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| German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company | Infineon Technologies has acquired C2i Semiconduct... | 13937 | Industry News | German Semiconductor Manufacturer acquires Indian Semiconductor Power Tech Company | Infineon Technologies has acquired C2i Semiconductors, a Bangalore-based technology company specializing in software-defined multiphase controllers and smart power stages for AI data center applications. C2i Semiconductors’ technology is said to complement Infineon’s portfolio of power semiconductors and power systems, enabling intelligent and scalable power delivery architectures from grid to core for AI servers and high-performance computing platforms. The transaction is expected to close in the third quarter of calendar year 2026. This acquisition aims to strengthen Infineon’s position in power solutions for AI data centers and create a center of excellence for digital power technologies in India. C2i Semiconductors brings expertise in software-defined power management and system-level power architectures. Software-defined power solutions combine advanced power semiconductors with intelligent digital control and software algorithms to optimize power conversion, regulation and system performance in real time. As increasingly powerful AI processors create highly dynamic and rapidly changing power demands, power delivery systems must respond faster and more precisely to sudden load fluctuations while maintaining efficiency and system stability. By adding intelligence to the power delivery architecture, software-defined solutions help data center operators improve efficiency, reduce power losses, and support the increasing power density requirements of next-generation AI processors. C2i Semiconductors’ technology takes a system-level approach to power delivery, spanning the path from grid to core and enabling more intelligent and adaptive power architectures for AI infrastructure. | 24.08.2026 12:00:00 | Aug | news_2026-09-01_7.png | \images\news_2026-09-01_7.png | https://www.infineon.com/press-release/2026/infpr202608-129 | infineon.com |
| Zait Akcam appointed as Managing Director of GVA | GVA Leistungselektronik has appointed Zait Akcam a... | 13931 | People | Zait Akcam appointed as Managing Director of GVA | GVA Leistungselektronik has appointed Zait Akcam as its new Managing Director. Mr. Akcam is already well known to many customers and partners through his many years as Head of Sales at the Mannheim/Germany-based company. With more than 30 years of experience in the semiconductor industry and his knowledge of international markets, he brings considerable industry and management expertise to his new role. In his new position, Akcam will drive the continued development of GVA, with a particular focus on the needs of customers and partners. One of his key priorities will be the ongoing development of the company’s product and service portfolio. The aim is to further strengthen GVA’s position as a trusted partner in power electronics and to continue providing customers with innovative solutions combined with the high level of service they have come to expect. | 22.08.2026 06:00:00 | Aug | news_2026-09-01_1.jpg | \images\news_2026-09-01_1.jpg | https://www.gva-power.de/en/ | gva-power.de |
| 650 W Thick Film Power Resistors | The power capabilities and compact package of thes... | 13947 | Product Release | 650 W Thick Film Power Resistors | The power capabilities and compact package of these devices by Vishay allow designers to reduce the number of parallel resistors required. Their performance is supported by a "cold system" baseplate design that enables efficient heat transfer to an external heatsink, maintaining stable operation over a wide temperature range from -55 °C to +155 °C. RPWA 650 series devices integrate a power resistor and optional embedded NTC temperature sensor in a single housing. Customizable cabling and an easy-mount design with self-calibrating pressure eliminate the need for board-level soldering, reduce wiring and assembly complexity, and enable faster plug and play integration in power modules and assemblies. Available in a range of resistance values from 6.2 Ω to 1 MΩ, with tolerances down to ± 5 %, the RPWA 650 series supports a variety of circuit functions, including precharge, discharge, active discharge, power conversion, and snubber operations. The devices are suited for automotive, energy, industrial, medical, and avionics systems used in harsh environments. Their maximum operating voltage is specified up to 6000 V<sub>DC</sub> with a dielectric strength to 7000 V<sub>RMS</sub>, and typical self-inductance of ≤ 40 nH. For high voltage and fast-switching circuits, this combination enables accurate energy dissipation and minimizes transient overshoot. The devices also offer a pulse energy capability, supporting repetitive operation up to 3.5 J per pulse for 50 μs pulses. The RoHS-compliant resistors are pending AEC-Q200 qualification. | 20.08.2026 15:30:00 | Aug | news_2026-09-01_17.jpg | \images\news_2026-09-01_17.jpg | https://www.vishay.com/en/company/press/releases/2026/RPWA-650/ | vishay.com |
| Collaboration on Battery Management Systems and Integrated PowerBox Solutions | Schaeffler and CATL have signed a memorandum of un... | 13936 | Industry News | Collaboration on Battery Management Systems and Integrated PowerBox Solutions | Schaeffler and CATL have signed a memorandum of understanding (MoU) in the field of e-mobility for the joint development of Battery Management Systems (BMS) and "X-in-1" Integrated PowerBox (IPB) solutions. The collaboration builds on an already secured customer project and addresses the growing demand for electrification solutions in the European market. Both companies are pursuing a long-term partnership. | 20.08.2026 11:00:00 | Aug | news_2026-09-01_6.jpg | \images\news_2026-09-01_6.jpg | https://www.schaeffler.com/en/media/press-releases/press-releases-detail.jsp?id=88211712 | schaeffler.com |
| 18 V GaN FET e.g. for Next-Generation AI Power Architectures | Efficient Power Conversion (EPC) announced the mas... | 13939 | Product Release | 18 V GaN FET e.g. for Next-Generation AI Power Architectures | Efficient Power Conversion (EPC) announced the mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN® FET engineered to enhance the efficiency and power density of next-generation AI server power supplies. The EPC2370 has a 22 V transient voltage rating that allows it to replace MOSFETs with ratings up to 25 V. AI power architectures are transitioning to 800 V DC power distribution, adopting 6 V high-density, multi-kilowatt intermediate bus converters operating at 1 MHz. Developed on EPC’s seventh-generation GaN platform, the EPC2370 delivers a benchmark 101 A continuous current rating, 0.28 mΩ typical R<sub>DS(on)</sub>, 26 nC gate charge in a 3.3 mm × 3.3 mm thermally enhanced, dual-side-cooled PQFN package. The EPC2370 is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. Its 18 V continuous and 22 V transient ratings provide voltage margin for reliable operation while enabling peak efficiencies of 98 % and full-load efficiencies of 97 % in high-density power modules. Beyond AI servers, the EPC2370 is also suited for high-current DC/DC converters used in high-performance computing, telecommunications infrastructure, and advanced industrial power systems. To accelerate evaluation and product development, EPC also offers the EPC90168 evaluation board. Measuring 2" × 2", the EPC90168 features two EPC2370 GaN FETs configured as a half bridge. The board includes all critical components and an optimized layout to maximize switching performance. It also provides multiple probe points for convenient waveform measurements and efficiency evaluation. | 20.08.2026 07:30:00 | Aug | news_2026-09-01_9.jpg | \images\news_2026-09-01_9.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3353/epc-announces-mass-production-of-epc2370-18-v-gan-fet-for-next-generation-ai-power-architectures | epc-co.com |
| 1 W Isolated DC/DC Converters for Medical and ITE Applications | Bel Fuse launched its PTM1-S Series, a family of 1... | 13946 | Product Release | 1 W Isolated DC/DC Converters for Medical and ITE Applications | Bel Fuse launched its PTM1-S Series, a family of 1 W isolated DC/DC converters engineered to meet the growing demand for medically certified, high-isolation power in compact form factors. Housed in an encapsulated SIP-7 package, the series is built for medical instrumentation, harsh-environment equipment, and industrial control systems that require both dual medical and ITE safety certification in a single part. The PTM1-S Series offers 6000 V<sub>DC</sub> isolation and reinforced insulation rated for 300 V<sub>AC</sub>, protecting against surges and cross-circuit faults in applications where isolation integrity is critical. The series is dual certified to UL/IEC 62368 for information technology equipment and EN 60601 and 2xMOOP for medical use, giving engineers the flexibility to qualify a single part number across both medical and industrial designations rather than stocking separate solutions for each. The converters are rated for continuous operation across an extended -40 °C to +100 °C temperature range, making them well suited to harsh outdoor and industrial environments as well as controlled clinical settings. With a 1:1 input-to-output voltage ratio, the initial lineup spans 5, 12, 15, and 24 V<sub>DC</sub> input options with 5 and 12 V<sub>DC</sub> single outputs, covering the input rails most common in medical and industrial control platforms. | 19.08.2026 14:30:00 | Aug | news_2026-09-01_16.jpg | \images\news_2026-09-01_16.jpg | https://www.belfuse.com/resources/news/bel-launches-ptm1-s-series-1w-isolated-dc-dc-converters-for-medical-and-ite-applications | belfuse.com |
| Palm-sized Split Core Current Sensors with Accuracy up to 0.01 % | Yokogawa Test & Measurement released its second-ge... | 13943 | Product Release | Palm-sized Split Core Current Sensors with Accuracy up to 0.01 % | Yokogawa Test & Measurement released its second-generation of AC/DC split core current sensors, the CT500SA and CT200SA. Designed specifically for space-constrained environments, such as in-vehicle xEV testing, they offer accurate current measurements for the 200 A and 500 A ranges. The sensors are compatible with both power analyzers and waveform measurement instruments. The main sensor unit of both devices measures 110 mm width × 62 mm height × 25 mm depth. Each features a single unlock-and-open button for one-handed clamp-on installation, while the body includes both an M4 screw hole and a cable tie slot to secure the sensor in place. The CT500SA and CT200SA guarantee accuracy of ±0.1 % from -40 ? to 85 ?. Within 23±5 ? range this improves further still, achieving a peak accuracy of ±0.09 % of reading +0.01 % of full scale. Both models guarantee accuracy "one order of magnitude higher than that of conventional current sensors", equivalent to through-hole types but with the convenience of clamp-on installation. Available frequency bandwidths differ between the two models. The CT500SA delivers a bandwidth of 500 kHz (-3 dB), while the CT200SA extends to 1 MHz (-3 dB). The CT200SA and CT500SA can also measure switching frequencies, used for motor inverter validation and requiring wideband measurement. Both models hold a phase accuracy of ±0.1° (0.1 Hz ≤ f ≤ 1 kHz). Major Target Markets are EV/xEV, Automotive, Renewable energy: Photovoltaic (PV) / solar and HVAC. | 19.08.2026 11:30:00 | Aug | news_2026-09-01_13.jpg | \images\news_2026-09-01_13.jpg | https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-to-release-ct500sa-and-ct200sa-acdc-split-core-current-sensors/ | tmi.yokogawa.com |
| Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules | Sumitomo Bakelite has developed a high-power-densi... | 13940 | Product Release | Pressureless Ag Semi-Sintering TIM suited for 3D Power Modules | Sumitomo Bakelite has developed a high-power-density 3D SiC-MOSFET power module with a resin-insulated dual-layer structure through joint research with Tohoku University. By optimizing the thermal expansion characteristics and elastic modulus of the resin insulated substrate and epoxy molding compound, Sumitomo Bakelite significantly reduced module warpage. In addition, the adoption of an Ag semi-sintering bonding material improved bonding reliability with the heat sink. By replacing conventional ceramic insulated substrates with resin-insulated substrates, the mismatch in the coefficients of thermal expansion between the substrate and copper is significantly reduced, suppressing power module warpage to 20 μm or less. The use of resin-insulated substrates suppresses module warpage caused by differences in thermal expansion between substrate materials. This enables a thinner Thermal Interface Material (TIM) layer between the module and the heat sink, significantly reducing thermal resistance while ensuring highly reliable bonding to the heat sink and significantly improving mountability. Ag semi-sintering TIM enables low-temperature, pressureless bonding, unlike conventional soldering and sintered-silver bonding processes that require high temperatures and high pressure, thereby reducing the thermal stress applied to the module. In addition, its high adhesion and low elastic modulus enable a bond-line thickness of less than 100 μm while significantly improving the reliability and durability of the bonding layer between the module and the heat sink. Compared with industry-standard solutions, this technology is said to make it possible to reduce the volume of power units by approximately 50 %. | 18.08.2026 08:30:00 | Aug | news_2026-09-01_10.png | \images\news_2026-09-01_10.png | https://www.sumibe.co.jp/english/topics/2026/it-materials/0804_01/index.html | sumibe.co.jp |
| Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications | Panasonic Industry Europe released the ECWFJ serie... | 13944 | Product Release | Metallized Polypropylene Film Capacitors for Industrial and Automotive Applications | Panasonic Industry Europe released the ECWFJ series of metallized polypropylene film capacitors. The series is aimed at engineers working across industrial and automotive power electronics (it is qualified to AEC-Q200 standards) who require dependable performance under demanding environmental conditions. The ECWFJ series demonstrates resistance to moisture, maintaining stable operation under conditions of 40 °C and 95 % relative humidity for up to 1.000 hours. Typical application areas include electric mobility systems such as DC/DC converters, on-board chargers and e-compressors, along with solar inverters and EV charging infrastructure. The series is also designed for use in industrial power supplies, LED lighting, smart meters and embedded power systems, where consistent electrical performance and durability are essential. Technically, the ECWFJ series covers DC voltage ratings from 600 V up to 1.100 V. Capacitance values range from 1 μF up to 12 μF. The capacitors operate across a temperature range from -40 °C up to +110 °C, with the 1.000 V variant rated up to 105 °C. The devices are engineered to withstand thermal shock from -55 °C up to 85 °C over 1.000 cycles and can tolerate maximum ambient temperatures of up to 125 °C for limited durations. Panasonic’s proprietary patterned metallization with an integrated fuse mechanism helps ensure stable capacitance over the lifetime of the component and enhances overall system reliability. The design is complemented by a flame-retardant plastic enclosure and non-conductive resin, supporting compliance with UL and other regulatory standards. In addition, the capacitors are fully compliant with RoHS requirements. | 17.08.2026 12:30:00 | Aug | news_2026-09-01_14.jpg | \images\news_2026-09-01_14.jpg | https://industry.panasonic.eu/company/newsroom/film-capacitor-cost-effective-ECWJF | industry.panasonic.eu |
| Acquisition of High-Voltage Product Line | Dean Technology (DTI) and HVP High Voltage Product... | 13934 | Industry News | Acquisition of High-Voltage Product Line | Dean Technology (DTI) and HVP High Voltage Products of Munich, Germany, have announced an addition to their catalog of products. DTI and HVP have jointly acquired the high voltage measurement and driver businesses of North Star High Voltage (NSHV), a manufacturer of high voltage probes. NSHV has developed and defined high voltage measurement for the last 24 years. Their high voltage probes are designed to provide high accuracy while providing wide bandwidth capability, rugged packaging, and overall convenience. Two main types of probes are available – the PVM series designed for portability, and the VD series optimized for long life and accuracy. Both types of probes can be used with 1 MΩ input oscilloscopes standard, or with meters of various input impedances. | 17.08.2026 09:00:00 | Aug | news_2026-09-01_4.png | \images\news_2026-09-01_4.png | https://www.deantechnology.com/dti-hvp-acquires-new-high-voltage-product-line/ | deantechnology.com |
| Digital Isolators in Quad-Channel Configuration | Toshiba Electronics Europe has expanded its DCL34x... | 13942 | Product Release | Digital Isolators in Quad-Channel Configuration | Toshiba Electronics Europe has expanded its DCL34xx0B series of standard digital isolators with four quad-channel devices for industrial automation equipment. These devices achieve a typical current consumption of 0.2 mA per channel while supporting data rates of up to 25 Mbit/s. Applications include programmable logic controllers (PLCs), I/O interfaces, sensors, actuators, motor drives, inverters and switching power supplies. The DCL34xx0B series operates from supply voltages of 2.25 V to 5.5 V and provides a minimum isolation voltage of 3000 V<sub>rms</sub>. Housed in a SSOP16 package, the devices support operation across a temperature range of -40 °C to +125 °C. Using Toshiba’s magnetic-coupling isolation technology, these devices provide isolated signal transmission with a common-mode transient immunity (CMTI) of 30 kV/μs (min). The additions comprise the DCL340L0B and DCL340H0B with four forward channels and zero reverse channels (4:0), and the DCL342L0B and DCL342H0B with two forward channels and two reverse channels (2:2). | 13.08.2026 10:30:00 | Aug | news_2026-09-01_12.jpg | \images\news_2026-09-01_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260813-1.html | toshiba.semicon-storage.com |
| Silicone-free Thermal Conductive Paste | To compensate for even the smallest air pockets be... | 13945 | Product Release | Silicone-free Thermal Conductive Paste | To compensate for even the smallest air pockets between the contact pairs, Fischer Elektronik is expanding its product range of thermal interface materials to include a high-performance, silicone- and solvent-free thermal conductive paste. This thermal paste, with the product code WLPF 36 035, has a thermal conductivity of 3.6 W/m•K and is CRM-free; it is therefore not subject to any additional training requirements. The paste contains no metallic fillers, is electrically insulating and is claimed to offer high long-term stability with good creep properties. The WLPF 36 035 thermal grease can be used within a temperature range of -60 °C to +100 °C and is supplied in a 35 g tin. Other types and sizes of packaging can be produced to customer specifications on request. | 11.08.2026 13:30:00 | Aug | news_2026-09-01_15.jpg | \images\news_2026-09-01_15.jpg | https://www.fischerelektronik.de/en/latest-news/news/2026-fischer-pressemitteilungen/new-silicone-freehigh-performance-thermal-conductive-paste/ | fischerelektronik.de |
| Manufacturing Facility in Guadalajara, Mexico, opened | Indium Corporation has opened a manufacturing faci... | 13935 | Industry News | Manufacturing Facility in Guadalajara, Mexico, opened | Indium Corporation has opened a manufacturing facility in Guadalajara, Mexico. This 1,230-square-meter facility will manufacture solder paste, cored wire, and wave flux products to support customers throughout the Americas and global markets. Production will initially focus on Indium Corporation’s best-selling paste series Indium8.9HF and Indium10.8HF. This marks the first phase of the company’s long-term manufacturing investment in Mexico, with more capabilities planned as the facility grows to meet customer demand. At full capacity, the Guadalajara facility is expected to produce approximately 18–20 metric tons of solder paste per month. In addition to manufacturing and operational roles, the site will house customer service and technical support teams. | 11.08.2026 10:00:00 | Aug | news_2026-09-01_5.jpg | \images\news_2026-09-01_5.jpg | https://www.indium.com/press-releases/indium-corporation-opens-new-manufacturing-facility-in-guadalajara-mexico-expanding-global-production-network/ | indium.com |
