diodes | Dean Technology added two series to their medium power high voltage diode line: the FH Series and SH Series of diodes. The FH series and SH series were conceptualized and designed based on specific needs from customers. Using the technology of the legacy 2CL series diode line, these series offer higher current and significantly faster reverse recovery time, making them suited for applications with critical performance requirements such as X-ray equipment (medical, dental, industrial, and security), induction heating, and high voltage power supplies. SH series models are standard recovery, but the FH series offers a reverse recovery time (TRR) of 40 ns maximum, significantly faster than its 2CL predecessor (100 ns). The SH series units offer a maximum repetitive reverse voltage range (VRRM) from 8 to 15 kV at 200 to 350 mA of average forward current (IFAVM). The FH series offers a VRRM range of 2 to 30 kV at an IFAVM range of 100 to 700 mA. | 28.01.2026 07:30:00 | Jan | news_2026-02-15_8.png | \images\news_2026-02-15_8.png | https://www.deantechnology.com/two-new-series-of-enhanced-and-higher-voltage-diodes/ | deantechnology.com |
| GaN Technology Licensing Agreement | Vanguard International Semiconductor Corporation (... | 13722 | Industry News | GaN Technology Licensing Agreement | Vanguard International Semiconductor Corporation (VIS) has signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) for high-voltage (650 V) and low-voltage (80 V) Gallium Nitride technologies. This agreement will help VIS accelerate the development and expansion of next-generation GaN power technologies for applications such as data centers, automotive electronics, industrial control, and energy management. Through this licensing agreement, VIS will expand its GaN-on-Si technology into high-voltage applications and offer a GaN-on-Si platform for power applications. Combined with its existing GaN-on-QST technology platform, VIS claims to "become the only foundry in the world capable of offering power GaN technologies on both silicon and QST substrates". VIS will support complete product solutions covering low voltage (<200 V), high voltage (650 V) and ultra-high voltage (1200 V). The technology will be validated on VIS’ mature 8-inch manufacturing line to ensure process stability and high yield. Development activities are expected to commence in early 2026, with production scheduled for the first half of 2028. | 28.01.2026 07:00:00 | Jan | news_2026-02-15_2.jpg | \images\news_2026-02-15_2.jpg | https://www.vis.com.tw/en/press_detail?itemid=21379 | vis.com.tw |
| 600 V Super Junction MOSFET Platform | Alpha and Omega Semiconductor unveiled its α... | 13735 | Product Release | 600 V Super Junction MOSFET Platform | Alpha and Omega Semiconductor unveiled its αMOS E2™ 600 V Super Junction MOSFET platform. The first high-voltage product from the platform is AOS’ AOTL037V60DE2. The MOSFET is designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. AOS engineered its αMOS E2 High-Voltage Super Junction MOSFET platform with an intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short-circuits or start-up transients. The AOTL037V60DE2, available in a TOLL package, features a maximum R<sub>DS(on)</sub> of 37 mΩ. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current conditions at a junction temperature of 150°C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system-level reliability, ensuring robust performance even under abnormal operating scenarios. | 27.01.2026 14:30:00 | Jan | news_2026-02-15_15.jpg | \images\news_2026-02-15_15.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-its-powerful-amos-e2-600v-super-junction-mosfet-platform | aosmd.com |
| LDO Regulators with 500 mA Output Current | ROHM has developed the "BD9xxN5 Series" of LDO reg... | 13733 | Product Release | LDO Regulators with 500 mA Output Current | ROHM has developed the "BD9xxN5 Series" of LDO regulator ICs with 500 mA output current, featuring its proprietary ultra-stable control technology "Nano Cap™ ". This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure. ROHM developed the "BD9xxN1 Series" LDO regulator (150 mA output current) in 2022, incorporating its proprietary control technology, Nano Cap , which enables stable operation with output capacitors as small as 100 nF. The BD9xxN5 Series builds on the BD9xxN1 Series by increasing the output current to 500 mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250 mV (with load current variation of 1 mA to 500 mA within 1 µs) is achieved with a small output capacitance of 470 nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several µF and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6 mm × 0.3 mm), with capacities below 1 µF. This contributes to space saving as well as greater flexibility in component selection. | 27.01.2026 12:30:00 | Jan | news_2026-02-15_13.jpg | \images\news_2026-02-15_13.jpg | https://www.rohm.com/news-detail?news-title=2026-01-27_news_ldo&defaultGroupId=false | rohm.com |
| IGBT Series for Solar and Energy Storage Systems | Magnachip Semiconductor launched a series of IGBTs... | 13698 | Product Release | IGBT Series for Solar and Energy Storage Systems | Magnachip Semiconductor launched a series of IGBTs designed for solar inverters and industrial Energy Storage Systems (ESS). These 650 V and 1200 V generation discrete IGBT products provide improved Reverse Bias Safe Operating Area for stable and reliable performance under harsh high-voltage and high-current conditions. The products are available in both standard TO-247 and high-capacity TO-247 Plus packages. Specifically, the cell pitch has been reduced by approximately 40 %, increasing current capacity within the same die area. Magnachip plans to further expand its product lineup in the first half of 2026 by introducing a high-current series rated up to 650 V / 150 A, as well as new 750 V products. The company also plans to add the ‘TO-247-4Lead’ package, featuring a Kelvin pin for improved switching efficiency. | 22.01.2026 11:30:00 | Jan | news_2026-02-01_14.png | \images\news_2026-02-01_14.png | https://www.magnachip.com/magnachip-targets-solar-and-energy-storage-systems-markets-with-new-generation-of-high-efficiency-igbt-series/ | magnachip.com |
| Sintered Metal Shunt Resistors | ROHM has developed the UCR10C Series, which is cla... | 13694 | Product Release | Sintered Metal Shunt Resistors | ROHM has developed the UCR10C Series, which is claimed to deliver "the industry’s highest rated power for 2012-size shunt resistors (10 mΩ to 100 mΩ)". The devices form a copper-based resistive element on an alumina substrate via sintering, achieving rated powers of 1.0 W and 1.25 W. This enables the replacement of products with wide terminal types or larger alternatives, facilitating miniaturization and reducing the number of components required. Furthermore, the use of a metal resistive element achieves a low TCR (0 to +60 ppm/°C). This minimizes errors due to temperature changes, enabling high-precision current sensing. Moreover, it achieves the same level of durability as the metal plate types in temperature cycle testing (-55 °C / +155 °C, 1000 cycles). | 22.01.2026 07:30:00 | Jan | news_2026-02-01_10.jpg | \images\news_2026-02-01_10.jpg | https://www.rohm.com/news-detail?news-title=2026-01-22_news_resistor&defaultGroupId=false | rohm.com |