| TVS Diodes for simplified ISO 7637 Load-Dump Protection | Littelfuse announced the TPSMD-FL Series FlatSuppr... | 13941 | Product Release | TVS Diodes for simplified ISO 7637 Load-Dump Protection | Littelfuse announced the TPSMD-FL Series FlatSuppressX™ TVS Diodes, a family of automotive-grade transient voltage suppression devices designed to simplify ISO 7637-2 Pulse 5b load-dump protection for 12 V vehicle electronics. Unlike conventional TVS diodes that can allow transient voltages to rise to levels requiring additional protection circuitry, the TPSMD-FL Series leverages proprietary FlatSuppressX™ technology to maintain a low, flat, and stable clamping voltage profile during high-energy transient events. This enables designers to meet demanding automotive load-dump requirements with lower clamping fewer external components, reducing design complexity and PCB space requirements. Rated for 3000 W peak pulse power dissipation and housed in a compact surface-mount DO-214AB package, the TPSMD-FL Series is optimized to protect sensitive automotive electronics from high-energy surges. The devices are AEC-Q101 qualified and designed specifically for applications requiring compliance with ISO 7637-2 Pulse 5b load-dump standards. They provide IEC 61000-4-2 ESD protection up to 30 kV air and contact discharge. The TPSMD-FL Series is suited for automotive applications operating on 12 V power rails. | 11.08.2026 09:30:00 | Aug | news_2026-09-01_11.jpg | \images\news_2026-09-01_11.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-tpsmd-fl-tvs-diodes-for-simplified-iso-7637-load-dump-protection | littelfuse.com |
| Quad-Channel Digital Isolators for High-Temperature Applications | Toshiba Electronics Europe has expanded its standa... | 13927 | Product Release | Quad-Channel Digital Isolators for High-Temperature Applications | Toshiba Electronics Europe has expanded its standard digital isolator line-up with the DCL54xx01A series, comprising ten quad-channel devices that support data rates of up to 150 Mbps and operate at temperatures up to 125 °C. Target industrial automation applications include programmable logic controllers (PLCs), I/O interfaces, motor control, inverters and switching power supplies. The DCL54xx01A series operates from 2.25 V to 5.5 V and provides an isolation voltage of 5000 V<sub>rms</sub> for one minute. Typical propagation delay is 10.9 ns, while typical pulse-width distortion is 0.8 ns. The devices are housed in an SOIC16-W package and operate from -40 °C to +125 °C, making them suitable for industrial systems in high-temperature environments. The series is available in 4:0, 3:1 and 2:2 forward/reverse channel-direction configurations. Devices are also available with different default output states and enable-control options. | 06.08.2026 12:30:00 | Aug | news_2026-08-15_12.jpg | \images\news_2026-08-15_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/08/isolators-solid-state-relays-20260806-1.html | toshiba.semicon-storage.com |
| Power Operational Amplifier Family | Apex Microtechnology released three precision powe... | 13923 | Product Release | Power Operational Amplifier Family | Apex Microtechnology released three precision power operational amplifiers - the PA167, PA168, and PA169 - delivering up to 20 % higher thermal performance than previous generations. The PA167 is a high-voltage MOSFET operational amplifier featuring a monolithic amplifier core designed for applications requiring high output voltage or output current density. Operating up to 205 V, the device delivers 1 A of continuous output current in the standard version and 2 A in the A-grade version, with up to 6 A peak current and 33 W of internal power dissipation. The PA168 operates up to 200 V with 8 A of continuous output current, 12 A peak current, and 52 W of internal power dissipation. Separate power supplies for the amplifier core and output stage allow designers to optimize voltage swing and overall system efficiency. The PA169 integrates two independent high-voltage amplifier channels into a 52-pin QFP package, delivering dual 200 V, 2 A continuous (6 A peak) amplifier channels with up to 52 W of internal power dissipation for applications requiring multiple high-performance amplifier channels in a single package. All three devices utilize Apex’s monolithic MOS technology and incorporate integrated protection features including temperature-compensated current limiting with over-current flag indication and amplifier disable functionality. Housed in a 20 mm × 20 mm PQ package, the devices are targeted towards applications like high-density voltage and current sources, electrostatic transducers, beam and mirror deflection systems, deformable mirror focusing, piezoelectric positioning, and other precision motion control applications. | 06.08.2026 08:30:00 | Aug | news_2026-08-15_8.jpg | \images\news_2026-08-15_8.jpg | https://www.apexanalog.com/press/product-news-pq-expansion.html | apexanalog.com |
| 2200 V GaN Technology | Power Integrations announced that PowiGaN™ g... | 13922 | Product Release | 2200 V GaN Technology | Power Integrations announced that PowiGaN™ gallium-nitride (GaN) technology is now rated at up to 2200 V, which is according to the company "far exceeding the voltage capabilities of all other commercially available GaN technologies". This positions PowiGaN well for high-voltage data centers, EVs, renewable energy and HVDC infrastructure as they leverage higher-voltage bus architectures in search of greater power density. GaN power switches are steadily supplanting silicon transistors in a wide range of power conversion applications thanks to their higher efficiency and switching frequencies. However, GaN technology must keep pace with data center, EV, renewables and HVDC infrastructure roadmaps calling for higher voltages and greater power density. Alternatives include lower-frequency silicon carbide or arrays of stacked, lower-voltage GaN devices. PowiGaN ICs rated at 1700 V are already being designed into single-stage data center auxiliary power applications, while 1250 V PowiGaN offers a simpler alternative to stacked solutions in the main power path in 800 V<sub>DC</sub> data centers. In addition to data centers other possible applications are e.g. EVs, photovoltaic inverters and battery-energy storage systems. | 05.08.2026 07:30:00 | Aug | news_2026-08-15_7.jpg | \images\news_2026-08-15_7.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-Demonstrates-Worlds-First-2200-V-GaN-Technology-for-Next-Era-High-Voltage-Power-Systems/default.aspx | power.com |
| Custom Magnetics Research and Development Center opened in Northern Germany | Bourns has opened a research, development, and des... | 13932 | Industry News | Custom Magnetics Research and Development Center opened in Northern Germany | Bourns has opened a research, development, and design center for its custom magnetics operations in Rosdorf near Göttingen/Germany. The facility brings together the full 44-person engineering, prototyping, and design team - the same group that has been developing custom magnetic components at this site since Bourns acquired Kaschke Components in 2021 - in a renovated 3,000-square-meter building. Production of inductive components continues at Bourns’ manufacturing sites in Tunisia. The move comes after Bourns wound down ferrite production at the team’s previous location, leaving it in a building that was too large for an engineering and design operation. Rather than adapt the old space, Bourns chose to start fresh. The center includes a prototype workshop with separate areas for measurement technology and qualification equipment - tools the engineering team needs to move from concept to tested design without leaving the building. After renovation there are now 17 offices where each engineer has a permanent desk, a soundproof booth for uninterrupted work, two meeting rooms, and a work café - all designed with the home office as the benchmark to beat. Heating and cooling come from a geothermal system feeding two heat pumps. Rainwater drains into a surrounding basin and two on-site ponds rather than the municipal system. Bourns also added electric vehicle charging stations for employees. All renovation work - interior fit-out, electrical, painting, fire safety - was handled by local companies based in the German federal state of Lower Saxony. | 05.08.2026 07:00:00 | Aug | news_2026-09-01_2.jpg | \images\news_2026-09-01_2.jpg | https://www.bourns.com/news/press-releases/pr/2026/08/05/bourns-opens-custom-magnetics-research-and-development-center-in-goettingen--germany | bourns.com |
| Silicon Photovoltaics Make Power Generation in Space More Cost-Effective | Source Energy and the Fraunhofer Institute for Sol... | 13933 | Industry News | Silicon Photovoltaics Make Power Generation in Space More Cost-Effective | Source Energy and the Fraunhofer Institute for Solar Energy Systems ISE have jointly developed a product line for space satellites based on silicon solar cells. The solar arrays use a special interconnection technology. Combined with inexpensive silicon solar cells, this enables modules at much lower costs compared to standard III-V technology currently dominating the space sector. The high cost and limited availability of solar cells based on III-V materials are major constraints for commercial missions, particularly Low Earth Orbit (LEO) satellites. The resulting solar modules are compact and lightweight: 64 g and 629 cm², (321 mm by 209 mm). The average power output of the prototypes was 15.6 W – with modules achieving 16.1 W – and an average active area efficiency of 18.8 % (AM0 at 25 °C). At 252 W/kg, the module’s specific power is competitive with other silicon modules in its class. The silicon solar cells are interconnected using shingle-matrix technology, where individual solar cells are cut into strips and arranged with certain overlap and spacing relative to one another, like brickwork. An electrically conductive adhesive bonds the solar cells together. The machine manufacturer M10 Solar Equipment GmbH has developed an industrial stringer for shingle-matrix technology. If the solar panel is damaged – for example, by a small meteorite or space debris – the matrix arrangement of the solar cells allows the current to simply flow around the damaged area. Rows and columns of solar cells in the layout can be flexibly adjusted depending on the satellite’s voltage and current requirements. | 04.08.2026 08:00:00 | Aug | news_2026-09-01_3.jpg | \images\news_2026-09-01_3.jpg | https://www.ise.fraunhofer.de/en/press-media/press-releases/2026/silicon-photovoltaics-make-power-generation-in-space-more-cost-effective.html | ise.fraunhofer.de |
| Wide-Terminal Metal Foil Current Sense Resistors | Bourns announced the CFG-A Series Wide-Terminal Me... | 13926 | Product Release | Wide-Terminal Metal Foil Current Sense Resistors | Bourns announced the CFG-A Series Wide-Terminal Metal Foil Current Sense Resistors, available in 0508 and 0612 footprints. Rated up to 2 W (0612 footprint rated at 2 W at 70 °C; 0508 rated up to 1.5 W), and covering a resistance range of 1–30 mΩ, the CFG-A Series is AEC-Q200-compliant and designed for automotive power electronics, motor drives, and other high-reliability applications where accurate, thermally stable current measurement is required. Automotive electrification, spanning 12 V to 48 V mild-hybrid architectures and beyond, is raising current sensing accuracy requirements while simultaneously compressing available board space. This metal foil element in the CFG-A Series delivers a TCR down to ±50 ppm/°C for values ≥5 mΩ (model-dependent), maintaining measurement accuracy across the -55 °C to +155 °C operating range and better stability under sustained load. The wide-terminal geometry lowers thermal resistance from the resistive element to the PCB, reducing localized heating and improving long-term drift performance. Its value range spans from 1–10 mΩ (CFG0508A) and 1–30 mΩ (CFG0612A) with ±1% and ±5% tolerances. | 03.08.2026 11:30:00 | Aug | news_2026-08-15_11.jpg | \images\news_2026-08-15_11.jpg | https://www.bourns.com/news/press-releases/pr/2026/08/03/bourns-introduces-cfg-a-series-wide-terminal-metal-foil-current-sense-resistors-for-automotive-and-high-reliability-applications | bourns.com |
| President of Danfoss Power Electronics appointed | Danfoss Power has appointed Kern Jain as President... | 13918 | People | President of Danfoss Power Electronics appointed | Danfoss Power has appointed Kern Jain as President of Danfoss Power Electronics. He most recently served as Segment CFO of Danfoss Power Electronics and Drives and brings more than 20 years of experience in global technology and pharmaceutical companies. Mr. Jain has started in his new role as President of Danfoss Power Electronics on 1 August 2026. He succeeds Dominic Dorfner, who has left the company at his own request. Over the past months, the two worked closely together to ensure a smooth handover, allowing Jain to meet customers and colleagues ahead of his official start. The Danfoss business unit develops and markets power electronics products and solutions under the established Semikron Danfoss brand. The leadership transition coincides with the renaming of the business unit from Semikron Danfoss to Danfoss Power Electronics, reflecting being part of the Danfoss Group’s core electrification business. The established Semikron Danfoss brand will be retained for products and solutions. Within the Danfoss Group, the Power Electronics and Drives segment operates two distinct businesses: Danfoss Drives and Danfoss Power Electronics. | 01.08.2026 07:00:00 | Aug | news_2026-08-15_3.jpg | \images\news_2026-08-15_3.jpg | https://www.semikron-danfoss.com/about-semikron-danfoss/news-events/news/kern-jain-appointed-president-of-danfoss-power-electronics | semikron-danfoss.com |
| High-Voltage Power Supply for High-Precision Applications | DBK David + Baader has expanded its portfolio with... | 13938 | Product Release | High-Voltage Power Supply for High-Precision Applications | DBK David + Baader has expanded its portfolio with Vantys, a high-voltage power supply designed for high-precision measurement, analytical, and testing systems. Vantys targets applications where even the smallest deviations in output voltage can directly affect measurement accuracy, process stability, and system availability. The power supply features a fast and stable regulation, enabling rapid adaptation to changing operating conditions. At the same time, it offers integration flexibility through analog and digital interfaces as well as SCPI-compatible control. This simplifies integration into existing systems and reduces engineering effort. Typical applications include medical technology systems such as X-ray and CT equipment, as well as analytical and scientific applications including mass spectrometry and electron microscopy. The power supply is also suitable for security and inspection systems, such as X-ray screening equipment, and industrial processes utilizing ionization technology. In addition to precision and regulation performance, long-term system availability was a key development focus. With a design lifetime of at least 50,000 hours, a wear-free solid-state architecture, and integrated self-diagnostics and safe-state functions, Vantys helps reduce maintenance requirements and unplanned downtime. The system is based on a scalable architecture and can be configured for different voltage ranges. Development is carried out using automotive-grade components. | 01.08.2026 06:30:00 | Aug | news_2026-09-01_8.jpg | \images\news_2026-09-01_8.jpg | https://www.industrial-eu.dbk-group.com/all-products/high-voltage-power-supply-vantys | industrial-eu.dbk-group.com |
| "Engineer Social Hub": Engineers supporting Engineers | ROHM launched the English-language version of Engi... | 13920 | Industry News | "Engineer Social Hub": Engineers supporting Engineers | ROHM launched the English-language version of Engineer Social Hub, an online platform designed to make the company’s technical information, know-how, and support more accessible to engineers. Engineer Social Hub brings together ROHM’s technical content related to semiconductor products and solutions in one place. Through product-specific FAQs and discussions, as well as a chatbot, users can search for solutions to technical questions and obtain direct support from ROHM engineers. Previously, when users encountered technical challenges, they often needed to contact ROHM individually or make inquiries through distributors. Via the Engineer Social Hub, users can now access ROHM’s technical information and know-how online – anytime and from anywhere. FAQs and discussions on the site can be read and searched without logging in. If users are unable to find the information they need, they can register as members and post questions in discussions, enabling them to explore solutions in greater depth. The site also provides documents and videos explaining how to use Engineer Social Hub. Going forward, ROHM will continue to evolve Engineer Social Hub into a community in which not only ROHM and users, but also users themselves, can communicate with one another to generate new ideas and solutions. Through this initiative, ROHM aims to contribute to solving engineers’ technical challenges by creating a site where engineers connect, create, and collaborate. | 30.07.2026 08:00:00 | Jul | news_2026-08-15_5.png | \images\news_2026-08-15_5.png | https://www.rohm.com/news-detail?news-title=2026-07-30_news&defaultGroupId=false | rohm.com |
| Harnessing Leakage Inductance | Würth Elektronik is expanding its WE-MCRI product ... | 13928 | Product Release | Harnessing Leakage Inductance | Würth Elektronik is expanding its WE-MCRI product series with the 1090HL variant (HL = High Leakage), a coupled inductor specifically designed to improve the performance of SEPIC, ZETA and Ćuk converters. This double choke takes an unconventional approach by deliberately harnessing leakage inductance, which is normally treated as a parasitic element in conventional designs. The coupled inductor enables more effective filtering for improved EMC performance with a far more compact design. By using the molded double choke, which measures 11 × 10 × 9 mm³, ripple current reduction can be achieved with a lower inductance value. Cost and space are reduced compared with using two separate inductors. This special component also requires a smaller AC coupling capacitor, without sacrificing efficiency while enabling a more compact design. As a molded coupled inductor, this component delivers temperature-stable and soft saturation performance. | 29.07.2026 13:30:00 | Jul | news_2026-08-15_13.jpg | \images\news_2026-08-15_13.jpg | https://www.we-online.com/en/news-center/press/press-releases?d=we-mcri-high-leakage | we-online.com |
| 12 V Automotive eFuse supports Software-defined Vehicles | Infineon Technologies has expanded its automotive ... | 13925 | Product Release | 12 V Automotive eFuse supports Software-defined Vehicles | Infineon Technologies has expanded its automotive power distribution portfolio with the SPOC™ Wire Guard BTS80009 SWPx 1ES, a 12 V automotive eFuse with SPI interface. As the first member of a smart power switch family, it combines a protected high-side switch with integrated I²t wire protection, software configurability, and advanced diagnosis. It is designed for new E/E architectures that support SDV concepts with over-the-air updates. The SPOC Wire Guard BTS80009 SWPx 1ES automotive eFuse provides failure isolation within µs as well as current sensing, avoiding overdimensioning of the wire diameter compared with traditional melting fusesFor permanently powered loads, the product features a dedicated idle mode with a power consumption of a few μA while maintaining full protection. Its 24-bit SPI interface is daisy-chain-capable. Supporting platform reuse across vehicle variants, the configuration and protection parameters can be adjusted in software for each variant. In addition, SPOC Wire Guard devices provide real-time status, pre-warning indicators, and other diagnostics. SPOC Wire Guard also addresses growing needs for features supporting ADAS and enables fail-operational capabilities for L2++ to L5. It is offered as a Safety Element out of Context (SEooC) for use in systems up to ASIL-D in accordance with ISO 26262, with an integrated non-volatile memory (NVM) to configure an application-specific safe state. It can autonomously react to supply-voltage drops caused by load faults to protect the supply and is available in four variants with a scalable feature set (A, I, P, and F) supporting currents up to 34.5 A. | 29.07.2026 10:30:00 | Jul | news_2026-08-15_10.jpg | \images\news_2026-08-15_10.jpg | https://www.infineon.com/technology-news/2026/inftn202607-124 | infineon.com |
| Current Transducer with PPM-Class Precision | Danisense announced a high-precision DP12IP curren... | 13921 | Product Release | Current Transducer with PPM-Class Precision | Danisense announced a high-precision DP12IP current transducer designed for isolated DC and AC current measurement in demanding PCB-mounted power electronics applications. Based on the company’s closed-loop compensated fluxgate technology, the DP12IP series combines ppm-class accuracy with a maximum linearity error of 10 ppm and high long-term stability in a PCB-mount package featuring a form factor of 32 mm and weighing 250 g. This allows for integration into 1U power supplies and other space-constrained equipment. The transducer supports current measurement up to 18 A and accommodates measurement resistors up to 100 Ω at full scale. It uses fixed excitation frequency and second harmonic zero-flux detection for current measurement. Typical applications include magnet power supplies for particle accelerators, stable precision power supplies, precision servo drives for motion control, battery test benches, battery emulators, and power measurement and power analysis systems. | 28.07.2026 06:30:00 | Jul | news_2026-08-15_6.jpg | \images\news_2026-08-15_6.jpg | https://danisense.com/products/dp12ip/ | danisense.com |
| Software for Three-Phase Power Analysis on MXO Series Oscilloscopes | Rohde & Schwarz has introduced the R&S MXO-K333 so... | 13915 | Product Release | Software for Three-Phase Power Analysis on MXO Series Oscilloscopes | Rohde & Schwarz has introduced the R&S MXO-K333 software option for three-phase power analysis on its MXO series oscilloscopes. The software adds in-depth measurement and analysis functions for testing and debugging three phase power systems, drives and inverters. Available for all four and eight channel models of the MXO 3, MXO 4, MXO 5 and 5C oscilloscopes, it supports the analysis of voltage and current signals in three-phase AC systems. This test solution keeps the captured waveforms visible during measurement, allowing engineers to review power values and check transient behavior in the same instrument. Other oscilloscope functions such as math, spectrum analysis, measurement tracking and zone trigger remain available for further analysis. A guided setup wizard assigns the oscilloscope channels to the voltage and current probes used for the three-phase analysis. It verifies the wiring and supports common two-wire, three-wire and four-wire configurations (2V2A, 3V3A and 3VN3A). After setup, the software provides cycle-by-cycle calculations for RMS values, power factor, active power, reactive power and total power. By defining the input and output configuration, users can also calculate the system’s three-phase efficiency. Additional analysis views include phasor display, harmonic analysis and THD measurements in line with IEC 61000-3-2 and MIL-STD-1399. As an oscilloscope-based solution, the R&S MXO-K333 enables engineers to correlate three-phase power results directly with the underlying voltage and current waveforms in real time. This is especially valuable during R&D and debugging, when power behavior often must be analyzed alongside switching events, transients, control signals and communication activity. | 23.07.2026 15:30:00 | Jul | news_2026-08-01_15.jpg | \images\news_2026-08-01_15.jpg | https://www.rohde-schwarz.com/uk/about-us/news-press/all-news/rohde-schwarz-presents-new-software-for-three-phase-power-analysis-on-mxo-series-oscilloscopes_229356-1642048.html?change_c=GB | rohde-schwarz.com |
| Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption | Navitas Semiconductor and Magnachip Semiconductor,... | 13919 | Industry News | Strategic Partnership to Accelerate HV and UHV Silicon Carbide Adoption | Navitas Semiconductor and Magnachip Semiconductor, a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions, announced a strategic partnership to accelerate adoption of SiC technologies in high-voltage (HV) and ultra-high-voltage (UHV) power markets. Under the terms of the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar™ (TAP) technology to enter the HV and UHV SiC markets. The license covers 1200 V, 2300 V, 3300 V and higher voltage GeneSiC technologies, enabling Magnachip to build on Navitas’ SiC device platforms for next-generation power conversion applications. Magnachip will also gain access to Navitas’ SiC supply chain and materials ecosystem, supporting faster market entry. At the same time, the technology is planned to be ported, qualified, and internalized at Magnachip’s fab in South Korea. The companies expect this approach to help accelerate Magnachip’s entry into SiC while maintaining continuity with Navitas’ established technology and materials base. The licensed technologies are expected to support next-generation applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems. The companies also stated that the agreement encompasses broader engagement beyond SiC. Additional areas of partnership are expected to be detailed and announced later. | 23.07.2026 07:30:00 | Jul | news_2026-08-15_4.jpg | \images\news_2026-08-15_4.jpg | https://www.navitassemi.com/en/press-releases/navitas-and-magnachip-announce-strategic-partnership-to-accelerate-high-voltage-and-ultra-high-voltage-silicon-carbide-adoption | navitassemi.com |
| High-Precision Power Analyzer | Yokogawa introduced the WT1500 power analyzer for ... | 13924 | Product Release | High-Precision Power Analyzer | Yokogawa introduced the WT1500 power analyzer for high-voltage, multi-functional measurement within the renewable energy and xEV markets as well as for semiconductor and battery applications. Operating with an input voltage of 2000 V<sub>DC</sub>, its four measurement channels fit within a 2U (approx. 88 mm), 19-inch chassis, making it suitable for the rack-mount and PC controlled test environments. Resolver signal input support enables engineers to conduct motor evaluation tests without needing additional equipment, while multi-unit synchronization capabilities will later allow up to 5 units to connect, for a maximum of 20 power channels. The WT1500 achieves a total power accuracy of ±0.038 % (DC, 50/60 Hz) and low-power-factor accuracy of ±0.07 % of S at 50/60 Hz and supports two types of input elements, High Voltage (HV) and Wide Bandwidth (WB). The HV element supports direct measurement up to 2000 V<sub>DC</sub> and 300 kHz, well-suited for high-voltage PCS and ESS applications. The WB element supports up to 1000 V with a 2 MHz bandwidth, crucial for measuring the complex, high-frequency waveforms generated in today’s xEV motors. Both inputs share a common sensor input and can be mixed in a single unit. The instrument supports four power measurements and four motor evaluations, including both encoder and resolver signal inputs, IEEE 1588 time synchronization, and data output to CAN/CAN-FD buses and low-latency data transmission via UDP communication. Featuring several interfaces for remote control via PC, external monitor or tablet up to five WT1500 units can be synchronized, enabling 20-channel power measurement. | 22.07.2026 09:30:00 | Jul | news_2026-08-15_9.jpg | \images\news_2026-08-15_9.jpg | https://tmi.yokogawa.com/news/press-releases/2026/yokogawa-test-measurement-releases-wt1500-precision-power-analyzer/ | tmi.yokogawa.com |
| AEC-Q101 compliant 40 V N-channel MOSFETs | Toshiba Electronics Europe has launched the XPJ1R5... | 13907 | Product Release | AEC-Q101 compliant 40 V N-channel MOSFETs | Toshiba Electronics Europe has launched the XPJ1R504PB, an automotive-compliant 40 V, 120 A N-channel power MOSFET housed in the S-TOGL™ package, expanding its lineup for 12 V systems. Target applications include inverters, semiconductor relays, load switches, and motor drives. By adding this 40 V MOSFET to its existing lineup in the S-TOGL package, which includes the XPJR6604PB and XPJ1R004PB, Toshiba has expanded its product options to meet a range of applications and performance requirements. The S-TOGL package employs gull wing leads that help relieve mounting stress, thereby improving the mechanical reliability of the soldered connections. In addition, the package features a post less structure that integrates the chip’s source-electrode connection and outer leads, thereby reducing parasitic resistance and achieving an on resistance (R<sub>DS(ON)</sub>) of 1.54 mΩ (max.) at a gate-source voltage (V<sub>GS</sub>) of 10 V. The use of a thick copper frame in the S-TOGL package lowers the transient thermal impedance between the channel and the case (Z<sub>th(ch-c)</sub>) to 0.76 K/W, reducing conduction loss and suppressing heat generation, thereby improving overall system efficiency. Furthermore, a multi-pin structure for the source leads enhances current distribution, enabling high current capability. | 21.07.2026 07:30:00 | Jul | news_2026-08-01_7.jpg | \images\news_2026-08-01_7.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/07/automotive-20260721-1.html | toshiba.semicon-storage.com |
| Strategic Acquisition increases Medium Voltage Expertise | Tamura Corporation has entered into a share transf... | 13917 | Industry News | Strategic Acquisition increases Medium Voltage Expertise | Tamura Corporation has entered into a share transfer agreement, through its subsidiary Tamura-Europe Limited, to acquire EMG Power Electric S.r.l. This strategic acquisition marks another important step in Tamura’s "One TAMURA for Next 100" Medium-Term Management Plan, strengthening the Group’s capabilities in medium-voltage power technologies and supporting growth in key markets including renewable energy, industrial electrification, AI-driven data centers and critical power infrastructure. Following the completion of the transaction, EMG will serve as the Tamura Group’s Global Center of Excellence for medium-voltage dry-type transformer technologies, supporting engineering development, manufacturing excellence and technology transfer across the Group’s worldwide operations. By combining EMG’s expertise with Tamura’s global engineering and manufacturing network across Japan, Europe, the United States, Mexico, China and Malaysia, the Group aims to strengthen its ability to deliver advanced power conversion solutions to customers worldwide. | 21.07.2026 06:50:00 | Jul | news_2026-08-15_2.png | \images\news_2026-08-15_2.png | https://www.tamuracorp.com/global/ | tamuracorp.com |
| Family of 1200-2300 V SiC Power Modules | WeEn Semiconductors has launched a family of AC/DC... | 13908 | Product Release | Family of 1200-2300 V SiC Power Modules | WeEn Semiconductors has launched a family of AC/DC and DC/DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications. The semiconductors are available in an array of packages and with voltages ranging from 1200 to 2300 V, R<sub>DS(on)</sub> values as low as 1.5 mΩ and customer-specific configurations can also be created. Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kV<sub>AC</sub> to 800 V<sub>DC</sub> in a single stage. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T). Similarly, half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing. | 20.07.2026 08:30:00 | Jul | news_2026-08-01_8.jpg | \images\news_2026-08-01_8.jpg | https://www.ween-semi.com/about/news/technical-article/61 | ween-semi.com |
| 35 W to 350 W AC/DC Power Supplies | XP Power announces the LBA series of low-profile e... | 13929 | Product Release | 35 W to 350 W AC/DC Power Supplies | XP Power announces the LBA series of low-profile enclosed, chassis-mount, single-output AC/DC power supplies, covering power levels from 35 W to 350 W within the operating temperature range of -30 °C to +70 °C. Designed for cost-sensitive industrial technology applications, the series provides a platform for engineers developing industrial automation, security and surveillance systems, lighting control, smart home and building control equipment. The LBA series offers regulated single output voltages from 5 V to 48 V<sub>DC</sub> (model dependent) with output adjustment capability to compensate for system tolerances or voltage drops. This output voltage trim allows engineers to ensure accurate voltage delivery at the point of load and improve overall system performance and reliability. A universal 90 to 264 V<sub>AC</sub> input range and active PFC are standard in this series, which provides an efficiency of up to 90%. In lower power ratings, the LBA series offers a footprint of 99 mm × 82 mm × 30 mm (35 W and 50 W models) and 99 × 97 × 30 mm³ (75 W). Models up to 200 W feature convection-cooled, fanless operation, designed for noise-sensitive environments. The 350 W variant incorporates fan cooling. A wide ensures reliable performance in harsh environments. | 16.07.2026 14:30:00 | Jul | news_2026-08-15_14.jpg | \images\news_2026-08-15_14.jpg | https://www.xppower.com/resources/press-releases/35-350w-ac-dc-power-supplies-industrial%20applications | xppower.com |
| Shielded Power Inductors for High-Current, Automotive and DC/DC Designs | Bourns introduced the SRP2010PA, SRP2510PA, and SR... | 13913 | Product Release | Shielded Power Inductors for High-Current, Automotive and DC/DC Designs | Bourns introduced the SRP2010PA, SRP2510PA, and SRP2512PA Series of shielded power inductors designed to support high current operation in space-constrained electronic designs. This series combines a metal-alloy powder core with shielded construction to reduce magnetic field radiation while maintaining a low-profile package. The devices are AEC-Q200 compliant and suitable for automotive-grade applications. Typical applications are automotive systems, DC/DC converters and miniature electronic devices. | 16.07.2026 13:30:00 | Jul | news_2026-08-01_13.jpg | \images\news_2026-08-01_13.jpg | https://www.bourns.com/news/press-releases/pr/2026/07/16/bourns-releases-new-shielded-power-inductors-for-high-current--low-profile-automotive-and-dc-dc-designs | bourns.com |
| Joining the Current/OS Partner Network to Advance the Future of Direct Current Microgrids | Power Innovations International (Pii) has joined t... | 13903 | Industry News | Joining the Current/OS Partner Network to Advance the Future of Direct Current Microgrids | Power Innovations International (Pii) has joined the Current/OS Foundation to advance the adoption of Direct Current microgrids and support industry efforts to establish standards for the next generation of energy systems. As electrification accelerates across transportation, data centers, industrial facilities, airports, and distributed energy applications, direct current (DC) is becoming an increasingly important foundation for modern power systems. Current/OS is committed to addressing the challenge of defining and implementing standards for designing, deploying, and operating DC systems at scale by bringing together technology leaders dedicated to creating the frameworks and best practices needed to accelerate DC adoption. Pii provides power electronics ranging from individual converter modules to complete DC power systems, including its Tower of Power (ToP) platform. The Pii Tower of Power enables organizations to build DC-coupled microgrids that integrate energy storage, renewable generation, EV charging, and critical loads while reducing unnecessary power conversion stages. Through this partnership, Pii and Current/OS will work alongside other industry participants to advance the adoption of DC technologies, improve interoperability between systems, and accelerate the development of energy infrastructure and standards that can better support these electrification demands. | 16.07.2026 08:00:00 | Jul | news_2026-08-01_3.png | \images\news_2026-08-01_3.png | https://powerinnovations.com/power-innovations-international-joins-current-os-partner-network-to-advance-the-future-of-direct-current-microgrids/ | powerinnovations.com |
| Radiation-Hardened GaN HEMT Driver for Satellite and High-Rel Space Applications | Infineon Technologies introduces the RIC70115, a r... | 13909 | Product Release | Radiation-Hardened GaN HEMT Driver for Satellite and High-Rel Space Applications | Infineon Technologies introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations. The RIC70115 integrates an independent Miller Clamp function that prevents parasitic-induced turn-on while maintaining the desired switching speed, reducing switching losses and improving overall efficiency. A Truly Differential Input (TDI) logic stage delivers high noise immunity by rejecting common-mode noise and mitigating the effects of electromagnetic interference and radio frequency interference, both particularly relevant in the electrically demanding environment of a satellite power bus. An integrated low dropout regulator (LDO) generates a tightly regulated 4.8 V drive voltage from a 5 V or 12 V source, reducing the need for external regulation components and supporting a power input range of 4.75 V to 15 V. The RIC70115 meets the requirements of MIL-PRF-38535 across an extended operating temperature range of -55 °C to +125 °C. It is radiation hardened to a Total Ionizing Dose (TID) rating of up to 100 krad (Si) and has been characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg, providing the radiation performance margins required for low-earth orbit and beyond. | 15.07.2026 09:30:00 | Jul | news_2026-08-01_9.jpg | \images\news_2026-08-01_9.jpg | https://www.infineon.com/technology-news/2026/inftn202607-122 | infineon.com |
| Berlin Startup Secures €2M for Gallium Oxide Epitaxy | NextGO Epi, a Berlin/Germany-based deep tech start... | 13901 | Industry News | Berlin Startup Secures €2M for Gallium Oxide Epitaxy | NextGO Epi, a Berlin/Germany-based deep tech startup and spin-off of the Leibniz Institute for Crystal Growth (IKZ), has closed a pre-seed funding round totaling 2 million euros. This was also enabled by the European Commission’s Chips Act 2.0. The company produces gallium oxide epitaxial wafers for next-generation power electronics. Its process creates a semiconductor material that aims to cut the manufacturing costs of power semiconductors by up to 75 percent. NextGO Epi claims to be Europe’s only company producing industrial-grade gallium oxide epitaxial wafers with diameters of up to 4 inches. The material forms the electrically active layer of the next generation of power semiconductors: gallium oxide-based components can withstand higher voltages and operate more efficiently than the silicon carbide or gallium nitride commonly used today. The fresh capital will be used to accelerate product development, expand the team, and strengthen the company’s commercial presence in Europe and on global markets. The founding team brings together more than ten years of experience in gallium oxide research and epitaxy, backed by two international patents and over 30 scientific publications. Gallium oxide is ten times more energy-efficient, can handle up to six times higher voltage density, and can be manufactured at up to 75 percent lower cost than GaN or SiC. | 15.07.2026 06:00:00 | Jul | news_2026-08-01_1.jpg | \images\news_2026-08-01_1.jpg | https://www.nextgoepi.com/news/nextgo-epi-received-a-%E2%82%AC2m-pre-seed-round | nextgoepi.com |
| Acquisition for expanding Analog and Mixed-Signal Portfolio | Diodes Incorporated (Diodes) has entered into a d... | 13916 | Industry News | Acquisition for expanding Analog and Mixed-Signal Portfolio | Diodes Incorporated (Diodes) has entered into a definitive agreement to acquire ElevATE Semiconductor, Inc. (ElevATE) in an all-cash transaction for $250 million. ElevATE is a fabless semiconductor company based in San Diego, California that specializes in the development of integrated circuits for the Automated Test Equipment (ATE) industry. Diodes anticipates to add approximately $50 million of revenue in the first twelve months post-close, with revenue expected to grow at a CAGR of greater than 20% over the next four years with gross margin significantly higher than Diodes’ corporate average. The Boards of both companies and the stockholders of ElevATE have approved the transaction, which is still subject to customary closing conditions, including regulatory approvals. The transaction is expected to close during the second half of 2026. | 14.07.2026 06:00:00 | Jul | news_2026-08-15_1.png | \images\news_2026-08-15_1.png | https://www.diodes.com/about/news/press-releases/diodes-incorporated-to-acquire-elevate-semiconductor | diodes.com |
| Current Probe for Measurements up to 1000 A | Teledyne LeCroy expands its portfolio of current m... | 13930 | Product Release | Current Probe for Measurements up to 1000 A | Teledyne LeCroy expands its portfolio of current measurement solutions with the CP1000 AC/DC current probe, which has been specifically designed for precise measurement of high currents in applications such as traction inverters, motor drives, fast charging stations, energy storage systems, and industrial power electronics. With measurement capability up to 1000 A<sub>rms</sub> and 1400 A peak current, the CP1000 combines 1000 A continuous current capability with 1.5 MHz bandwidth. This capability is particularly important for SiC- and GaN-based power circuits as well as for efficiency and power-loss measurements. It fills the gap between traditional high-current transformers and high-bandwidth laboratory current probes. The probe features a 33 mm core opening in combination with a 6-meter cable, enabling measurements on large conductors and busbars without interrupting the circuit. Through Teledyne LeCroy’s ProBus® interface the probe is automatically recognized and scaled. Functions such as Auto-Zero and Degauss can be controlled directly from the oscilloscope. | 13.07.2026 15:30:00 | Jul | news_2026-08-15_15.jpg | \images\news_2026-08-15_15.jpg | https://www.teledynelecroy.com/probes/current-probes/cp1000 | teledynelecroy.com |
| Collaboration on DC Power Solutions for AI Data Centers | Infineon Technologies and LS ELECTRIC have signed ... | 13902 | Industry News | Collaboration on DC Power Solutions for AI Data Centers | Infineon Technologies and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids. The collaboration will focus on key DC infrastructure areas, including power conversion systems for energy storage systems, solid-state transformers (SSTs) and solid-state circuit breakers (SSCBs). SSTs are advanced, semiconductor-based power conversion devices that can be up to 30 percent smaller and lighter while offering higher efficiency compared to conventional copper and iron-based transformers. SSCBs use semiconductors and smart algorithms to protect electrical circuits from damage caused by short circuits or overloads. They interrupt the flow of current and operate on the microsecond scale to improve system stability and protection. These semiconductor-based solutions are becoming increasingly important in high-density power environments such as AI data centers. The collaboration aims to improve power and voltage conversion efficiency while enhancing the stability and reliability of next-generation DC power systems. Under the provisions of the MoU, Infineon will support the development of high-efficiency, high-performance DC power infrastructure systems with its semiconductor portfolio that includes power semiconductors, microcontrollers and power control solutions. LS ELECTRIC will leverage its expertise in power systems and industrial automation to drive system-level integration and implementation. Together, the two companies will align technology roadmaps and advance co-development efforts to capture growth opportunities in the next-generation energy infrastructure market. | 13.07.2026 07:00:00 | Jul | news_2026-08-01_2.jpg | \images\news_2026-08-01_2.jpg | https://www.infineon.com/press-release/2026/infpr202607-121 | infineon.com |
| Intelligent Fuse Technology for Battery Systems | The STTP 9550 from Schurter combines overcurrent p... | 13912 | Product Release | Intelligent Fuse Technology for Battery Systems | The STTP 9550 from Schurter combines overcurrent protection with active overcharge protection in a compact 3-terminal fuse. Using its integrated trigger function, the charge and discharge paths can be disconnected even if the protection IC or FET fails. This makes the STTP 9550 suitable for lithium-ion batteries used in energy storage, industrial and mobility applications. These three-terminal fuses STTP 9550 combine conventional overcurrent protection with an actively triggered overcharge protection function, providing an additional layer of safety for lithium-ion battery systems. In addition to current-dependent interruption, the integrated trigger terminal enables controlled activation in critical operating conditions. This allows reliable disconnection of charge and discharge paths even in the event of protection IC or FET failure. Gold-plated terminals ensure low and stable contact resistance, high signal integrity and corrosion resistance. The package supports high-power-density battery pack designs ranging from 1 to 24 cells. Typical applications include energy storage systems, power tools, UPS equipment, e-bikes, e-scooters, and automated guided vehicles (AGVs). Supported by UL approvals and designed for redundant protection architectures required by the battery safety standards, three-terminal fuses provide a robust and intelligent protection solution for advanced energy systems. | 11.07.2026 12:30:00 | Jul | news_2026-08-01_12.jpg | \images\news_2026-08-01_12.jpg | https://www.schurter.com/en/news/sttp-intelligent-fuse-solutions-for-battery-systems | schurter.com |
| TVS Diodes for 48 V Automotive Systems | Littlefuse announced the TP5.0SMD-FL (5 kW) and TP... | 13911 | Product Release | TVS Diodes for 48 V Automotive Systems | Littlefuse announced the TP5.0SMD-FL (5 kW) and TP1KSMB-FL (1 kW) Series FlatSuppressX™ TVS Diodes, designed to protect 48 V automotive electronics from transient overvoltage events while delivering low and stable clamping performance. Engineered for next-generation 48 V systems in compliance with ISO 21780, the TVS diodes address a critical challenge in automotive design: protecting increasingly sensitive ICs - such as DC/DC converters and gate drivers - without exceeding their absolute maximum ratings. Using Littelfuse’s proprietary FlatSuppressX technology, the devices maintain a near-constant, low clamping voltage during fast transients and high-energy surge events. The TP5.0SMD-FL Series provides up to 5000 W peak pulse power capability in a DO-214AB (SMC) package. At the same time, the TP1KSMB-FL Series delivers 1000 W in a DO-214AA (SMB) package. Both series are AEC-Q101 qualified. | 09.07.2026 11:30:00 | Jul | news_2026-08-01_11.jpg | \images\news_2026-08-01_11.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-flatsuppressx-tp5-0smd-fl-and-tp1ksmb-fl-tvs-diodes-for-48-v-automotive-systems | littelfuse.com |
| PCIM Visitors enable Charity Donation | Vincotech raised € 12,500 for Plan International G... | 13905 | Industry News | PCIM Visitors enable Charity Donation | Vincotech raised € 12,500 for Plan International Germany’s climate resilience project in Zambia through an interactive charity activity at this year’s PCIM Europe trade fair. Every visitor, who took part in a reaction game, contributed to the donation. Vincotech has made community fundraising a tradition at PCIM Europe, using interactive attractions to engage visitors while supporting charitable causes. Over the years, attractions including wall climbing, Sudoku challenges, virtual reality experiences, and, most recently, a fast-paced reaction game have delighted attendees. This year’s crowd favorite drew around 500 participants, all playing for a good cause. This year’s charity initiative will benefit a Plan International Germany’s project in Zambia that supports communities in responding to the effects of climate change. The project focuses on practical measures such as sustainable agriculture, green business development, hydroponics, and environmental protection. It also helps young people and farming families improve food security, gain new skills and create more stable sources of income. | 09.07.2026 10:00:00 | Jul | news_2026-08-01_5.jpg | \images\news_2026-08-01_5.jpg | https://www.vincotech.com/company/news-events/vincotech-raises-euro12-500-at-pcim-europe-for-plan-international-germany/ | vincotech.com |
| 600 V Super Junction MOSFETs in SMD Package | ROHM has developed a lineup of 600 V Super Junctio... | 13906 | Product Release | 600 V Super Junction MOSFETs in SMD Package | ROHM has developed a lineup of 600 V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series. The products – R60xxXNx series and PrestoMOS™ R60xxWNx series – add surface-mount DFN8080-5L (8.0 × 8.0 × 0.85 mm³) and TOLL (11.68 × 9.9 × 2.3 mm³) packages to the existing package lineup. These packages are suited for applications that require space savings and higher power density, including power supplies for AI servers and industrial equipment. In terms of characteristics, the gate threshold voltage (V<sub>GS(th)</sub>) required to turn on the MOSFET is set to a 3 V to 5 V range widely used in standard products. In addition, improved admittance characteristics deliver greater versatility and lower loss, compared with conventional R60xxYNx series and PrestoMOS R60xxVNx series. Surface-mount packages having market common footprint ensure excellent versatility while making it easier to consider replacement in existing power supply circuits and select second sources. The lineup consists of 21 models in the high-speed switching R60xxXNx series and 11 models in the PrestoMOS R60xxWNx series. Typical application examples are power supplies for AI servers, data centers and industrial and consumer equipment (LLC, PFC, Flyback, etc.) as well as motors and inverters for fans, AC servos, and other applications. | 09.07.2026 06:30:00 | Jul | news_2026-08-01_6.jpg | \images\news_2026-08-01_6.jpg | https://www.rohm.com/news-detail?news-title=2026-07-09_news_super-junction-mosfet&defaultGroupId=false | rohm.com |
| Vertically Stacked Packaging Technology in a Half-Bridge Configuration | Alpha and Omega Semiconductor introduced its AOPL6... | 13900 | Product Release | Vertically Stacked Packaging Technology in a Half-Bridge Configuration | Alpha and Omega Semiconductor introduced its AOPL66801 80V MOSFET in a half-bridge configuration available in a state-of-the-art DFN6x5 AmpStack™ MOSFET package. This breakthrough packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools. Designed to support high power-density requirements, AOS’ packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge. This configuration effectively increases power density and maximizes available PCB space compared to a two DFN5x6 discrete MOSFET solution. The AOPL66801 also features an optimized clip design for the switch node connecting the two MOSFETs, which minimizes parasitic inductance between the high-side and low-side MOSFETs. Compared to a standard discrete solution, the AOPL66801 minimizes parasitic inductance on the PCB, reducing phase-node voltage ringing and decreasing stress on the MOSFET. The PCB layout can affect gate-driving performance and degrade switching performance due to parasitic inductance. The AOPL66801 has a Kelvin sense pin that maintains gate-voltage stability during large di/dt switching and provides a more effective drive path for the high side, reducing losses. In addition, AOPL66801 has a maximum junction temperature of 175 °C, providing increased capability. These factors provide significant system-level improvements that support higher power density and increased operational efficiencies. | 07.07.2026 12:30:00 | Jul | news_2026-07-15_17.jpg | \images\news_2026-07-15_17.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-ampstack-packaging-leap-forward-mosfet-power-density | aosmd.com |
| Standard-Level 40 V MOSFETs for Motor Control Circuits | Vishay introduced four V TrenchFET® Gen IV sta... | 13897 | Product Release | Standard-Level 40 V MOSFETs for Motor Control Circuits | Vishay introduced four V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Q<sub<gd</sub> / Q<sub<gs</sub> ratios of less than 1. The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Q<sub>gd</sub> / Q<sub>gs</sub> ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems. The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mW to 2.5 mW at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % R<sub>G</sub>- and UIS-tested, RoHS-compliant, and halogen-free. | 07.07.2026 09:30:00 | Jul | news_2026-07-15_14.jpg | \images\news_2026-07-15_14.jpg | https://www.vishay.com/en/company/press/releases/2026/SiR5404DP-et-al/ | vishay.com |
| Hjalti Pall Thorvardarson Appointed Chief Operating Officer | Danisense has appointed Hjalti Pall Thorvardarson ... | 13892 | People | Hjalti Pall Thorvardarson Appointed Chief Operating Officer | Danisense has appointed Hjalti Pall Thorvardarson as its new Chief Operating Officer (COO), further strengthening the company’s leadership team as it continues to expand its global operations and product portfolio. Thorvardarson brings extensive experience in electronics engineering, operational management and business leadership. A Computer and Electronics Engineer by training, he has built his career within a Danish high-tech SME specializing in functional testing and simulation solutions for the space and defense industry. Progressing from student employee to Hardware Engineer, Project Manager, Department Head and ultimately CEO for the past eight years, he has proven hands-on expertise across engineering, product development, manufacturing and management. | 06.07.2026 13:00:00 | Jul | news_2026-07-15_8.jpg | \images\news_2026-07-15_8.jpg | https://danisense.com/ | danisense.com |
| Second Managing Director appointed | The German custom magnetics company Schmidbauer Tr... | 13904 | People | Second Managing Director appointed | The German custom magnetics company Schmidbauer Transformatoren und Gerätebau has appointed Florian Ehgartner as an additional managing director. He will lead the company alongside the managing director, Dominik Reichl. As a managing director with sole power of representation, Florian Ehgartner will assume responsibility in particular for operational areas, including materials management and IT. Dominik Reichl will in future focus more closely on product development, sales and the company’s strategic direction. Florian Ehgartner previously served as Head of Business Unit at the globally active Sumida Group. His career within the group began as a hands-on development engineer at VOGT and saw him steadily progress to positions of leadership and responsibility. Most recently, he was responsible for key operational and strategic units in German-speaking countries. At the same time, he remains an authorised signatory at SUMIDA Components & Modules GmbH. In his new role at Schmidbauer, he will focus in particular on driving forward the further integration and consolidation of the companies’ activities. Schmidbauer is part of the Sumida group of companies. Schmidbauer aims to increasingly establish itself as a global partner for customised inductive components in the high-power sector – particularly for higher volumes and demanding industrial applications. | 06.07.2026 09:00:00 | Jul | news_2026-08-01_4.jpg | \images\news_2026-08-01_4.jpg | https://www.schmidbauer.net/en/ | schmidbauer.net |
| Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers | Sumida and Infineon Technologies are jointly advan... | 13893 | Industry News | Joint Efforts on Advancing Medium-Frequency Transformers for Solid-State Transformers | Sumida and Infineon Technologies are jointly advancing next-generation medium-frequency transformer (MFT) solutions as a key enabler for Solid-State Transformer (SST) architectures. This collaboration combines Infineon’s leadership in power semiconductor technologies with Sumida’s expertise in high-performance magnetics, addressing the rapidly evolving requirements of electrification, grid modernization, and ultra-fast charging infrastructure. SST systems represent a paradigm shift in power conversion by enabling higher efficiency, reduced system size, and enhanced controllability. At the core of these systems, medium-frequency transformers operate at significantly higher switching frequencies compared to conventional transformers, enabling significant size and weight reduction, improved power density and efficiency, enhanced bidirectional power flow capabilities, and integration into modular, scalable power architectures. Sumida’s magnetics design capabilities, particularly in core materials, winding technologies, thermal optimization and fulfilling the challenging isolation requirements of MVAC Input are closely aligned with Infineon’s latest wide-bandgap semiconductor technologies, ensuring optimal system performance, by using up to 3.3 kV CoolSiC™ devices. A key milestone of this collaboration was showcased at PCIM Europe 2026 in Nuremberg, one of the leading international exhibitions for power electronics. The positive industry feedback at PCIM underscores the growing relevance of integrated SST solutions and validates the collaboration’s technological direction. The joint effort between Infineon and Sumida exemplifies a cooperative, forward-looking approach to innovation in power electronics. By combining complementary strengths, both companies are accelerating the development of highly efficient, compact, and scalable SST solutions - paving the way for the next generation of electrified infrastructure. | 05.07.2026 14:00:00 | Jul | news_2026-07-15_9.jpg | \images\news_2026-07-15_9.jpg | https://www.sumida.com/ | sumida.com |
| Safety Power Management IC for Electromechanical Braking | Allegro MicroSystems introduced the A81415, an ASI... | 13895 | Product Release | Safety Power Management IC for Electromechanical Braking | Allegro MicroSystems introduced the A81415, an ASIL-D-certified Power Management IC (PMIC) to integrate a wheel-speed sensor interface. The device provides electromechanical braking (EMB) designers with a simplified, single-chip power and sensing foundation for next-generation brake-by-wire systems. With an on-chip wheel-speed sensor interface (WSSI), the A81415 safety PMIC decodes standard 2-level, 2-level Pulse Width Modulation (PWM), and 3-level AK protocols (standard and high-resolution) without complicated analog circuitry or a separate decoder IC. By incorporating a fully integrated buck-boost pre-regulator, five Low-Dropout (LDO) regulators, and a single-inductor architecture that requires no external switches or diodes, the A81415 eliminates up to nine external components and unlocks up to $4 in semiconductor bill-of-materials (BOM) savings per vehicle, delivering meaningful cost advantages at OEM production scale. This level of integration opens up more than 50% of usable board space to provide the brake caliper with critical design headroom. Because the physical layer of the wheel-speed data is handled internally by the PMIC and the decoded data is shared over a Serial Peripheral Interface (SPI), the A81415 trims latency in the safety-critical loop and frees MCU bandwidth for faster braking response. Low-noise power rails are explicitly tuned to power Allegro’s XtremeSense™ TMR angle sensors and ensure the entire commutation and clamping-force signal chain is optimized as one coherent, high-resolution system from wheel to caliper. | 02.07.2026 07:30:00 | Jul | news_2026-07-15_12.jpg | \images\news_2026-07-15_12.jpg | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2026/safety-pmic-with-integrated-wheel-speed-sensor-interface-a81415 | allegromicro.com |
| Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened | Infineon Technologies opened the Smart Power Fab i... | 13885 | Industry News | Fab for Power Semiconductors and Analog/Mixed-Signal Technologies Opened | Infineon Technologies opened the Smart Power Fab in Dresden several months ahead of schedule. The new plant, with an investment volume of five billion euros, is the largest single investment in Infineon’s history and one of the largest investment projects in Germany, creating 1,000 new, direct jobs. The fab doubles Infineon’s manufacturing capacities at the Dresden site, thus creating the world’s largest factory for intelligent power semiconductors and analog / mixed-signal technologies. "We’re opening our new plant at just the right time," says Jochen Hanebeck, CEO of Infineon. "Our Smart Power Fab is creating urgently needed capacities for the key technologies of the future, for everything from energy supply for AI data centers to software-defined vehicles and renewable energies. Infineon is thus giving an important impulse in making the global AI revolution possible and securing supply chains in critical industries. By taking this step, we are strengthening our global vanguard position as a leading manufacturer of power semiconductors and analog / mixed-signal technologies." The building itself and the machine layout were pre-planned and optimized using a digital twin. System and process clearance is supported by AI algorithms. Furthermore, the connection to the Infineon plant in Villach as "One Virtual Fab" makes qualification of processes and products significantly faster than in the past. With the expansion, Infineon Dresden is further strengthening its position as a worldwide leading site for power semiconductors and analog / mixed-signal technologies; at the same time, it is also bolstering the European leadership role in the overall semiconductor cluster "Silicon Saxony" in and around Dresden. | 02.07.2026 06:00:00 | Jul | news_2026-07-15_1.jpg | \images\news_2026-07-15_1.jpg | https://www.infineon.com/press-release/2026/ifxpr202607-117 | infineon.com |
| Vincenzo Salmeri appointed President | Vincenzo Salmeri, an international senior executiv... | 13886 | People | Vincenzo Salmeri appointed President | Vincenzo Salmeri, an international senior executive with nearly 30 years of experience within Schneider Electric, has been appointed as the new President of Current/OS, the independent global nonprofit foundation bringing together manufacturers, technology leaders and electrical experts to enable the safe and large-scale deployment of Direct Current (DC) in electrical distribution systems. His appointment marks Current/OS’ transition into a new phase of international development to accelerate the safe, scalable and interoperable adoption of Direct Current. Mr. Salmeri’s appointment comes at a pivotal moment for the energy transition. As electrification accelerates, driven by renewable energy, storage, electric mobility, digital infrastructure and the rapid growth of data centers, DC is emerging as a key enabler of more efficient, flexible and resilient electrical architectures. Current/OS aims to provide the shared rules, reference architectures and interoperability framework needed to make DC systems safe, repeatable and scalable across the market. | 29.06.2026 07:00:00 | Jun | news_2026-07-15_2.jpg | \images\news_2026-07-15_2.jpg | https://currentos.org/ | currentos.org |
| Patent for DC Power Junction System Technology | Custom Electronics announced it has received a pat... | 13890 | Industry News | Patent for DC Power Junction System Technology | Custom Electronics announced it has received a patent for its proprietary junction system technology designed for safely connecting DC power sources in parallel while preventing batteries from discharging into one another. Designed as an agnostic junction platform, the technology can be utilized with batteries, solar power systems and other DC energy sources, which creates new opportunities for scalable power distribution and energy storage applications. The patented junction unit is engineered to connect multiple DC sources and energy storage devices to a common power bus while utilizing advanced control and protection circuitry to safely manage current flow throughout the system. The technology allows for hot-swapping of connected power sources in parallel, enabling continuous operation without interruption while improving overall system performance, safety and reliability. It creates opportunities for future energy solutions, such as battery banking systems, renewable energy integration and residential or commercial power appliances that can manage multiple energy sources through a single platform. By enabling batteries, solar arrays and other DC power sources to operate together safely and efficiently, the technology establishes a flexible foundation for next-generation energy storage and power management products. | 24.06.2026 11:00:00 | Jun | news_2026-07-15_6.jpg | \images\news_2026-07-15_6.jpg | https://www.customelec.com/ | customelec.com |
| Center for Microsystems Technology | A 127.4 million Euro funding provided to X-FAB MEM... | 13888 | Industry News | Center for Microsystems Technology | A 127.4 million Euro funding provided to X-FAB MEMS Foundry by the German federal government and the Free State of Thuringia will support the expansion of manufacturing capacity through the construction of a cleanroom at the Erfurt site. The "Fab4Micro" project is among the most significant industrial investments made in Thuringia in recent years. In December 2025, the European Commission gave the green light for the funding. The project is an important component of the European Chips Act (ECA), through which Europe aims to strengthen its technological independence in semiconductors. The new facility is scheduled to begin initial production by the end of 2028. This will enable X-FAB to expand its production capacity for micro-electro-mechanical systems (MEMS), highly integrated microsystems, and photonics. MEMS are systems that comprise electronic, sensing and mechanical elements at the micro- and nanometer scale, used for example in smartphones, vehicles, medical devices, and other applications. The investment will also establish new manufacturing capabilities for high-performance microsystems that use heterogeneous integration technology to combine numerous electronic and optical functions in a single component, required for data centers or optical systems. The Fab4Micro project will also create new highly skilled jobs in the field of microsystems. | 23.06.2026 09:00:00 | Jun | news_2026-07-15_4.png | \images\news_2026-07-15_4.png | https://www.xfab.com/news/details/article/grant-notification-presented-x-fab-develops-erfurt-site-into-a-center-for-microsystems-technology | xfab.com |
| Award recognises strong Collaboration, Customer Support and Continued Growth | TTI IP&E – Europe has received the Honeywell IA Eu... | 13887 | Industry News | Award recognises strong Collaboration, Customer Support and Continued Growth | TTI IP&E – Europe has received the Honeywell IA Europe IS Partner of the Year Award at the Honeywell IA Europe Elevate 2026 partner event, held in Prague. The award recognises TTI IP&E – Europe’s contribution to Honeywell’s business growth in Europe. It also highlights the value of close day-to-day alignment between the two company teams in supporting customers, developing new opportunities and maintaining the inventory needed for responsive supply. Honeywell technologies available through TTI Europe include a broad range of solutions for demanding applications across industrial, transportation, medical, aerospace and defence markets. The portfolio covers products such as pressure, force, flow, position, speed, humidity, temperature and airflow sensors, as well as robust switch technologies for industrial and mobility applications. "We are truly honoured that TTI IP&E – Europe has received the Honeywell Partner of the Year Award," said Ronald Velda, Supplier Marketing Director – Connectors, Emech and Sensors at TTI IP&E – Europe. "This recognition reflects the outstanding trust, partnership, and cooperation between our teams, which has fuelled remarkable business growth and customer satisfaction. We sincerely appreciate the ongoing support and commitment from the Honeywell team in Europe to our joint business. TTI remains fully committed to further investing in inventory and continuing to develop a robust project pipeline to support our joint growth ambitions. We deeply value this prestigious award and look forward to strengthening our partnership with Honeywell in the years to come." | 23.06.2026 08:00:00 | Jun | news_2026-07-15_3.jpg | \images\news_2026-07-15_3.jpg | https://www.ttieurope.com/content/ttieurope/en/manufacturers/honeywell.html | ttieurope.com |
| 500 W Microinverter Reference Platform | Eggtronic, a semiconductor company providing IC co... | 13884 | Product Release | 500 W Microinverter Reference Platform | Eggtronic, a semiconductor company providing IC controllers for power electronics, and Renesas Electronics released a jointly developed 500 W solar microinverter reference platform. The design combines Eggtronic’s EPIC™ mixed-signal controller technology with Renesas’ bidirectional Gallium Nitride switch to demonstrate an architecture to support microinverter OEMs and system manufacturers in developing next-generation solar microinverters and power conversion applications. The reference platform achieves 96.1 % average efficiency under CEC standards and 95.9 % under EU standards, validating the performance potential of a single-stage DC/AC topology. As photovoltaic (PV) module output continues to increase beyond 400 W, microinverter manufacturers must continuously optimize efficiency, thermal performance, component integration, and overall system cost. At the core of the platform is Eggtronic’s proprietary EPIC mixed-signal controller EPIC2ACO01. The controller executes patented Variable Frequency Modulation (VFM) and current-mode strategies designed to maintain Zero-Voltage Switching (ZVS) across the full load range. This single stage approach minimizes BOM cost, switching losses, reduces reactive power circulation, and maintains low Total Harmonic Distortion (THD), while enabling operation at switching frequencies up to 1 MHz - significantly reducing the size of magnetic components. The platform leverages Renesas’ TP65B110HRU bidirectional GaN switch, integrated in a common-drain configuration suitable for cycloconverter-based AC switching. | 22.06.2026 13:30:00 | Jun | news_2026-07-01_17.jpg | \images\news_2026-07-01_17.jpg | https://www.eggtronic.com/eggtronic-introduces-high-efficiency-500w-microinverter-reference-platform-with-renesas/ | eggtronic.com |
| Certified R&D and Business Center in Drammen, Norway | Delta announced the official opening of its comple... | 13889 | Industry News | Certified R&D and Business Center in Drammen, Norway | Delta announced the official opening of its completely revitalized Research and Development (R&D) and business office facility in Drammen, Norway. Having achieved the prestigious BREEAM-NOR Excellent certification, the comprehensive deep-renovation project transforms a historic 50-year-old power electronics facility into a cutting-edge, 7,460-square-meter sustainable innovation hub. Designed to accommodate up to 210 employees, the facility serves as a vital development hub for Delta’s information and communications technology (ICT) power solutions, specifically advancing next-generation data center and telecom infrastructure. It integrates Delta’s own energy-efficient technologies to conquer the unique demands of high-capacity power testing, achieving an anticipated greenhouse gas emission reduction of over 50% compared to reference buildings. In tandem with this landmark inauguration, Delta announced a strategic change to its local legal entity name, transitioning from Delta Electronics Norway AS to Eltek Norway AS to significantly strengthen market opportunities. This renaming perfectly combines Eltek’s renowned local expertise with Delta’s vast global resources. By aligning these strengths, the company aims to deliver industry-leading technology to its customers, accelerate time-to-market, and reinforce a powerful "local for global" strategy from the Drammen hub. | 18.06.2026 10:00:00 | Jun | news_2026-07-15_5.jpg | \images\news_2026-07-15_5.jpg | https://www.delta-emea.com/en-gb/news/delta-inaugurates-business-center-in-drammen | delta-emea.com |
| Probes for High-Current Waveform Measurement | HIOKI Europe introduces the CT6704 and CT6705 curr... | 13875 | Product Release | Probes for High-Current Waveform Measurement | HIOKI Europe introduces the CT6704 and CT6705 current probes for oscilloscopes built for current-waveform observation in power electronics development and power supply evaluation. The CT6704 measures up to 200 A over a frequency range of DC to 30 MHz; the CT6705 measures up to 500 A over DC to 15 MHz. Both connect to any oscilloscope via a standard BNC connection at 0.01 V/A. These probes address two key challenges in modern power electronics: maintaining a stable zero baseline with negligible temperature drift and measuring high currents across a substantially wider frequency range than the previous probe generation. HIOKI realizes this performance by applying the fluxgate sensing principle from its precision current sensors to high-bandwidth probes. Both probes output their signal at 0.01 V/A via a standard BNC connector and can be used directly with oscilloscopes, Memory Recorders, and DAQ systems. The offset temperature coefficient is specified at ±0.1 mV/°C for reliable baseline stability over temperature, while the amplitude accuracy has doubled from ±1.0% to ±0.5% of reading. CT6704 combines 200 A rated current with 30 MHz bandwidth, corresponding to 11.6 ns rise time, and CT6705 combines 500 A rated current with 15 MHz bandwidth, corresponding to 23.3 ns rise time. Typical examples are GaN and SiC power converter development, EV powertrain and inverter testing or switching power supply design and verification. Other major applications are motor drive and industrial power electronics testing, data center backup power and load transient evaluation, renewable energy inverter validation as well as laboratory waveform analysis. | 18.06.2026 06:30:00 | Jun | news_2026-07-01_8.jpg | \images\news_2026-07-01_8.jpg | https://shop.hioki.eu/R-D-Production/Current-Sensing/Wideband-Current-Probes/ | hioki.eu |
| Nanocrystalline EMI Shielding Sheets | Würth Elektronik is expanding its EMC product port... | 13883 | Product Release | Nanocrystalline EMI Shielding Sheets | Würth Elektronik is expanding its EMC product portfolio with nanocrystalline WE-FNCS sheets. The flexible and thin nanocrystalline layers, protected by a PET cover layer, are supplied in the form of adhesive tapes and strips. They attenuate electromagnetic interference signals in the frequency range from around 10 Hz to 120 MHz. The sheets can be used as a simple, cost-effective way to make housings for electronic devices EMC compliant without the need for mu-metal. Both emissions and external interference are challenges for developers during EMC testing, when demonstrating compliance with standards such as CISPR 32, especially in the lower frequency range. Components such as power transformers, common-mode chokes (CMCs), DC/DC converters, inverters, switched-mode power supplies, Hall effect sensors, as well as medical systems including MRI scanners, can generate unwanted magnetic fields or be affected by them. WE-FNCS is a magnetic absorber specifically developed to suppress low-frequency EMI. Its nanocrystalline structure ensures high magnetic permeability and flux saturation, ensuring uniform attenuation across the entire low- and mid-frequency range. By adapting the number of internal nanocrystalline layers, the absorption performance can be scaled to meet the requirements of different applications. Multi-layer configurations with tailored permeabilities help optimize the shielding effectiveness of a solution while keeping it thin, flexible and easy to integrate. This is particularly beneficial in applications where space is limited. Würth Elektronik can supply WE-FNCS with customized formats and layer configurations. | 17.06.2026 12:30:00 | Jun | news_2026-07-01_16.jpg | \images\news_2026-07-01_16.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-fncs | we-online.com |
| Event on Test & Measurement for Aerospace Applications | Experience on 7 July 2026 in Berlin how precise te... | 13873 | Event News | Event on Test & Measurement for Aerospace Applications | Experience on 7 July 2026 in Berlin how precise test and measurement technology supports demanding aerospace applications. Look forward to practical technical presentations in English, direct exchange with experts and an equipment exhibition with our partners and manufacturers. The focus will be on specific real-world applications, technical solution approaches and your individual questions. | 17.06.2026 11:00:00 | Jun | news_2026-07-01_6.jpg | \images\news_2026-07-01_6.jpg | https://www.datatec.eu/de/en/ad-seminar-berlin-2026?shopSwitchInitiated=1#vortrag | datatec.eu |
| Manufacturer of Transformer Insulation Kits and Components Acquired | Hitachi Energy announced a major expansion of its ... | 13868 | Industry News | Manufacturer of Transformer Insulation Kits and Components Acquired | Hitachi Energy announced a major expansion of its North American transformer insulation business through signing a definitive agreement to acquire Canduct Group. The investment addresses a bottleneck in the region’s transformer supply chain by expanding the company’s North America regional insulation and components capabilities, strengthening resilience, and accelerating the delivery of essential grid infrastructure. Hitachi Energy’s acquisition of Canduct is expected to close at the beginning of the third calendar quarter of 2026, subject to customary closing conditions. Canduct manufactures transformer insulation kits and components, serving OEMs and repair companies across the U.S. and Canada. Founded in 1982, the company has supplied high-quality transformer insulation solutions to Hitachi Energy for over two decades. By integrating Canduct’s operations and more than 300 employees, Hitachi Energy will expand its capabilities to deliver critical transformer components needed to support the unprecedented growth in electricity demand. | 17.06.2026 06:00:00 | Jun | news_2026-07-01_1.jpg | \images\news_2026-07-01_1.jpg | https://www.hitachienergy.com/news-and-events/press-releases/2026/06/hitachi-energy-bolsters-the-regional-transformer-market-with-strategic-investment-in-north-america | hitachienergy.com |
| PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies | STMicroelectronics’ L6462A transition-mode (TM) po... | 13898 | Product Release | PFC Controller targets Battery Chargers, Power Adapters, and Power Supplies | STMicroelectronics’ L6462A transition-mode (TM) power-factor correction (PFC) controller cuts bill-of-materials (BOM) costs while enhancing efficiency, enabling consumer products and power supplies up to 250W to meet stringent eco-design norms. The L6462A uses a current generator and shaper to produce a sinusoidal reference, instead of a conventional voltage sensor and analog multiplier, permitting boost-PFC converters without external voltage-divider components. In addition, the IC coordinates the PFC conversion cycles by sensing inductor demagnetization via the gate-driver output and hence requires no auxiliary inductor winding or interface components.In addition to lowering BOM, the L6462A’s innovative current shaping and demagnetization sensing minimizes distortion (THD) and enhances efficiency, particularly at intermediate and light loads. The controller thus permits economical PFC with superior performance, targeting high-end battery chargers, power adapters, and power supplies for domestic and consumer products like flat-panel televisions and lighting drivers. The idle current is below 60μA, helping equipment meet strict eco-design rules on standby power. At full load, the L6462A operates in quasi-resonant mode - valley switching - to minimize power dissipation. As the load is reduced, valley skipping progressively reduces the operating frequency to maintain efficiency. In addition, the controller has a deep burst-mode threshold that ensures smooth dimming in LED-lighting applications. | 16.06.2026 10:30:00 | Jun | news_2026-07-15_15.jpg | \images\news_2026-07-15_15.jpg | https://www.st.com/content/st_com/en/campaigns/unlock-efficient-lighting-design-with-l6462a-asp-mchvcon.html?icmp=tt49864_gl_pron_jun2026 | st.com |
| Fast 1200 V Rectifiers | Vishay Intertechnology expanded its Gen 7 platform... | 13910 | Product Release | Fast 1200 V Rectifiers | Vishay Intertechnology expanded its Gen 7 platform of 1200 V FRED Pt® Hyperfast rectifiers with six additional devices in the eSMP® series SMPC HV package. Suited for industrial, automotive, and energy applications, the 1 A, 2 A, and 3 A rectifiers aim to offer the best trade-off between reverse recovery charge (Q<sub>rr</sub>) and forward voltage drop for devices in their class, but also to provide the lowest junction capacitance and recovery time. The rectifiers released include the VS-E7SX0112-M3V, VS-E7SX0212-M3V, and VS-E7SX0312-M3V, and AEC-Q101 qualified VS-E7SX0112HM3V, VS-E7SX0212HM3V, and VS-E7SX0312HM3V. To reduce switching losses and increase efficiency, the devices combine a recovery time of 50 ns with Q<sub>rr</sub> down to 105 nC typical, forward voltage drop down to 1.45 V, and junction capacitance down to 7.25 pF. The rectifiers offer non-repetitive peak surge current up to 70 A in a compact package measuring 4.3 mm × 6.5 mm with a 1.1 mm profile, which is footprint-compatible with the TO-277A. Combined with a minimum 5.4 mm creepage distance and molding compound with a comparative tracking index (CTI) ≥ 600 (Material Group I), the devices reduce component counts and lower BOM costs based on IEC 60664-1 requirements for high voltage applications. The devices will serve as clamp, snubber, and freewheeling diodes in flyback auxiliary power supplies and high frequency rectifiers for bootstrap driver functionality. Typical applications for the devices include industrial drives and tools, on-board chargers and motors for electric vehicles (EV), energy generation and storage systems, and more. | 16.06.2026 10:30:00 | Jun | news_2026-08-01_10.jpg | \images\news_2026-08-01_10.jpg | https://www.vishay.com/en/company/press/releases/2026/VS-E7SX0112-M3V-et-al/ | vishay.com |
| High-Isolation Gate Drive Converters | Murata introduces its MGJ1T series, a range of 6 k... | 13880 | Product Release | High-Isolation Gate Drive Converters | Murata introduces its MGJ1T series, a range of 6 kV DC isolated 1 W surface-mount DC/DC converters. It is designed for powering high-side and low-side gate drive circuits in inverter, power conversion and motor drive systems. The MGJ1T series has been developed for increasing system voltages and switching speeds in applications such as energy storage systems (ESS/BESS), microgrids, EV charging infrastructure, industrial motor drives, and high-voltage power converters. Configured as a 1 W solution, the converters support nominal input voltages of 12 V, 15 V and 24 V, and provide regulated dual outputs of +15 V /-3 V, +15 V /-5 V and +18 V /-2.5 VEach device is 100% production ‘HiPot’ tested to 6 kV<sub>DC</sub> for one second and qualified to the same level for one minute, ensuring robust dielectric strength. The series is recognised to UL62368-1 and provides reinforced insulation with a working voltage of 800 V<sub>rms</sub>, for applications requiring high levels of protection with a continuous barrier withstand voltage of 2.2 kV<sub>DC</sub>. Internal construction achieves 14 mm creepage and clearance, supporting reliable operation in high-voltage environments. The MGJ1T shows a CMTI greater than 200 kV/μs. Combined with an isolation capacitance of typically 2.5 pF, this reduces high-frequency noise coupling across the isolation barrier and supports stable switching in SiC-based designs. Operating at a switching frequency of approximately 700 kHz, the converters achieve a typical ripple and noise of 10 mV<sub>p-p</sub> and efficiencies up to 77 %. | 09.06.2026 23:33:00 | Jun | news_2026-07-01_13.jpg | \images\news_2026-07-01_13.jpg | https://www.murata.com/en-eu/news/power/isolated-gate-drive-power/2026/0609-2 | murata.com |
| Top-Side Cooling Package for SiC MOSFETs | ROHM has developed the TSC3PAK (14.00 × 18.5... | 13881 | Product Release | Top-Side Cooling Package for SiC MOSFETs | ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50 mm³) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, this product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L)), which, in turn, contributes to greater efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors used in xEVs (electric vehicles). Conventional SiC devices have generally relied on through-hole packages, which provide excellent heat dissipation during high-power operation. However, through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Against this backdrop, surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package. The TSC3PAK offers a creepage distance of 6.66 mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. By enabling safe insulation design in high-voltage applications, the TSC3PAK also contributes to reduced mounting costs and higher reliability. | 09.06.2026 22:22:00 | Jun | news_2026-07-01_14.jpg | \images\news_2026-07-01_14.jpg | https://www.rohm.com/news-detail?news-title=2026-06-09_news_tsc3pak&defaultGroupId=false | rohm.com |
| Institution in the Field of Electromagnetic Compatibility Research | Würth Elektronik representatives joined faculty an... | 13891 | Industry News | Institution in the Field of Electromagnetic Compatibility Research | Würth Elektronik representatives joined faculty and students to celebrate the tenth anniversary of the jointly established "Cátedra EMC Würth Elektronik – Universitat de València." Chair holders Professor José Torres, Professor Adrian Suarez, Ph.D., Jorge Victoria, and Antonio Alcarria, Product Managers at Würth Elektronik eiSos, welcomed Alexander Gerfer, Chief Technology Officer (CTO) of the Würth Elektronik Group, as the keynote speaker at the ceremony. Representing the university, Inmaculada Coma, Vice-Rector of the Universitat de València, praised the fruitful collaboration. The Chair of Electromagnetic Compatibility (EMC) was established ten years ago to advance both research and practical applications in this field. Since then, it has supervised doctoral dissertations as well as master’s and bachelor’s theses, delivered seminars and courses on EMC topics, and organized presentations at international conferences. Each year, Würth Elektronik proposes projects that enable internships both in the chair’s laboratory and at company’s headquarters. Coordination of these activities is overseen by PhD Jorge Victoria and Antonio Alcarria from Würth Elekronik’s Product Management team. "At Würth Elektronik, it’s always about the people. For us, support isn’t limited to customers; we also stand by researchers with advice and assistance and support student initiatives, for example. EMC has always been an important field for us, and with the Cátedra EMC, we fulfilled a dream ten years ago," said Alexander Gerfer, CTO of the Würth Elektronik eiSos Group, in his speech, and thanked everyone involved. | 09.06.2026 12:00:00 | Jun | news_2026-07-15_7.jpg | \images\news_2026-07-15_7.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=10-jahre-catedra | we-online.com |
| Focus on E-mobility, AI Data Centers, Renewable Energy and Smart Energy at PCIM Asia Shenzhen 2026 | PCIM Asia Shenzhen 2026 will focus on the power el... | 13874 | Event News | Focus on E-mobility, AI Data Centers, Renewable Energy and Smart Energy at PCIM Asia Shenzhen 2026 | PCIM Asia Shenzhen 2026 will focus on the power electronics needs of three application markets placing new demands on power infrastructure: e-mobility, AI data centers, renewable energy & smart energy. Part of this Asian event series for the power electronics industry, the exhibition returns to the Shenzhen World Exhibition & Convention Center from 26 – 28 August 2026. It will expand its scale to 30,000 sqm, with more than 300 domestic and international exhibitors expected to participate and welcome professional visitors from around the world. At the show Mitsubishi Electric and Infineon will serve as strategic partners, while Semikron Danfoss, Fuji Electric and ROHM will participate as platinum sponsors. Long-term exhibitors such as CRRC and Power Integrations will also take part, alongside a number of new exhibitors joining the 2026 edition. Exhibits will showcase the components, equipment and applied solutions supporting the sector from development and manufacturing to finished applications. Technology coverage areas include integrated circuits, power semiconductors, sensors, power supplies, electronic testing and measurement, passive components, connectors, switches, semiconductor manufacturing and inspection technologies. This year there will also be e.g. an AI Data Centre Power Ecosystem Zone addressing the growing energy demands that large-scale AI computing places on data centre infrastructure. Focusing on the full power delivery chain from grid interfaces to chip-grade power transmission, the zone will present high-voltage DC power supplies, solid-state transformers, high-power-density modules and advanced liquid cooling systems. Three concurrent forums, the AI Power Application Forum, the Smart Drive and Control Forum and the GaN for Physical Conference, will examine the relevant technical and design considerations. | 09.06.2026 12:00:00 | Jun | news_2026-07-01_7.jpg | \images\news_2026-07-01_7.jpg | https://pcimasia-shenzhen.cn.messefrankfurt.com/shenzhen/en/press/press-releases/2026/PCIM26_PR3.html | pcimasia-shenzhen.cn |
| Power MOSFETs in wettable Flank Package | Taiwan Semiconductor introduces the TQM series of ... | 13899 | Product Release | Power MOSFETs in wettable Flank Package | Taiwan Semiconductor introduces the TQM series of automotive-grade power MOSFETs. The n-channel, 40V/60V devices come in a wettable flank PDFN56U package supporting drop-in pin compatibility with other package types. The wettable flank connections are ideal for automated placement, meeting automotive board mount testing and AEC-Q qualification testing and high yield manufacturability. Their low-profile packaging with heat-spreader contacts provides excellent thermal management and increased power density to meet the demands of many applications. In addition to 48V automotive systems, applications include industrial, solenoid and motor control, server power and other high-reliability DC-DC converters. "The PDFN56U footprint compatibility makes drop-in replacement for TDSON-8, LFPAK56 and DFN5x6 packages very straightforward – selecting our PDFN56U package with its wettable flank simplifies automotive test procedures," said Sam Wang, vice president, TSC Products. "The AEC-Q quality and reliability are also of benefit and many non-automotive applications where high reliability is required." | 09.06.2026 11:30:00 | Jun | news_2026-07-15_16.jpg | \images\news_2026-07-15_16.jpg | https://www.taiwansemi.com/en/product-filter/?category=mosfets-20 | taiwansemi.com |
| 1200 V SiC MOSFETs in Top-Side cooled SMD Package | Nexperia released 1200 V silicon carbide MOSFETs i... | 13882 | Product Release | 1200 V SiC MOSFETs in Top-Side cooled SMD Package | Nexperia released 1200 V silicon carbide MOSFETs in QDPAK packaging, which is a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Available in both industrial-grade and automotive-qualified variants, the portfolio offers R<sub>DS(on)</sub> options of 17, 30, 40, 60 and 80 mΩ, delivering a scalable QDPAK platform for applications ranging from high-power systems to compact designs with demanding thermal and mechanical constraints. QDPAK packaging addresses a key limitation in high-voltage power conversion systems: heat dissipation through the PCB. By enabling a direct die-to-heatsink thermal path from the top side of the package, these devices reduce reliance on the board as the primary heat-spreading path and allow the semiconductor and PCB thermal domains to be managed more independently. Compared to conventional D2PAK-7 packaging, top-side cooled packages can deliver up to 3 kW higher output power at comparable thermal limits, while also providing around 40 °C additional thermal headroom at the same power level. Building on the existing X.PAK platform, QDPAK further extends power handling capability, enabling operation at approximately 3 kW higher power at comparable case temperatures, while offering around 23 °C additional thermal headroom at similar power levels. Well suited for EV onboard chargers (OBC), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives and datacenter power systems. | 09.06.2026 11:30:00 | Jun | news_2026-07-01_15.jpg | \images\news_2026-07-01_15.jpg | https://www.nexperia.com/about/news-events/press-releases/nexperia-brings-QDPAK-packaging-to-1200-V-SiC-MOSFETs-to-overcome-thermal-bottlenecks-in-high-power-designs | nexperia.com |
| Strategic Collaboration on SiC Power Modules for Automotive Applications | Nexperia and Semikron Danfoss have signed a Memora... | 13872 | Industry News | Strategic Collaboration on SiC Power Modules for Automotive Applications | Nexperia and Semikron Danfoss have signed a Memorandum of Understanding (MoU) to explore a strategic collaboration on SiC-based power modules for automotive traction inverter applications. The collaboration aims to combine Nexperia’s expertise in SiC semiconductor technology with Semikron Danfoss’ capabilities in power module packaging and integration. Together, the companies intend to evaluate how a joint approach can enable high-performance, scalable solutions for next-generation electric vehicles. SiC technology plays a critical role in improving the efficiency, power density, and performance of electric drivetrains. By bringing together complementary competencies across the value chain – from chip to module – the companies aim to advance optimized solutions tailored to the demanding requirements of automotive applications. As part of the collaboration, both companies will explore joint engineering approaches, including early integration and co-design, to unlock the full performance potential of SiC-based systems. Both companies share a strong European heritage and longstanding industry experience, providing a foundation for exploring future collaboration opportunities in the automotive power electronics space. | 09.06.2026 10:00:00 | Jun | news_2026-07-01_5.jpg | \images\news_2026-07-01_5.jpg | https://www.nexperia.com/about/news-events/press-releases/nexperia-and-semikron-danfoss-explore-strategic-collaboration-on-sic-power-modules-for-automotive-applications | nexperia.com |
| Reference Design for compact GaN-based 3-Phase BLDC Motor Drive Inverters | Efficient Power Conversion (EPC) introduced the EP... | 13878 | Product Release | Reference Design for compact GaN-based 3-Phase BLDC Motor Drive Inverters | Efficient Power Conversion (EPC) introduced the EPC91132, a compact 3-phase BLDC motor drive inverter reference design based on the EPC33110 GaN three-phase module. The EPC91132 is a 23 mm reference design inverter for small motor drives for humanoid wrists and hands and for drones. It incorporates the EPC33110 GaN module, containing three half bridges, gate drivers, bootstrap circuitry and level shifters in a 6 mm x 6.5 mm QFN package. The module can be powered by a single 5 V power supply up to 80 V with typical on-resistance of 11.7 mΩ and supporting 3.3 V or 5 V logic inputs. Operating in the 10 V to 60 V DC input range it includes the key functions needed for an inverter including a microcontroller, regulated power supplies, DC bus voltage sensing, current sensing with embedded overcurrent protection and onboard magnetic encoder for rotor position and speed control. The platform is programmable through a dedicated connector and can be monitored in real time through the RS-485 communication. The board has been designed with a flexible breakout-ring concept to support various form factors. With the outer ring removed, the board is 23 mm in diameter, which means it could be incorporated into small drone motors such as the Vertiq 23-06 platform. Performance tests have shown that the module can provide a continuous current of 11 A<sub>RMS</sub> per phase for humanoid robotic joint applications operating at 48 V and switching frequency up to 100 kHz. Complete design support files, including schematics, bill of materials (BOM), and Gerber files, are available for download. | 09.06.2026 09:30:00 | Jun | news_2026-07-01_11.jpg | \images\news_2026-07-01_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3320/epc-introduces-smallest-gan-drive-based-on-epc33110-for-robots-and-drones | epc-co.com |
| Power Company and Processor Provider join Forces | Cambridge GaN Devices (CGD) joins forces with NXP&... | 13871 | Industry News | Power Company and Processor Provider join Forces | Cambridge GaN Devices (CGD) joins forces with NXP® Semiconductors to accelerate time to market in data centre and automotive markets. This long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s GaN products, early access to next-generation CGD GaN developments, and the team’s expertise in GaN processes and technologies. At the same time, CGD will benefit from access to NXP’s processor and analog product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions. GaN semiconductors enable switching at higher frequencies and achieve greater efficiency compared to competing technologies. The rapidly increasing power demands in data centres is particularly driven by the growing use of AI. A single rack might have only consumed 40 kW in 2022 yet today can draw 200 kW or more and it is expected that a single rack will require 1 MW or more by 2030. The increased compute density and modern power architectures place stringent requirements on power density and the need to deliver high step-down ratios while maintaining power efficiency. ICeGaN® is positioned to address these requirements aiming to enable higher switching frequency operations, higher power density and delivering superior reliability compared to discrete GaN solutions. | 09.06.2026 09:00:00 | Jun | news_2026-07-01_4.jpg | \images\news_2026-07-01_4.jpg | https://camgandevices.com/en/p/cgd-joins-forces-with-nxp-semiconductors-to-accelerate-time-to-market/ | camgandevices.com |
| Precise Fluxgate AC/DC Current Transducer | Danisense introduced a compact MBC4000I fluxgate A... | 13877 | Product Release | Precise Fluxgate AC/DC Current Transducer | Danisense introduced a compact MBC4000I fluxgate AC/DC current transducer for current measurements of up to 4000A and more. The device delivers measurement performance levels up to 10 times higher than conventional Hall-effect transducer solutions currently on the market. Built on Danisense’s closed-loop fluxgate technology, the product provides an accuracy below 0.05% over the temperature range from -20 °C up to +85 °C and low sensitivity drift. Featuring an aperture of Ø 121 mm for busbar applications, a 1:5000 primary-to-secondary ratio, and minimal offset drift over temperature, the transducer is suited for demanding high-current measurement environments. | 09.06.2026 08:30:00 | Jun | news_2026-07-01_10.jpg | \images\news_2026-07-01_10.jpg | https://danisense.com/products/mbc4000i/ | danisense.com |
| Low-Voltage Motor Driver Portfolio for Industrial and Smart Appliance Applications | NOVOSENSE’s NSD7305 and NSD7308 are 40V brushed DC... | 13896 | Product Release | Low-Voltage Motor Driver Portfolio for Industrial and Smart Appliance Applications | NOVOSENSE’s NSD7305 and NSD7308 are 40V brushed DC motor drivers supporting both H-bridge and half-bridge configurations. The devices feature configurable output slew rate control and spread-spectrum clocking to help optimize EMI performance in motor drive systems. Integrated current mirror sensing eliminates the need for external sense resistors, helping simplify PCB design and reduce system cost. The devices also integrate protection and diagnostic functions including VM voltage monitoring, overcurrent protection, overtemperature protection, and open-load and short-circuit diagnostics. The NSD7305 supports up to 21A peak current with 47mΩ R<sub>DS(ON)</sub>, while the NSD7308 supports up to 12A peak current with 84mΩ R<sub>DS(ON)</sub>. Both devices support hardware and SPI interface versions and are designed as drop-in replacements for existing industry solutions. For compact motor control applications, the NSD7309 integrates a single-channel H-bridge driver supporting up to 8A peak current and 120mΩ R<sub>DS(ON)</sub>. The device supports PWM control, integrated current regulation, and comprehensive protection functions including undervoltage, overvoltage, overcurrent, and overtemperature protection. Typical applications include smart home devices, robotic appliances, electric curtains, massage chairs, and industrial control equipment. | 09.06.2026 08:30:00 | Jun | news_2026-07-15_13.jpg | \images\news_2026-07-15_13.jpg | https://www.novosns.com/en/brushed-dc-motor-drivers | novosns.com |
| Protection Solution for Data Centers, Renewable Energy and Charging Stations | Mersen’s high-performance fuses save space for equ... | 13876 | Product Release | Protection Solution for Data Centers, Renewable Energy and Charging Stations | Mersen’s high-performance fuses save space for equipment manufacturers and increase flexibility in installation. Whereas the engineers previously needed two different fuse types for AC and DC applications, only one is now required. The product range covers several rated currents, and the fuses can be used as standard AC fuses, aR fuses or fast-acting fuses. Their primary application area is power electronics, power conversion systems like but not limited to inverters, SST, CS and MCS. These systems convert direct current – e.g., from PV and wind energy plants – into grid-compatible alternating current. Manufacturing is performed on fully automated production lines in accordance with the latest technical standards (IEC, UL, CCC, RoHS, REACH, WEEE). Mersen also provides users with a range of data from simulation processes that demonstrate the fuse’s behavior in a customer-specific application. This facilitates product selection to match the respective requirements. Now there are two new sizes available for emerging DC applications up to 1000 V/1000 A. | 09.06.2026 07:30:00 | Jun | news_2026-07-01_9.jpg | \images\news_2026-07-01_9.jpg | https://www.mersen.com/en | mersen.com |
| Magnetics Design Platform now allows Planar Transformers plus Thermal Modelling | Frenetic Electronics adds new features to its web-... | 13869 | Industry News | Magnetics Design Platform now allows Planar Transformers plus Thermal Modelling | Frenetic Electronics adds new features to its web-based custom magnetics design platform, that aim to help solve magnetic challenges. An example of this approach is Frenetic’s planar magnetics design and simulation tool. Addressing another challenge, in the automotive sector where thermal constraints and power density are becoming increasingly demanding, Frenetic has introduced capabilities such as potting simulation and liquid cooling plate modeling. As power electronics systems move toward higher switching frequencies and more compact, integrated designs, planar magnetics are becoming increasingly common, yet also significantly more complex to design due to parasitics, thermal constraints, and integration requirements. Frenetic Simulator is used across multiple industries, including automotive, aerospace and data centres, each with very different constraints. Rather than building generic features, Frenetic is evolving its platform by working closely with these industries and understanding how magnetic design challenges differ across applications. The potting simulation capability allows automotive engineers to account for the thermal and electromagnetic impact of resin materials surrounding the transformer, which can significantly affect component behaviour. And cooling plate / liquid cooling support enables the modeling of metallic cooling structures integrated into the transformer and connected to liquid cooling systems, a growing requirement in high-power automotive applications. | 09.06.2026 07:00:00 | Jun | news_2026-07-01_2.jpg | \images\news_2026-07-01_2.jpg | https://www.frenetic.ai/ | frenetic.ai |
| Isolated Through-Hole Package for SiC MOSFETs for Direct-Cooled Thermal Management | Navitas Semiconductor launched the UHV TO 247 4 IS... | 13879 | Product Release | Isolated Through-Hole Package for SiC MOSFETs for Direct-Cooled Thermal Management | Navitas Semiconductor launched the UHV TO 247 4 ISO package, which is purpose built for 1200 V to 3300 V GeneSiC™ SiC MOSFETs, delivering module like performance in a compact discrete form factor. It offers over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation. When compared with standard non-isolated through-hole packages, this package not only eliminates the need for external high-voltage isolation but also improves thermal and EMI performance. This expands Navitas’ packaging portfolio, including SiCPAK® power modules, QDPAK, TO 247 LP, and other solutions, for more efficient, denser, scalable power systems in energy, grid, and AI data centers. A high-voltage isolated, reflow-compatible thermal pad lets the package mount directly to liquid- or air-cooled heat sinks, eliminating external TIM. This reduces R<sub>TH,J-HS</sub> by up to 60 %, leading to up to 150 % increased power dissipation capability, improving power density, reliability, manufacturability, and overall system cost. Integrated high-voltage isolation reduces die-to-heatsink stray capacitance compared to external ceramic-based isolators, effectively minimizing common-mode noise and radiated EMI. This enables higher switching speeds and delivers improved power density, increased system efficiency, and reduced system-level costs associated with EMI mitigation. The package is compatible with the established high-voltage TO 247-4 form factor and lead geometry. | 08.06.2026 10:30:00 | Jun | news_2026-07-01_12.png | \images\news_2026-07-01_12.png | https://navitassemi.com/navitas-introduces-isolated-through-hole-package-for-sic-mosfets-enabling-direct-cooled-thermal-management/ | navitassemi.com |
| Silicon Carbide Technology is the Core Element in Semiconductor Circuit Breakers | Infineon Technologies and Siemens are partnering t... | 13870 | Industry News | Silicon Carbide Technology is the Core Element in Semiconductor Circuit Breakers | Infineon Technologies and Siemens are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide power modules to Siemens for use in its SENTRON 3QD2 semiconductor circuit breakers. Unlike traditional electromechanical circuit breakers, which rely on mechanical parts to interrupt the flow of current and typically operate on the millisecond scale, the Siemens SENTRON 3QD2 uses semiconductor components and smart protection algorithms to perform this function. This enables ultra-fast interruption in the microsecond range, up to 1,000 times faster than conventional systems. This capability is essential for DC grids and offers a significant increase in protection and system availability, which is crucial in applications like industrial manufacturing and AI data centers, where even a slight delay can cause costly downtime, data loss or expensive hardware damage in the event of electrical failures. The collaboration addresses the increasing demands of power critical applications, where speed, precision and reliability are essential. By integrating Infineon’s 62 mm CoolSiC™ MOSFET module 1200 V into Siemens’ protection concepts, the companies are contributing to more resilient, efficient and future-ready power infrastructure. This joint approach supports the growing adoption of DC grids and highly electrified environments, helping industrial and infrastructure operators meet rising performance and reliability requirements. | 08.06.2026 08:00:00 | Jun | news_2026-07-01_3.jpg | \images\news_2026-07-01_3.jpg | https://www.infineon.com/press-release/2026/infgip202606-107 | infineon.com |
| Jointly Developed Package for Power Semiconductor Modules | Mitsubishi Electric announced that it has jointly ... | 13894 | Product Release | Jointly Developed Package for Power Semiconductor Modules | Mitsubishi Electric announced that it has jointly developed a new standard package for power modules with integrated 3-level circuits, designed for industrial drive equipment and renewable energy systems, in collaboration with Semikron Danfoss Elektronik. This new standard package is based on Mitsubishi Electric’s LV100-type package for high-power applications and Semikron Danfoss’s SEMITRANS20 package. By optimizing terminal layout and functions specifically for 3-level circuits while ensuring compatibility between the two companies’ products, the package will help customers standardize their inverter designs. As the movement toward Green Transformation (GX) accelerates to realize a decarbonized society, demand is growing for power semiconductors that efficiently convert electricity. Particularly in the industrial sector, to further reduce power consumption, there is increasing adoption of 3-level circuits, which offer higher efficiency and allow for smaller peripheral components compared to conventional 2-level circuits. The package, jointly developed by Mitsubishi Electric and Semikron Danfoss, incorporates a 3-level T-type circuit, contributing to higher efficiency and more compact inverter designs. Furthermore, the optimal arrangement of main electrode terminals and auxiliary control terminals specifically for 3-level T-type circuits enhances inverter design flexibility. Moving forward, both companies will independently develop products using this new standard package, contributing to standardized inverter designs. | 08.06.2026 06:30:00 | Jun | news_2026-07-15_11.png | \images\news_2026-07-15_11.png | https://de.mitsubishielectric.com/en/pr/global/2026/0608_sd/ | mitsubishielectric.com |
| Collaboration on high-voltage SiC Technology for Railway Systems | Mitsubishi Electric Europe B.V., Semiconductor Div... | 13852 | Industry News | Collaboration on high-voltage SiC Technology for Railway Systems | Mitsubishi Electric Europe B.V., Semiconductor Division, and Siemens Mobility GmbH, Business Unit Rolling Stock, are strengthening their collaboration on high-voltage silicon carbide (SiC) technology for railway traction applications with the signing of a long-term agreement. Building on the Memorandum of Understanding (MoU) signed in 2022 and leveraging their complementary strengths, both companies are advancing the development, qualification, and industrialization of SiC-based power modules to support more energy-efficient and high-performance railway drive systems. The collaboration provides a framework for ongoing technical exchange and the evaluation of next generation SiC solutions for future railway platforms. High-voltage SiC technology has already demonstrated its capabilities in railway applications. Traction systems equipped with SiC-based modules are operating in regular passenger service in selected Siemens Mobility projects, contributing to improved efficiency, lower energy consumption, and reliable system performance under real-world conditions. Based on these operational experiences and a well-established, reliable supply relationship, Siemens Mobility and Mitsubishi Electric Europe B.V., Semiconductor Division, continue to explore the application of advanced SiC module technologies in upcoming railway projects. Activities include the qualification of new module generations, optimization of system integration, and validation under demanding operating conditions typically required for high-capacity commuter and regional rail services. | 05.06.2026 06:00:00 | Jun | news_2026-06-15_1.jpg | \images\news_2026-06-15_1.jpg | https://www.mitsubishielectric.com/en/ | mitsubishielectric.com |
| 800 VDC Converters for Next-Generation AI Data Centers | Advanced Energy Industries announced the ADH serie... | 13865 | Product Release | 800 V<sub>DC</sub> Converters for Next-Generation AI Data Centers | Advanced Energy Industries announced the ADH series of DC/DC converters designed for next generation 800 V DC AI data center power architecture. The ADH series converts 800 V DC input into 50 V DC output, operating at multi-MHz switching frequency with a peak power efficiency of 98.2 %. The converters deliver up to 8 kW peak power and 6 kW full load power in a standard half-brick package, delivering peak power density of over 2,700 W/In<sup>3</sup> and full load power density of over 2,000 W/In<sup>3</sup>. By combining the ADH series with the NDQ series of ultra-efficient 50 V DC to 12 V DC non-isolated bus converter (NIBC) and the newly developed Hot Swap Control (HSC) module, which manages inrush current and provides additional protection functions, Advanced Energy delivers complete 800 V<sub>DC</sub> power solutions that enable higher power levels and the increased power density required for megawatt-capable AI server racks. | 03.06.2026 13:30:00 | Jun | news_2026-06-15_14.png | \images\news_2026-06-15_14.png | https://ir.advancedenergy.com/news/advanced-energy-introduces-800-v-dc-converters-for-next-generation-ai-data-centers-new-dc-dc-converters/4a23cb7c-eda6-405d-b5f6-5081b61c4c01 | advancedenergy.com |
| Teaming up to establish U.S. Gallium Supply Chain | Indium Corporation® and Ames National Laborato... | 13853 | Industry News | Teaming up to establish U.S. Gallium Supply Chain | Indium Corporation® and Ames National Laboratory have announced a research and development partnership to expand U.S. production of gallium. The alliance will focus on developing the technologies needed to establish a domestic supply chain for an element that currently relies almost exclusively on imported sources. In the U.S., gallium is recovered as a byproduct of well-established, high-volume aluminum refining operations. Called the Bayer process, this method uses caustic liquids and high temperatures to extract and refine aluminum from raw ore. Gallium is typically present in the refining process waste in low concentrations of about 100 parts per million. Liquid-based refining methods typically use specialized polymers (resins), that can separate and concentrate metals from mining solutions. For this project, Ames Lab researchers are designing a heat-stable, efficient resin that is selective for gallium. Ames Lab’s robotic lab capabilities can generate high-quality data quickly. When paired with AI tools, the data can be rapidly analyzed to uncover patterns, optimize processes, and guide the iterative design of materials. These accelerated workflows can shrink the development timeline from decades to as little as two to three years. Scaling the technology is a joint effort, which will be done through a Cooperative Research and Development Agreement (CRADA): Indium Corporation will provide a U.S. resin testbed that mirrors high-volume production and techno-economic models to define the required material properties, and Ames Lab will synthesize materials up to the hundreds-of-grams scale. Future scale-up to kilograms and tons will continue collaboratively. | 03.06.2026 07:00:00 | Jun | news_2026-06-15_2.jpg | \images\news_2026-06-15_2.jpg | https://www.indium.com/press-releases/indium-corporation-ames-national-laboratory-team-up-to-establish-u-s-gallium-supply-chain/ | indium.com |
| SMD Fuse for High-Current 48 VDC AI Data Center Protection | Littelfuse announced the NANO2® Surface-Mount ... | 13864 | Product Release | SMD Fuse for High-Current 48 V<sub>DC</sub> AI Data Center Protection | Littelfuse announced the NANO2® Surface-Mount 708 Series Fuse, a surface-mount fuse offering a 14,000 A interrupting rating at 80 V DC. Engineered for next-generation 48 V DC power architectures, the 708 Series addresses the growing protection demands of AI servers, hyperscale data centers, and high-density power distribution systems. As power levels rise and board space shrinks, designers have been forced to rely on oversized, manually installed through-hole or bolt-down fuses. The 708 Series provides an automation-friendly alternative without compromising performance. It provides current ratings of 60 A to 200 A in a surface-mount package. The 708 Series is designed as supplemental overcurrent protection for circuits where high fault current is anticipated, including power distribution units (PDUs), power shelves, battery backup units (BBUs), and power supply units (PSUs). It is also suited for AI server clusters, networking equipment, and hyperscale data center infrastructure. Additional applications include renewable energy systems and battery management systems (BMS), where compact, high-power protection solutions are critical. | 02.06.2026 12:30:00 | Jun | news_2026-06-15_13.jpg | \images\news_2026-06-15_13.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-nano2-smd-708-series-fuse-enables-high-current-48-vdc-ai-data-center-protection | littelfuse.com |
| Complementary 30 V Dual MOSFET | Toshiba launched the SSM6L826R, a 30 V dual MOSFET... | 13863 | Product Release | Complementary 30 V Dual MOSFET | Toshiba launched the SSM6L826R, a 30 V dual MOSFET that integrates both N-channel and P-channel MOSFETs in a single package. The product is suited for applications including single-phase brushless DC (BLDC) motor control, brushed DC motor control, and load switches for power supply lines in consumer and industrial control equipment. The SSM6L826R uses Toshiba’s UMOSVIIH process for the N-channel MOSFET and the UMOSVI process for the P-channel MOSFET. It is housed in a compact TSOP6F package (2.9 mm × 2.8 mm × 0.8 mm) with flat leads. The device achieves drain-source on-resistance (R<sub>DS(ON)</sub>) values of 46 mΩ (max.) (V<sub>GS</sub> = 10 V) for the N-channel MOSFET and 45 mΩ (max.) (V<sub>GS</sub> = -10 V) for the P-channel MOSFET. | 02.06.2026 11:30:00 | Jun | news_2026-06-15_12.jpg | \images\news_2026-06-15_12.jpg | https://toshiba.semicon-storage.com/eu/company/news/2026/06/MOSFET-20260602-1.html | toshiba.semicon-storage.com |
| How 800V EV Innovations are Redefining AI Data Centers | According to IDTechEx forecasts in the market repo... | 13857 | Industry News | How 800V EV Innovations are Redefining AI Data Centers | According to IDTechEx forecasts in the market report "Power Electronics Market 2026-2036: Data Centers, Electric Vehicles, and Renewables", the power electronics market for data centers is expected to grow 2.5-fold by 2036. A paradigm shift in data center power architecture is coming over the next few years in the form of HVDC (800 V<sub>DC</sub>) data centers, which will unlock an order-of-magnitude increase in rack power. This overhaul in data center power architecture is directly influenced by 800 V EV power electronics, from the materials used to high-voltage safety and protection mechanisms. In its study IDTechEx tracks innovations across EV and data center power electronics, drawing deep, cross-application conclusions between EV and data center power electronics. Rack power levels have exploded from around 20 kW pre-ChatGPT to 100 kW today, with rack power expected to reach over 1 MW by the end of the decade. With incumbent Si power electronics and 480/54 V data center architecture, a 1 MW rack would require the whole rack space to be dedicated to power conversion and would need over 200 kg of copper. Data center efficiency was and still is a key consideration in data center design. Data center power density, the amount of power processed per unit volume, will become an increasingly critical metric for AI data center design. GaN will likely enjoy faster uptake in data centers than in electric vehicles. Reference designs for 8 kW and 12 kW power supply units (PSUs) across leading power electronics players, such as Infineon and Navitas, feature SiC for high-voltage conversion stages and power factor correction (PFC), and GaN for low-voltage conversion stages. | 02.06.2026 11:00:00 | Jun | news_2026-06-15_6.png | \images\news_2026-06-15_6.png | https://www.idtechex.com/en/research-report/power-electronics-market/1152 | idtechex.com |
| High Current Chip Ferrite Beads for EMI Suppression in High Density Power | Bourns announced the MH3261 T Series High Current ... | 13866 | Product Release | High Current Chip Ferrite Beads for EMI Suppression in High Density Power | Bourns announced the MH3261 T Series High Current Chip Ferrite Beads, designed to address EMI suppression challenges in high density PCB layouts where current capacity and board space are constrained. The series combines a 3.2 mm × 1.6 mm footprint with a rated current capability up to 11 A, enabling noise suppression without introducing excessive power loss. These characteristics support stable performance in space limited designs. As power densities increase and PCB assemblies become more compact, designers face tighter limits on allowable insertion loss while maintaining effective high frequency noise suppression. Ferrite beads used in these environments must carry higher currents without thermal overstress or impedance degradation. The MH3261 T Series addresses these constraints by pairing low DCR with a wide impedance range, supporting EMI control in dense layouts while operating across a broad temperature range from –55 °C to +125 °C. Its DC resistance is 0.0025 Ω , while the impedance range values from 30 Ω to 1000 Ω at 100 MHz. | 01.06.2026 14:30:00 | Jun | news_2026-06-15_15.jpg | \images\news_2026-06-15_15.jpg | https://bourns.com/news/press-releases/pr/2026/06/02/bourns--mh3261-t-series-high-current-chip-ferrite-beads-for-emi-suppression-in-high-density-power | bourns.com |
| 800 V-to-12.5 V Power Conversion for AI Infrastructure built on NVIDIA MGX™ | Efficient Power Conversion (EPC) has provided deta... | 13862 | Product Release | 800 V-to-12.5 V Power Conversion for AI Infrastructure built on NVIDIA MGX™ | Efficient Power Conversion (EPC) has provided details on its EPC91123 evaluation board, an 800 V DC to 12.5 V DC, 6 kW isolated converter designed to support next-generation AI data center power architectures. As a contributor to the NVIDIA MGX™ AI Factory ecosystem, EPC contributes GaN-based power conversion solutions designed to support emerging 800 V DC server architectures, enabling higher power density, improved efficiency, and scalable rack-level power delivery for next-generation AI infrastructure. By enabling direct 12.5 V conversion and eliminating the need for a 48 V intermediate stage, the solution improves overall system efficiency by 1–2 %. The converter is built on an input-series, output-parallel (ISOP) LLC topology and leverages Gen7 devices, including the 3.3 mm × 2.6 mm, 40 V, 0.8 mΩ EPC2366 and 150 V, 2.2 mΩ EPC2305. The solution achieves 98.2 % peak efficiency and 97 % full-load efficiency. Optimized for space-constrained AI server environments, the board delivers high power density in a compact 104 mm × 47 mm × 8 mm form factor. | 01.06.2026 10:30:00 | Jun | news_2026-06-15_11.jpg | \images\news_2026-06-15_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3317/epc-supports-ai-infrastructure-built-on-nvidia-mgx%e2%84%a2-with-high-efficiency-800v-to-125v-power-conversion | epc-co.com |
| Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 VDC AI Data Center | Power Integrations introduced two slim, compact au... | 13861 | Product Release | Slim Auxiliary PSU Reference Designs for NVIDIA Kyber 800 V<sub>DC</sub> AI Data Center | Power Integrations introduced two slim, compact auxiliary power supply reference designs for 800 V DC AI data centers. The single-output, 15 W design is 30 mm by 30 mm with a 7 mm profile, while the isolated, six-rail, 35 W design measures 80 mm by 60 mm with an 8 mm profile. Optimized specifically for the NVIDIA Kyber liquid-cooled, blade-rack architecture, these ultra-compact solutions free up approximately 30 percent space on densely packed main power distribution boards (PDBs) with an estimated 30 percent reduction in the BOM count - streamlining design and improving overall reliability. These designs are highly efficient with at least 88 percent efficiency across line and load. The newly published design example reports describe 35 W and 15 W flyback auxiliary power supplies for high-voltage AI data center applications. Both designs are based on Power Integrations’ InnoMux™-2 ICs with 1700 V PowiGaN™ GaN technology. The 1700 V-rated InnoMux-2 IC supports 1000 V DC nominal input voltage in a flyback configuration and can deliver flat efficiency of 90 percent in discontinuous conduction mode (DCM) while maximizing power delivery. | 01.06.2026 09:30:00 | Jun | news_2026-06-15_10.jpg | \images\news_2026-06-15_10.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-Unveils-Space-Saving-Ultra-Slim-Auxiliary-PSU-Reference-Designs-for-NVIDIA-Kyber-800-VDC-AI-Data-Center/default.aspx | power.com |
| AI-based Magnetics and Power Design Tools in Asia | Frenetic Electronics has signed an agreement with ... | 13854 | Industry News | AI-based Magnetics and Power Design Tools in Asia | Frenetic Electronics has signed an agreement with Szdore Electronics of Shenzhen, China, to provide local support for designers. The company sees that closer relationships with customers is critical for the adoption of its tools in engineering-driven markets. Feedback loops that directly inform product development are also shortened. Frenetic offers three main tools which seamlessly integrate with each other: Frenetic Magnetic Simulator is used to customize and validate cores for transformers and inductors including winding configurations, loss & thermal modeling and leakage inductance. Frenetic Planar exists to design and simulate planar transformers in minutes. AI Converter Assistant helps engineers to move from converter specifications to initial topology suggestions and early-stage design guidance, LTspice & KiCad export. | 01.06.2026 08:00:00 | Jun | news_2026-06-15_3.jpg | \images\news_2026-06-15_3.jpg | https://www.frenetic.ai/ | frenetic.ai |
| Semiconductor Manufacturer joins MGX AI Factory Ecosystem for AI Server Racks | Infineon Technologies has joined NVIDIA’s MGX AI F... | 13856 | Industry News | Semiconductor Manufacturer joins MGX AI Factory Ecosystem for AI Server Racks | Infineon Technologies has joined NVIDIA’s MGX AI Factory ecosystem to help transform power delivery for next-generation AI data centers. Infineon’s power management solutions will support NVIDIA’s MGX™ architecture and 800 V<sub>DC</sub> power architecture, an open, modular reference architecture designed for AI factories in the agentic AI era. 800 V<sub>DC</sub> MGX-compatible power racks help existing AI infrastructure scale AI compute performance and power density, creating an upgrade path for future AI infrastructure. Using Infineon’s GaN technology at switching frequencies close to 1 MHz enables ultra-compact bus converters at a efficiency while the combination of Infineon’s proprietary SiC JFET technology and dedicated control ICs enable protection and hot-swap functionality of native 800 V server boards. Infineon’s power management solutions convert power from 800 V to 50 V, 12 V or even down to 6 V. As part of the NVIDIA MGX AI Factory ecosystem, Infineon supports the complete 800 V<sub>DC</sub> power conversion flow down to an intermediate bus voltage and core voltage in systems based on NVIDIA MGX, helping to reduce conversion stages and deliver DC power closer to the rack. This improves power efficiency, simplifies infrastructure, and supports higher-density AI deployments. | 29.05.2026 10:00:00 | May | news_2026-06-15_5.png | \images\news_2026-06-15_5.png | https://www.infineon.com/press-release/2026/infxx202605-092 | infineon.com |
| Silicon Carbide Power Module operating at 205 °C | Infineon Technologies is introducing a 1300 V SiC ... | 13860 | Product Release | Silicon Carbide Power Module operating at 205 °C | Infineon Technologies is introducing a 1300 V SiC module within the HybridPACK™ Drive family that is capable of continuous operation at temperatures up to 205 °C. Existing designs typically allow up to 175 °C. This increase enables automotive OEMs and Tier 1 suppliers to deliver higher peak and continuous output power from existing inverter designs or, in new designs, reduce system complexity and overall cost. The increased operating temperature enables up to 15 percent higher output current compared to existing designs, directly translating into higher inverter power density. At the same time, maintaining identical module size, footprint, and interfaces allows seamless integration into existing platforms and enables performance upgrades without costly redesigns or extended development cycles. This drop-in compatibility accelerates time-to-market for next-generation inverter designs while leveraging proven manufacturing and qualification processes. The extended temperature capability can also reduce cooling system requirements. This module is the first one in the HybridPACK Drive family to come with a 1300 V blocking voltage to improve inverter performance, efficiency and robustness beyond battery voltages of 900 V. Infineon will roll out the 205 °C operating capability also across its existing 1200 V SiC module portfolio within the product family. | 29.05.2026 08:30:00 | May | news_2026-06-15_9.jpg | \images\news_2026-06-15_9.jpg | https://www.infineon.com/market-news/2026/infatv202605-103 | infineon.com |
| Simulator for Rapid Power Electronics Circuit Verification | ROHM has released the ROHM PLECS® Simulator on... | 13859 | Product Release | Simulator for Rapid Power Electronics Circuit Verification | ROHM has released the ROHM PLECS® Simulator on its website. This simulation tool enables designers of power electronics circuits and system designers to rapidly simulate the operation of ROHM’s power devices online. The tool is based on the PLECS simulation software. The ROHM PLECS Simulator specializes in loss and thermal calculations. This allows users to simulate power loss and temperature rise in a matter of seconds to minutes by selecting a power electronics circuit topology from a list on the website and choosing from the various power devices offered by ROHM. This reduces the time and effort required for optimal device selection during the early stages of circuit design. Twenty different topologies are already available, and ROHM plans to expand the range of device models and topologies in the future, including SiC devices, IGBTs and power modules. It is possible to perform end-to-end simulation, ranging from design loss and thermal verification to waveform checking. | 28.05.2026 07:30:00 | May | news_2026-06-15_8.jpg | \images\news_2026-06-15_8.jpg | https://www.rohm.com/news-detail?news-title=2026-05-28_news_plecs-simulator&defaultGroupId=false | rohm.com |
| Partnership on Power MOSFET Manufacturing in the US | Polar Semiconductor, LLC and Nexperia B.V. announc... | 13855 | Industry News | Partnership on Power MOSFET Manufacturing in the US | Polar Semiconductor, LLC and Nexperia B.V. announced a strategic collaboration to manufacture next generation power MOSFET devices at Polar Semiconductor’s U.S. based wafer foundry. The partnership supports an expanded power MOSFET portfolio while strengthening supply for customers worldwide. By combining Polar’s expertise in power semiconductor manufacturing and ongoing capacity expansion with Nexperia’s power MOSFET technology, the collaboration addresses rapidly growing demand across AI server infrastructure, robotics, industrial, and automotive applications. Polar Semiconductor, a U.S.-based foundry with fully domestic manufacturing operations, runs a high volume wafer manufacturing facility in Minnesota. Polar is IATF 16949 certified. Under the collaboration, Nexperia is developing a portfolio of next generation power MOSFETs. | 27.05.2026 09:00:00 | May | news_2026-06-15_4.png | \images\news_2026-06-15_4.png | https://www.nexperia.com/about/news-events/press-releases/polar-semiconductor-and-nexperia-partner-on-power-mosfet-manufacturing-to-strengthen-global-supply-stability | nexperia.com |
| Power Meter with up to 4 Channels | Anritsu released the ML2439A Power Meter, which op... | 13867 | Product Release | Power Meter with up to 4 Channels | Anritsu released the ML2439A Power Meter, which operates in the frequency range from 10 MHz to 50 GHz (dependent on USB sensor model). Up to four Anritsu USB power sensors are supported simultaneously, including MA244xxA Peak Power Sensors, MA243xxA CW Sensors, MA242xxA and MA241xxA True RMS Sensors. The cassis measures 3.5 in x 8.3 in x 11.2 in (H x W x D), while the instrument allows for using the measurement modes RMS, Pulse, and Peak concurrently. The power of modulated and CW waveforms are displayed in both graphical and textual formats while a GPIB interface allows for legacy integration; Ethernet connectivity is also available. | 26.05.2026 15:30:00 | May | news_2026-06-15_16.jpg | \images\news_2026-06-15_16.jpg | https://www.anritsu.com/en-gb/test-measurement/news/news-releases/2026/2026-05-26-gb01 | anritsu.com |
| 3.3 kV Power Modules to Enable Solid-State Transformers for AI Data Centers | Microchip Technology presented its 3.3 kV HV‑... | 13858 | Product Release | 3.3 kV Power Modules to Enable Solid-State Transformers for AI Data Centers | Microchip Technology presented its 3.3 kV HV‑D3 mSiC® Power Modules, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centers and other high‑voltage power applications. These modules integrate 3.3 kV silicon carbide (SiC) mSiC MOSFETs and Schottky diodes in an industry‑standard 62 mm package, enabling efficient power delivery from the medium‑voltage grid directly to the server rack. As AI data centers continue to scale, token generation is limited by power availability, while efficiency is a defining factor for return on investment. Microchip’s HV‑D3 mSiC modules are engineered specifically to meet these requirements. The modules use Microchip’s mSiC MOSFET technology, which offers a good R<sub>DS(on)</sub> stability over temperature, with packaging that supports 6 kV isolation, incorporates CTI 600‑rated materials and features extended creepage distances, designed to allow safe series connection for high‑voltage operation. A silicon nitride (Si<sub>3</sub>N<sub>4</sub>) substrate delivers the thermal conductivity and power‑cycling capability needed. The HV‑D3 mSiC power modules are available in half‑bridge and common‑source configurations, with and without anti‑parallel Schottky diodes, addressing applications in the 100-300 A range. While optimized for solid-state transformers in AI data centers, these modules also address applications like megawatt charging infrastructure for heavy‑duty vehicles, auxiliary power supplies for rail/heavy transportation, medium‑voltage motor drives, industrial and defense power systems. | 26.05.2026 06:30:00 | May | news_2026-06-15_7.jpg | \images\news_2026-06-15_7.jpg | https://www.microchip.com/en-us/about/news-releases/products/microchip-launches-3-3-kv-hvd3-msic-power-modules-to-enable-solid-state-transformers | microchip.com |
| Announcing 3D-PEIM 2026 Tutorial and Panel Session | 3D-PEIM 2026, an international symposium dedicated... | 13840 | Event News | Announcing 3D-PEIM 2026 Tutorial and Panel Session | 3D-PEIM 2026, an international symposium dedicated to 3D power electronics packaging and heterogeneous integration, will take place November 16–19, 2026, at Arizona State University in Tempe, Arizona. The symposium will bring together researchers, manufacturers, and industry leaders to discuss emerging technologies and manufacturing approaches shaping the future of advanced power packaging. As part of the 2026 technical program, the Organizing Committee is pleased to announce the addition of four expert-led tutorials and a special panel session to be held on Monday, November 16. The tutorial program will provide attendees with in-depth perspectives on key technical challenges and industry developments across advanced packaging, reliability, materials, and system integration. The 2026 symposium will also feature six plenary speakers, seven technical sessions, poster presentations, industry exhibits, and guided tours of ASU’s MacroTechnology Works facility. Technical focus areas include advanced packaging and 3D integrated modules, thermal management, design and simulation, reliability and failure analysis, passive components, power delivery and energy storage, and materials for advanced packaging. Conference registration will open June 8, 2026. | 25.05.2026 11:00:00 | May | news_2026-06-01_5.jpg | \images\news_2026-06-01_5.jpg | https://www.3d-peim.org/ | 3d-peim.org |
| APEC 2027: Call for Technical Sessions Digest Submissions | APEC 2027, to be held in New Orleans, Louisiana/US... | 13835 | Event News | APEC 2027: Call for Technical Sessions Digest Submissions | APEC 2027, to be held in New Orleans, Louisiana/USA, from March 7-11, 2027, is now accepting digest submissions for the Technical Sessions. Interested authors wishing to present a Technical Session paper must submit a digest for consideration by August 14, 2026. Instructions for submissions are available at: https://apec-conf.org/speakers/ts-author-info/. To facilitate higher-quality digest and final manuscript submissions, APEC 2027 offers significantly expanded submission windows for both. Topics of interest are divided into fourteen tracks, each with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Transportation Power Electronics, Wireless Power Transfer, Power Electronics Applications. The Technical Sessions digest should explain the problem the paper addresses, its major results, and how it differs from the closest existing literature. Technical Session papers presented at APEC must be original material and not have been previously presented or published. The principal criterion used by reviewers in selecting digests for the program will be the usefulness of the work to the practicing power electronics professional. They also value evidence of completed experimental work. Authors will be notified of the decision of paper acceptance on October 12, 2026. Accepted papers final manuscript must be submitted and author registration completed by December 7, 2026. | 21.05.2026 06:00:00 | May | news_2026-06-01_1.png | \images\news_2026-06-01_1.png | https://apec-conf.org/speakers/ts-author-info/ | apec-conf.org |
| Isolators for Galvanic Isolation of Digital Signals | Würth Elektronik is expanding its range of digital... | 13845 | Product Release | Isolators for Galvanic Isolation of Digital Signals | Würth Elektronik is expanding its range of digital isolators (WPME-CDIS & WPME-CDIP) with 2-channel bidirectional isolators for I2C communication interfaces. WPME-CDI2C enables bidirectional data transmission at up to 2 MHz, making the isolator suitable for most I2C communication applications. The SOIC-8NB package is pin-compatible with common standard I<sub>2</sub>C isolators on the market. The WPME-CDI2C isolator – designed for bidirectional I<sub>2</sub>C interface applications with data rates of up to 2 MHz – offers an isolation voltage of up to 3750 V<sub>RMS</sub> in accordance with UL 1577 and a basic insulation rating in accordance with IEC 60747-17 (VDE 0884-17). It offers high immunity to system noise, with a common-mode transient immunity (CMTI) of ±150 kV/μs. The device is available from stock in two variants: One features a bidirectional serial data line (SDA) and a bidirectional serial clock line (SCL). The other features a bidirectional serial data line (SDA) and a unidirectional serial clock line (SCL). | 20.05.2026 09:30:00 | May | news_2026-06-01_11.jpg | \images\news_2026-06-01_11.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=WPME-CDI2C | we-online.com |
| EU flagship Project Moore4Power to drive the next Generation of sustainable Power Electronics | Europe’s has launched an ambitious semiconductor R... | 13838 | Industry News | EU flagship Project Moore4Power to drive the next Generation of sustainable Power Electronics | Europe’s has launched an ambitious semiconductor R&D project involving 62 partners: Moore4Power (More than Moore for Disruptive Innovations in Power Electronics). Led by Infineon Technologies this chips joint undertaking initiative unites large entities, small and medium-sized enterprises and research institutes from 15 European countries to develop the next generation of smart, efficient and sustainable power electronics. With a total project volume of € 91 million, Moore4Power will run for three years aiming to deliver breakthrough innovations that strengthen Europe’s technological sovereignty and sustainability in the field of power electronics. For decades, progress in electronics followed Moore’s Law: smaller transistors, delivering higher performance at lower cost. Today, traditional scaling is reaching physical and economic limits. Moore4Power addresses this challenge by shifting the focus from individual components to system-level innovation. Combining technologies, materials, and functions in smarter, application-driven ways, the initiative unlocks major gains in efficiency, reliability and power density. At the core of Moore4Power is heterogeneous integration, which combines different semiconductor technologies such as silicon (Si), silicon carbide (SiC) and gallium nitride (GaN), together with sensing, control and communication functions to form tightly integrated systems. Each technology is used exactly where it performs best, enabling higher efficiency, improved reliability and more compact designs. Power chiplet technology enables scalable architectures and more flexible product variants at globally competitive cost levels. Moore4Power focuses on high-impact sectors where power conversion drives cost, CO<sub>2</sub> reduction and reliability. One central achievement is the Digital Product Passport (DPP), embedded directly into power modules via wireless access. The DPP will provide lifecycle data such as operating conditions, state of health and remaining lifetime throughout the product’s use. | 20.05.2026 09:00:00 | May | news_2026-06-01_4.jpg | \images\news_2026-06-01_4.jpg | https://www.infineon.com/press-release/2026/infxx202605-089 | infineon.com |
| Liquid-Cooled 3-Phase AC/DC Converters for High-Power Industrial Applications | Bel Fuse launched its TLP5000 Series of liquid-coo... | 13844 | Product Release | Liquid-Cooled 3-Phase AC/DC Converters for High-Power Industrial Applications | Bel Fuse launched its TLP5000 Series of liquid-cooled, high-power 3-phase AC/DC converters designed to meet the growing demands of industrial systems operating in extreme conditions. Built for applications such as high-power laser cutting, winding machines, and spinning mills, the platform delivers the reliability and robustness engineers need in demanding environments. While traditional power supplies use forced-air cooling, the rugged AC/DC converter integrates a liquid cooling system with a built-in cooling plate, which eliminates the need for fans and significantly improves reliability, thermal efficiency, and product lifespan. The TLP5000 Series can operate effectively in polluted environments, making it feasible for defense, industrial automation, and other harsh-condition deployments. The converter’s adjustable output voltage provides added design flexibility, allowing engineers to implement it across a wide range of high-power use cases and withstand continuous high-performance for a long lifetime. The TLP5000 Series also supports parallel operation with active current sharing, enabling scalable configurations up to 60 kW. To support modern industrial architectures, the series includes CAN bus communication for real-time monitoring, control, and diagnostics. Hot-plug connectors further enhance system uptime by allowing maintenance or replacement without requiring a full system shutdown, which is essential for automated environments and smart infrastructure where continuous operation is critical. | 20.05.2026 08:30:00 | May | news_2026-06-01_10.jpg | \images\news_2026-06-01_10.jpg | https://www.belfuse.com/resources/news/bel-launches-tlp5000-series-liquid-cooled-3-phase-ac-dc-converters-for-high-power-industrial-applications | belfuse.com |